New Jersey Semiconductor
Contextual Info: Js.ii.EUu <^£.mi-L.onaactoi I/-TOaucti,LJna. C/ TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistors D45C6 DESCRIPTION • Low Saturation Voltage • Good Linearity of hFE
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d45c6d44c6o-220c-50ma+3-100ma-20manew jersey semiconductor
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tip420
Abstract: BU522B tip420 transistor BD243 TIP41/TIP42 BD535 transistors d44c8 D44C6 B0243C BD53
Contextual Info: POWER TRANSISTORS — BIPOLAR PLASTIC continued TO-220AB Package (continued) R esistive Switching lcCont V c E O (sus) Amps Max Volts Min 4 45 Device Type NPN D44C6 D45C6 2N6124 BD534 2N6121 BD533 60 PNP BD535 2N6122 D44C7 BD536 2N6125 D45C7 D44C8 D45C8
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o-220abd44c62n6121bd533+14d45c62n6124bd534bd5352n6122d44c7tip420bu522btip420 transistorbd243tip41/tip42transistors d44c8b0243cbd53
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5P 5P
Contextual Info: NATL SEMICOND D IS C R E T E 1 1 E 5 | =501130 0 0 3 7 1 A S T I This Material Copyrighted By Its Respective Manufacturer 1 5 10* 55 10 25 TO-220 (37 45 5 10’ 55 20 40 D45C6 TO-220 (37) 45 5 10* 55 D45C7 60 5 10* Its TO-220 (37) D45C8 TO-220 (37) 60 5
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bsq1130t-33-015p 5p |
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B0415
Abstract: BD416 BD417 BD415 d44c3 b0416 b0636 BD303 B0536 BD239
Contextual Info: Power Transistors MAXIMUM RATINGS VCEO IC Pd mW (V) (A) H FE POLA RITY CASE BD239 BD239A BD239B BD240 BD240A BD240B N N N P P P TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 30 30 30 30 30 30 2 2 2 2 2 2 45 60 80 45 60 80 15 15 15 15 15 15 BD241 BD241A BD241B
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bd239o-220bd240bd239a+12bd240abd239bbd240bb0415bd416bd417bd415d44c3b0416b0636bd303b0536
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D44C4
Abstract: D45C4 D44C6 D44C5
Contextual Info: Power Transistors MAXIMUM RATINGS TYPE NO. POLA RITY CASE BD239 BD239A BD239B BD240 BD240A N N N P P BD240B BD241 BD241A BD241B BD242 H te VcEOoi Ic V Ceo W) (A) (V) TO-220 TO-220 TO-220 TO-220 TO-220 30 30 30 30 30 2 2 2 2 2 45 60 80 45 60 15 15 15 15
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bd239bd239abd239bbd240+10bd240abd240bbd241bd241abd241bbd242d44c4d45c4d44c6d44c5
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D45C5
Abstract: D45C11 D45C2 D45C6 D45C1 D45C9 D45C4 d45c6 transistor D45C3 D45c3 TRANSISTOR
Contextual Info: Silicon Power Pac ELECTRONIC INACTIO N- smmomm Transistors “ Color Molded” The General Electric D45C is a green, silicone plastic encapsulated, power transistor designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operating at frequencies
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o-220d45c5d45c11d45c2+7d45c6d45c1d45c9d45c4d45c6 transistord45c3d45c3 transistor
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d45c6 transistor
Abstract: GE D45C2 d44c3 GE D45C5 transistor D45C5 D45C2 ge d45c8 D45C9 D45C4 08/bup 3110 transistor
Contextual Info: SILICON POWER TRANSISTORS 229 COMPLEMENTARY - 4 AMPERES GE Type NPN PNP D44C1 - - D45C1 D 44C 2 Pt T c = 25°C Max. W 311.0 30.0 V CEO Min. (V ) 30 - 30 h FE! 200 m A •c Cont. (A) @ IV, ¿.0 25 - 25 _ -¿.0 M in. M ax. hFE @ 1 V , 1A 30 4 .0 40 120 71)
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200mad44c1d45c1d44c2+13d45c2d44c3d45c3d44c4d45c4d44c5d45c6 transistorge d45c2ge d45c5 transistord45c5ge d45c8d45c908/bup 3110 transistor
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d44c3
Abstract: GE D44C9 D44C6 D44C5 D45C4 e 229 IC-229 D44C1 D44C2 D44C4
Contextual Info: SILICON POWER TRANSISTORS 229 COMPLEMENTARY - 4 AMPERES G E Type N PN PN P D44C1 - - D45C1 D44C3 - 311.0 30.0 V C EO Min. V 30 - 30 •c Cont. (A ) @ IV , ¿.0 -¿.0 Min. h FE! 200mA hF E @ 1V, 1A Max. Min. 25 - 10 25 _ 30 4.0 40 120 71) D45C2 30.0 -30
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200mad44c1d45c1d44c2+10d45c2d44c3d45c3d44c4d45c4d44c5ge d44c9d44c6e 229ic-229
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bd 241a transistor
Abstract: BD535 TRANSISTOR bd 108 transistor BD 240 BD417 BD633 d44c3 bd 8h TO-220B 45C11
Contextual Info: _6 0 9 178B MICRO ELECTRONICS C O R P _ 82D 00667 D 'T niCRO ELE CT RO NI CS CORP ÛE d Ê I b D T I ? flfl □□□0t=it=i7 3 | Of Power Iransistors P O L A R IT Y V CE SAT CASE I M A X IM U M R A T IN G S 'c (A) BD BD BD BD BD 239 239A
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t0-220bo-220b-220bto-02+11melf-002bd 241a transistorbd535transistor bd 108transistor bd 240bd417bd633d44c3bd 8hto-220b45c11
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044H8
Abstract: D44C5 D43C8 D44C6
Contextual Info: , THOflSON/ D I S T R I B U T O R SflE D TCSK Bipolar Power Transistors General Purpose Continued v C E <sat)-V h FE T y p e N o. v CEO<s u s > v C E S (s u s ) V V Pt D 4 3 C FAM L Y ( p - n - p ) D43C1 D43C 2 D43C 3 D43C 4 D43C 5 D43C 6 D43C 7 D 43C 8
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d43c1d43c2d43c3d43c4+9d43c5d43c6o-202d43c7d43c8d43c9044h8d44c5d44c6
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45C8
Abstract: n5880 TIP 2n3055 BD221 d44c3 PNP 2SD triac 206 N6306 2N648B BD224
Contextual Info: Power Transistors • D EV IC E ■c Max v CEO Max PO LA RITY A V - hFE M in/M ax ff \ç v CE(sat Max Cd \q A V A »T Min pD(Max) T C =25°C MHz W PACK AGE 0.8 15 15 25 117 115 10 10 TO-66 TO-3 TO-3 TO-39 TO-39 5.0 5.0 5.0 5.0 1.0 4.0 4.0 4.0
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2n30542n30552n3055sd2n3439+162n34402n37132n37142n37152n37162n374045c8n5880tip 2n3055bd221d44c3pnp 2sdtriac 206n63062n648bbd224
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PNP 2SD
Abstract: T1P61 2N3055 2N3055SD 2N3054 2N3439 2N3440 2N3713 BD224 2N3715
Contextual Info: 1 SEMICONDUCTORS INC OTE D | fi!3bbSG 0D0DSÖ2 4 | Power Transistors •c D E V IC E Max v CEO M ax A v hFE M in / M a x <$ lç P O L A R IT Y Powered by ICminer.com A v CE sat M a x fti Iq V A »T M in p D (M a x) T C =25°C MHi W PACK AGE 2N 3054 2N 3055
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2n30542n30552n3055sd2n3439+92n34402n37132n37142n37152n37162n3740pnp 2sdt1p61bd224
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D44C5
Abstract: ge d45c8 GE D44C9 D44C6 D44C3 TL3019 D44* general electric npn to-220 D44C4 d44c9 D44* npn
Contextual Info: S IL IC O N POWER T R A N S IS T O R S COMPLEMENTARY - 4 AMPERES G E Type NPN PNP D44C1 - - D44C3 311.0 V CEO Min. V 30 •c Cont. (A) @ IV , ¿.0 Min. h FE! 200mA hF E @ 1V, 1A Max. Min. 25 - 10 10 30.0 - 30 -¿.0 25 _ 30.0 30 4.0 40 120 71) D45C2 30.0
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200mad44c1d45c1d44c2+13d45c2d44c3d45c3d44c4d45c4d44c5ge d45c8ge d44c9d44c6tl3019d44* general electric npn to-220d44c9d44* npn
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JE230
Abstract: JE370
Contextual Info: NATL SEI1IC0ND {DISCRETE} NATL SEMICOND, DE tSDllBD □□3S4bO 7 28C 3 5 4 6 0 (D ISCRETE 7 p g; o< « HI -s U< IU JCs : in to »-‘ do in in in in »- • r-' O T-’ o O in in in in *- I Wo t-* o o o in o in r i *-* CV T-’ 03 > i S-« r- ff> c*j O
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2n51932n51942n51952n6107+82n61092n6110o-126oe252mje253mje254je230je370
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MJ3001 equivalent
Abstract: MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ2955 See 2N3055 MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applications. MJ2501* • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc
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mj29552n3055mj2955a2n3055a+15mj2500mj2501mj3000mj3001tip73btip74mj3001 equivalentmj3000 equivalent2sc1096 equivalentbu108mj3000 circuitmj2955 2n3055 200 watts amplifierbdx54mj2955 replacement2n3055 replacement
