D01B Search Results

km416c1200j

Abstract: km416c1200 MAS 10 RCD 71FC
Contextual Info: SAMSUNG ELECTRONICS INC b?E ]> • 7Tmi4E D01b3ña 731 SMGK CMOS DRAM KM416C1200 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The S am sung KM416C1200 is a CMOS high speed 1,048,576 bit x 16 Dynam ic Random A ccess Memory. Its

DAC80-ccd-v

Abstract: DAC80CCD-V DAC-80-CCD-V dac80ccdv DAC80-CCD-I DAC80-CCD DAC8Q DAC80 CCD
Contextual Info: BURR-BROWN CORP SEE J> • 17313bS D01bb7S 2 T - S I - O 'i - O H DAC80-CCD B U R R -B R O W N ■ B I B B Integrated Circuit DIGITAL-TO-ANALOG CONVERTER FEATURES DESCRIPTION • 3-DIGIT RESOLUTION • COMPLETE WITH INTERNAL REFERENCE AND OUTPUT AMPLIFIER V MODELS

static var compensator

Abstract: yst60-25 ys170 YST2-03 YST6-01 YS180103 YS130101 ys170 101 ABB Thyristor YST YST60-24
Contextual Info: A B B SEMICONDUCTORS AG Phase Control Thyristors Ordering number Bestellnummer N um .de commande 3ÔE D Hi D01ba3â 000DQ32 □ • A B B Netzthyristoren V drm Itrms Te I tavm A Thyristors de réseau R t h jc F °C K/W kN 0.16 150 Te Itsm VTO rT T “C mñ

Contextual Info: I NPN Silicon AF Transistors 32E D m ÔB3b320 SIEM ENS/ • • • • • ' D01bb20 SPCL-, ^ ' 1' BC817 T WMSIP BC818 SEM ICON DS For general AF applications High collector current High current gain Low collector-emltter saturation voltage Complementary types: BC 807, BC 808 PNP

UL1385

Abstract: D243 D244 D245 IRKL1
Contextual Info: MÛ5SMS2 D01b71ô International IS Rectifier SERIES IRK.L131/132 NEW INT-A-pak Power Modules FAST RECOVERY DIODES INTERNATIONAL T17 • INR RECTIFIER bS E Features I Fast recovery time characteristics I Electrically isolated base plate Industrial standard package

FT1551

Abstract: FT2551
Contextual Info: FUJITSU MICROELECTRONICS 31E D E3 D01bbl2 b E3FMI r-*s- r January 1990 Edition 1.1 FUjlTSU PRODUCT PROFILE - FT2551 Silicon High Speed Power Transistor DESCRIPTION T h e F T 2 5 5 1 is a silicon PNP general purpose, m edium pow er transistor fabricated w ith Fujitsu's unique Ring E m itte r Transistor R E T ) technology. R E T devices are

Contextual Info: s G S-THONSON 07E D | 7 ^ 2 3 7 D01b24S LOW POWER SCHOTTKY INTEGRATED CIRCUITS - 67 C 16374 D T-66-21-51 QUAD 2-INPUT MULTIPLEXER WITH 3-STATE OUTPUTS DESCRIPTION ; The LSTTL/M SIT54LS258/258A , T74LS258/258A Is a Quad 2-Input Multiplexer with 3-state outputs.

2SC3843

Abstract: 6011s
Contextual Info: F U JI TS U M I C R O E L E C T R O N I C S 31E J> O 374^7^2 D01bb52 QFMI cP January 1990 Edition 1.1 FUJITSU P R O D U C T P R O F IL E - 2SC3843 Silicon High Speed Power Transistor 2SC3843 450V, 10A A BSO LU T E M A X IM U M R A T IN G S Param eter Sym bol

Contextual Info: SAMSUNG ELECTRONICS INC fc>7E ] • 7c]fc,l4]i42 D01b32ß 2fei7 KM48C21OOL/LL SMGK CMOS DRAM 2 M x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48C21 OOL/LL is a CMOS high speed 2,097,152 b itx s Dynamic Random Access Memory. It's

FT5760M

Abstract: Fujitsu Silicon Darlington Transistor Array FT5760
Contextual Info: FUJITSU MIC RO ELE CTRONICS 31E D □ 374=î?b2 D01bb70 *1 E3FMI January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - FT5760M Silicon Darlington Transistor Array ABSOLUTE M AXIM U M RATINGS Ta = 2 5 C Sym b o l Rating C o n d itio n V alue U n it - 5 5 ~ +150

OP222

Abstract: FO-91 TRANSISTOR package FO-91 d 1047 transistor PTB23001X PTB23005X PTB32001X PTB32003X FO-41-B PTB42001X
Contextual Info: H AMER PHILIPS/DISCRETE BSE D • bfc,S3T31 D01b533 4 ■ f - 33-£7/ Power Devices MICROWAVE TRANSISTORS CW POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE t Gp PL GHZ VC E (V> <w> (dB) " ; nc (%> CLASS C, MEDIUM POWER PTB23001X PTB23Û03X PTB23005X FO-41B FO-41B

CLEVO

Abstract: SUPPLY98 e11ah DIODE SMD Z18 keyboard and touchpad schematic HS217 y12e C122C1 schematic lg backlight inverter F01J2
Contextual Info: Model 2200S/2700S Service Manual Mainboard 71-2200S-D01B Switchboard 71-22002-001 Invertor board LED Board Part of switchboard Power Board (part of mainboard) Specifications are subject to change without notice. September, 2000 2200S/2700S Service Manual

