RADEC Search Results

sensitivity of ldr

Abstract: MIL-STD-883G MILSTD-883G specification of ldr 3 pins LDR LM 3171 LM119 TM1019 LM119xRLQMLV LM111
Contextual Info: 1 RADECS 2009 Proceedings – [DW-1] Low Dose Rate Test Results of National Semiconductor’s ELDRS-free Bipolar Comparators LM111 and LM119 Kirby Kruckmeyer, Member, IEEE, Larry McGee, Bill Brown and Linda Miller Abstract—Many bipolar comparators have been shown to

chemi-con date code 7m138

Abstract: MIL-PRF-39018 36DX112F450CD2A 7M138 D 2578 equivalent Defense Electronics Supply Center 567 36DX142F350BF2A 36DX222F450DF2A MIL-STD-1285 BB 36 931
Contextual Info: REVISIONS LTR A DATE 92/07/14 APPROVED D. Moore B DESCRIPTION Added capacitance 1,100 µF at 350 V dc. Editorial changes throughout. Editorial changes throughout. 11 Dec 00 K. Cottongim C Editorial changes throughout. 6 June 06 Michael Radecki CURRENT DESIGN ACTIVITY CAGE CODE 037Z3

memoire

Abstract: RAM EDAC SEU 350Krad
Contextual Info: 0.6µm CMOS TECHNOLOGY WITH RADIATION TOLERANT FEATURES APPLICATION TO 8Kx16 DUAL PORT RAM and SEA of GATES TECHNOLOGIE CMOS 0.6µm TOLERANTE AUX RADIATIONS APPLICATION A LA MEMOIRE DOUBLE ACCES 8Kx16 ET AUX MERS DE PORTES by Thierry CORBIERE, Valerie LASSERE, Bruno THOMAS, Saïd HACHAD 1

ADC08D1000DEV

Abstract: AD677 WAVEVISION4 ADC08D1000WG-QV XC4VLX15 JESD57 for lvds ADC hard radiation
Contextual Info: The material is posted here with permission of the IEEE. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained fron the IEEE by writing to pubs-permissions.org.

DE-AC04-94AL85000

Abstract: analog devices lm139 LM111 LM139 compendium of recent total ionizing dose
Contextual Info: Total Dose Hardening of a Bipolar Voltage Comparator R.L. Pease, RLP Research, Inc., Albuquerque, NM 87122 M. C. Maher, National Semiconductor, South Portland, ME, 04106 M. Savage, P. Baker, J. Krieg, and T. Turflinger, NAVSEA Crane, Crane, IN 47522 M. Shaneyfelt, Sandia Labs, Albuquerque, NM 87185

relay 8 pin dayton

Abstract: MIL-PRF-39016 03ln8 Dayton relays MIL-STD-1285 a-a55485 MAVCD-5419-5 relay 11 pin dayton QPL-39016 39016
Contextual Info: REVISIONS LTR DESCRIPTION A Delete paragraph 1.1 and 1.2 in their entirety and substitute new paragraph 1.1 as printed on page 2. Renumber paragraph 1.3 to 1.2. 8 May 85 S. Searcy B Change vendor similar part numbers. 7 Mar 86 S. Searcy C Increase acceleration to 75 g's. Add new

Contextual Info: Events Terabit Networking Xilinx Announces Terabit Networking Forum Industry leaders to discuss next generation system interconnect technologies that meet the network demands of the terabit revolution. by Ron DiGiuseppe System Interfaces Product Marketing Manager, Xilinx

RAD6000

Abstract: NA-GSFC-2005-04 HCN58C1001 EEPROM retention testing EEPROM retention bake screening GSFC SCS750 RAD6000 processor architecture 79LV0408RPFE-20 28C011TRPFS-12
Contextual Info: Review of GSFC NASA Advisory NA-GSFC-2005-04 Part Types: Models: Manufacturer: EEPROM All EEPROM Models Maxwell Technologies Lot Date Codes: All LDC’s Document: 1009322 Revision: Date: 2 March 24, 2006 | Maxwell Technologies | 9244 Balboa Avenue, San Diego, CA 92123, United States |

60Co

Contextual Info: Intersil White Paper Specialty Products Space and Defense Wafer by Wafer Low Dose Rate Acceptance Testing in a Production Environment Abstract—This White Paper describes technical details of a wafer by wafer low dose rate acceptance testing program being implemented for all Intersil radiation hardened products. We

SFME28-461

Abstract: 14933 QML-38534 FME28-461 SFME28-461Z
Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED A Corrected power dissipation rating 20 Oct 1995 Andrew R. Ernst B Added case outlines T, U, Y, Z C Added device type 02. Editorial changes. Added tab dimensions to package end on case outlines T, Y, and Z. 25 Apr ‘02

LM95A

Abstract: transistor a1020 Actel A1020 ACTEL A1010 Actel a1280 LM95 A1020 transistor actel a1020b ACTEL A1280A RT14100
Contextual Info: RADIATION PERFORMANCE OF ACTEL PRODUCTS J.J. Wang Technology Development Actel Corporation 408-522-4576 jih-jong.wang@actel.com Rev7 November 8, 2000 1 I. TOTAL IONIZING DOSE (TID) PERFORMANCE Table I list the TID data of Actel products published in the open domain. Also included is the availability of each product.

VLSI Technology

Abstract: "vlsi technology" abstract "vlsi technology" abstract for 35CL inverter grade SCR solar 4V led RADEC
Contextual Info: Hardening a CMOS Technology Against Total Dose and Heavy Ion Induced Latch–up by Thierry CORBIERE, Valerie LASSERE, Bruno THOMAS, Said HACHAD 1 Robert ECOFFET(2), Sophie DUZELLIER(3) (1) MATRA MHS, NANTES (F) (2) CNES, TOULOUSE (F) (3) CERT/DERTS, TOULOUSE (F)

MIL-PRF-38534

Abstract: MIL-PRF-55310 MIL-PRF-883 MIL-STD-790 MIL-STD-883 PRESSURE 38534 MIL-STD-883, Method 2023
Contextual Info: ENGINEERING PRACTICE STUDY Crystal Oscillator Testing: A comparison between MIL-PRF-55310 Oscillator,Crystal Controlled and MIL-PRF-38534 (Hybrid Microcircuits). FINAL REPORT 13 NOVEMBER 2008 PROJECT NUMBER: 5955-2009-002 Study conducted by: William E. Sindelar, Electronics Component Team, DSCC-VAT

"vlsi technology" abstract for

Abstract: "vlsi technology" abstract
Contextual Info: Hardening CMOS Hardening a CMOS Technology Against Total Dose and Heavy Ion Induced Latch–up by Thierry CORBIERE, Valerie LASSERE, Bruno THOMAS, Said HACHAD 1 Robert ECOFFET(2), Sophie DUZELLIER(3) (1) MATRA MHS, NANTES (F) (2) CNES, TOULOUSE (F) (3) CERT/DERTS, TOULOUSE (F)

Contextual Info: Speedster22i Macro Cell Library UG021 v1.5 – Mar 29, 2013 www.achronix.com Copyright Info Copyright 2006–2013 Achronix Semiconductor Corporation. All rights reserved. Achronix and Speedster are trademarks of Achronix Semiconductor Corporation. All other trademarks

C2220E105K5

Abstract: C2220E105K3 Robert C2220E 500S47W105 250S47W105K 2221E105KU vat package marking code
Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED A Added suggested source of supply. Added 1 µF at 25 V dc, .065 T maximum. Editorial changes throughout. 16 May 94 D. Moore B Page 4 – Revised inspection of product for delivery requirements. 23 May 96 Andrew R. Ernst

AD677

Abstract: ADC08D1000WG-QV folding-ADC ADC08D1000DEV EPI LVDS XC4VLX15 preset resistor testing method ADC digital calibration time interleaved
Contextual Info: This material is posted here with permission of the IEEE. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistributionmust be obtained from the IEEE by writing to pubs-permissions@ieee.org.

spice MODEL FOR LM119

Abstract: HS-139RH SPICE model lm139 PM139S pmi PM139 "window comparator" lm139 LM119 PJ 41 MG cmos cots radiation SN103
Contextual Info: Laser-Induced and Heavy Ion-Induced Single Event Transient SET Sensitivity Measurements on LM139 Comparators Stephen D. LaLumondiere1 , Rocky Koga 2 , Michael C. Maher3 , and Steven C. Moss1 , 1. Electronics and Photonics Laboratory 2. Space Sciences Applications Laboratory

93027

Abstract: MIL-DTL-31000 93026 60024 60027 transistor 60024 Y1410 RAYCO ELECTRONICS vanguard 60001
Contextual Info: REVISIONS LT A B C DESCRIPTION DATE Add Source of Supply 23 February 1998 Changes in accordance with NOR 5950-R001-98. Added an additional Source of Supply. Change Source of Supply Address. Update drawing to current format and update referenced documents.

MIL-PRF-39014

Abstract: SPA11X104KHA M/MIL-PRF-39014/05
Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED A Added suggested source of supply. 10 Jan 90 David E. Moore B Deleted suggested source of supply. 29 Jun 90 David E. Moore C Deleted and added suggested sources of supply. Modified 3.1.2 and figure 1. Added note for

shockley diode

Abstract: ccd sensor star tracker shockley diode application diode shockley sun tracking sensors photodiodes shockley diode datasheet Laser power supply abstract Alcatel Microelectronics image sensor star tracker shockley
Contextual Info: Total Dose Effects on CMOS Active Pixel Sensors J. Bogaerts, B. Dierickx Imec, Kapeldreef 75, 3001 Leuven, Belgium ABSTRACT Co60 irradiations have been carried out on test structures for the development of CMOS Active Pixel Sensors APS that can be used in a radiation environment. The basic mechanisms that may cause failure are presented. Ionization induced damage