CXK51 Search Results

51256P

Contextual Info: CXK51256P 35/45/55 SONY 262,144-word x 1 bit High Speed CMOS Static RAM Description C XK 51256P is 2 6 2 ,1 4 4 - w o r d x 1 b it h ig h speed CM OS s ta tic RAM o rg a n ize d as 2 6 2 ,1 4 4 -w o rd by 1 b it a nd o p e ra te s fro m a s in g le 5 V su p p ly .

Contextual Info: CXK5164P/J 25/30/35 SONY* 65,536-word X 1-bit High Speed CMOS Static RAM Description C X K 5 1 6 4 P /J are 6 5 ,5 3 6 bits high speed CMOS sta tic RAMs organized as 65,536 w ords by 1 b it and operate fro m a single 5V supply. These devices have separate Data in p u t and

Contextual Info: CXK5164P/J 25/30/35 SONY* 65,536-word X 1-bit High Speed CMOS Static RAM Description C X K 5 1 6 4 P /J are 6 5 ,5 3 6 bits high speed CMOS sta tic RAMs organized as 65,536 w ords by 1 b it and operate fro m a single 5V supply. These devices have separate Data in p u t and

CXK516100TM-70LL

Abstract: cxk516100 CXK5161OOTM CXK516100TM CXK5161
Contextual Info: SONY C X K 5 1 6 1 O O TM -70LL 65536-word x 16-bit High Speed CMOS RAM Description CXK516100TM is a high speed CMOS static RAM organized as 65536-words by 16bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.

static ram 2015

Abstract: CXK51256P-35
Contextual Info: CXK51256P 35/45/55 SONY» 262,144-word X 1 bit High Speed CMOS Static RAM Description CXK51256P is 2 6 2 ,1 4 4 -w o rd x 1 b it high speed CMOS sta tic RAM organized as 2 6 2 ,1 4 4 -w o rd by 1 bit and operates from a single 5V supply. T his device is suitable fo r use in high speed

static ram 2015

Abstract: CXK51256P-35
Contextual Info: CXK51256P 35/45/55 SONY» 262,144-word X 1 bit High Speed CMOS Static RAM Description CXK51256P is 2 6 2 ,1 4 4 -w o rd x 1 b it high speed CMOS sta tic RAM organized as 26 2 ,1 4 4 -w o rd by 1 bit and operates from a single 5V supply. T his device is suitable fo r use in high speed

516100

Contextual Info: SONY C X K 516100TM -70LL 65536-word x 16-bit High Speed CMOS RAM Description 44 pin TSOP Plastic CXK516100TM is a high speed CMOS static RAM organized as 65536-words by 16bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

STATIC RAM 8464

Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
Contextual Info: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

mcm2018a

Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

cx20185

Abstract: UHF FM Transceiver motorola 5118 motorola 5118 uhf CXA1446S Sony Semiconductor ILX511 CXA1691 CXA1733M CXA1619S SONY ICX
Contextual Info: Sony Semiconductor 96.10 Sony Semiconductor Product List ’96 – 10 TABLE OF CONTENTS MEMORY CMOS/Bi-CMOS SRAM . 1 • LINEUP . 1

sun hold RAS 0610

Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information