CELLULARRAM Search Results

Contextual Info: S98WS256PD0-003 Stacked Multi-chip Product MCP 256 Mbit (16 M x 16-Bit) 1.8 V Burst Mode Flash Memory 128 Mb (8M x 16-Bit) 1.8 V CellularRAM Type 2, Burst Mode Data Sheet S98WS256PD0-003 Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

HYE18P16161AC

Contextual Info: Data Sheet, V2.2, July 2004 HYE18P16161AC-70/L70 HYE18P16161AC-85/L85 16M Asynchronous/Page CellularRAM CellularRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2004-7-12 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany

MT45W4MW16PCGA

Contextual Info: 64Mb: 4 Meg x 16 Async/Page CellularRAM 1.0 Features Async/Page CellularRAM 1.0 MT45W4MW16PCGA Features Figure 1: • Single device supports asynchronous and page operations • VCC, VCCQ voltages: – 1.7–1.95V VCC – 1.V–3.3V VCCQ • Random access time: 70ns

15X16

Contextual Info: A/D MUX Part Numbering System FM C XX XX X X - X XX X X Fidelix Memory Product Family Temperature C : 0℃~70℃ S : -10℃~60℃ 70℃ E : -25℃~85℃ I : -40℃~85℃ C : A/D MUX Device Depth 08 : 8M 16 : 16M 32 : 32M 64 : 64M 12 : 128M Data Width / CellularRAM Version

Contextual Info: Preliminary‡ 4Mb: 256K x 16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAM 1.0 Memory MT45W256KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 70ns • VCC, VCCQ voltages – 1.7–1.95V VCC

962n

Contextual Info: 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W2MW16BAFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ • Random Access Time: 70ns

MT45W2MW16PFA-70 WT

Abstract: PX300 PW204 pw306 PW203 PW303
Contextual Info: PRELIMINARY‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE CellularRAM MEMORY ASYNCHRONOUS CellularRAMTM MT45W4MW16PFA MT45W4MV16PFA MT45W4ML16PFA MT45W2MW16PFA MT45W2MV16PFA MT45W2ML16PFA For the latest data sheet, please refer to Micron’s Web site: www.micron.com/datasheets

cr1 5 p26z

Contextual Info: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7V–1.95V VCC – 1.7V–3.3V1 VCCQ

Contextual Info: P26Z 128Mb Burst CellularRAM 1.5 Addendum Features 128Mb Burst CellularRAM 1.5 Memory Addendum MT45W8MW16BGX Features Options • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages 1.7V–1.95V VCC 1.7V–1.95V VCCQ • Random access time: 85ns

Contextual Info: PRELIMINARY‡ 256Mb MULTIBANK BURST FLASH 32Mb/64Mb BURST CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C256532W18T MT28C256564W18T Low Voltage, Wireless Temperature Features Figure 1: 88-Ball FBGA Stacked die Combo package • Includes two 128Mb Flash devices

S29WS128N

Abstract: S29WS256N S71WS128NB0 S71WS128NC0 S71WS256NC0 S71WS256ND0 S71WS512N S71WS-N marking YJ AM
Contextual Info: S71WS-N Stacked Multi-Chip Product MCP 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with CellularRAM S71WS-N Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion

Contextual Info: 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages

88-ball

Contextual Info: PRELIMINARY‡ 256Mb MULTIBANK BURST FLASH 32Mb/64Mb BURST CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C256532W18T MT28C256564W18T Low Voltage, Wireless Temperature Features Figure 1: 88-Ball FBGA Stacked die Combo package • Includes two 128Mb Flash devices

BCR100

Contextual Info: 70 128Mb/64Mb Async/Page/Burst CellularRAM 1.5 Memory Figure 1: Features • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–1.95V VCCQ • Random access time: 70ns • Burst mode READ and WRITE access:

marking code micron label

Contextual Info: 128Mb MULTIBANK ASYNC/PAGE OR BURST FLASH 16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM FLASH AND CellularRAM COMBO MEMORY MT28C128516W18/W30D ADVANCE‡‡ MT28C128532W18/W30D MT28C128564W18/W30D Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA

MT28C256

Contextual Info: PRELIMINARY‡ 256Mb MULTIBANK ASYNC/PAGE OR BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C256532W18D MT28C256564W18D Low Voltage, Wireless Temperature Features Figure 1: 88-Ball FBGA Stacked die Combo package

FY632

Abstract: FW625
Contextual Info: ADVANCE‡ 128Mb MULTIBANK BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C128532W18D MT28C128564W18D Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA • Stacked die Combo package Includes two 64Mb Flash devices

Contextual Info: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM PRELIMINARY Distinctive Characteristics MCP Features „ „ Power supply voltage of 1.7 to 1.95V

s98ws512

Abstract: S71WS256PD0HF3SR s98ws256 s71ws256pd0hf3s S71WS256PD
Contextual Info: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA December 20, 2007 Obsolescence Notification No: Subject: 2685 Obsolescence of the CellularRAM Type 3, 64M and 128M pSRAM Multi-Chip Packages MCPs products listed below Spansion LLC is announcing the obsolescence CellularRAM type 3, 64M and 128M pSRAM, and all

Contextual Info: Preliminary‡ 8Mb: 512K x 16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAM 1.0 Memory MT45W512KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 70ns • VCC, VCCQ voltages – 1.7–1.95V VCC

IS66WVD2M16DALL

Abstract: CellularRAM 66WVD2M16DALL
Contextual Info: IS66WVD2M16DALL 32Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD2M16DALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst

IS66WVC2M16DALL

Abstract: CellularRAM 66WVC2M16DALL
Contextual Info: IS66WVC2M16DALL 32Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC2M16DALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several

MT45W4MW16B

Abstract: MT45W1MW16BP23Z MT45W4MW
Contextual Info: TN-45-24: Fixed-Latency Operation in CellularRAM 1.0 Devices Introduction Technical Note Fixed-Latency Operation in CellularRAM 1.0 Devices Introduction This technical note details how Micron has enhanced CellularRAM CR1.0 functionality to include fixed-latency operation. Fixed latency operation is not officially supported by

P25A

Abstract: MT45W4MW16PCGA TN4508 mt45w4mw16pfa
Contextual Info: TN-45-08: 64Mb Async/Page CellularRAM Transition Guide Introduction Technical Note 64Mb Async/Page CellularRAM Transition Guide Introduction The Micron 64Mb family of PSRAM and CellularRAM™ devices—which have async/ page, async/page/burst and burst A/D MUX interfaces—have undergone a design