SST39WF Search Results

39WF800A

Abstract: SST39WF800A SST39WF800B
Contextual Info: 8 Mbit x16 Multi-Purpose Flash SST39WF800B Data Sheet FEATURES: • Organized as 512K x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention

EN39SL160

Abstract: EN39SL160H SST39WF1601 SST39WF1602 WFBGA
Contextual Info: Eon Silicon Solution Inc. Application Note Eon Flash EN39SL160L H vs SST Flash SST39WF1601(02) This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 2005 Eon Silicon Solution Inc. Rev. B, Issue Date: 2009/10/15

SST39WF400A

Abstract: sst39wf400a-90-4i-zke
Contextual Info: 4 Mbit x16 Multi-Purpose Flash SST39WF400A SST39WF400A1.8V 4Mb (x16) MPF memory EOL Data Sheet FEATURES: • Organized as 256K x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 cycles (typical)

39WF800A

Abstract: SST39WF800A
Contextual Info: 8 Mbit x16 Multi-Purpose Flash SST39WF800A SST39WF800A1.8V 8Mb (x16) MPF memory EOL Data Sheet FEATURES: • Organized as 512K x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (typical)

a103 636 transistor

Abstract: SST39WF1601 SST39WF1602 SST39WF1601-70-4C-MBQE SST39WF1602-70-4I-Y1QE SST39WF1601-90-4I-B3KE
Contextual Info: 16 Mbit x16 Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 SST39WF160x2.7V 16Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 1M x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (Typical)

Contextual Info: 4 Mbit x16 Multi-Purpose Flash SST39WF400A SST39WF400A3.0 & 2.7V 4Mb (x16) MPF memory Data Sheet FEATURES: • Organized as 256K x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (typical)

MO-222

Abstract: 39WF800A SST39WF800A SST39WF800B
Contextual Info: 8 Mbit x16 Multi-Purpose Flash SST39WF800B Data Sheet FEATURES: • Organized as 512K x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention

SST39WF800A

Abstract: 39WF800A
Contextual Info: 8 Mbit x16 Multi-Purpose Flash SST39WF800A SST39WF800A1.8V 8Mb (x16) MPF memory Data Sheet FEATURES: • Organized as 512K x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention

s71370

Abstract: SST39WF400B
Contextual Info: 4 Mbit x16 Multi-Purpose Flash SST39WF400B EOL Data Sheet T ISFEATURES: • Organized as 256K x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention

SST39WF160x

Abstract: AM29F SST25VF016B tsop i 12mmx20mm 48-WFBGA SST38VF640x TSOP 28 SPI memory Package flash FLASH CROSS sst39vf040 WFBGA-48 48TSOP
Contextual Info: Silicon Storage Technology, Inc. NOR Flash Cross Reference Guide 1.8V, 3V, 5V www.SST.com Comparison Guide Spansion Company Density Spansion SST SST AM29F SST39SF S29AL S29GL SST39VF SST38VF S29AS SST39WF 1 ~ 32 Mb 2 ~ 16 Mb 1 ~ 4 Mb 4 ~ 32 Mb 16 Mb ~ 1Gb

DS25031

Abstract: SST39WF800B DS2503 39WF800A microchip 1344 MO-207 ball size DS25031A
Contextual Info: 8 Mbit x16 Multi-Purpose Flash SST39WF800B A Microchip Technology Company Data Sheet The SST39WF800B is a 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with proprietary, high-performance CMOS SuperFlash technology. The splitgate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared to alternate approaches. The SST39WF800B writes (Program or Erase) with a 1.65-1.95V power supply. This device conforms to JEDEC

39WF400A-ZKE-P1

Abstract: SST39WF400A 39WF400A
Contextual Info: 4 Mbit x16 Multi-Purpose Flash SST39WF400A SST39WF400A1.8V 4Mb (x16) MPF memory Data Sheet FEATURES: • Organized as 256K x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 cycles (typical) – Greater than 100 years data retention

SST39WF1601

Abstract: SST39WF1602 SST39WF160x SST39WF1601-70-4I-B3KE SST39WF1601-70-4IB3KE BF274
Contextual Info: 16 Mbit x16 Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 SST39WF160x2.7V 16Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 1M x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (Typical)

SST39WF1601

Abstract: SST39WF1602 BF274
Contextual Info: 16 Mbit x16 Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 A Microchip Technology Company Data Sheet The SST39WF1601 / SST39WF1602 are a 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) devices manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate

Contextual Info: 4 Mbit x16 Multi-Purpose Flash SST39WF400A SST39WF400A3.0 & 2.7V 4Mb (x16) MPF memory Data Sheet FEATURES: • Organized as 256K x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (typical)

Contextual Info: 16 Mbit x16 Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 SST39WF160x2.7V 16Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 1M x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (Typical)

Contextual Info: 8 Mbit x16 Multi-Purpose Flash SST39WF800A SST39WF800A1.8V 8Mb (x16) MPF memory Data Sheet FEATURES: • Organized as 512K x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention

EN39SL800-70BIP

Abstract: EN39SL800 EN39SL800-70NI 555H SST39WF800B WFBGA
Contextual Info: Eon Silicon Solution Inc. Application Note Eon Flash EN39SL800 vs SST Flash SST39WF800B This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2009/07/08

SUNNY

Abstract: SST39WF800A SST39WF800A-90-4C-C2QE
Contextual Info: Eon Silicon Solution Inc. Specification Comparison 8Mb FLASH EN29SL800B Part No. : VS SST39WF800A EN29SL800B-90KIP Issued date : 2007 / 04 / 24 Prepared by : FAE Engineer：Sunny Tai Approval by : FAE Manager : Jason Tseng TEL : +886-3-5525686-280 , E-mail : sunnytai@essi.com.tw

SST39WF400A

Contextual Info: 4 Mbit x16 Multi-Purpose Flash SST39WF400A SST39WF4003.0 & 2.7V 4Mb (x16) MPF memories Preliminary Specifications FEATURES: • Organized as 256K x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (typical)

SST39WF400A

Abstract: WFBGA
Contextual Info: 4 Mbit x16 Multi-Purpose Flash SST39WF400A SST39WF400A1.8V 4Mb (x16) MPF memory Data Sheet FEATURES: • Organized as 256K x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention

Contextual Info: 8 Mbit x16 Multi-Purpose Flash SST39WF800A SST39WF800A1.8V 8Mb (x16) MPF memory Data Sheet FEATURES: • Organized as 512K x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention

Contextual Info: 8 Mbit x16 Multi-Purpose Flash SST39WF800A SST39WF800A1.8V 8Mb (x16) MPF memory Data Sheet FEATURES: • Organized as 512K x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention

XX98

Abstract: SST39WF800A
Contextual Info: 8 Mbit x16 Multi-Purpose Flash SST39WF800A SST39WF800A1.8V 8Mb (x16) MPF memory Data Sheet FEATURES: • Organized as 512K x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention