memoire
Abstract: RAM EDAC SEU 350Krad
Contextual Info: 0.6µm CMOS TECHNOLOGY WITH RADIATION TOLERANT FEATURES APPLICATION TO 8Kx16 DUAL PORT RAM and SEA of GATES TECHNOLOGIE CMOS 0.6µm TOLERANTE AUX RADIATIONS APPLICATION A LA MEMOIRE DOUBLE ACCES 8Kx16 ET AUX MERS DE PORTES by Thierry CORBIERE, Valerie LASSERE, Bruno THOMAS, Saïd HACHAD 1
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rom radiation
Abstract: 80c32e 80C52 80C52E 80c52 basic 40Krad
Contextual Info: Evaluation Report Radiation Tolerance of the 80C32E/80C52E by Thierry CORBIERE Abstract The radiation tolerant version of the 8-bit micro controller 80C32E/80C52E has been tested against the two major concerns of the outer space environment, total dose and heavy ions.
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80c32e/80c52e30krad30mhz80c32e+580c52erom radiation80c5280c52 basic40krad
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krad
Abstract: 67025E TM1019 RAM SEU
Contextual Info: DPR SCMOS2 Technology Dual Port RAM 8K16 Tolerance to Radiation Abstract This paper proposes a review of the data gathered during radiation testing for the 8Kx16 dual port RAM manufactured using the Radiation Tolerant version of the 0.6µm SCMOS2/2 technology. Both Upset sensitivity
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8kx1650krad10krad35krad+6nt940559849/92/nlkrad67025etm1019ram seu
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80C32E
Abstract: 73E-08 80C52E 80C52 rom radiation 0.8um cmos 87E-08
Contextual Info: SCMOS1 SCMOS1 Technology 80C32E/80C52E Microcontrollers – Tolerance to Radiation Abstract The radiation tolerant version of the 8–bit micro controller 80C32E/80C52E has been tested against the two major concerns of the outer space environment, total dose and heavy ions. 30Krad Si , 30MHz and latch–up
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80c32e/80c52e30krad30mhz80c32e+680c52e73e-0880c52rom radiation0.8um cmos87e-08
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45420
Abstract: SN10 TM1019 SRAM Cross References RAM SEU
Contextual Info: SCMOS2 SCMOS2 Technology MG1RT Sea of Gates Family – Tolerance to Radiation 1. Abstract This paper proposes a review of the data gathered during radiation testing for the MG1RT sea of gates family manufactured using the Radiation Tolerant version of the
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nt940559849/92/nl45420sn10+3tm1019sram cross referencesram seu
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VLSI Technology
Abstract: "vlsi technology" abstract "vlsi technology" abstract for 35CL inverter grade SCR solar 4V led RADEC
Contextual Info: Hardening a CMOS Technology Against Total Dose and Heavy Ion Induced Latch–up by Thierry CORBIERE, Valerie LASSERE, Bruno THOMAS, Said HACHAD 1 Robert ECOFFET(2), Sophie DUZELLIER(3) (1) MATRA MHS, NANTES (F) (2) CNES, TOULOUSE (F) (3) CERT/DERTS, TOULOUSE (F)
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vlsi technologyvlsi technology" abstractvlsi technology" abstract for35cl+3inverter grade scrsolar 4v ledradec
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Dose
Abstract: transistor study Marconi radiation hard
Contextual Info: Investigations of Dose Rate Effects on CMOS Submicronic Technologies Thierry CORBIERE 1 – Jean Louis VENTURIN(2) MATRA MHS, Nantes France (2) CNES, Toulouse France (1) Abstract Majority of the TOTAL DOSE evaluations of MOS devices are made by using Cobalt 60 sources at dose rates
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300kraddosetransistor studymarconi radiation hard |
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"vlsi technology" abstract for
Abstract: "vlsi technology" abstract
Contextual Info: Hardening CMOS Hardening a CMOS Technology Against Total Dose and Heavy Ion Induced Latch–up by Thierry CORBIERE, Valerie LASSERE, Bruno THOMAS, Said HACHAD 1 Robert ECOFFET(2), Sophie DUZELLIER(3) (1) MATRA MHS, NANTES (F) (2) CNES, TOULOUSE (F) (3) CERT/DERTS, TOULOUSE (F)
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vlsi technology" abstract forvlsi technology" abstract |
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metal detector plans
Abstract: "electromagnetic pulse" DMILL van allen belt satellite neutron detector nuclear CMOS Process 3um signal path designer
Contextual Info: Introduction Higher performance, speed, power consumption and cost are key words designers have to keep in mind to succeed in a fast changing and competitive world wide market. But, before they finally accomplish their dream, their desires often turn into nightmares. This is mostly because new generation components are using very aggressive
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metal detector planselectromagnetic pulsedmillvan allen belt satellite+4neutron detectornuclearcmos process 3umsignal path designer
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EHR96135
Abstract: 100KRAD TM1019 EHR96
Contextual Info: Evaluation Report SCMOS2 Radiation Tolerant Technology MG1RT Sea of Gates Family - Tolerance to Radiation by Thierry CORBIERE 1 Work partially funded by French Space Agency [1] Abstract This paper proposes a review of the data gathered during radiation testing for the MG1RT sea of gates
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Marconi radiation hard
Abstract: hm65656 transistor study
