CIRCUIT TIP2955 Search Results

STP4119

Abstract: Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a
Contextual Info: ON Semiconductor Master Components Selector Guide Power Management, Amplifiers and Comparators, Analog Switches, Thyristors, Diodes, Rectifiers, Bipolar Transistors, FETs, Circuit Protection, Clock and Data Management, Interface, and Standard Logic Devices

2N5686 motorola

Abstract: 2N5685 equivalent BU108 MJ15024 MJ15025 AUDIO AMPLIFIER 2N5686 2SA49 2SC140 2N5685 MJ1000 NSP2100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5684 High-Current Complementary Silicon Power Transistors NPN 2N5685 2N5686* . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability — IC Continuous = 50 Amperes.

MJ14003 equivalent

Abstract: BU108 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ14002* PNP MJ14001 MJ14003* High-Current Complementary Silicon Power Transistors . . . designed for use in high–power amplifier and switching circuit applications, • High Current Capability — IC Continuous = 60 Amperes

2SA70

Abstract: BU108 2SA1046 2SC7 c 3198 transistor BU806 Complement BDX54 tip142 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6379* High-Power PNP Silicon Transistors *Motorola Preferred Device 50 AMPERE POWER TRANSISTORS PNP SILICON 80, 100, 120 VOLTS 250 WATTS . . . designed for use in industrial–military power amplifier and switching circuit

BU108

Abstract: BC337 circuit example BC337 rbe BDX54 replacement transistor BC337 BU326 BU100 MOTOROLA 2N3773
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU522B High Voltage Silicon Power Darlingtons 7 AMPERES DARLINGTON POWER TRANSISTORS NPN SILICON 450 VOLTS 75 WATTS Power Transistor mainly intended for use as ignition circuit output transistor. • Specified minimum sustaining voltage:

R3381

Abstract: R3498 R3381-S a101 transistor BDW85-S buv49 transistor 1015 TIPL763 TIC263D 883 transistor
Contextual Info: CIRCUIT PROTECTION PRODUCTS February, 2006 Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team SOT-93 Packaged Power Transistor & Thyristor Product Change Notification PCN Tracking Number BLBF40 - Mold Compound Change

r3381

Abstract: R3498 buv49 MP150s tipl763 TIC263M transistor BD245 BDW85-S buv48s BD250C-S
Contextual Info: CIRCUIT PROTECTION PRODUCTS February, 2006 Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team SOT-93 Packaged Power Transistor & Thyristor Product Change Notification PCN Tracking Number BLBF40 - Mold Compound Change

2sc1943 circuit diagram

Abstract: TIP42C DIAGRAM pin diagram mje13003 TRANSISTOR tip41c schematic diagram BD139 transistor circuit diagram TIP31 NPN Transistor diagram 2N3055 4D 2N3055 TO-218 Package BU108 tip122 tip127 audio amp schematic
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is specifically designed for unclamped,

2SC124

Abstract: BU108 2SA1046 BDX54 2SC102 BC 458 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6436 2N6437 2N6438* High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO sus = 80 Vdc (Min) — 2N6436

equivalent to tip162

Abstract: 2SA1046 2N3055 BU108 2n6258 BU326 BU100 BD262 buv23 2n5632
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors 2N6338 2N6339 2N6340 2N6341* . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) — 2N6338

2SA1046

Abstract: 2N6275 equivalent BU108 TR TIP2955 MOTOROLA 2N6277 BU806 Complement BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO sus = 100 Vdc (Min) — 2N6274 VCEO(sus) = 120 Vdc (Min) — 2N6275

MJE340-MJE350

Abstract: 2SD71 2sc106 BD139.6 BU108 2SC1419 BD139.16 BD139.10 mj3055a MJ1000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJE270 PNP MJE271 Complementary Silicon Power Transistors . . . designed specifically for use with the MC3419 Solid–State Subscriber Loop Interface Circuit SLIC . • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A — TO–126

TIP3055 NPN power transistor

Abstract: equivalent transistor TIP3055 TIP2955 NPN power transistor transistor TIP3055 SOT-93 TIP2955 TIP3055
Contextual Info: TIP3055 NPN SILICON POWER TRANSISTOR ● Designed for Complementary Use with the TIP2955 Series ● 90 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available SOT-93 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.

C 1972 transistor

Abstract: transistor PNP TIP2955 equivalent transistor TIP2955 circuit tip2955 TIP2955 TIP3055
Contextual Info: TIP2955 PNP SILICON POWER TRANSISTOR ● Designed for Complementary Use with the TIP3055 Series ● 90 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available SOT-93 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.

C 1972 transistor

Abstract: TIP2955 TIP3055 transistor TIP3055 transistor PNP TIP2955
Contextual Info: TIP2955 PNP SILICON POWER TRANSISTOR Copyright 1997, Power Innovations Limited, UK ● Designed for Complementary Use with the TIP3055 Series ● 90 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available

power transistor tip3055

Abstract: TIP3055 TIP2955 TIP3055 NPN power transistor
Contextual Info: TIP3055 NPN SILICON POWER TRANSISTOR Copyright 1997, Power Innovations Limited, UK ● Designed for Complementary Use with the TIP2955 Series ● 90 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available

C 1972 transistor

Abstract: transistor PNP TIP2955 TIP2955 TIP3055 transistor TIP3055 SOT-93 circuit tip2955
Contextual Info: TIP2955 PNP SILICON POWER TRANSISTOR Copyright 1997, Power Innovations Limited, UK ● JANUARY 1972 - REVISED MARCH 1997 Designed for Complementary Use with the TIP3055 Series ● 90 W at 25°C Case Temperature ● 15 A Continuous Collector Current ●

C 1972 transistor

Abstract: TIP2955
Contextual Info: TIP2955 PNP SILICON POWER TRANSISTOR C o p y rig h t 1997, Power Innovations Limited, UK • JANUARY 1972 - REVISED MARCH 1997 Designed for Complementary Use with the TIP3055 Series • 90 W at 25°C Case Temperature • 15 A Continuous Collector Current

NPN, Si, POWER TRANSISTOR, PLASTIC

Contextual Info: TIP3055 NPN SILICON POWER TRANSISTOR C o p y rig h t 1997, Power Innovations Limited, UK • DECEM BER 1970 - REVISED MARCH 1997 Designed for Complementary Use with the TIP2955 Series • 90 W at 25°C Case Temperature • 15 A Continuous Collector Current

DA 2688

Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688
Contextual Info: TEXAS r ÌNSTR 8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 3 DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T emperature 15 A Continuous Collector Current Plastic-Case Version of 2N 3055

transistor sc 1972

Abstract: TIP3055 TIP2955 NPN power transistor TIP2955 transistor PNP TIP2955 texas instruments tip3055
Contextual Info: TIP2955 PNP SILICON POWER TRANSISTOR _ JA N U A R Y 1972 • R E V IS E D M AY 1995 • Designed for Complementary Use with the T1P3055 Series • 90 W at 25°C Case Temperature • 15 A Continuous Collector Current SOT-93 PAC KAG E

Contextual Info: D E V E LO P M E N T D A TA TIP2955T This data shaet contains advance information and specifications are subject to change w ithout notice. J V SILICON EPITAXIAL-BASE POWER TRANSISTOR P-N-P transistor in a plastic envelope. With its n-p-n complement TIP3055T they are primarily intended

transistor TIP3055

Contextual Info: TIP3055 _ y v . SILICON POWER TRANSISTOR N-P-N epitaxial-base power transistor in a plastic SOT-93 envelope for use in audio output stages and general amplifier and switching applications. P-N-P complement is TIP2955.

Contextual Info: TIP2955 _ A SILICON POWER TRANSISTOR P-N-P epitaxial-base power transistor in a plastic SOT-93 envelope, for use in audio output stages and general amplifier and switching applications. N-P-N complement is TIP3055. Q U IC K R E F E R E N C E D A T A