D02B Search Results

IA35

Abstract: CDM62256
Contextual Info: HA RR IS S E M I C O N D S E C T O R m 3 7 ^ ] M 3 0 5 27 1 D02b2S3 T BiHAS High-Reliability CMOS LSI — CDM 62256C/3 Advance Information - Wl High-Reliability CMOS 32,768-Word By 8-Bit LSI Static RAM

Contextual Info: bbS3R31 D02b4SA ADS LRE D N AMER PHILIPS/DISCRETE IAPX B Y 228 Jl PARALLEL EFFICIENCY DIODE Double-diffused passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as efficiency diode in transistorized horizontal deflection circuits of television

Contextual Info: N AHER PHILIPS/DISCRETE bTE I> • bb53T31 D02bb00 flSO « A P X Philips specification BYD71 series Epitaxial avalanche diodes DESCRIPTION Rectifier diodes in hermetically sealed axial-leaded ID implosion

Contextual Info: N AflER PHILIPS/D ISCR ETE b'lE D • APX bbSBSBl D02blbS 2T2 BA423L SILICON AM BAND SWITCHING DIODE FOR SURFACE MOUNTING The BA423L is a switching diode intended for band switching in AM radio receivers. This SM diode is a leadless diode in a hermetically sealed SOD-80 envelope with lead/tin plated metal

MIL-D-87157

Abstract: MSD2010 MSD2011 MSD2012 MIL-STD-750 2072 Appnote44 MIL-STD-883-method 2016
Contextual Info: SIEMENS AKTIENGESELLSCHAF S IE M E N S 47E D fl23SbGS D02b'ltlfl 3 SIEG MSD2010TXV/TXVB YELLOW MSD2011TXV/TXVB h ig h e ff . r e d MSD2012TXV/TXVB HIGH EFF. GREEN MSD2013TXV/TXVB red .150" 4-Character 5x7 Dot Matrix Serial Input Alphanumeric Military Display

glass diode yellow band

Abstract: bb809 yellow band glass diode DIODE WITH SOD CASE diode Cathode indicated by yellow band
Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE D m L L S 3^31 D02b 4E 4 42S BB809 SILICON PLANAR VARIABLE CAPACITANCE DIODE The BB809 is a variable capacitance diode in a miniature glass envelope intended for electronic tuning in v.h.f. television tuners with extended band I FCC and OIRT-norm .

Contextual Info: N E C ELECTRONICS INC 3QE 0 b 427525 D02b2flb 7 • jjPD7832x Advanced 8/16-Bit, Real Time Control Microcomputer With A/D Converter NEC NEC Electronics Inc. ■ _ T - f r i - n - we Description TTie juPD7832x 78320,78322 is a single-chip microcom­

Contextual Info: N AUER PHILIPS/DISCRETE L IE bbS3^31 D02b230 ‘IbM D APX BAS45L A LOW LEAKAGE DIODE FOR SURFACE MOUNTING The B A S 4 5 L is a switching diode with a very low reverse current. This S M diode is a leadless diode in a hermetically sealed SO D -8 0 envelope with lead/tin-plated metal

Contextual Info: HARRIS S E MI C O N D SECTOR 37E J> m - 4302271 D02b24b 5 HHAS High-Reliabilily CMOS LSI Devices CDM6264BC/3 Advance Information Hlgh-Rellability CMOS 8192-Word By 8-Blt LSI Static RAM

CDP6805-Series

Abstract: 5332C
Contextual Info: HARRIS SEMICOND SECTOR 37 E D • 430S271 D02bSlS 2 «HAS High-Reiiability CMOS LSI Devices- - CDM 5332C/3 -l S Advance Information High-Reliability CMOS 4096-Word By 8-Bit LSI Static Read-Only Memory

ic 4518

Abstract: pin diagram of ic 4518
Contextual Info: 37E M3G2S71 D02b055 □ HIHAS High-Reliability High-Speed CMOS Logic ICs HARRIS SEMICON» SECTOR CD54HC4518/3A CD54HCT 4518/3A Dual Synchronous BCD Counter ~T<4S-2i>-OS The RCA CD54HC4518 and CD54HCT4518 are dual BCD up-counters. Each device consists o f tw o independent

BU506D

Abstract: BU506 EB251
Contextual Info: I I N AMER PHILIPS/DISCRETE b TE D • bbSBTBl D02B251 A 473 * A P X BU506 BU506D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits o f colour television receivers and fo r line operated switch-mode applications.

by617

Abstract: eht rectifier monitor EHT diode Cathode indicated by blue band eht of monitor ee4 diode
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbS3131 D02bSD4 5 IS * A P X Philips Sem iconductors Product specification EHT avalanche very fast *. . soft-recovery diodes FEATURES • • • Soft-recovery non snap-off characteristics Capable of absorbing avalanche

2PB709R

Abstract: 2PD601A 2PB709 2PB709A 2PB709AQ 2PB709AR 2PB709AS 2PB709Q 2PB709S 2PD601
Contextual Info: bbSa^ai D02bG4tì 17T Philips Semiconductors IAPX PNP general purpose transistor 2PB709; 2PB709A N AUER PHILIPS/DISCRETE FEATURES Objective specification b?E D PIN CONFIGURATION • High O C cu ren t gain • Low collector-emitter saturation voltage. H- D ESCRIPTIO N

Contextual Info: 1N4150 1N4151 1N4153 b b S B ' m D02b^03 202 H A P X N AUER PHILIPS/DISCRETE b^E D _X' V ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in subminiature DO-35 envelopes. The IN4150 is primarily intended for general purpose use in computer and industrial applications.

lm555 timer ic use in mobile charger

Abstract: LM2575-ADJ 12v battery charger lm317 charger on LM358 lm358 timer lm555 texas lm338 application notes lm2575adj variable voltage regulator LM317 lm358 gain formula
Contextual Info: LM3420 LM3420-4.2, -8.2, -8.4, -12.6, -16.8 Lithium-Ion Battery Charge Controller Literature Number: SNVS116C LM3420-4.2, -8.2, -8.4, -12.6, -16.8 Lithium-Ion Battery Charge Controller General Description The LM3420 series of controllers are monolithic integrated

26Lv31

Abstract: D01B D03A d03b D02A D04A D04B SP431
Contextual Info: SP431 High Speed, +3.3V Quad RS-422 Differential Line Driver • Compatible with the EIA standard for RS-422 serial protocol ■ Quad Differential Line Drivers ■ High-Z Output Control ■ At Least 60Mbps Transmission Rates ■ 11ns Typical Driver Propagation Delays

Contextual Info: B U R R -B R O W N [ OPA26Q4 1 Dual FET-lnput, Low Distortion OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • LOW DISTORTION: 0.0003% at 1kHz LOW NOISE: 10nVWRz HIGH SLEW RATE: 25V/|IS WIDE GAIN-BANDWIDTH: 20MHz

Contextual Info: B U R R -B R O W N | e =» b M OPA6Q4 FET-lnput, Low Distortion OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW DISTORTION: 0.0003% at 1kHz • LOW NOISE: 10nVWfiz • PROFESSIONAL AUDIO EQUIPMENT • PCM DAC l/V CONVERTER • HIGH SLEW RATE: 25V/us

Contextual Info: H M 5 1 4 1 O O C /C L S e r i e s Preliminary 4,194,304-word x 1-bit Dynamic Random Access Memory HITACHI T he H ita c h i H M 514100C is a CM OS dynam ic R A M o rg a n iz e d 4 ,1 9 4 ,3 0 4 w o rds x 1 b its . HM 514100C has realized higher density, higher

Contextual Info: HM51441OB/BL Series 1,048,576-word x 4-bit Dynamic RAM The Hitachi H M 51441 OB/BL is a CMOS dynamic R A M o rg a n iz e d 1,0 4 8 ,5 7 6 -w o rd x 4 -b it. H M 5 1441 OB/BL h as re a liz e d h ig h e r d en sity , h ig h e r p e rfo rm a n c e and v a rio u s fu n c tio n s by

Contextual Info: 5Ü GEC PLESSEY MAY 1996 S I' M I C O N I U C T O R S ADVANCE INFORMATION DS4054-2.2 WL100 WLAN INTERFACE CIRCUIT The WL100, together with the DE6003 frequency hopping radio transceiver, im plem ents a wide variety of WLAN applications where NRZ encoding is used.

Contextual Info: TOSHIBA UC/UP fciME D • ^ 7 2 ^ DD2b7D4 725 MT0S3 FLOPPY DISK CONTROLLER 11 TC8566AF F lo p p y D is k C ontroller 1. INTRODUCTION TC8566AF is a single chip LSI for Floppy Disk controller which has VFO and other circuits with FDC chip for interfacing a processor to floppy

Contextual Info: High-Voltage, High-Current OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • HIGH OUTPUT CURRENT: 2A min The OPA544 is a high-voltage/high-current opera­ tional amplifier suitable for driving a wide variety of high power loads. High performance FET op amp circuitry and high power output stage are combined on