2SA1721 Search Results

Contextual Info: 2SA1721 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1721 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V

2sa1721

Contextual Info: 2SA1721 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1721 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V

Contextual Info: TOSHIBA 2SA1721 SILICON PNP EPITAXIAL TYPE PCT PROCESS U nit in mm HIGH VOLTAGE CONTROL APPLICATIONS. +0.5 2 5 - 0 .3 PLASM A DISPLAY, NIXIE TUBE DRIVER APPLICATIONS. •025 1 .5 - 0.15 CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS. 960 • High V o lta ge: V q b q - —300V, V q e q = —300V

2SA1721

Abstract: 2SC4497
Contextual Info: 2SA1721 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1721 ○ 高電圧制御用 ○ プラズマディスプレイ, ニクシー管駆動用 ○ ブラウン管輝度調整用 単位: mm • 高耐圧です。 : VCBO = −300 V, VCEO = −300 V

2SA1721

Abstract: 2SC4497 A1721
Contextual Info: 2SA1721 TO SH IBA 2 S A 1 721 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS. + 0.5 2 5 - 0.3 + 0.25 1.5 - 0.15 PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS. CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS.

Display Nixie

Abstract: 2SA1721 2SC4497
Contextual Info: 2SA1721 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1721 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V

Contextual Info: 2SA1721 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1721 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V

Contextual Info: 2SA1721 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1721 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V

Contextual Info: T O SH IB A 2SA1721 2 S A 1 721 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS. PLASM A DISPLAY, NIXIE TUBE DRIVER APPLICATIONS. CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS. • • • • High Voltage : VcBO = —300V, VcEO = —300V

A1721

Abstract: nixie tube driver Display Nixie 2SA1721 2SC4497 IC PLASMA tube
Contextual Info: TOSHIBA 2SA1721 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 721 Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS. + 0.5 2 5 - 0.3 PLASM A DISPLAY, NIXIE TUBE DRIVER APPLICATIONS. 1.5 CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS. + 0.25

A1721

Abstract: 2SA1721 2SC4497 17V7 Display Nixie
Contextual Info: 2SA1721 TO SH IB A 2 SA 1721 TO SH IBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH VO LTAG E CO N TRO L APPLICATIONS. PLASM A DISPLAY, NIXIE TUBE DRIVER APPLICATIONS. CATHO D E R A Y TUBE BRIGHTNESS CO N TRO L APPLICATIONS. • •

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

2SA1721

Abstract: 2SC4497
Contextual Info: 2SC4497 東芝トランジスタ シリコンNPN三重拡散形 PCT方式 2SC4497 ○ 高電圧制御用 ○ プラズマディスプレイ, ニクシー管駆動用 単位: mm • 高耐圧です。 : VCBO = 300 V, VCEO = 300 V • 飽和電圧が小さい。

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

Contextual Info: 2SC4497 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC4497 High Voltage Control Applications • Unit: mm High voltage: VCBO = 300 V, VCEO = 300 V • Low saturation voltage: VCE (sat) = 0.5 V (max) • Small collector output capacitance: Cob = 3 pF (typ.)

2SC4496

Abstract: 2SC4477 2SC4494 2sc4503 tx 2G 2sc450 2sc4504 2SC4473 2SC4474 2SC4475
Contextual Info: - 204 Ta=25ti(*EP(àîc=25‘ C M 2SC4473 £ ffi S H # CRT Vid e o Out iÉ VcBO Vceo (V) (V) 120 Ì C(D C ) (A) 1 20 0 .4 Pc Pc* (W) (W) S IcBO (max) (//A) 1.8 10 10 1 le 1 (A) 0.05 Ib (A) 0.005 10 0.01 1 1 0.03 0.003 5 0. 0 0 0 1 5 2 0. 0 0 0 2 0. 0 0 0 0 4

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *