2SC5029 Search Results

Contextual Info: T O SH IB A 2SC5029 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5029 U nit in mm POWER SWITCHING APPLICATIONS • Low Saturation Voltage : v CE(sat) = °-5V (Max.) • High Collector Power Dissipation : P q = 1.3W (Ta = 25°C)

Contextual Info: 2SC5029 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC5029 Industrial Applications Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A, IB = 0.05 A) • High collector power dissipation: PC = 1.3 W

C5029

Abstract: 2SA1892 2SC5029
Contextual Info: 2SC5029 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC5029 Industrial Applications Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A, IB = 0.05 A) • High collector power dissipation: PC = 1.3 W

2SA1892

Abstract: 2SC5029
Contextual Info: TO SH IBA 2SC5029 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5029 Unit in mm POWER SWITCHING APPLICATIONS • • • • Low Saturation Voltage • VCE (sat) = °-5V (Max-) High Collector Power Dissipation : Pç; = 1.3W (Ta = 25°C)

C5029

Abstract: 2SA1892 2SC5029
Contextual Info: 2SC5029 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC5029 通 信 工 業 用 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm : VCE (sat) = 0.5 V (最大) 飽和電圧が低い。 (IC = 1 A, IB = 0.05 A)

Contextual Info: 2SC5029 SILICON NPN EPITAXIAL TYPE PCT PROCESS POW ER AMPLIFIER APPLICATIONS. IN D U ST R IA L A P PLIC A T IO N S U n it in mm POW ER SW ITCHING APPLICATIONS. • tm Low Satu ratio n V oltage ; V CE (sat) = 0-5V (M ax.) (Ic = lA ) • H igh Collector Power D issipation : P c = 1.3 W (Ta = 25°C)

2SA1892

Abstract: 2SC5029
Contextual Info: TO SH IBA 2SC5029 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5029 Unit in mm POWER SWITCHING APPLICATIONS • • • • Low Saturation Voltage • VCE (sat) = °-5V (Max-) High Collector Power Dissipation : Pç; = 1.3W (Ta = 25°C)

2sc5029

Contextual Info: TOSHIBA 2SC5029 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5029 U nit in mm POWER SWITCHING APPLICATIONS • Low Saturation Voltage : VCE (sat) = °-5V (Max.) • High Collector Power Dissipation : P 0 = 1.3W (Ta = 25°C)

C5029

Abstract: 2SA1892 2SC5029
Contextual Info: 2SC5029 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC5029 Industrial Applications Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A, IB = 0.05 A) • High collector power dissipation: PC = 1.3 W

2SC5029

Abstract: 2SA1892
Contextual Info: TOSHIBA 2SC5029 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5029 PO W ER AM PLIFIER APPLICATIONS Unit in mm PO W ER SWITCHING APPLICATIONS • Low Saturation Voltage : v CE(sat) = °-5V (Max.) High Collector Power Dissipation : Pç; = 1.3W (Ta = 25°C)

2SA1892

Abstract: 2SC5029
Contextual Info: 2SA1892 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1892 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A, IB = −0.05 A) • High collector power dissipation: PC = 1.3 W

2SA1892

Abstract: 2SC5029
Contextual Info: TO SH IBA 2SA1892 2 S A 1 892 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 8.0 ± 0.2 Low Collector Saturation Voltage : VCE (sat)“ —0.5V (Max.) High Power Dissipation

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PRO CESS INDUSTRIAL APPLICATIONS PO W ER AMPLIFIER APPLICATIONS. PO W ER SW ITCH IN G APPLICATIONS. • • • Low Collector Saturation Voltage : VCE (sat)= —0.5V (M ax .)(Ic= -1 A ) High Speed Switching Time : tst,g= 1.0/iS (Typ.)

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

Contextual Info: TO SHIBA 2SA1892 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 892 PO W ER AM PLIFIER APPLICATIONS U nit in mm PO W ER SWITCHING APPLICATIONS Low Collector Saturation Voltage : V e E ( s a t ) = - ° - 5V (Max.) High Power Dissipation

2SA1892

Abstract: 2SC5029
Contextual Info: 2SA1892 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1892 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 1.3 W

2SA1941 amp circuit

Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

2SA1892

Abstract: 2SC5029 sh03
Contextual Info: TO SH IBA 2SA1892 2 S A 1 892 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 8.0 ± 0.2 Low Collector Saturation Voltage : VCE (sat)“ —0.5V (Max.) High Power Dissipation