72KBIT Search Results

Dose

Abstract: TM1019 Single Supply Operation cross SCC22900
Contextual Info: SCMOS1/2 SCMOS1/2 Technology FIFO Family up to 72Kbit – Tolerance to Radiation 1. Abstract This paper proposes a review of the data gathered during heavy ion testing for the First In First Out RAM manufactured using the Radiation Tolerant version of the

35CL

Abstract: TM1019 79br
Contextual Info: Evaluation Report SCMOS1/2 Radiation Tolerant Technology FIFO Family up to 72Kbit Tolerance to Radiation by Thierry CORBIERE (1) Work partially funded by French Space Agency [1] Abstract This paper proposes a review of the data gathered during heavy ion testing for the First In First Out

Contextual Info: PRELIMINARY IDT7034S/L HIGH-SPEED 4 K x 18 DUAL-PORT STATIC RAM F ea tu re s: using the Master/Slave select when cascading more than True Dual-Ported memory cells which allow simultaneous * one d evic e_ reads of the same memory location High-speed access

Contextual Info: •ft«»»* PRELIMINARY IDT7034S/L HIGH-SPEED 4 K x 18 DUAL-PORT STATIC RAM «««»5 *K ««:«! ^*SS»:S? •*»> ~ •«¿j F ea tu re s: * * True D ual-Ported m em ory cells which allow sim ultaneous using the M aster/Slave select w hen cascading m ore than

Contextual Info: fax id: 5205 C Y 7 C 145 ”• ■ ■ ¿¡¡P: C Y 7 C 144 CYPRESS 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features True Dual-Ported memory cells which allow sim ultaneous reads of the same m em ory location 8K x 8 organization CY7C144 8K x 9 organization (CY7C145)

Contextual Info: October 1989 Edition 1.0 . FUJITSU DATASHEET MB81C79B-35/-45 CMOS 72K-BIT HIGH-SPEED SRAM 8K Words x 9 Bits High-Speed CMOS Static Random Access Memory with Automatic Power Down The Fujitsu MB81C79B is a 8,192 words x 9 bits static random access memory

S1L50552

Abstract: tcon mini-lvds EPSON tcon S1X65263 tcon 17 epson s1k500 SMART ASIC 197 S1K60000 S1L50062 UXGA tcon
Contextual Info: ASICs Gate Arrays / Embedded Arrays / Standard Cells 2010 Our goal in the Epson Semiconductor Operations Division is to be a true partner for you, by looking to give you an edge in product development through our concept of "+less design". Gate Arrays / Embedded Arrays / Standard Cells

CT2R

Abstract: square wave generator by 8051 7673a lcd interface with 8051 algorithm Am79C410 8051 keypad matrix to18 package 4*4 matrix keypad 8051 diode a15a AM27LV020-300JC
Contextual Info: MRR i l i - '993 P R E LIM IN A R Y Advanced Micro Devices A m 7 9 C 4 1 0 CT2 PhoX TM Controller for Digital Cordless Telephones DISTINCTIVE CHARACTERISTICS • Perform s all protocol, d ata form atting, audio p rocessing, and peripheral functions fo r CAI

MB81C79

Abstract: mb81c79b-35
Contextual Info: October 1989 Edition 1.0 — FUJITSU D A TA S H EE T , MB81C79B-35/-45 CMOS 72K-BIT HIGH-SPEED SRAM 8K Words x 9 Bits High-Speed CMOS Static Random Access Memory with Automatic Power Down The Fujitsu MB81C79B is a 8,192 words x 9 bits static random accasa memory

1I604

Contextual Info: r n r FU J I T S U LTD T\ • S3E » - 37 HT? 5 b 0 0 D S 3 7 S OTÓ « F C A J - ^ - 2 3 ' IX. M a rc h 1991 Edition 2.0 FUJITSU DATA SHEET MB82B79-17/-20 72K-BIT HIGH SPEED BI-CMOS SRAM 8192-WORD x 9-BIT BI-CMOS HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82B79 is a 8,192 words by 9 bits static random access memory

IDT7034

Abstract: IDT7034S truth table for 7 inputs OR gate
Contextual Info: IDT7034S/L HIGH-SPEED 4K x 18 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • High-speed access — Commercial: 15/20ns max. • Low-power operation

s1l50552

Abstract: encounter conformal equivalence check user guide circuit diagram of mini ips system S1L50062 RTC SL 5500 S1K-7 S1X65263 512M x 8 Bit NAND Flash Memory BGA and QFP Package epson lq 300
Contextual Info: ASIC Gate Array / Embedded Array / Standard Cell 2007/4- SEIKO EPSON CORPORATION Our goal is to be a true partner that strategically contributes to your product development through our concept of "saving technologies" that save power, time, and space. Gate Array / Embedded Array / Standard Cell

