COLLECTOR 5V NPN TRANSISTOR Search Results

mps3569

Abstract: ebc Transistor
Contextual Info: CRO DESCRIPTION MPS3569 NPN SILICON TRANSISTOR TO-92A MPS3569 is NPN silicon plapar epitaxial transistor designed for AF medium power amplifiers. EBC ABSOLUTE MAXIMUM RATINGS 80V 40V 5V 1A 625mW -55 to +150°C V cbo VcEO V ebo Collector-Base Voltage Collector-Emitter Voltage

2sc2233

Abstract: Collector 5v npn TRANSISTOR 5v power transistor horizontal transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2233 DESCRIPTION •Collector-Emitter Breakdown Voltage:VCEO= 60V Min ·DC Current Gain: hFE= 30(Min)@ (VCE= 5V, IC= 1A) ·High Collector Current ·High Collector Power Dissipation

2N3417

Abstract: NPN transistor ECB TO-92 transistor BO 540
Contextual Info: TO-92 2N3417 is NPN silicon planar transistor designed for general purpose AF medium power applications. ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCBO 50V Collector-Emitter Voltage VCEO 50V Emitter-Base Voltage VE BO 5V Collector Current IC Total Power Dissipation

2N3904N

Abstract: 2N3904 tr 2n3904
Contextual Info: 2N3904N Semiconductor NPN Silicon Transistor Descriptions • General small signal application • Switching application Features • Low collector saturation voltage : VCE sat =0.3V(MAX.) @ IC=50mA, IB=5mA • Low collector output capacitance : Cob = 3pF(Typ.) @ VCB=5V, IE=0, f=1MHz

2SA1680

Abstract: 2SC4408 transistor 2SA1680
Contextual Info: TO SH IBA 2SC4408 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4408 Unit in mm 5.1 MAX. POWER SWITCHING APPLICATIONS • • • • Low Collector Saturation Voltage v CE(sat) = °-5V (Max.) High Collector Power Dissipation PC = 900mW (Ta = 25°C)

2SA1680

Abstract: 2SC4408
Contextual Info: TO SH IBA 2SC4408 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4408 Unit in mm POWER AMPLIFIER APPLICATIONS 5.1 MAX. POWER SWITCHING APPLICATIONS • • • • Low Collector Saturation Voltage v CE(sat) = °-5V (Max.) High Collector Power Dissipation PC = 900mW (Ta = 25°C)

2SC2373

Abstract: m0spec
Contextual Info: ÆàMOSPEC NPN SILICON POWER TRANSISTORS NPN .specifically designed for use in horizontal deflection output for BAA/ TV applications 2SC2373 FEATURES: * Low Collector-Emitter Saturation Voltage 7.5 AMPERE SILICON POWER TRANASISTORS 100 VOLTS 40 WATTS VCE satf 1-5V(Max @ Ic=5 0A,Ib=0.5A

2n5076

Abstract: 2N5077
Contextual Info: high-rei power transistors 85 - 1 I SILICON NPN HI-VOLTAGE TRANSISTORS 5 Amp NORMALIZED CURRENT GAIN 200 ~ TA=lS0C ~ ISO w "- ~, ~ ~ ~ z• TAO 25°C ;( 100 C> I VCE '5V I- Z W Qi: SO a: ~ -. U TA: -SSoC o .01 .001 COllECTOR CURRENT, IC (AMPS) COllECTOR

B904

Abstract: D1213 2SB904 D152 2SD121
Contextual Info: Ordering number ¡EN1022A 2SB 904/2SD 1213 PNP/NPN Epitaxial Planar Silicon Transistors 30V/20A High-Speed Switching Applications Use • Large current switching of relay drivers, high-speed inverters, converters Features • Low collector-to-emitter saturation voltage: VcE sat =~0-5V{PNP), 0.4(NPN) max.

TRANSISTOR SOT23, Vbe 8V

Abstract: FMMT614 DSA003700
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FMMT614 TYPICAL CHARACTERISTICS 2 2 +25°C I+/I*=1000 1m 75k 10m 100m 1 10 1m 100m 10m 1 IC - Collector Current A IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 2.4 V+-=5V ABSOLUTE MAXIMUM RATINGS.

SOT-363 marking 05

Abstract: transistor e1 sot-363 TSAD143K TSCD143K TSCD143KCU6
Contextual Info: TSCD143K NPN Digital Transistor Pin assignment: 1. TR1 Gnd Emitter 2. TR1 Input (Base) 3. TR2 Output (Collector) 4. TR2 Gnd (Emitter) 5. TR2 Input (Base) 6. TR1 Output (Collector) Vcc = 50V Vin = - 5V ~ +30V Io = 100mA(max.) Features Equivalent Circuit Build-in bias resistor enable the configuration of an

Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FMMT614 TYPICAL CHARACTERISTICS 2 2 +25°C I+/I*=1000 1m 75k 10m 100m 1 10 1m 100m 10m 1 IC - Collector Current A IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 2.4 V+-=5V ABSOLUTE MAXIMUM RATINGS.

Contextual Info: T O SH IB A 2SC4408 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4408 Unit in mm 5.1 M A X . POWER SWITCHING APPLICATIONS • • • • Low Collector Saturation Voltage : V qe (sat) = 0*5V (Max.) High Collector Power Dissipation : P q = 900mW (Ta = 25°C)

603 transistor npn

Abstract: ozone sensor GSA-603 GSA-601S NPN TRANSISTOR "NPN Transistor" 603 transistor ozone transistor 603 010PPM
Contextual Info: ozone allied products ozone sensor Model Appearance Power supply Output Environment condition for operation Storage temperature range Detection concentration Dimensions GSA-601S DC 5V NPN transistor open-collector output Tr1 : on at more than a preset value Max 150mA

2-5K1A

Abstract: 2-5K1A toshiba 2SA1681 2SC4409 toshiba Transistor Silicon pct toshiba marking 12w
Contextual Info: TO SHIBA 2SC4409 2SC4409 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS. 1.6 MAX. 4.6 MAX. 1.7MAX. Low Collector Saturation Voltage : VCE (sat)“ °-5V (Max.) (at Ie = lA)

2SB919

Abstract: jo16 2SD123
Contextual Info: Ordering number: EN1046B 2S B 919/2S D 1235 PNP/NPN Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications Use Large current switching o f relay drivers, high-speed inverters, converters Features • • Low collector-to-em itter saturation voltage: V cE sa t = _ '0 .5V(PNP), 0.4(NPN) max.

laser LED

Abstract: ZTX413 AVALANCHE TRANSISTOR edge emitter LED LED driver 110V DSA003766 avalanche mode transistor
Contextual Info: NPN SILICON PLANAR AVALANCHE TRANSISTOR ZTX413 ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Emitter Inductance Le Transition Frequency Collector-Base Capacitance MIN. TYP. MAX. UNIT CONDITIONS. 6 nH With 3mm leads fT 150 MHz IC=10mA, VCE=5V f=20MHz Ccb 2 pF

Contextual Info: TOSHIBA 2SC4409 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4409 Unit in mm ra POWER SWITCHING APPLICATIONS. 1.6MAX. 1.7MAX. • • • • • Low Collector Saturation Voltage : v CE(sat) = °-5V (Max.) (at Ic = lA)

2sc5029

Contextual Info: TOSHIBA 2SC5029 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5029 U nit in mm POWER SWITCHING APPLICATIONS • Low Saturation Voltage : VCE (sat) = °-5V (Max.) • High Collector Power Dissipation : P 0 = 1.3W (Ta = 25°C)

Contextual Info: TOSHIBA 2SC4604 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATIONS. • SILICON NPN EPITAXIAL TYPE 2SC4604 Unit in mm 5.1 MAX Low Collector-Emitter Saturation Voltage : v CE sat = °-5V (max.) (Ic = 1.5A) High Speed Switching : tstg = 0.5/*s (Typ.)

BU806

Abstract: BU807 CO530
Contextual Info: ÜàMOSPEC FAST SWITCHING DARLINGTON TRANSISTOR NPN They are high voltage,high current devices for fast switching applications. BU806 BU807 FEATURES: * Collector-Emitter Sustaining Voltage 1 5 0 V M i n -BU807 = 200 V (Min.) -BU806 * Low Collector-Emitter Saturation Voltage V C E ( S a t ) = 1-5V (Max.) @ lc = 5.0 A, lB = 50 mA

BVCE0-20V

Contextual Info: MICRO BC368,9 I K ‘ At. 'R. TO-92B BC 368 NPN and BC 369 (PNP) are complementary silicon epitaxial transistors for audio frequency application. ABSOLUTE MAXIMUM RATINGS ECB Collector Current-Continuous 1A CEO 20V Emitter-Base Voltage VEBO 5V Total Power Dissipation

2SA1721

Abstract: 2SC4497
Contextual Info: TO SH IBA 2SC4497 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC4497 Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS + 0.5 2.5-0.3 + 0.25 High Voltage : Vcbq-SOOV, V0e q = 3OOV Low Saturation Voltage : Vq ^ (sat) —0-5V (Max.) Small Collector Output Capacitance

2SA1892

Abstract: 2SC5029
Contextual Info: TO SH IBA 2SC5029 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5029 Unit in mm POWER SWITCHING APPLICATIONS • • • • Low Saturation Voltage • VCE (sat) = °-5V (Max-) High Collector Power Dissipation : Pç; = 1.3W (Ta = 25°C)