2SC4497 Search Results

Contextual Info: SILICON NPN TRIPLE DFFUSED TYPE 2SC4497 Unit in mm +05 25 -0.3 H IG H V O L T A G E CONTROL A P P L I C A T I O N S . • High Voltage: VCBO=300V, VCEO=300V • Low Saturation Voltage: VcE sat =0.5V (Max.) • Small Collector Output Capacitance: MAXIMUM R A T IN G S

Contextual Info: Transistors SMD Type Product specification 2SC4497 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Small collector output capacitance. 0.55 Low saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 High voltage. 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

2SA1721

Abstract: 2SC4497
Contextual Info: 2SC4497 東芝トランジスタ シリコンNPN三重拡散形 PCT方式 2SC4497 ○ 高電圧制御用 ○ プラズマディスプレイ, ニクシー管駆動用 単位: mm • 高耐圧です。 : VCBO = 300 V, VCEO = 300 V • 飽和電圧が小さい。

Contextual Info: 2SC4497 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC4497 High Voltage Control Applications • Unit: mm High voltage: VCBO = 300 V, VCEO = 300 V • Low saturation voltage: VCE (sat) = 0.5 V (max) • Small collector output capacitance: Cob = 3 pF (typ.)

Contextual Info: 2SC4497 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC4497 High Voltage Control Applications • Unit: mm High voltage: VCBO = 300 V, VCEO = 300 V • Low saturation voltage: VCE (sat) = 0.5 V (max) • Small collector output capacitance: Cob = 3 pF (typ.)

2SA1721

Abstract: 2SC4497
Contextual Info: TO SH IBA 2SC4497 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC4497 Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS + 0.5 2.5-0.3 + 0.25 High Voltage : Vcbq-SOOV, V0e q = 3OOV Low Saturation Voltage : Vq ^ (sat) —0-5V (Max.) Small Collector Output Capacitance

2SA1721

Abstract: 2SC4497
Contextual Info: 2SC4497 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC4497 High Voltage Control Applications Unit: mm • High voltage: VCBO = 300 V, VCEO = 300 V · Low saturation voltage: VCE (sat) = 0.5 V (max) · Small collector output capacitance: Cob = 3 pF (typ.)

Contextual Info: 2SC4497 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC4497 High Voltage Control Applications • Unit: mm High voltage: VCBO = 300 V, VCEO = 300 V • Low saturation voltage: VCE (sat) = 0.5 V (max) • Small collector output capacitance: Cob = 3 pF (typ.)

Contextual Info: Reliability Tests Report Product Name: 2SC4497 Package Name: S-Mini 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s

2SC4497

Contextual Info: Transistors SMD Type Silicon NPN Triple Diffused Type 2SC4497 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Small collector output capacitance. 0.55 Low saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 High voltage. 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1

2SA1721

Abstract: 2SC4497
Contextual Info: TO SHIBA 2SC4497 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC4497 Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS + 0.5 High Voltage : V £ b O -300V, V c eo = 300V Low Saturation Voltage : V q ^ (sat)-0-5V (Max.) Small Collector Output Capacitance

Contextual Info: TO SH IB A 2SC4497 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC4497 HIGH VOLTAGE CONTROL APPLICATIONS • • • High Voltage : V c b q =300V , V c e o = 300V Low Saturation Voltage : V q e (sat) = -5V (Max.) Small Collector Output Capacitance

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

Contextual Info: 2SA1721 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1721 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

2SC4496

Abstract: 2SC4477 2SC4494 2sc4503 tx 2G 2sc450 2sc4504 2SC4473 2SC4474 2SC4475
Contextual Info: - 204 Ta=25ti(*EP(àîc=25‘ C M 2SC4473 £ ffi S H # CRT Vid e o Out iÉ VcBO Vceo (V) (V) 120 Ì C(D C ) (A) 1 20 0 .4 Pc Pc* (W) (W) S IcBO (max) (//A) 1.8 10 10 1 le 1 (A) 0.05 Ib (A) 0.005 10 0.01 1 1 0.03 0.003 5 0. 0 0 0 1 5 2 0. 0 0 0 2 0. 0 0 0 0 4

f 4558

Abstract: 4558 fa 4558 2SC4588 4558, 4556 2SD2076 4558 nec 2SC4420 NEC 4559 2SC3425
Contextual Info: - m € Type No. € tt Manuf. 2SC 4548 / 2SC 4549 > H # o m. p B $ B S B 8 2SC 4550 2SC 4551 2SC 4552 H # SANYO *£ M TOSHIBA 2SD127D 2SD1271 2SC3748 2SC3709 2SÜ2151 2SC3710 2SD1964 2SD1947 2SD1271 2SC 4555 = 2SC 4556 1 t'y'T'y 2SC4162 2SC3626 y -ytry 2SC4459