10KRAD Search Results

5962-08230

Abstract: a 1458 smd AN1458 IC UA 1458 ISL7457 ISL7457SRH
Contextual Info: Extending the TID Capability of the ISL7457SRH Application Note March 17, 2009 AN1458.0 ISL7457SRH TID Rating R1 The ISL7457SRH is specified for 10krads Si minimum TID in SMD 5962-08230 when continuously biased as shown in Figure 1. In many cases a 10krad(Si) TID rating is not adequate to

jm3851030402bca

Abstract: JM38510 5962-9305501MCC 5962-8958602GA JD55115BEA JD54F08BCA JM54AC373BRA 5962-8762201ea 5962-8757203CA 7800802CA
Contextual Info: NATIONAL SEMICONDUCTOR STANDARD MICROCIRCUIT DRAWING CROSS REFERENCE JULY, 1998 Part Numbering Guides Jan Product: JM38510 / 119 05 B P A MIL-M-38510 Basic Specification Lead Finish A = Solder, C = Gold "/" = Standard, D = 10krad RHA & R = 100krad RHA designation

512K32

Abstract: 9Q512K32 UT9Q512 UT9Q512K32
Contextual Info: Standard Products UT9Q512K32 16Megabit SRAM MCM Advanced Data Sheet January 15, 2001 FEATURES q 35ns maximum 5 volt supply address access time q Asynchronous operation for compatible with industry standard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

Contextual Info: Standard Products QCOTSTM UT7Q512 512K x 8 SRAM Advanced Data Sheet June 12, 2000 FEATURES q 100ns 5 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

Contextual Info: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Data Sheet January 21, 2002 FEATURES q 25ns maximum 3.3 volt supply address access time q MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows operation as 8, 16, 24, or 32-bit data width

Contextual Info: Standard Products QCOTSTM UT8Q512 512K x 8 SRAM Data Sheet August, 2002 FEATURES q 25ns 3.3 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

Contextual Info: Standard Products QCOTSTM UT9Q512K32 16Megabit SRAM MCM Advanced Data Sheet August 6, 2001 FEATURES q 35ns maximum 5 volt supply address access time q Asynchronous operation for compatible with industry standard 512K x 8 SRAMs q TTL compatible inputs and output levels , three-state

Contextual Info: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Preliminary Data Sheet June 20, 2001 FEATURES q 35ns maximum 3.3 volt supply address access time q MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows

Contextual Info: Standard Products QCOTSTM UT8Q512K32 16Megabit SRAM MCM Advanced Data Sheet December 17, 2001 FEATURES q 25ns maximum 3.3 volt supply address access time q MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows

UT9Q512K32

Contextual Info: Standard Products UT9Q512K32E 16 Megabit RadTolerant SRAM MCM Data Sheet June 28, 2011 INTRODUCTION The UT9Q512K32E RadTol product is a high-performance 2M byte 16Mbit CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs with a

Contextual Info: Standard Products QCOTSTM UT9Q512K32 16Megabit SRAM MCM Data Sheet January 21, 2002 FEATURES q 25ns maximum 5 volt supply address access time q Asynchronous operation for compatible with industry standard 512K x 8 SRAMs q TTL compatible inputs and output levels , three-state

Contextual Info: Standard Products QCOTSTM UT8Q1024K8 SRAM Data Sheet June, 2002 FEATURES q 25ns maximum 3.3 volt supply address access time q Dual cavity package contains two (2) 512K x 8 industrystandard asynchronous SRAMs; the control architecture allows operation as an 8-bit data width

Contextual Info: Standard Products UT7Q512 512K x 8 SRAM Advanced Data Sheet June 12, 2000 FEATURES q 100ns 5 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

UT9Q512K32E

Contextual Info: NOTE: This product has been replaced with UT9Q512K32E. Please use the UT9Q512K32E for NEW designs. See the April 2007 customer letter at www.aeroflex.com/QCOTS for the improvements and differences. Standard Products QCOTSTM UT9Q512K32 16Megabit SRAM MCM Data Sheet

Contextual Info: Standard Products QCOTSTM UT8Q1024K8 SRAM Preliminary Data Sheet August 27, 2001 INTRODUCTION The QCOTS TM UT8Q1024K8 Quantified Commercial Off-theShelf product is a high-performance 1M byte 8Mbit CMOS static RAM built with two individual 524,288 x 8 bit SRAMs

Contextual Info: Standard Products QCOTSTM UT8Q512 512K x 8 SRAM Preliminary Data Sheet November 21, 2001 FEATURES q 25ns 3.3 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

Contextual Info: Standard Products UT9Q512K32E 16 Megabit RadTolerant SRAM MCM Preliminary Data Sheet February 29, 2008 INTRODUCTION The UT9Q512K32E RadTolerant product is a high-performance 2M byte 16Mbit CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs

RH1084

Abstract: transistor BC 247
Contextual Info: RH1084 5A Low Dropout Positive Adjustable Regulator U W W W U DESCRIPTIO ABSOLUTE The RH1084 positive adjustable regulator is designed to provide 5A with higher efficiency than currently available devices. All internal circuitry is designed to operate down

Contextual Info: Lin fiA R . TECHNOLOGY _ RH1078M Micropower, Dual, Single Supply Precision Op Amp DCSCRIPTIOn r b s o iu t c The RH1078M is a micropower dual op amp in the standard 8-pin configuration. This device is optimized for single supply operation at 5V. Specifications for ± 1 5V are

1E14

Abstract: 2E12 FRS244D FRS244H FRS244R Rad Hard in Fairchild for MOSFET
Contextual Info: FRS244D, FRS244R, FRS244H 9A, 250V, 0.415 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 9A, 250V, RDS on = 0.415Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FRM234D FRM234H FRM234R equivalent components of transistor 772
Contextual Info: FRM234D, FRM234R, FRM234H 7A, 250V, 0.70 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Title RM2 D, M2 R, M2 H bt A, 0V, m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, , 0V, m, d rd, Package • 7A, 250V, RDS on) = 0.70Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

1E14

Abstract: 2E12 FRM230D FRM230H FRM230R Rad Hard in Fairchild for MOSFET
Contextual Info: FRM230D, FRM230R, FRM230H 8A, 200V, 0.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 8A, 200V, RDS on = 0.50Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

RH1021-10

Abstract: RH1021BM-10 RH1021CM-10
Contextual Info: RH1021-10 Precision 10V Reference U W W W U DESCRIPTION ABSOLUTE MAXIMUM RATINGS The RH1021-10 is a precision 10V reference with ultralow drift and noise, extremely good long-term stability and almost total immunity to input voltage variations. The reference output will source and sink up to 10mA. This

FRF9250R

Abstract: 1E14 2E12 FRF9250D FRF9250H Rad Hard in Fairchild for MOSFET
Contextual Info: FRF9250D, FRF9250R, FRF9250H 14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 14A, -200V, RDS on = 0.315Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot