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    FUJITSU SILICON DARLINGTON TRANSISTOR ARRAY Search Results

    FUJITSU SILICON DARLINGTON TRANSISTOR ARRAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    FUJITSU SILICON DARLINGTON TRANSISTOR ARRAY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor C3866

    Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
    Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)


    Original     		PDF

    FT5754M

    Abstract: FT5754 FT5757M FT5754M Pin ft5757
    Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE' FT5754M, FT5757M Silicon Darlington Transistor Array ABSO LUTE MAXIMUM RATINGS Ta Rating Symbol Condition = 25aC Value Unit


    OCR Scan     		PDF FT5754M, FT5757M FT5757M FT5754M FT5754 FT5754M Pin ft5757

    FT5754M

    Abstract: FT5754 FT5754M Pin FT5757M FT5757 T-43-25 FT57 B-500 diode
    Text: FUJITSU MICROELECTRONICS 31E D 374*i7b2 GOlbbbM 3 E l F ill January 1990 Edition 1.1 FTS7S4M, FT5757M FUJITSU PRODUCT PRO FILE- Silicon Darlington Transistor Array ABSOLUTE M A XIM U M RATINGS Rating Ta = 25°C Symbol Condition Value Unit -5 5 ~ +150 °C


    OCR Scan     		PDF FT5754M, FT5757M 10-Pi T-43-25 Ta-25 Ta-25Â FT5754M FT5754 FT5754M Pin FT5757M FT5757 T-43-25 FT57 B-500 diode

    FT5764M

    Abstract: FT5764 ft5767m FT57 T-43-25
    Text: FUJITSU MICROELECTRONICS 31E » E3 3 7 4 ^ 2 ODlbbTb T BiFMI Cp January 1990 Edition 1.1 T'-M'IS' FUJITSU PRODUCT PROFILE'- FT5764M, FT5767M Silicon Darlington Transistor Array ABSOLUTE M A XIM U M RATINGS {Ta = 25° C Sym b o l Rating Storage Temperature


    OCR Scan     		PDF D01bfc FT5764M, FT5767M Ta-25 Vcc-30V c/500 FT5764M FT5764 ft5767m FT57 T-43-25

    FT5753M

    Abstract: FT5756M FT5753 ft5753m DARLINGTON TRANSISTOR ARRAY ft575 T-43-25 Fujitsu Silicon Darlington Transistor Array
    Text: FUJITSU MI CR OELECTRON ICS 31E » E3 0Qlbbb2 T Q F M I T '-'iZ 'O .s r January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE^ FT5753M, FT5756M Silicon Darlington Transistor Array ABSOLUTE MAXIMUM RATINGS Ta » 25° C Symbol Rating Storage Temperature T «9 Junction Temperature


    OCR Scan     		PDF FT5753M, FT5756M T-43-25 c/500 FT5753M FT5756M FT5753 ft5753m DARLINGTON TRANSISTOR ARRAY ft575 T-43-25 Fujitsu Silicon Darlington Transistor Array

    FT5760M

    Abstract: Fujitsu Silicon Darlington Transistor Array FT5760
    Text: FUJITSU MIC RO ELE CTRONICS 31E D □ 374=î?b2 D01bb70 *1 E3FMI January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - FT5760M Silicon Darlington Transistor Array ABSOLUTE M AXIM U M RATINGS Ta = 2 5 C Sym b o l Rating C o n d itio n V alue U n it - 5 5 ~ +150


    OCR Scan     		PDF D01bb FT5760M -90mA, 300/us FT5760M Fujitsu Silicon Darlington Transistor Array FT5760

    FT5763M

    Abstract: FT5763 FT5766M Fujitsu Silicon Darlington Transistor Array T-43-25
    Text: 31E D FUJITSU MICROEL ECT RONICS Q 374=57^2 QQlbb74 b Q F M I January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE- FT5763M, FT5766M Silicon Darlington Transistor Array FT 5763M , F T 5766M A B SO LU T E M A X IM U M R A T IN G S Rating Ta = 25°C Storage Temperature


    OCR Scan     		PDF 001bb74 FT5763M, FT5766M FT5766M 374cJ7b2 001bb7S T-43-25 FT5763M FT5763 Fujitsu Silicon Darlington Transistor Array T-43-25

    FT5759M

    Abstract: No abstract text available
    Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE . FT5759M Silicon Darlington Transistor Array ABSOLUTE M A X IM U M R A TIN G S Rating Symbol Condition Value Unit -55 - +1 50 “C T, + 150 °C Collector to Base Voltage VcBO -100 V Emitter to Base Voltage


