CE AMPLIFIER Search Results

Contextual Info: MITSUBISHI<Dig.Ana.lNTERFACE> M62393P/FP 8-BIT 8CH I2 :-BUS D-A CONVERTER WITH BUFFER AMPLIFIERS DESCRIPTION PIN CONFIGURATION TOP VIEW □j 20 j CSO SCL ce CS1 SDA Œ IX CE HE CH □l cn [W o cn > R Ao6 <o The M62393 is an integrated circuit semiconductor of

KTA1268

Abstract: NF05 kta1268 transistor
Contextual Info: K EC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1268 EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • Low Noise. : NF=3dB Typ. , Rg=100ß, V Ce=-6V , Ic=-100juA, f=lkHz : NF=0.5dB(Typ.), Rg=lk&, V Ce=-6V , Ic=-100j[/A, f=lkHz.

decodeur

Abstract: recepteur infrarouge depannage tv amplificateur audio a base de transistor amplificateur de son 3v depannage recepteur to 78 Coin Acceptor equivalent des circuit integre ttl IR 720P
Contextual Info: Informations importantes MODE D’EMPLOI Configuration et branchements Utilisation Fonctions pratiques MODÉLE PROJECTEUR LCD Maintenance et guide de dépannage XG-NV6XU Annexes Avant d’utiliser ce projecteur LCD, veuillez lire attentivement ce mode d’emploi.

2n2082

Abstract: 2N2152 2N2075 2N2076 2N2153 2N2156 2N3312 2N2079 2N2077 2N2078
Contextual Info: germanium power transistors PNP TO-36 I c max — 5 to 30A V c e o js u s j — 20 to 65V Ii f e VcEO(SUS) V ebo (Volts) (Volts) Type# @ Ic /V ce (Min-Max @ A /V ) VcEISAT) @ Ic / I b (V @ A /A ) V be @ Ic / V ce (V @ A /V ) IC EV Pd @ @ V cE (m A @ V )

Transconductance Look-up Table Based pHEMT Model

Contextual Info: Capacitance and RF-Conductance/Transconductance Look-up Table Based pHEMT Model Ce-Jun Wei1, Yu Zhu, Hong Yin , Oleksiy Klimashov, Cindy Zhang, and Tzung-Yin Lee SKYWORKS SOLUTION INC., 20 SYLVAN ROAD, WOBURN, MA 01801, USA 1 ce-jun.wei@skyworksinc.com ABSTRACT

2N3563

Abstract: 2N5133 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133 2N5088
Contextual Info: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l NPN EPOXY - LOW NOISE LEVEL AMPLIFIER Cont'd. X a Vcb V CE V EB hFE at •c V CE V V V min max mA V 2N5088 2N5089 2N5127 2N5131 2N5133 30 25 20 20 20 30 25 12 15

NPN 2sC1685

Abstract: 2SC1685 R 2SC1685 2SC1684 2SCI685 2SC1684 R 2SC1684 Q 290A 2SCI684 2SC1685 Q
Contextual Info: 2SC1684, 2SC1685 2SC1684, 2SC1685 '> ij 3 > NPN x fcf£ + '> 7, ;U7?U'— NPN Epitaxial Planar —JK ^iiSffl/G en eral Amplifier • # ^ /F e a tu re s • fii^ rL iiiP S ^ hFE ^ ¡f t v ^ / H i g h hFE • 3> ? ^ i ?mwm± V - 7 / Low V CE sat cE (sat)

TO-237a

Abstract: 2sc1175 92PU51A 2SA598 92PU45 TO-92B 2SC1346 92PU01A 2SA659 2SA719
Contextual Info: Medium Power Amplifiers and Switches TYPE POLA­ NO. RITY M A XIM UM RATINGS CASE Pd IC VCEO raW (A) (V) HFE min max V CE(sat) IT Cob C O M PLE IC V CE max min max MENTARY (mA) (V) (V) (A) (M Hz) (PF) TYPE 17+ 2SC1008 2SC1175 2SC1209 2SC1317 2SC1318 N N

Contextual Info: SILICON NPN EPITAXIAL TY P E 2SC4685 U nit in mm STROBE FLASH APPLICATIONS. M E D IU M POW ER AMPLIFIER APPLICATIONS. • High DC C urrent Gain : hF E l = 800-3200 ( V = 2V, Ic = 0.5A) : hpE (2) = 250 (Min.) (V ce= 2V , Ic = 4A) Low Saturation Voltage : v CE(sat) = 0-5V (Max.) (Ic = 4A, Ig = 40mA)

wifi amplifier circuit

Abstract: SDIO-WI-FI wifi schematic serial to wifi circuit SDHC schematic wi fi antenna schematic SDHC specification schematic wifi board SDIO device SPI DRIVER
Contextual Info: Freescale Semiconductor Application Note Document Number: AN3981 Rev. 0, 04/2010 Adding SDIO Wi-Fi Solution to i.MX Windows CE 5.0/Windows CE 6.0 by Multimedia Applications Division Freescale Semiconductor, Inc. Austin, TX 1 Introduction Wi-Fi, which stands for wireless fidelity, is a wireless

hmc506

Abstract: HMC676LC3C
Contextual Info: g ra tin s Ye ar 25 Ce leb ΠInn ov ce vi y lit Πion Qua at ANALOG & MIXED -SIGNAL ICS, MODULES, SUBSYSTEMS & INSTRUMENTATION, DC - 110 GHZ AUTOMOTIVE Telematics & Sensors BROADBAND Cable Modem, CATV, DBS & VoIP WiMAX, WiBro, WLAN & UWB CELLULAR INFRASTRUCTURE

10 GHz wideband mixer

Abstract: HMC676LP3E
Contextual Info: g ra tin Ye ar s 25 Ce leb  Inn ov ce vi y lit  ion Qua at Product Selection Guide Analog, Digital & Mixed -Signal ICs, Modules, Subsystems & Instrumentation, DC - 110 GHz Automotive Telematics & Sensors Broadband Cable Modem, CATV, DBS & VoIP WiMAX, WiBro, WLAN & UWB

Contextual Info: Midium Power Transistors ±50V / ±3A QS5Y2  Structure NPN/PNP Silicon epitaxial planar transistor  Dimensions (Unit : mm) TSMT5  Features 1) Low saturation voltage, typically V CE (sat) = -0.40V (Max.) (I C / I B= -1A / -50mA) V CE (sat) = 0.35V (Max.) (I C / I B= 1A / 50mA)

2N4033

Abstract: 2n2405 2N2927
Contextual Info: Medium Power Amplifiers and Switches M A X I M U M R A T IN G S TYPE NO. POLA­ R IT Y CASE Pd Ic m W (A) VcEO VfER " (V) H FE ^CE(sat) min max fi C 0h max Ic V CE max Ic min (m A) (V) (V) (A) (M H z) (M H z) COM PLE­ MENTARY TYPE 2N2219 2N2219A 2N2221

2N171

Abstract: 2N1566
Contextual Info: Medium Power Amplifiers and Switches TY PE NO. POLA­ R IT Y CA SE M A X IM U M R A T IN G S VcEO Pd Ic ^CER * mW (A ) (V) H FE ^CE(sat) Ic ^CE m ax Ic m in m ax (m A ) (V) (V) (A ) fT C 0b m in m ax (M H z) (M H z) CO M PLE­ M ENTARY TY PE PN3642 PN3643

up 5135

Abstract: OP-07 2N4416 FN2907 HA-5135 HA7-5135-5 HP5082-2810 5135 5135-5
Contextual Info: DUCT ENT E PRO T E L O L A CE M e r a t P E O BS R ED Ce n t MEND OM upport .com/tsc C S l E a R Data Sheet ic NO echn ww.intersil t ou r T contac TERSIL or w IN 1-888- HA-5135 January 2004 FN2907.5 2.5MHz, Precision Operational Amplifier Features The Intersil HA-5135 is a precision operational amplifier

4606 inverter ic

Abstract: XC6210C mosfet 4459 XC6210 XC6210A XC6210B XC6210D 12Represents marking 6B E5 Marking sot-23-5
Contextual Info: XC6210 Series •PIN CONFIGURATION VOUT 5 VOUT NC 4 VIN 5 2 1 3 VIN VSS CE 4 1 2 CE VSS SOT-25 TOP VIEW 3 NC SOT-89-5 (TOP VIEW) USP-6B (BOTTOM VIEW) *Please use the circuit without connecting the heat dissipation pad. If the pad needs to be connected to

Contextual Info: 0EC 13 « • C îr u t v u i SP7512 • SIGNAL P R O C E S SIN G EX CE LLE N CE Double Buffered 12-Bit M D A C Features ■ Monolithic Construction ■ 12 Bit Resolution ■ 0.01% Non-Linearity Photo 1 FPO ■ |iP Compatible ■ Latch-up Protected Applications

2N339IA

Contextual Info: Low Level and General Purpose Amplifiers TY PE NO. PO LA ­ R IT Y M A X IM U M R A T IN G S CA SE Pd m W Ic (m A ) VcEO (V) H FE m in m ax Ic (m A ) V ce V CE(sat) m ax (V) (V) It m in Cob m ax Ic (m A ) (M H z) (M H z) N .F. m ax (dB ) MPSD06 MPSD56 N

marking code ce SOT23

Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
Contextual Info: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A

code 4JW

Abstract: 000CP 5987 ac 187 and 188 A190 A2011BC1AD1 A2511BC2BD1 A2511FH1AD1 A2511FS1BD1 mci 4515
Contextual Info: Medium & High Current Rectifier Modules A2011BC1AD1 i s a 200V, sin g le phase center tap, using A20 c e lls on type 11 Fins, capable o f conducting 6 .3A ave .p er ce ll at 1800 C conduction angle in free a ir or 9.8A per ce ll in 2000 lin e a r feet per minute forced a ir.

CA3088e

Contextual Info: 'fWms \ May 1999 _\ Features CA3088E \ ca\\ \ o - AMReceiver Subsystem and General-Purpose Amplifier Array ce^ aj \ ^ c ^ - 1 Description - • Excellent Overload Characteristics The CA3088E, a monolithic integrated circuit, is an AM sub­

Contextual Info: FS8855-DS-26_EN JAN 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 2.6 Datasheet FS8855 500 mA LDO Linear Regulator FS8855 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

TRANSISTOR BC 534

Abstract: transistor bc 537 TR BC 237 B transistor bc 488 transistor 537 b 360 transistor bc 630 transistor BC682 TRANSISTOR BC 431 BC526 BC682
Contextual Info: fia DE|b[m?flfl OODDbSb ‘ï I 6091788 MICRO ELECTRONIC S C O R P - — Û2D 00656 D TYPE NO. V CE SAT H lFE CASE Pd ImW) 'c (A) V CEO (V) *T min Cob COMPLE­ max max M EN TARY (Vi 'c max *C (mA) V CE min (V) (A) (MHz) (pF) TYPE 432 440 441 445 446 P