Contextual Info: Dose Rate Effects Investigations of Dose Rate Effects on CMOS Submicronic Technologies Thierry CORBIERE 1 – Jean Louis VENTURIN(2) MATRA MHS, Nantes France (2) CNES, Toulouse France (1) Abstract Majority of the TOTAL DOSE evaluations of MOS devices are made by using Cobalt 60 sources at dose rates
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300kradmarconi radiation hardhm65656transistor study |
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radiation-hardened EEPROM
Abstract: 79C0408-120 79C0408-150 79C0408-175 79C0408-200 79C0408RP
Contextual Info: SPACE ELECTRONICS INC. 4 MEGABIT EEPROM MCM 512K X 8-BIT S PACE PRODUCTS VCC 1 40 79C0408 VCC CE3 CE2 CE4 VSS VSS R/B A15 A16 RES A14 WE WE A12 A13 OE A7 A8 A6 A5 SEi 79C0408RP A9 A3 A10 A2 VCC A1 I/O7 A0 I/O6 I/O0 I/O5 I/O1 I/O4 I/O2 VSS CE 4 R/B A 0-16 128K x 8
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van allen belt
Abstract: Temic date array signal path designer TEMIC DATABOOK
Contextual Info: Radiation TEMIC Radiation Policy Introduction Higher performance, speed, power consumption and cost are key words designers have to keep in mind to succeed in a fast changing and competitive world wide market. But, before they finally accomplish their dream, their
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10mradvan allen belttemic date arraysignal path designer+1temic databook
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18V04
Abstract: XQ18V04VQ44N 18V00
Contextual Info: QPRO XQ18V04 XQR18V04 QML In-System Programmable Configuration PROMs R DS082 (v1.0) May 1, 2001 5 Advance Product Specification Features Description • Xilinx introduces the QPro XQ18V04 and XQR18V04 series of in-system programmable and radiation hardenned
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xq18v04xqr18v04ds08218v04+2xq18v04vq44n18v00
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EQXO-3050BM
Abstract: eqxo-2050 20.0000mhz EQXO-1100 EQXO-1000BMH EQXO-1000BM MIL-O-55310C OM025 ok24000a 60.0000mhz
Contextual Info: EURO QUARTZ EQXO-1000BM SERIES OSCILLATORS 14 pin Dual-in-Line MIL SPECIFICATION FEATURES Page 1 of 2 OUTLINE & DIMENSIONS Ceramic substrate and ruggedized mounts for high reliability Industry-standard 14 pin DIL package for ease of design Full screening to MIL-O-55310C, Class B available
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736e-02
Abstract: cross reference 4533 UT7Q512
Contextual Info: UTMC Application Note A Radiation Tolerant 4M SRAM for Space Applications Abstract Total ionizing dose and heavy ion single event effects data are presented for a radiation tolerant 100ns 4M SRAM UT7Q512 . The SRAM is shown to be resistant to between 20 and 35krad(Si) of total dose radiation (depending on the particular lot examined) at a relatively high dose rate of 46rad(Si)/s. The SRAM is
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100nsut7q51235krad46rad+7128mev-cm10-year88-inchns-30ns-29736e-02cross reference 4533
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EQXO-1100BM
Abstract: Euro Quartz crystal oscillator 1050bm OM02 MIL-O-55310C 1050bm 40.0000MHz EQXO-1000BM ok01 O-M03
Contextual Info: EURO QUARTZ EQXO-1000BM and 3000BM OSCILLATORS 14 pin Dual-in-Line MIL SPECIFICATION FEATURES • Page 1 of 2 OUTLINE & DIMENSIONS Ceramic substrate and ruggedized mounts for high reliability Industry-standard 14 pin DIL package, 4 pin or 14 pin Full screening to MIL-O-55310C, Class B available
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Dose
Abstract: TM1019 Single Supply Operation cross SCC22900
Contextual Info: SCMOS1/2 SCMOS1/2 Technology FIFO Family up to 72Kbit – Tolerance to Radiation 1. Abstract This paper proposes a review of the data gathered during heavy ion testing for the First In First Out RAM manufactured using the Radiation Tolerant version of the
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72kbit50krad35kradehr95056+69849/92/nl11marsdosetm1019single supply operation crossscc22900
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35CL
Abstract: TM1019 79br
Contextual Info: Evaluation Report SCMOS1/2 Radiation Tolerant Technology FIFO Family up to 72Kbit Tolerance to Radiation by Thierry CORBIERE (1) Work partially funded by French Space Agency [1] Abstract This paper proposes a review of the data gathered during heavy ion testing for the First In First Out
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8Kx16
Abstract: TM1019
Contextual Info: Evaluation Report SCMOS2 Radiation Tolerant Technology Dual Port RAM 8Kx16 Tolerance to Radiation by Thierry CORBIERE 1 Work partially funded by French Space Agency [1] Abstract This paper proposes a review of the data gathered during radiation testing for the 8Kx16 dual port
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EQXO-2050BMH
Abstract: EQXO-2100BM 240000MHz 20.0000mhz EQXO-2050BM 14.7456MHz crystal 20.0000M WK08 MIL-O-55310C WK-120
Contextual Info: EURO QUARTZ EQXO-2000BM SERIES OSCILLATORS 8 pin Dual-in-Line MIL SPECIFICATION Page 1 of 2 FEATURES Ceramic substrate and ruggedized mounts for high reliability Industry-standard 8 pin DIL package for ease of design Full screening to MIL-O-55310C, Class B available
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EQXO-1100BM
Abstract: MIL-O-55310C EQXO1100 EQXO-1050BM
Contextual Info: EURO QUARTZ EQXO-1000BM and 3000BM OSCILLATORS 30kHz to 70MHz 14 pin Dual-in-Line MIL SPECIFICATION Page 1 of 2 FEATURES • Ceramic substrate and ruggedized mounts for high reliability Industry-standard 14 pin DIL package, 4 pin or 14 pin Screening to MIL-O-55310C, Class B available
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