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motorola MJ15001
Abstract: BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Transistors NPN MJ15001 PNP MJ15002 The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —
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mj15001mj15002tip73btip74+13tip74atip74btip75tip75amotorola mj15001bu108equivalent to tip162bdx54d45h11 equivalent replacement2sd217bu326bu100replacement bd139
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TIP142 TRANSISTOR REPLACEMENT
Abstract: replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V
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tip140tip145tip141tip146+16tip142tip147tip73btip74tip74atip74btip142 transistor replacementreplacement for tip147high end amplifier schematics 2n3055pin configuration npn transistor tip41cbdw51c schematicstip142 tip147bd262 darlington2n6022bu108transistor tip142
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2SC105
Abstract: 2sd718 amplifier 2N4923 MOTOROLA bd139 equivalent transistor 2SA1046 2SC1629 equivalent bd139 Complement ST BDW83C 2SC108 BU326A equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4921 thru 2N4923* Medium-Power Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE sat = 0.6 Vdc (Max) @ IC = 1.0 Amp
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2n49182n49192n49202n4921+162n4923tip73btip74tip74atip74btip752sc1052sd718 amplifier2n4923 motorolabd139 equivalent transistor2sa10462sc1629 equivalentbd139 complementst bdw83c2sc108bu326a equivalent
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All similar transistor 2sa715
Abstract: 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD243B BD243C* PNP BD244B BD244C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE sat = 1.5 Vdc (Max) @ IC = 6.0 Adc
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bd243bbd244bbd243cbd244c+10tip73btip74all similar transistor 2sa7152n3055bu108transistor bc 1532sa1046bu326bu100transistor cross reference
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BU108
Abstract: 2SC1629 equivalent BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:
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bux41tip73btip74tip74a+11tip74btip75tip75atip75btip75c2n6488bu1082sc1629 equivalentbdx54bu326bu100
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2SA1046
Abstract: 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.
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bux85tip73btip74tip74a+11tip74btip75tip75atip75btip75c2sa1046380 darlington to3 ibmreplacement bd139bu326bu108bu100
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mje15033 replacement
Abstract: BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150 – 200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.
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mje341mje344tip73btip74+13tip74atip74btip75tip75atip75bmje15033 replacementbu108tip41bmje2482x 0602 ma2sc1419bu326bu100
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BU108
Abstract: TIP105 Darlington transistor BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS . . . useful for general–purpose, high voltage applications requiring high fT. • Collector–Emitter Sustaining Voltage —
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mje2361tmje2360ttip73btip74+10tip74atip74btip75tip75atip75bbu108tip105 darlington transistorbdx54bu326bu100
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MJ15023 EQUIVALENT
Abstract: MJ15024 MJ15025 BU108 2SC1943 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ15023 MJ15025 * Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *Motorola Preferred Device • High Safe Operating Area 100% Tested —
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mj15023mj15025tip73btip74+11tip74atip74btip75tip75amj15023 equivalentmj15024 mj15025bu1082sc19432sc1419bu326bu100
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