D 44 NPN Search Results

a 933 transistor

Abstract: BFR90A 2912 TRANSISTOR PNP bfr90A philips BFQ51 3FR90 mcd001
Contextual Info: Philips Semiconductors Product specification 7 = 3 A -/7 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES SbE D ^ BFR90A 7110fi5Li □D4St.cì2 44Ì M P H I N PINNING • Low noise • Low intermodulation distortion PIN • High power gain 1 •

LP319

Abstract: IC 74LS00
Contextual Info: I IP 11Q IP7Q 11 LOW POW ER QUAD D IFFER EN TIA L C OM PARATORS 030 44 , OCTOBER 1987-REVISED MAY 1988 • Ultralow Power Supply Current Drain . . . Typically 6 0 /»A • Low Input Biasing Current . . . 3 nA D, J, OR N PACKAGE (TOP VIEW • Low Input Offset Current . . . ± 0 .5 nA

2SD1322

Contextual Info: P o w e r T ra n s is to rs b T B2 f l 5 2 2SD1322 Q01b700 2SD1322 fc>44 Package Dimensions Silicon NPN Triple-Diffused Planar Darlington Type Medium Speed Power Switching • Features • 3 0V Z e n e r d io d e built-in b e tw e e n C and B • V e r y sm a ll flu c tu a tio n in b r e a k d o w n v o lt a g e s

2SC3660A

Abstract: nec 2sc3660A diode gp 426 2SC3660 NEM060C69-28 NEM080C69-28 NEM080CC9-28 NEM080CM-28 4a7m1 J11J
Contextual Info: NEC/ CALIFORNIA SbE D b427414 0002550 NEC CLASS AB/C, UHF, 28 VOLT PUSH-PULL TRANSISTOR 7 44 « N E C C NEM060C69-28 NEM080C69-28 OUTLINE DIMENSIONS FEATURES Units in mm O U TLIN E 69 • HIGH P O W E R A N D H IGH GAIN: Vcc = 28 V, C lass A B N EM 080C69-28: Po = 49.6 dBm, G p = 5.6 dB (TYP)

TRANSISTOR K 1507

Contextual Info: Preliminary Specifications 3 Volt, Low Noise High fT Silicon Transistor MA4T6310 Series V 2.00 SOT-23 Features ● ● ● ● ● 1.5 dB Noise Figure at 0.5 mA 13 dB Gain at 1 GHz 14 GHz fT Low Cost Plastic Package Available on Tape and Reel Description The MA4T6310 series of low current, high fT silicon NPN

TRANSISTOR 3kw

Abstract: C4131 TRANSISTOR 3kw 11 2N2920DCSM small signal transistor S4 C3 5V 3kw transistor
Contextual Info: 2N2920DCSM–QR–B DUAL NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 3 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A= 4.32 ± 0.13 (0.170 ± 0.005)

sot23 1303

Abstract: IC 3263 NPN bipolar junction transistors max hfe 2000 1272 hybrid 1303 SOT23 MA4T324335
Contextual Info: Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features ● ● ● ● ● ● ● Designed for 3-5 Volt Operation Useable to 6 GHz in Oscillators Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz Useful for Class C Amplifiers

2SC2407 equivalent

Abstract: 2SC2407 NC921 nec 2561 equivalent 2SC1592 NE41607 2sc1949 2SC1426 equivalent nec 2561 le NE41600
Contextual Info: N E C/ 1SE CALIFORNIA L4H7414 D 0001.310 L> T -3 H T T NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE FIGURE: 1 dB at 70 MHz The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The

al 232 nec

Abstract: NE64400 NE644 NE64408 S21E
Contextual Info: N E C / C A L IF O R N I A SbE ]> • bM2741M 0QD2417 2MD H N E C C -r r -3 l NPN SILICON HIGH FREQUENCY TRANSISTOR 7 NE64400 NE64408 FEATURES DESCRIPTION AND APPLICATIONS • LO W N O IS E F IG U R E : 2.7 d B at 4 GHz The NE644 is the latest in a series of NPN silicon transistors

NE02136

Abstract: 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package
Contextual Info: N E C / 1SE D CALIFORNIA r - 3 / '/ 5 b427414 000137S 1 NPN SILICON HIGH FREQUENCY TRANSISTOR T '3 i- I 7 NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­

2SC4087

Abstract: 2SC4090 NE73439 NE73439B
Contextual Info: NEC/ 5bE D CALIFORNIA NEC b427414 00024btì b4T • N E C C T - 'S l- is NPN SILICO N GENERAL PU RPO SE TRANSISTO R NE73439 NE73439B OUTLINE DIMENSIONS FEATURES • H IG H G A IN BA N D W ID T H P R O D U C T : Units in mm OUTLINE 39 (SOT-143) 2.0 GHz (TYP)

Contextual Info: OPB 740 Series Reflective Object Sensors Description The OPB740 through OPB744 series of reflective object sensors each consist of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on converging optical axes in an black plastic

ZBD849

Abstract: transistor bf 970
Contextual Info: NPN SILICON PLANAR POWER TRANSISTOR ZBD849 THERMAL CHARACTERISTICS PARAMETER Thermal Resistance Junction To Ambient Junction To Case SYMBOL MAX UNIT Rth j-amb Rth(j-case) 75 7 °C/W °C/W ZBD849 PROVISIONAL DATASHEET ISSUE A – MARCH 94 FEATURES * Fast switching

NEC 41-A 002

Abstract: NE333 NE33387 ne33353 NE33300 NE33353B NE33353E
Contextual Info: NEC/ CALIFORNIA NEC SbE T> m 1,427414 0GQE3a2 IT I HNECC NE33300 NE33353E NE33353B NE33387 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • 450 mW LINEAR POWER OUTPUT at 2 GHz Com m on-Em ilter The NE333 series o f NPN silico n transistors Is designed for

2N2916DCSM

Contextual Info: 2N2916DCSM DUAL NPN PLANAR TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 1 .4 0 ± 0 .1 5 (0 .0 5 5 ± 0 .0 0 6 ) 0 .6 4 ± 0 .0 6 (0 .0 2 5 ± 0 .0 0 3 ) 1 .6 5 ± 0 .1 3

REFLECTIVE SENSOR OPB

Abstract: K8702 Sensor OPB K8701 K8711 K8709 K8710 K8708 K8713 K-8709
Contextual Info: OPB 740 Series Reflective Object Sensors Description The OPB740 through OPB744 series of reflective object sensors each consist of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on converging optical axes in an black plastic

2SC1600

Abstract: NE57510 NE57500 ne575 2SC1042 2SC1642 NE57520 321E S21E 2SC164
Contextual Info: NEC/ CALIFORNIA NEC SbE D b4S7414 00053^^ 4TS * N E C C T ^ - o s NE57500 NE57510 NE57520 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 700 m W at 1.7 GHz The NE575 series of NPN silicon medium power transistors is

2SC2150

Abstract: NE57835 NE578 nec NE57800 NE57807 2SC215 NE AND micro-X NE578 transistor NEC ka 42
Contextual Info: NEC/ CALIFORNIA NEC 5 bE D b427414 000540b 4bS HINE CC NE57800 NE57807 NE57835 NPN SILICON MICROWAVE TRANSISTOR "í-si-n - FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 6 GHz The NE578 series of NPN silicon transistors is designed for use

transistor power 5w

Abstract: Transistor 5503 transistor 1271 SILICON npn POWER TRANSISTOR c 869 D 595 transistor transistor J17 2052-5636-02 transistor C 1344 transistor Common Base configuration j170
Contextual Info: an AMP company CW Power Transistor, ,2.3 GHz 5W PH2323-5 v2.00 Features l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System

MRF5811LT1

Abstract: MRF5811L 742 792 07 742 792 71 Transistor motorola 418 742 792 116 NF50 TUNER 0436 HP11590B
Contextual Info: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz

Contextual Info: This component is RoHS compliant OPI-110 Series Optically Coupled Isolators Pb ATEX and IECEx CERTIFIED The OPI-110, A/B/C and D are a family of optically coupled isolators, each consisting of a infrared light emitting diode, coupled to an NPN silicon phototransistor sealed in an injection moulded plastic housing. This series is designed for

OPI110

Abstract: OPI-110 OPI110D
Contextual Info: OPI-110 Series Optically Coupled Isolators BASEEFA and ATEX CERTIFIED BASEEFA Certified BAS No. Ex 95C2096U EEx ia IIC The OPI-110, A/B/C and D are a family of optically coupled isolators, each consisting of a infrared light emitting diode, coupled to an NPN silicon phototransistor sealed in an

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 10 4 8 A ISSUE 3 - FEBRUARY 1995. — . FEATURES * * V cev =50V Very Low Saturation Voltages * High Gain * 20 A m p s pulse current

Contextual Info: SEME BUY49S LAB MECHANICAL DATA Dimensions in mm inches HIGH VOLTAGE MEDIUM CURRENT SILICON EXPITAXIAL PLANAR NPN TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) APPLICATIONS 0.41 (0.016)