    OCR Scan     		PDF FT5759M FT5759M

    FT5755M

    Abstract: FT5758M T-43-25 ft5758m DARLINGTON TRANSISTOR ARRAY FT5758 Fujitsu Silicon Darlington Transistor Array
    Text: FUJITSU MICROELECTRONICS 31E D E3 3 7 4 ci7b5 DDlbbbb 7 B I F M I 'T ' January 1990 Edition 1.1 Füjfrsu PRODUCT P R O FILE- FT5755M, FT5758M Silicon Darlington Transistor Array ABSOLUTE MAXIMUM RATINGS Rating Ta s 25 C Symbol Condition Value Unit -5 5 ~ +150


    OCR Scan     		PDF FT5755M, FT5758M T-43-25 Ta-25 FT5755M FT5758M T-43-25 ft5758m DARLINGTON TRANSISTOR ARRAY FT5758 Fujitsu Silicon Darlington Transistor Array

    Untitled

    Abstract: No abstract text available
    Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE FT5786M Silicon Darlington Transistor Array ABSOLUTE M A X IM U M R A TIN G S Ta = 25°C Sym bol Value C onditions U n it NPN Storage Tem perature T s Junction Tem perature Ti Collector to Base Voltage


    OCR Scan     		PDF FT5786M

    FT5760M

    Abstract: TRANSISTOR A-318
    Text: January 1990 Edition 1.1 — FUJITSU P R O D U C T PR O FILE FT5760M Silicon Darlington Transistor Array ABSOLUTE M AXIM UM RATINGS _ Rating Ta = 25°C C o ndition Sym bol Storage Tem perature T« 0 Jun ctio n Tem perature T¡ C ollector to Base Voltage


    OCR Scan     		PDF FT5760M FT5760M TRANSISTOR A-318

    FT5777M

    Abstract: No abstract text available
    Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE FT5777M Silicon Darlington Transistor Array A BSO LUTE M AXIM UM RATING S Ta = 25°C Sym b o l V alue Conditions U nit N PN Strage? Tem perature Tstg PN P -50 ~- +150 °C + 150 °C Ju n c tio n Tem perature


    OCR Scan     		PDF FT5777M FT5777M

    FT5778M

    Abstract: No abstract text available
    Text: January 1990 Edition 1.1 FTS778M FUJITSU PRODUCT PROFILE Silicon Darlington Transistor Array A B SO LU T E M A X IM U M R A T IN G S Ta = 25°C Rating Symbol Storage Temperature Junction Temperature Collector to Base Voltage Em itter to Base Voltage Collector to Em itter Voltage


    OCR Scan     		PDF FTS778M FT5778M FT5778M

    FT5778M

    Abstract: T-43-25 pnp DARLINGTON TRANSISTOR ARRAY til 31a Fujitsu Silicon Darlington Transistor Array
    Text: FUJITSU MICRO ELE CTRONICS 31E D E3 374=57^2 DOlbbTD M EIFMI cO '-<v January 1990 Edition 1.1 . — r-".-: —— PRODUCT PROFILE FT5778M Silicon Darlington Transistor Array ABSOLUTE M AXIMUM RATINGS Rating lT a = 2 5°C V alue C o n d itio n s Sy m b o l


    OCR Scan     		PDF FT5778M 13-Pin lc/500 CC--30V FT5778M T-43-25 pnp DARLINGTON TRANSISTOR ARRAY til 31a Fujitsu Silicon Darlington Transistor Array

    FT5758M

    Abstract: FT5755M FT5755 ft5755m DARLINGTON TRANSISTOR ARRAY
    Text: Januar/ 1990 Edition 1.1 FUJITSU PRODUCT PROFILE . FT5755M, FT5758M Silicon Darlington Transistor Array ABSOLUTE M AXIM UM RATINGS Ta = 2 5 ° C I R a tin g S ym bol S to ra g e T e m p e ra tu re T«g J u n c tio n T e m p e ra tu re T¡ C o n d itio n U n it


    OCR Scan     		PDF FT5755M, FT5758M FT5758M FT5755M FT5755 ft5755m DARLINGTON TRANSISTOR ARRAY

    ft5764m

    Abstract: FT5764 Fujitsu Silicon Darlington Transistor Array
    Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE. FT5764M, FT5767M Silicon Darlington Transistor Array ABSO LUTE MAXIMUM RATINGS R a tin g {T a = 2 5 ° C Sym bol S to ra g e T e m p e ra tu re C o n d itio n V a lu e -55 T *tS J u n c t io n T e m p e ra tu re


    OCR Scan     		PDF FT5764M, FT5767M ft5764m FT5764 Fujitsu Silicon Darlington Transistor Array

