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Contextual Info: Preliminary‡ 8Mb: 512K x 16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAM 1.0 Memory MT45W512KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 70ns • VCC, VCCQ voltages – 1.7–1.95V VCC

Diode smd f6

Abstract: smd diode marking a6 smd transistor marking A5 48 ball VFBGA marking E5 micron sram smd diode MARKING F6 SMD MARKING CODE h5 transistor smd marking CR
Contextual Info: 8Mb: 512K x16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAM 1.0 Memory MT45W512KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 70ns • VCC, VCCQ voltages – 1.7–1.95V VCC – 1.7–3.6V1 VCCQ

MT45V512KW16PEGA-55WT

Contextual Info: 8Mb: 3.0V Core Async/Page PSRAM Memory 512K x 16 Features 3.0V Core Async/Page PSRAM Memory MT45V512KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 55ns and 70ns • VCC, VCCQ voltages – 2.7–3.6V VCC – 2.7–3.6V VCCQ