CE AMPLIFIER Search Results

Contextual Info: 5 | M IT E L SL1466 _ Wideband PLL FM Demodulator Prelim inary Inform ation s e m ic o n d u c t o r CE CE 1 28 DIGF LO 2 27 31 VIDEO FB+ DIGF HI EE 3 26 31 VIDEO + CE AFC WINDOW CE OSC V c c CE 4 25 31 V ID E O - 5 24 31 VIDEO F B - 6 (o O S C + CE

2SD992

Abstract: bectron 2SD992-Z 2SB962-Z transistor mp
Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE m 2SD 992-Z NPN SILICON EPITAXIAL TRANSISTOR M P -3 DESCRIPTION 2SD992-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • Low V CE sat : V CE(sat) = 0 .3 V TYP.

Contextual Info: MITSUBISHI<Dig.Ana.lNTERFACE> M62393P/FP 8-BIT 8CH I2 :-BUS D-A CONVERTER WITH BUFFER AMPLIFIERS DESCRIPTION PIN CONFIGURATION TOP VIEW □j 20 j CSO SCL ce CS1 SDA Œ IX CE HE CH □l cn [W o cn > R Ao6 <o The M62393 is an integrated circuit semiconductor of

Contextual Info: GEC P L E S S E Y S W S L M I C O N D t; C T O U S FEBRUARY1997 _ PRELIMINARY INFORMATION SL1466 WIDEBAND PLL FM DEMODULATOR FEATURES • Single chip PLL system fo r wideband FM demodulation CE CE CE 1 28 31 2 27 33 26 39 a 4 5 6 AFC SET

KTA1268

Abstract: NF05 kta1268 transistor
Contextual Info: K EC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1268 EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • Low Noise. : NF=3dB Typ. , Rg=100ß, V Ce=-6V , Ic=-100juA, f=lkHz : NF=0.5dB(Typ.), Rg=lk&, V Ce=-6V , Ic=-100j[/A, f=lkHz.

2n3055 tos

Abstract: fairchild semiconductors 2N3054 2N3440 2N6233 BFX34 SE9331 35382d Solidev
Contextual Info: Semiconductors Fairchild Semiconductors Silicon Power Transistors NPN Power Transistors Metal Can T05 REFEREN CE T A B L E MAX ra See small signal general purpose amplifier and high voltage sections | C H A R A C T E R IS T IC S @25‘ C in g s V Code V CE O

decodeur

Abstract: recepteur infrarouge depannage tv amplificateur audio a base de transistor amplificateur de son 3v depannage recepteur to 78 Coin Acceptor equivalent des circuit integre ttl IR 720P
Contextual Info: Informations importantes MODE D’EMPLOI Configuration et branchements Utilisation Fonctions pratiques MODÉLE PROJECTEUR LCD Maintenance et guide de dépannage XG-NV6XU Annexes Avant d’utiliser ce projecteur LCD, veuillez lire attentivement ce mode d’emploi.

2n2082

Abstract: 2N2152 2N2075 2N2076 2N2153 2N2156 2N3312 2N2079 2N2077 2N2078
Contextual Info: germanium power transistors PNP TO-36 I c max — 5 to 30A V c e o js u s j — 20 to 65V Ii f e VcEO(SUS) V ebo (Volts) (Volts) Type# @ Ic /V ce (Min-Max @ A /V ) VcEISAT) @ Ic / I b (V @ A /A ) V be @ Ic / V ce (V @ A /V ) IC EV Pd @ @ V cE (m A @ V )

Transconductance Look-up Table Based pHEMT Model

Contextual Info: Capacitance and RF-Conductance/Transconductance Look-up Table Based pHEMT Model Ce-Jun Wei1, Yu Zhu, Hong Yin , Oleksiy Klimashov, Cindy Zhang, and Tzung-Yin Lee SKYWORKS SOLUTION INC., 20 SYLVAN ROAD, WOBURN, MA 01801, USA 1 ce-jun.wei@skyworksinc.com ABSTRACT

thyristor control arc welding rectifier circuit

Abstract: YJ1600 AIR FLOW DETECTOR CIRCUIT DIAGRAM WR340 waveguide directional coupler power supply for magnetron microwave oven magnetron circuit diagram electronic choke for tube light power supply for magnetron YJ1600 wiring diagram motor autotransformer SCHEMATIC POWER SUPPLY kw
Contextual Info: SM1180T & TM060 SWITCHING POWER GENERATOR FOR 6 KW MAGNETRON TECHNICAL NOTE Issue June 2002 SM1180T & TM060 Dichiarazione di Conformità CE CE Declaration of Conformity Nome del Costruttore: Manufacturer’s Name: ALTER s.r.l Indirizzo del Costruttore: Manufacturer’s Address:

2N3563

Abstract: 2N5133 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133 2N5088
Contextual Info: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l NPN EPOXY - LOW NOISE LEVEL AMPLIFIER Cont'd. X a Vcb V CE V EB hFE at •c V CE V V V min max mA V 2N5088 2N5089 2N5127 2N5131 2N5133 30 25 20 20 20 30 25 12 15

NPN 2sC1685

Abstract: 2SC1685 R 2SC1685 2SC1684 2SCI685 2SC1684 R 2SC1684 Q 290A 2SCI684 2SC1685 Q
Contextual Info: 2SC1684, 2SC1685 2SC1684, 2SC1685 '> ij 3 > NPN x fcf£ + '> 7, ;U7?U'— NPN Epitaxial Planar —JK ^iiSffl/G en eral Amplifier • # ^ /F e a tu re s • fii^ rL iiiP S ^ hFE ^ ¡f t v ^ / H i g h hFE • 3> ? ^ i ?mwm± V - 7 / Low V CE sat cE (sat)

