UT7Q512 Search Results

Contextual Info: Standard Products QCOTSTM UT7Q512 512K x 8 SRAM Advanced Data Sheet June 12, 2000 FEATURES q 100ns 5 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

Contextual Info: Standard Products UT7Q512 512K x 8 SRAM Advanced Data Sheet June 30, 1999 FEATURES q 100ns 5 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

Contextual Info: Standard Products QCOTSTM UT7Q512 512K x 8 SRAM Preliminary Data Sheet November 21, 2000 FEATURES q 100ns 5 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

Contextual Info: Standard Products UT7Q512 512K x 8 SRAM Advanced Data Sheet June 12, 2000 FEATURES q 100ns 5 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

UT7Q512

Contextual Info: Standard Products QCOTSTM UT7Q512 512K x 8 SRAM Data Sheet January 21, 2002 FEATURES q 100ns 5 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

5A6 smd

Contextual Info: Standard Products UT7Q512 512K X 8 SRAM Advanced Data Sheet U T F ebraary 16, 1999 H6iQ£liltl9: K ÌS • ÏIT i: i l « INTRODUCTION FEATURES □ 100ns 5 volt supply m axim um address access tim e □ A synchronous operation for com patibility w ith industrystandard 512K x 8 SRA M s

Contextual Info: Standard Products QCOTSTM UT7Q512 512K x 8 SRAM Data Sheet August 19, 2004 INTRODUCTION FEATURES ̌ 100ns 5 volt supply maximum address access time ̌ Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs ̌ TTL compatible inputs and output levels, three-state

Contextual Info: Standard Products UT7Q512 512K x 8 SRAM Advanced Data Sheet July 30, 1999 FEATURES q 100ns 5 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

UT7Q512

Abstract: TEF-R_1
Contextual Info: Standard Products QCOTSTM UT7Q512 512K x 8 SRAM Data Sheet August, 2002 FEATURES q 100ns 5 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

Contextual Info: Standard Products QCOTSTM UT7Q512 512K x 8 SRAM Data Sheet August 19, 2004 INTRODUCTION FEATURES ‰ 100ns 5 volt supply maximum address access time ‰ Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs ‰ TTL compatible inputs and output levels, three-state

Contextual Info: Standard Products UT7Q512 512K x 8 SRAM Advanced Data Sheet September 1, 1999 FEATURES 100ns 5 volt supply maximum address access time Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs TTL compatible inputs and output levels, three-state

Contextual Info: Standard Products UT7Q512 512K x 8 SRAM Advanced Data Sheet February 7, 2000 FEATURES q 100ns 5 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

Contextual Info: Standard Products QCOTSTM UT7Q512 512K x 8 SRAM Preliminary Data Sheet August 6, 2000 FEATURES q 100ns 5 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

736e-02

Abstract: cross reference 4533 UT7Q512
Contextual Info: UTMC Application Note A Radiation Tolerant 4M SRAM for Space Applications Abstract Total ionizing dose and heavy ion single event effects data are presented for a radiation tolerant 100ns 4M SRAM UT7Q512 . The SRAM is shown to be resistant to between 20 and 35krad(Si) of total dose radiation (depending on the particular lot examined) at a relatively high dose rate of 46rad(Si)/s. The SRAM is

512k x 8 chip block diagram

Abstract: "rad" sram 16mbit
Contextual Info: Standard Products UT7Q512K32 16Megabit SRAM MCM Preliminary Data Sheet July 17, 2000 FEATURES q 110ns 5 volt supply maximum address access time q MCM contains four (4) 512K x 8 industry-standard asynchronous SRAMs; the control architecture allows operation as 8, 16, 24, or 32-bit data width

UT7Q512

Contextual Info: Standard Products QCOTSTM UT7Q512 512K x 8 SRAM Data Sheet April, 2002 FEATURES q 100ns 5 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

UT7Q512

Contextual Info: Standard Products QCOTSTM UT7Q512 512K x 8 SRAM Data Sheet August 19, 2004 INTRODUCTION FEATURES ‰ 100ns 5 volt supply maximum address access time ‰ Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs ‰ TTL compatible inputs and output levels, three-state

Contextual Info: Standard Products QCOTSTM UT7Q512 512K x 8 SRAM Preliminary Data Sheet December 17, 2001 FEATURES q 100ns 5 volt supply maximum address access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q TTL compatible inputs and output levels, three-state

Contextual Info: Standard Products QCOTSTM UT7Q512 512K x 8 SRAM Data Sheet August, 2002 INTRODUCTION FEATURES ‰ 100ns 5 volt supply maximum address access time ‰ Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs ‰ TTL compatible inputs and output levels, three-state

UT7Q512

Contextual Info: Standard Products QCOTSTM UT7Q512 512K x 8 SRAM Data Sheet August, 2002 INTRODUCTION FEATURES ‰ 100ns 5 volt supply maximum address access time ‰ Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs ‰ TTL compatible inputs and output levels, three-state

ARINC 629 sim

Abstract: m38510/55501 AMP ARINC-629 SIM MT72038 smd cmos 4435 CQFP 240 arinc 629 controller P2X smd CERAMIC PIN GRID ARRAY CPGA lead frame arinc 629
Contextual Info: The Microelectronic Specialists Product SHORT FORM January 2001 AEROFLEX UTMC UT69151 SµMMIT DXE • UT69151 SµMMIT™ XTE ■ UT69151 SµMMIT™ RTE ■ 1760 ■ ■ ■ ■ ■ ■ ■ ■ 84,132 84 1.0E6* Q,V 5962-92118 ■ ■ ■ ■ ■ ■ ■

JORDAN

Abstract: UT8Q512 SRAM flatpack SRAM TTL UT7Q512 UT9Q512 UTXQ512
Contextual Info: UTXQ512 SRAM Product Overview Anthony Jordan Standard Product Line Manager UTMC Microelectronic Systems 719-594-8252, jordan@utmc.aeroflex.com www.utmc.com Updated January 2000 UTXQ512 SRAM • 4Mbit density – Organized 512K x 8 – 100ns X=7 and 25ns (X=8 or X=9) access time, asynchronous

aeroflex antifuse programming method screen

Abstract: MANUALS EPITAXIAL 8XC196KC Users manual CM 1241 rs 422 485 pinout USART 8251 interfacing with RS-232 temperature controller CHB 402 manual
Contextual Info: Standard Products UT131 Embedded Controller Card User Manual II February 2002 Aeroflex UTMC’s UT131 Embedded Controller Card ECC is ideal for applications requiring the conversion of analog signals into digital representations. Typical applications include: power system control and monitoring, sensor data

UT8SDMQ64M48

Abstract: UT8SDMQ64M40 mev smd diode UT8Q512E UT8R128K32 5962-04 SDRAM UT8SDMQ64M48 die 5962-0422 "rad" sram UT8ER512K32
Contextual Info: Aeroflex Colorado Springs A passion for performance. Over 20 years experience in HiRel memories 50 to 300 krads Si 4.0 Mbit to 3.0 Gbit options Best-in-class bit density per square inch Flight proven HiRel Memories V SM D# Q& QM L Fla tpa ck Lat ch Me -Up I