SN74ACT16245DL
Abstract: act16245 texas cmos SN74ACT16245D EN-4088Z SN74HC00N SN74HC42D TEXAS INSTRUMENTS, Mold Compound TS-095 cmos testing abstract
Contextual Info: TEXAS INSTRUMENTS Notification of Wafer Thickness Reduction from 15 and 13 Mils to 11 Mils December 5, 1996 Abstract Texas Instruments Advanced System Logic is reducing wafer thickness from 15 and 13 mils to 11 mils for all CMOS and BiCMOS technologies in all Wafer Fabrication Sites producing these
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hc00nact16245dlabt245adbsn74act16245dl+9act16245texas cmossn74act16245den-4088zsn74hc00nsn74hc42dtexas instruments, mold compoundts-095cmos testing abstract
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rom radiation
Abstract: 80c32e 80C52 80C52E 80c52 basic 40Krad
Contextual Info: Evaluation Report Radiation Tolerance of the 80C32E/80C52E by Thierry CORBIERE Abstract The radiation tolerant version of the 8-bit micro controller 80C32E/80C52E has been tested against the two major concerns of the outer space environment, total dose and heavy ions.
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80c32e/80c52e30krad30mhz80c32e+580c52erom radiation80c5280c52 basic40krad
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80C32E
Abstract: 73E-08 80C52E 80C52 rom radiation 0.8um cmos 87E-08
Contextual Info: SCMOS1 SCMOS1 Technology 80C32E/80C52E Microcontrollers – Tolerance to Radiation Abstract The radiation tolerant version of the 8–bit micro controller 80C32E/80C52E has been tested against the two major concerns of the outer space environment, total dose and heavy ions. 30Krad Si , 30MHz and latch–up
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80c32e/80c52e30krad30mhz80c32e+680c52e73e-0880c52rom radiation0.8um cmos87e-08
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tl 4013
Abstract: 54ACT373 54ACT174 NS-28 watson smith 54AC163 54AC299 AN-989 AT22V10B C1995
Contextual Info: National Semiconductor Application Note 989 M Maher R Koga et al The Aerospace Corp April 1995 ABSTRACT A comparison of single event upset and latchup test results for devices operated at several bias levels from 2 5V to 6V is reported Vulnerability to SEU increased with decreasing
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20-3atl 401354act37354act174+7ns-28watson smith54ac16354ac299an-989at22v10bc1995
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MCT-2000
Abstract: 54AC161 54AC14 hughes radiation transistor SMD para inverter 54AC245 AN-927 C1995 aero transceiver K100L
Contextual Info: National Semiconductor Application Note 927 Michael Maher October 1994 ABSTRACT This paper examines the impact of using an Advanced CMOS product in a low voltage 3 3 VDC application which is subjected to a total ionizing dose environment Results from this investigation(1) demonstrate a significant
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mct-200054ac16154ac14hughes radiation+6transistor smd para inverter54ac245an-927c1995aero transceiverk100l
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krad
Abstract: 67025E TM1019 RAM SEU
Contextual Info: DPR SCMOS2 Technology Dual Port RAM 8K16 Tolerance to Radiation Abstract This paper proposes a review of the data gathered during radiation testing for the 8Kx16 dual port RAM manufactured using the Radiation Tolerant version of the 0.6µm SCMOS2/2 technology. Both Upset sensitivity
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8kx1650krad10krad35krad+6nt940559849/92/nlkrad67025etm1019ram seu
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8Kx16
Abstract: TM1019
Contextual Info: Evaluation Report SCMOS2 Radiation Tolerant Technology Dual Port RAM 8Kx16 Tolerance to Radiation by Thierry CORBIERE 1 Work partially funded by French Space Agency [1] Abstract This paper proposes a review of the data gathered during radiation testing for the 8Kx16 dual port
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Dose
Abstract: TM1019 Single Supply Operation cross SCC22900
Contextual Info: SCMOS1/2 SCMOS1/2 Technology FIFO Family up to 72Kbit – Tolerance to Radiation 1. Abstract This paper proposes a review of the data gathered during heavy ion testing for the First In First Out RAM manufactured using the Radiation Tolerant version of the
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72kbit50krad35kradehr95056+69849/92/nl11marsdosetm1019single supply operation crossscc22900
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35CL
Abstract: TM1019 79br
Contextual Info: Evaluation Report SCMOS1/2 Radiation Tolerant Technology FIFO Family up to 72Kbit Tolerance to Radiation by Thierry CORBIERE (1) Work partially funded by French Space Agency [1] Abstract This paper proposes a review of the data gathered during heavy ion testing for the First In First Out
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60Co
Contextual Info: Intersil White Paper Specialty Products Space and Defense Wafer by Wafer Low Dose Rate Acceptance Testing in a Production Environment Abstract—This White Paper describes technical details of a wafer by wafer low dose rate acceptance testing program being implemented for all Intersil radiation hardened products. We
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74x244
Abstract: 74xxx240 74XXX244 617 connector 74xx*240 AN-737
Contextual Info: Fairchild Application Note 737 James W. Davison February 1998 ABSTRACT In recent years the speed and drive capability of advanced digital integrated circuitry has increased significantly. However, along with the advantages of increased speed and drive has come the consequence of greater device generated noise. Noise is an important consideration when designing systems with todays advanced logic circuits. Device
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74x244
Abstract: AN-737 AN-640 AN-680 74XXX244 wy 15D
Contextual Info: Fairchild Semiconductor Application Note November 1990 Revised June 2001 Device Generated Noise Measurement Techniques Abstract In recent years the speed and drive capability of advanced digital integrated circuitry has increased significantly. However, along with the advantages of increased speed and
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74x244
Abstract: 74XXX240 AN-640 AN-680 AN-737 C1995 P6201 74XXX244 AN64 AN-680 national
Contextual Info: National Semiconductor Application Note 737 James W Davison January 1991 ABSTRACT In recent years the speed and drive capability of advanced digital integrated circuitry has increased significantly However along with the advantages of increased speed and drive has come the consequence of greater device generated noise Noise is an important consideration when designing systems with todays advanced logic circuits Device
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Dose
Abstract: transistor study Marconi radiation hard
Contextual Info: Investigations of Dose Rate Effects on CMOS Submicronic Technologies Thierry CORBIERE 1 – Jean Louis VENTURIN(2) MATRA MHS, Nantes France (2) CNES, Toulouse France (1) Abstract Majority of the TOTAL DOSE evaluations of MOS devices are made by using Cobalt 60 sources at dose rates
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74AHC1G32DBV
Abstract: 74AHC1G00 74AHC1G04 SN74AHC1G00 SN74AHC1G08 SN74AHC1G32 SN74AHCT1G00 SN74AHCT1G08 SN74AHCT1G32 AHCT 125
Contextual Info: TEXAS INSTRUMENTS Informational Notification for Several AHC/AHCT Devices, Die Revision ‘C’ April 24, 1998 Abstract Texas Instruments has qualified several AHC/AHCT devices, die revision ‘C’ for the new DCK package. Die revision ‘C’ is a product redesign that includes a die shrink to fit the new
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transistor MN1
Abstract: NAND Qualification Reliability HC00D SN74HC00 texas instruments lot trace code EN-4088Z HC00 HCT00 SN74HCT00 S01-06800
Contextual Info: TEXAS INSTRUMENTS Qualification Notification for the SN74HC00 and SN74HCT00, Die Revision K August 20, 1997 Abstract Texas Instruments qualified the SN74HC00 and SN74HCT00 die revision K, to replace the SN74HC00 die revision F and the SN74HCT00 die revision G. Die revision K is a product
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sn74hc00sn74hct00s01-06800transistor mn1+6nand qualification reliabilityhc00dtexas instruments lot trace codeen-4088zhc00hct00
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54ALS374
Abstract: 54HCT374 54AC00 seu boron rods 54AC04 seu 54AC374 p-channel mosfet 9240 54AC00 54ALS374/BRAJC 54AC04
Contextual Info: National Semiconductor Application Note 925 M C Maher January 1994 ABSTRACT Radiation test data is presented for different radiation environment as performed on National Semiconductor’s FACTTM Advanced CMOS microcircuit family Over twenty device types have been evaluated by independent investigators users and by National
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74AHCT04
Abstract: 74AHCT241 74HCT241 J1850 TMS470 CMOS to TTL logic level shifters 3.3v to 5v interface components cmos open collector
Contextual Info: Application Report SPNA087 3.3 Volt Microprocessors in an Industrial Environment Jim Childers TMS470 Microcontroller Abstract As new generations of microcontrollers lower their supply voltages from 5 volts to 3.3 volts and beyond, issues with interfacing and noise are increasing. This appnote presents cost-effective
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spna087tms470scad001c74ahct04+674ahct24174hct241j1850cmos to ttl logic level shifters3.3v to 5v interface componentscmos open collector
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SZZA036B
Abstract: cd4000 SCAA035 LVC16374 cd4000 logic devices SN54LVTH16646 SN74AHCT16541 SN74LVCC3245 SN74LVCC4245 JEP103A
Contextual Info: Application Report SZZA036B - May 2003 Understanding and Interpreting Standard-Logic Data Sheets Stephen M. Nolan and Jose M. Soltero Standard Linear & Logic ABSTRACT Texas Instruments TI standard-logic products data sheets include descriptions of functionality and electrical specifications for the devices. Each specification includes
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szza036bcd4000scaa035lvc16374+6cd4000 logic devicessn54lvth16646sn74ahct16541sn74lvcc3245sn74lvcc4245jep103a
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EPIC-1S
Abstract: 74ACT245 EN-4088Z SN74ACT245N EN4088Z
Contextual Info: TEXAS INSTRUMENTS Notification for the Addition of CMOS Process to the Sherman Wafer Fabrication Site November 26, 1996 Abstract Texas Instrument’s Sherman Wafer Fabrication Facility has qualified the EPIC-1S CMOS process. The HC, AC, ACT, LV, AHCT and AHC product families are produced from this process and may be
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SN74ALVC16425
Abstract: SN74ALVC164245A SN74ALVC164245 SN74LVC4245A SN74LVCC3245A SN74LVCC4245A
Contextual Info: Application Report SCEA021A - September 2002 Texas Instruments Voltage-Level-Translation Devices Nadira Sultana and Chris Cockrill Standard Linear & Logic ABSTRACT In electronic systems design, there is a need to provide an interface between different voltage
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DAC121S101WGRQV
Abstract: Micro Linear cross DAC121S101 DAC121S101QML LM124 F-1192 DAC121S101QMLV output impedance calculation in LM124 JESD57
Contextual Info: Single Event Transient Response Dependence on Operating Conditions for a Digital to Analog Converter Kirby Kruckmeyer, Member, IEEE, James S. Prater, Bill Brown and Sandeepan DasGupta Abstract—The Single Event Effect SEE characterization of a Digital to Analog Converter (DAC) showed an unexpected Single
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dac121s101wgrqvmicro linear crossdac121s101dac121s101qml+5lm124f-1192dac121s101qmlvoutput impedance calculation in lm124jesd57
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SN74ALVC16425
Abstract: SCEA021 SN74ALVC4245 SN74ALVC4245A SN74LVCC3245A SN74ALVC164245 SN74LVC4245A SN74LVCC4245A
Contextual Info: Application Report SCEA021 - February 2001 Texas Instruments Voltage-Level-Translation Devices Nadira Sultana and Chris Cockrill Standard Linear & Logic ABSTRACT In electronic systems design, there is a need to provide an interface between different voltage
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AUC Family
Abstract: SN74AUC16245 SN74AUC245 SN74AUCH245 SCEA033
Contextual Info: Application Report SCEA033 - April 2003 Designing With TI Ultra-Low-Voltage CMOS AUC Octals and Widebus Devices Sagir Hasnain, Gene Hinterscher, and Will Hutchinson Standard Linear & Logic ABSTRACT System designers are continuously seeking ways to improve signal integrity, increase speed,
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