TO-237a

Abstract: 2sc1175 92PU51A 2SA598 92PU45 TO-92B 2SC1346 92PU01A 2SA659 2SA719
Contextual Info: Medium Power Amplifiers and Switches TYPE POLA­ NO. RITY M A XIM UM RATINGS CASE Pd IC VCEO raW (A) (V) HFE min max V CE(sat) IT Cob C O M PLE IC V CE max min max MENTARY (mA) (V) (V) (A) (M Hz) (PF) TYPE 17+ 2SC1008 2SC1175 2SC1209 2SC1317 2SC1318 N N

Contextual Info: SILICON NPN EPITAXIAL TY P E 2SC4685 U nit in mm STROBE FLASH APPLICATIONS. M E D IU M POW ER AMPLIFIER APPLICATIONS. • High DC C urrent Gain : hF E l = 800-3200 ( V = 2V, Ic = 0.5A) : hpE (2) = 250 (Min.) (V ce= 2V , Ic = 4A) Low Saturation Voltage : v CE(sat) = 0-5V (Max.) (Ic = 4A, Ig = 40mA)

hmc506

Abstract: HMC676LC3C
Contextual Info: g ra tin s Ye ar 25 Ce leb ΠInn ov ce vi y lit Πion Qua at ANALOG & MIXED -SIGNAL ICS, MODULES, SUBSYSTEMS & INSTRUMENTATION, DC - 110 GHZ AUTOMOTIVE Telematics & Sensors BROADBAND Cable Modem, CATV, DBS & VoIP WiMAX, WiBro, WLAN & UWB CELLULAR INFRASTRUCTURE

10 GHz wideband mixer

Abstract: HMC676LP3E
Contextual Info: g ra tin Ye ar s 25 Ce leb  Inn ov ce vi y lit  ion Qua at Product Selection Guide Analog, Digital & Mixed -Signal ICs, Modules, Subsystems & Instrumentation, DC - 110 GHz Automotive Telematics & Sensors Broadband Cable Modem, CATV, DBS & VoIP WiMAX, WiBro, WLAN & UWB

2sc1175

Abstract: 92PU45 2SB564 2SC1008 2SD471 2sc100b 2SC1346 92PU01A 2SA659 2SA719
Contextual Info: MICRO ELECTRONICS LTD 51E D • bDTlTflfl OGGIDIB 3Ô4 « M E H K Medium Power Amplifiers and Switches TYPE NO. PO LA R ITY T-27-01 CASE M A X IM U M RATING S Pd ImW 'c A) 300 250 700 800 0.3 0.2 0.7 0.7 H V CEO (V) V CE(SAT) FE 'c Im A) V CE (V) 560# 232#

QS6Z5

Contextual Info: Data Sheet Complex Midium Power Transistors ±50V/±1A QS6Z5  Structure NPN/PNP Silicon epitaxial planar transistor  Dimensions (Unit : mm) TSMT6  Features 1) Low saturation voltage V CE (sat) = 0.35V (Max.) (I C / I B= 500mA / 25mA) V CE (sat) = 0.40V (Max.) (IC / I B= 500mA / 25mA)

Contextual Info: Midium Power Transistors ±50V / ±1A MP6Z12  Structure NPN/PNP Silicon epitaxial planar transistor  Dimensions (Unit : mm) MPT6 (Dual)  Features 1) Low saturation voltage, typically V CE (sat) = 0.35V (Max.) (I C / I B= 500mA / 25mA) V CE (sat) = -0.40V (Max.) (I C / I B= -500mA / -25mA)

Contextual Info: Midium Power Transistors ±50V / ±3A QS5Y2  Structure NPN/PNP Silicon epitaxial planar transistor  Dimensions (Unit : mm) TSMT5  Features 1) Low saturation voltage, typically V CE (sat) = -0.40V (Max.) (I C / I B= -1A / -50mA) V CE (sat) = 0.35V (Max.) (I C / I B= 1A / 50mA)

2N4033

Abstract: 2n2405 2N2927
Contextual Info: Medium Power Amplifiers and Switches M A X I M U M R A T IN G S TYPE NO. POLA­ R IT Y CASE Pd Ic m W (A) VcEO VfER " (V) H FE ^CE(sat) min max fi C 0h max Ic V CE max Ic min (m A) (V) (V) (A) (M H z) (M H z) COM PLE­ MENTARY TYPE 2N2219 2N2219A 2N2221

Contextual Info: FMC-CE Hardware User Guide UG-FMC-CE v1.1 August 23, 2010 Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display,

SE4010

Abstract: 2N3565 TIS92 2N3692 TIS90 2N2924 PN3565 PN3566 PN3694 PN4249
Contextual Info: TYPE NO. P O L A R IT Y Low Level and General Purpose Amplifiers CASE M A X IM U M R A T IN G S Pd mW 'c (m A | V CE(SAT) h fe V CEO (V) min max 'c (m A) V CE (V) max (V) 'c (m A ) fT m in (MHz) Cob N.F. max max (pF) (dB) PN3565 PN3566 PN3694 PN4249 PN4250

Contextual Info: Data Sheet Midium Power Transistors ±50V / ±3A MP6Z13  Structure NPN/PNP Silicon epitaxial planar transistor  Dimensions (Unit : mm) MPT6 (Dual)  Features 1) Low saturation voltage, typically V CE (sat) = 0.35V (Max.) (I C / I B= 1A / 50mA) V CE (sat) = -0.40V (Max.) (I C / I B= -1A / -50mA)