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Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages	Original	mt45w2mw16bgb 16-word 09005aef82832fa2 09005aef82832f5f	PDF
A192 Abstract: P24Z Contextual Info: 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages	Original	mt45w2mw16bgb 16-word 09005aef82832fa2/source 09005aef82832f5f +2a192 p24z	PDF
Contextual Info: 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages	Original	mt45w2mw16bgb 16-word 09005aef82832fa2 09005aef82832f5f	PDF
psram Contextual Info: Preliminary‡ 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages	Original	mt45w2mw16bgb 16-word 09005aef82832fa2 09005aef82832f5f +1psram	PDF
P24Z Abstract: MT45W2MW16BGB SMD MARKING CODE h5 Contextual Info: 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages	Original	mt45w2mw16bgb 16-word 09005aef82832fa2 09005aef82832f5f +2p24z smd marking code h5	PDF