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    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Preliminary‡ 4Mb: 256K x 16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAM 1.0 Memory MT45W256KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 70ns • VCC, VCCQ voltages – 1.7–1.95V VCC


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    mt45w256kw16pega16-word48-ball09005aef8329b746/source+109005aef82f264aa PDF

    Contextual Info: Preliminary‡ 8Mb: 512K x 16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAM 1.0 Memory MT45W512KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 70ns • VCC, VCCQ voltages – 1.7–1.95V VCC


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    mt45w512kw16pega16-word48-ball09005aef82f264f6/source+109005aef82f264aa PDF

    tbw 70.18

    Abstract: MT45V256KW16PEGA
    Contextual Info: 4Mb: 3.0V Core Async/Page PSRAM Memory 256K x 16 Features 3.0V Core Async/Page PSRAM Memory MT45V256KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 55ns and 70ns • VCC, VCCQ voltages – 2.7–3.6V VCC – 2.7–3.6V VCCQ


    Original
    mt45v256kw16pega16-word48-ball09005aef832450a3/source+209005aef82f264aatbw 70.18 PDF

    Contextual Info: Preliminary‡ 4Mb: 256K x 16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAM 1.0 Memory MT45W256KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 70ns • VCC, VCCQ voltages – 1.7–1.95V VCC


    Original
    mt45w256kw16pega16-word48-ball09005aef8329b746/source+109005aef82f264aa PDF

    Contextual Info: 4Mb: 256K x16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAM 1.0 Memory MT45W256KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 70ns • VCC, VCCQ voltages – 1.7–1.95V VCC – 1.7–3.6V1 VCCQ


    Original
    mt45w256kw16pega16-word09005aef8329b74609005aef82f264aa PDF

    Diode smd f6

    Abstract: smd diode marking a6 smd transistor marking A5 48 ball VFBGA marking E5 micron sram smd diode MARKING F6 SMD MARKING CODE h5 transistor smd marking CR
    Contextual Info: 8Mb: 512K x16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAM 1.0 Memory MT45W512KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 70ns • VCC, VCCQ voltages – 1.7–1.95V VCC – 1.7–3.6V1 VCCQ


    Original
    mt45w512kw16pega16-word09005aef82f264f609005aef82f264aa+9diode smd f6smd diode marking a6smd transistor marking a548 ball vfbgamarking e5micron sramsmd diode marking f6smd marking code h5transistor smd marking cr PDF

    MT45V512KW16PEGA-55WT

    Contextual Info: 8Mb: 3.0V Core Async/Page PSRAM Memory 512K x 16 Features 3.0V Core Async/Page PSRAM Memory MT45V512KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 55ns and 70ns • VCC, VCCQ voltages – 2.7–3.6V VCC – 2.7–3.6V VCCQ


    Original
    mt45v512kw16pega16-word48-ball09005aef82f264f6/source+209005aef82f264aamt45v512kw16pega-55wt PDF