    FT5769M

    Abstract: ft5769
    Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE FT5769M Silicon Darlington Transistor Array A BSO LUTE MAXIMUM RATINGS R a tin g T a = 2 5 ° C Sym bol C o n d itio n V a lu e Cc T «9 J u n c t io n T e m p e ra tu re Ti +150 °C C o lle c to r to Base V o lta g e


    OCR Scan     		PDF FT5769M FT5769M ft5769

    Fujitsu Silicon Darlington Transistor Array

    Abstract: FT5787M
    Text: January 1990 Edition 1.1 FUJITSU = PRODUCT PROFILE FT5787M Silicon Darlington Transistor Array ABSOLUTE M AXIM UM RATINGS Ta = 2 5 ° C I V a lu e R a tin g Sym bol C o n d itio n s U n it NP N S to ra g e T e m p e ra tu re J u n c tio n T e m p e ra tu re


    OCR Scan     		PDF FT5787M FT5787M Fujitsu Silicon Darlington Transistor Array

    FT5753M

    Abstract: ft5753m DARLINGTON TRANSISTOR ARRAY FT5756M FT5753 Fujitsu Silicon Darlington Transistor Array
    Text: January 1990 Edition 1.1 FT5753M, FT5756M FUJITSU - P R O D U C T P R O F IL E Silicon Darlington Transistor Array ABSOLUTE M AXIM UM RATINGS _ R a tin g Ta = 2 5 °C S ym bol S to ra g e T e m p e ra tu re C o n d itio n T *9 J u n c tio n T e m p e ra tu re


    OCR Scan     		PDF FT5753M, FT5756M FT5753M ft5753m DARLINGTON TRANSISTOR ARRAY FT5756M FT5753 Fujitsu Silicon Darlington Transistor Array

    FT5763M

    Abstract: FT5763
    Text: January 1990 Edition 1.1 FUJITSU PRO DUCT P RO FILEZ FT5763M, FT5766M Silicon Darlington Transistor Array FT5763M , FT5766M A BSO LUTE MAXIMUM RATINGS R a tin g S to ra g e T e m p e ra tu re V alue -5 5 T- s J u n c tio n T e m p e ra tu re VcBO E m itte r t o Base V o lta g e


    OCR Scan     		PDF FT5763M, FT5766M FT5763M FT5766M FT5763M FT5763

    SS510

    Abstract: transistor 2 Amp 3 volt Fujitsu Silicon Darlington Transistor Array transistor A11 220 fujitsu transistor 2SD560 npn 8 transistor array 2SD56 darlington array 374171
    Text: Fujitsu m icroelectronics 3?c d | 374=i7t.2 □□□itibM FU JIT SU 2SD560 M IC R O E L EC T R O N IC S SILICON NPN EPITAXIAL *> DARLINGTON TRANSISTOR 5 AMP, 100 VOLT 3 7 4 9 7 fc>¿ F U J I T S U i MICROELECTRONICS 7 l 0 1 8 6 4 DESCRIPTION T h e 2SD560 is a low c o s t Darl­


    OCR Scan     		PDF 2SD560 2SD560 RM-60 mi311 TQ-220 SS510 transistor 2 Amp 3 volt Fujitsu Silicon Darlington Transistor Array transistor A11 220 fujitsu transistor npn 8 transistor array 2SD56 darlington array 374171

    Untitled

    Abstract: No abstract text available
    Text: January 1990 Edition 1.1 FUJITSU PRO DUCT P R O FILE - FT5776M Silicon Darlington Transistor Array A BSO LU TE MAXIMUM RATINGS <Ta = 2 5 ° C V a lu e R a tin g Sym bol C o n d it io n s U n it N PN Sto ra g e T e m p e ra tu re ^stg J u n c t io n T e m p e r a t u r e


    OCR Scan     		PDF FT5776M FT5776M

    FT5753M

    Abstract: FT5754M FT5764M FT5778M ft5769m FT5754M Pin FT5758M FT5755M d5 transistor npn FT5763M
    Text: Darlington Transistor Arrays Power Transistor Products INTRODUCTION D A R L IN G T O N T R A N S IS T O R A R R A Y S E R IE S Description This series is Silicon D arlington Transistor Arrays. Each array consists o f 4-D arlin gton Transistors. T h e array is packaged in a small plastic 12-pin single in-line package w ith or


    OCR Scan     		PDF 12-pin FT5753M FT5754M FT5764M FT5778M ft5769m FT5754M Pin FT5758M FT5755M d5 transistor npn FT5763M

    transistor cross reference

    Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
    Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC


    OCR Scan     		PDF