D2S DIODE Search Results

d2s diode

Abstract: d2s 28 diode D2S-5D diode d2s D2S-01
Contextual Info: Subminiature Basic Switch D2S Subminiature Switch with Superb Flux Resistance One-piece terminal construction to keep out flux. High operating-position accuracy ±0.25 mm enables easy peripheral design and positioning. Use of pin plunger also allows horizontal operation.

DIODE D3S 90

Abstract: BC 247 sot-23 d2s diode DIODE d3s TRAY DIMENSIONS SOIC16 tape & reel d3s diode
Contextual Info: Discrete Surface Mount Prefixes Suffixes Pkg dim D-PAK TO-252-2L RHRD RURD S S D2S Dim D-PAK (TO-252-3L) IRFR RFD RLD FDD MOSFET Bipolar Diode JFETs IGBT Pkg method Qty (pcs) Reel dia Tape width (inch) (mm) Tape & Reel 2.5K 13 16 X Tape & Reel 2.5K 13 16

D3S 50

Abstract: OA61 AEG Diode
Contextual Info: A E G CORP 17E D 005145b 000*1335 3 Kleindioden Lower power diodes Diodes de faible puissance Typ Type V rrm V D 1,5/ A IS A /°C 400 800 50 100 400 200 800 55 200 600 400 160 800 150 800 1000 110 1200 ¡50 D3/ D6/ trr 200 600 1000 D2S D3S •favm Ifsm t=>10m* tal

43DSS71

Abstract: 1N4245 1N4246 1N4247 1N4248 1N4249
Contextual Info: HA RR IS S E n i C O N D S E CT OR i l i H u s e m i c o n d u c t o r ; a r r is bflE D • 43 D2S 71 □ G S G 2 S ti DTT ■ HAS 1N4245, 1N4246, 1N4247 1N4248, 1N4249 1Ag200V ■ 1000V DlOdSS December 1993 Package Features JEDEC STYLE D0-204 TOP VIEW • Hlgh-Temperature Metallurgically Bonded, No Com­

D2S 56

Abstract: OA61 S1600 sj51
Contextual Info: A E G- AK TI ENGE S EL L S C H A F T 17E » 002^15 GGDTBBS 7 M A E Û G Kleindioden Lower power diodes Diodes de faible puissance Typ Type V rrm If a v m •f s m trr tvjmax Maßbild G t=10mt tal te V A/°C A US °C g 200 600 1000 400 800 50 1.5 /100 - 175

AX078

Abstract: MARKING JM 251C 25T160 d2s4m D2S4 122T
Contextual Info: Schottky Barrier Diode Axial Diode OUTLINE D2S4M Unit : mm Package I AX078 W eight 0.38g Typ 40V 2A CD = E Feature • Tj=15CfC • T j= 1 5 0 °C • P rrsm P K ^ V î/x (S ü E • P rrsm 27.5 Rating 27.5 I Main Use M * iS M iK im M arking • Switching Regulator

Contextual Info: Schottky Barrier Diode Axial Diode mtm D2S4M OUTLINE Unit: mm Weight 0.38g Typ Package I AX078 30 40V 2A 8 3. Feature • PRRSM^y^ VÍ/X<SÍ¡E • D C /D C 3 • * Œ .y -A .O A * itg * <R0 H (D * Main Use • • • • • 7 27.5 5 27.5 • Tj=150°C

TO-264-aa

Contextual Info: HiPerFET Power MOSFETs IXFK90N20Q IXFK90N20QS Q C lass ID25 = 200 V = 90 A R = D SS DS on Sym bol Test Conditions Maxim um Ratings V OSS Tj = 25°C to 150°C 200 V VDGR Tj = 25°C to 150°C; R GS = 1 MQ 200 V Vos V GSM Continuous ±20 V Transient ±30

d2s diode

Abstract: D2S DIODE schottky d2s schottky d2s6m diode d2s 251C AX078
Contextual Info: Schottky Barrier Diode Axial Diode OUTLINE Package I AX078 D2S6M 60V 2A i Feature • Tj=15CfC • Tj=150°C • P r r s m P K ^ V î/ x S ü E • P rrsm 27.5 • DC/D c u y jt— ? • WM.f-hs O A tlfg • jS S .J K 27.5 I 5 I Rating Pi <»4.o •2:

Contextual Info: HM Th r 1 i ^ [T=n January 7, 1998 RECTIFIER’ 1kV’ 2-7A’ 150ns TEL:805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED FAST RECTIFIER DIODE • 3PFR0 QUICK REFERENCE DATA V r = 1000V = 2.7A • If • trr = 150nS

d2s diode

Abstract: IXTH50N20
Contextual Info: aixYS MegaMOS FET IXTH/IXTM 50N20 VDSS lD25 = 200 V = 50 A ^D S on = ^ N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions VDSS T j =25°C to150°C 200 V V oor T J = 25° C to 150° C; RQS= 1 Mi2 200 V Vos vt g s m Continuous +20 V Transient

d2s diode

Abstract: d2s 28 diode BU2507DX
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2507DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television

25t65

Abstract: marking code riy
Contextual Info: Schottky Barrier Diode Axial Diode Wtm D2S6M P a cka g e OUTLINE U n it-m m : A X 0 7 8 W e ig h t 0 .3 8 g T y p 60V 2A Feature • Tj=150°C • Tj=150°C • P rrs m T ’A ' ^ V ì ' I ' K ì E • P rrsm Rating (!> Main Use —M— M a rk in g • DC/DC Converter

d2s diode

Abstract: D2S DIODE schottky
Contextual Info: Schottky Barrier Diode Axial Diode W tm D2S4M OUTLINE Package : A X 40V 2A 078 Unit-mm Weight 0.38g Typ (D Feature • Tj=150°C • P rrs m T ’A ' ^ V ì ' I ' K ì E • Tj=150°C • P r r s m Rating • D C /D C nyjt-l? • mm.cf-A.oAm • • •

BUK638-500B

Contextual Info: N AMER PHILIPS/DISCRETE bTE I> • bbS3T31 0030675 Philips semiconductors PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. REDFET with fast recovery reverse diode, particularly suitable

Contextual Info: LF2246 11 x 10-bit Image Filter DESCRIPTION FEATURES □ 40 MHz Data and Coefficient Input and Computation Rate □ Four 11 x 10-bit Multipliers with Individual Data and Coefficient Inputs and a 25-bit Accumulator □ User-Selectable Fractional or Integer Two's Complement Data

nf 931 diode

Contextual Info: OIXYS HiPerFET MOSFET Module VMO 650-01 F VDSS = 100 V = 690 A D25 RDS on = 1.8 mQ N-Channel Enhancement Mode G J P relim in ary Data é KS Symbol v „ ss Test Conditions Maximum Ratings Tj = 2 5 °C tO l5 0 °C 100 V Tj = 25°C to 150°C; RGS = 10 k£2

Transistor C1173

Abstract: L1210 tyco resolver C1173 transistor transistor c929 Transistor C1173 1A Tx C1173 transistor 6ED100HP1-FA C1211 transistor C1161
Contextual Info: HybridPACK Hybrid Kit for HybridPACK™1 Evaluation Kit for Applications with HybridPACK™1 Module Application Note V2.3, 2010-10-15 System Engineering Edition 2010-10-15 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG

C246

Abstract: IXTK33N50 C-246
Contextual Info: g ix Y s High Current MegaMOS FET IXTK33N50 V DSS D cont p DS(on) = 500 V = 33 A = 0.17 £2 N-Channel Enhancement Mode Preliminary data Symbol Test conditions vDSS Tj = 25°C to 150°C Tj = 25°C to 150°C; RGS= 1.0 Vos v QSM Maximum ratings M £i Continuous

nf 931 diode

Abstract: st c316
Contextual Info: VMO 380-02 F v D S S MegaMOS FET Module ^D25 P DS on = 200 V = 390 A = 4.6 mQ N-Channel Enhancement Mode Preliminary data Sym bol Test Conditions Maximum Ratings V OSS Tj = 2 5 °C to 1 5 0 °C 200 V V OGR Tj = 25°C to 150°C; RGS = 10 kS2 200 V V os Continuous

Contextual Info: Dual Power M O SFET Module VM K 90-02T2 VD S S D 25 45 Common-Source connected N-Channel Enhancement Mode 1 2 3 67 Symbol Test Conditions Maximum Ratings Voss T J = 25°C to 150°C 200 V V» T j = 25°C to 150°C; R GS = 6.8 k n 200 V V« Continuous ±20 V

Contextual Info: Advanced Technical Information HiPerFET Power M OSFETs Single Die M OSFET IXFN 280N07 VDSS ^D25 D DS on 'r r N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Tj = 25°Cto150°C 70 V T,J = 25 °C to 15 0 °C ;’ R~. = 1 M fl öS 70

IXTN79N20

Contextual Info: IXTN79N20 VDSS MegaMOS FET D25 RDS on = 200 V = 85 A = 25 mil N-Channel Enhancement Mode Sym bol V ¥ dss Test C onditions Maximum Ratings Tj = 25°C to150°C 200 V Tj = 25°C to 150°C; RGS = 10 k£S 200 V Vas Continuous ±20 V Vas« T ransient ±30 V

Contextual Info: IXYS AdvancedTechnical Information HiPerFET Power MOSFETs IXFX 90N30 IXFK 90N30 V A V„ss = 300 >« = 90 ^D S on “ Single MOSFET Die ^ m fl trr <250 ns 09 Symbol Test C onditions V oss Tj =25°Cto150°C T, =25°C to150°C ; RGS= 1 Mi2 300 300 V V Continuous