2SC3845

Abstract: 2SC3842 2SC3847 2SC3844 6011s 2SC3843 2SC3846 fujitsu tg h
Contextual Info: 31E J> FUJITSU MICROELECTRONICS O 374^7^2 D01bb52 QFMI cP January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE- 2SC3843 Silicon High Speed Power Transistor 2SC3843 450V, 10A A BSO LU T E M A X IM U M R A T IN G S Parameter Sym b ol C onditions Rating U nit -5 5 ~ +150

TA7227P

Abstract: TA7227 1DTP TA72 oh140
Contextual Info: TOSHIBA i ELECTRONIC 02 ^□17547 D01b113 7 § D 909724? TOSHIBA. ELECTRONIC 02E 16913 ~~~D T-7^-05-O I TA7227P 5.5W DUAL POWER AMPLIFIER Unit in mm CAR RADIO, CAR STEREO OUTPUT 3Q8MAX. CLgMAX- 3 4.0 ±<1 ¡3 AUDIO POWER AMPLIFIER 5±Û 3 . Dual Mode or Bridge Connection Mode Type.

Contextual Info: SAMSUNG ELECTRONICS INC b?E » • 7 % 4 1 H E D01bb52 SSI KM428C256, KM428V256 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION ■ Dual port Architecture 256K x 8 bits RAM port 512x8 bits SAM port • Performance range : The Samsung KM428C/V256 is a CMOS 256K x 8 bit Dual

Contextual Info: TOSHIBA LASER/FBR OPTIC SOE D • Iì D (ì 7 2 S 2 D01b254 3T3 ■ TOSb^'-^S' TOLD9215(s) MAXIMUM RATINGS (Tc =25°C) CHARACTERISTIC SYMBOL Optical Output Power RATING Po UNIT 10 mW V V LD Reverse Voltage V r (LD) 2 PD Reverse Voltage V r (PD) 30 Operation Case Temperature

160V 30A TRANSISTOR

Abstract: power transistor 200V, 30A
Contextual Info: TOSHIBA { D I S C R E T E / O P T O 9097250 ¿Toshiba T O S H IB A TT < D IS C R E T E / O P T O > DE | l C H 7 a S D D01bflD4 7 |~~ 99D 16804 D T -3 q -\3 TOSHIBA FIE LD EFFECT TRANSISTOR YT F 2 5 0 SIL IC O N N CHANNEL MOS TYPE ff-M OS I SEMICONDUCTOR

32p3013-cm

Abstract: 32p3013 32d4661
Contextual Info: JmMkms’ SSI 32P3013 Pulse Detector with Programmable Filter A TDK Group/Company September 1994 DESCRIPTION FEATURES The SSI 32P3013 is a bipolar integrated circuit that provides all the data processing for pulse detection and four-burst servo capture from encoded read signals.

2SA1635

Abstract: 2SC4008 SC-75A
Contextual Info: 2SA1635 2SC4008 Transistors Power Transistor —80V, —4A I 2SA1635 •F e a tu re s #A bsolute maximum ratings ( T a = 2 5 t ) 1 ) Low VcE(sai). (Typ. — 0 . 3 V at Ic / I b = — 2 /—0.2A) 2 ) Excellent DC current gain characteristics. 3 ) Pc = 3 0 W ( T c = 2 5 ‘C )

26Lv31

Abstract: D01B D03A d03b D02A D04A D04B SP431
Contextual Info: SP431 High Speed, +3.3V Quad RS-422 Differential Line Driver • Compatible with the EIA standard for RS-422 serial protocol ■ Quad Differential Line Drivers ■ High-Z Output Control ■ At Least 60Mbps Transmission Rates ■ 11ns Typical Driver Propagation Delays

2SB1192

Abstract: 2SB1192A 2SD1772 2SD1772A
Contextual Info: Power Transistors 2SD1772, 2SD1772A 2SD1772, 2SD1772A Silicon PNP Triple-Diffused Planar Type Package Dimensions Power Amplifier Vertical Deflection Output Complementary Pair with 2SB1192, 2SB1192A • Features U n it ! m n 4 . 4 m a \. 10 . 2 m a \. ¡2 9 m a \

n20s

Abstract: A144 BG256 IEEE1164 Military Plastic pASIC 3 Family 256
Contextual Info: 3T PRELIMINARY CYPRESS Ultra38007 UltraLogic Very High Speed 7K Gate CMOS FPGA Features — Minimum Iol and Ioh 24 mA Flexible logic cell architecture — Wide fan-in up to 16 input gates — Multiple outputs in each cell — Very low cell propagation delay

transistors 2sd

Abstract: 2SD1754 2SD1754A
Contextual Info: P ow er Tra n sisto rs 2SD1754, 2SD1754A 2SD1754, 2SD1754A Silicon PNP Triple-Diffused Planar Type High h FE, • P ack age D im ension s P ow er A m plifier U n i t ! mm ■ F e a tu re s • High D C c u rre n t gain h fE • Good lin earity o f DC c u rr e n t gam (h FE)

2SD1034

Abstract: 2SD1634 panasonic 2SD
Contextual Info: Power Transistors 2SD 1Ó 34 2SD1634 Silicon PNP Triple-Diffused Planar Darlington Type Package D im ensions Power S w itching U nit ! mm • Features 4 .4m ax. 10.2m ax. • High sp eed sw itching 2.9 m a \ • G ood linearity of DC current gain hFE • “Full P ack” package for simplified m ounting on a heat sink with one