AK7730AVT

Abstract: AK7730A AK6510C AK6512C MPX16 93 ab AK6512
Contextual Info: [ASAHI KASEI] [AK7730A] AK7730A 24bit 2ch ADC+ Audio DSP 1. General Description The AK7730A is a highly integrated audio processing IC, including a stereo 24-bit input A/D and on-chip DSP. High quality analog performance is provided by a stereo A/D with 97dB 48 kHz dynamic range. This A/D

Contextual Info: April 1990 Edition 3.0 FUJITSU DATA SHEET : MB8279RT-20/-25 CMOS 72K-BIT HIGH-SPEED SRAM 8K Words x 9 Bits Synchronous CMOS Static Random Access Memory with Automatic Power Down The Fujitsu MB8279RT is a 8,192 words x 9 bits static random access memory fabricated with a CMOS silicon gate process.

sem 2005

Abstract: SEM 2005 16 PINS A12L CY7C144 CY7C145
Contextual Info: CY7C144 CY7C1458K x 8/9 Dual-Port Static RAM with SEM, INT, BUSY CY7C144 CY7C145 8K x 8/9 Dual-Port Static RAM with SEM, INT, BUSY Features • True Dual-Ported memory cells that allow simultaneous reads of the same memory location • 8K x 8 organization CY7C144

STB4395

Abstract: STB4395A TQFP64 of multilayer pcb RF Transceiver 800mhz
Contextual Info: STB4395 CT2 RECEIVER/TRANSMITTER . . . . . . . ADVANCE DATA FULLY INTEGRATED DOUBLE SUPERHETERODYNE RECEIVER OPERATION FROM 800MHz TO 1000MHz RECEIVER OUTPUT AS BITSTREAM FULLY INTEGRATED TRANSMITTER TRANSMITTER INPUT I/Q/REFIQ OR I/I, Q/Q INTEGRATED POWER AMPLIFIER

Contextual Info: •ft«»»* PRELIMINARY IDT7034S/L HIGH-SPEED 4 K x 18 DUAL-PORT STATIC RAM «««»5 *K ««:«! ^*SS»:S? •*»> ~ •«¿j F ea tu re s: * * True Dual-Ported memory cells which allow simultaneous using the Master/Slave select when cascading more than

C144

Abstract: A12L CY7C144 CY7C145 68-LEAD arbitration scheme
Contextual Info: 44 CY7C145 CY7C144 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 8K x 8 organization CY7C144 • 8K x 9 organization (CY7C145) • 0.65-micron CMOS for optimum speed/power

rgb to ntsc

Abstract: B110-H7264-X-X-7600 RGB switch
Contextual Info: s Product Brief SDA 9388X Single-Chip Picture in Picture IC The SDA 9388X integrates analog clamping, ADC, DAC, RGB switch and digital signal processing (decimation, memory, output signal processing etc.) on a single silicon. SDA Potential Application The SDA 9388X is a cost-effective

C144

Abstract: transistor c144 C144* datasheet C144-21 C1446 C1448 C144 sa C144 transistor C144 transistor datasheet C1447
Contextual Info: fax id: 5205 1CY 7C14 4 CY7C145 CY7C144 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 8K x 8 organization CY7C144 • 8K x 9 organization (CY7C145)

IDT7034

Abstract: IDT7034S
Contextual Info: IDT7034S/L HIGH-SPEED 4K x 18 DUAL-PORT STATIC RAM Features: ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial: 15/20ns max. – Industrial: 20ns (max.) Low-power operation

ARM1136J-S

Abstract: ELDEC TOSHIBA TC160 ARM1136J TOSHIBA cmos image 1995 tc190c CMOS GATE ARRAYs toshiba TC190G TC280 Celaro
Contextual Info: 2007-3 PRODUCT GUIDE CMOS ASICs To ensure competitiveness in the marketplace, you will need to produce more sophisticated, more technology-intensive and higher value-added products, using a process of technological innovation and systematic marketing. Toshiba's application-specific

Contextual Info: FUJITSU MICROELECTRONICS 23E D 37417b2 0007=143 b • T -M t-z v iz . F U JIT S U September 1988 Edition 1.0 72K-BIT 8192x9 HIGH SPEED CMOS STATIC RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu M B 81C 79A -W Is 8 1 9 2 w ords x 9 b its static random access m em ory

Contextual Info: FUJITSU MICROELECTRONICS 47E D • 374T7b2 fi ■Fill May 1990 Edition 1.0 MB82B79-1S/-20 72K-BIT HIGH-SPEED BiCMOS SRAM 8K Words x 9 Bits High-Speed CMOS Static Random Access Memory The Fujitsu MB82B79 is a 8,192 words x 9 bits static random access memory fabricated