C1200 Search Results

C1100H

Abstract: 2N929 2N1613 bc107 transistor c240 Transistor BC107 2N918 BC107 BCY70 C1100L
Contextual Info: Unencapsulated Chip Transistors PNP and IMPN 'C h ip ' Transistors fo r M icro c ircu it Assemblies T ype C h aracte ristics @ 2 5 ° C M a x im u m R atings Discrete fa m ily B V CSO V bv ceo V C1100L C1100H C1200L C1200H C2160 C2180L C2180H C2300L C 2300H

C12002

Contextual Info: Order this document by C12002/D MOTOROLA M C12002 Analog M ixer The C12002 is a double balanced analog mixer, including an input amplifier feeding the mixer carrier port and a temperature compensated bias regulator. The input circuits for both the amplifier and mixer are differential

nicomatic

Abstract: C12000B C12000BG nicomatic a nicomatic is
Contextual Info: NICOMATIC SA HEADQUARTERS 173, rue des Fougères - ZI Les Bracots F-74890 Bons-en-Chablais Téléphone: +33 4 50 36 13 85 – Fax: +33 4 50 36 11 33 Email: nicomatic@nicomatic.fr NICOMATIC France is certified ISO 9001 : 2000 C12000B (-BG) SMD TEST TERMINAL

ASTM-D1710

Contextual Info: SSMB/SSLB/SSMC Specifications S S M B Interface Dim ensions P lu g Specifications S S M B a n d S S L B MIL-PRF-39012 as applicable M aterials: Plug spring fingers, center contacts: Beryllium copper per ASTM-B-196, Condition HT. Crimp sleeves: Seamless copper tube per ASTM-B-75, type C12000, temper: light anneal 050.

C12509

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C12009 MC12011 M C12013 Dual Modulus Prescaler These devices are tw o-m odulus prescalers which will divide by 5 and 6, 8 and 9, and 10 and 11, respectively. A M E C L-to-M T T L translator is provided to interface directly with the MC12014 Counter

Contextual Info: REVISIONS LTR 1 ftffSCJ >r‘ DESCRIPTION DATE APPROVED ^7*! NOTES: MATERIAL: 1. CRIMP SLEEVE = SEAMLESS COPPER TUBE PER ASTM B75, TYPE C12000, TEMPER: LIGHT ANNEAL 050. 2. INSULATOR = TEFLON VIRGIN WHITE PER ASTM D1710. 3. BODY & CONTACT = BRASS 1/2 HARD PER ASTM B16, ALLOY 360.

Contextual Info: REVISIONS DESCRIPTION APPROVED .157 DIA. NOTES: MATERIAL: 1. CONTACT & SPRING = BERYLLIUM COPPER PER ASTM B196. 2. INSULATORS = TEFLON VIRGIN WHITE PER ASTM D1710. 3. CRIMP SLEEVE - SEAMLESS COPPER TUBE PER ASTM B75, TYPE C12000, TEMPER: LIGHT ANNEAL 050.

Contextual Info: O rder this docum ent by M C12009/D MOTOROLA M C12009 MC12011 Dual Modulus Prescaler These devices are tw o -m o d u lu s prescalers w hich w ill divide by 5 and 6, 8 and 9, respectively. A M E C L -to -M T T L tra n sla to r is provided to interface d irectly w ith the M C12014 C ounter C ontrol Logic. In addition,

C800

Abstract: D800 C1200
Contextual Info: C1200 PC-Interface Beckhoff II/O-System C1200 PC-Interface Technische Beschreibung Eiserstraße 5 Telefon 05246/963-0 33415 Verl Telefax 05246/963-149 Datum: 12.10.94 Version : 2.0 Seite 1 von 14 C1200 PC-Interface Beckhoff II/O-System Inhaltsverzeichnis 1. Systembeschreibung .3

C1200

Contextual Info: epitex LED CHIP C1200-35 Opto-Device & Custom LED SPECIFICATION OF LED CHIP C1200-35 [NIR] 1 Commodity Type and Physical Characteristics. 1. Material InGaAsP/InP DDH) 2. Electrode Top Side P (anode) side : Au Alloy Bottom Side N (cathode) side : Au Alloy

Contextual Info: SQJ960EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 60 RDS(on) () at VGS = 10 V 0.036 RDS(on) () at VGS = 4.5 V 0.046 ID (A) per leg 8 Configuration Dual PowerPAK

Contextual Info: REVISIONS REV. DESCRIPTION DATE A INITIAL RELEASE 11/20/09 APPROVED M.J. B ECN #7967 07/22/10 D.N. .570 .492 .386 .156 SQ. .330 "D" FLAT .252 #6-40 UNF-2A .174 .188 HEX .040 .096 NOTES: MATERIALS: 1. CONTACT = BERYLLIUM COPPER PER ASTM B196, ALLOY C17300, TEMPER TD04.

IC1500

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values

C1000B

Abstract: 3020C
Contextual Info: KM416C1000BT ELECTRONICS CMOS DRAM 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

SQJ848AEP

Contextual Info: SQJ848AEP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested 40 RDS(on) () at VGS = 10 V 0.0076 RDS(on) () at VGS = 4.5 V 0.0086 ID (A)

SQJ410EP-T1-GE3

Contextual Info: SQJ410EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 30 RDS(on) () at VGS = 10 V 0.0039 RDS(on) () at VGS = 4.5 V 0.0042 ID (A) • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

CX9010-N031

Abstract: Beckhoff Ek1100 ES3004 bc515 hengstler 890 IL2301bxxx Fisher ROC 107 modbus CU2508 KL2541 HEIDENHAIN EnDat 2.1
Contextual Info: BECKHOFF New Automation Technology Ürünlere Genel Bakış Endüstriyel PC Gömülü PC Lightbus I/O Terminalleri Fieldbus Kutusu Sürücü Teknolojisi PC-Fieldbus kartları, Ağ anahtarları 2 Automation Motion I/O IPC Beckhoff Ürünlerine Genel Bakış | Bu katalog, Endüstriyel bilgisayarlar, saha haberleşmesi, sürücü teknolojileri, otomasyon yazılımları

Contextual Info: SQJ465EP www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested PRODUCT SUMMARY VDS (V)

Contextual Info: SQJ488EP www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 100 RDS(on) () at VGS = 10 V 0.0210 RDS(on) () at VGS = 4.5 V 0.0258 ID (A) • AEC-Q101 Qualifiedd

Contextual Info: SQJ912AEP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0093 • 100 % Rg and UIS Tested RDS(on) () at VGS = 4.5 V 0.0111

c12201

Abstract: C123-01-01 c12301 Nemic-lambda PC1R5-12-12 PC1R5-12-5 PC1R5-5-12 C12101
Contextual Info: NEMIC-LAMBDA PC1R5-5-* SPECIFICATIONS C120-01-01 MODEL PC1R5-5-3.3 PC1R5-5-5 PC1R5-5-12 ITEMS 1 Nominal Output Voltage V 3.3 5 12 2 Maximum Output Current A 0.4 0.3 0.125 W 1.32 1.5 1.5 % 66 68 70 3 Nominal Output Power 4 Efficiency Typ (*1) 5 Input Voltage Range

Contextual Info: SQJ443EP www.vishay.com Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

Contextual Info: SQJ962EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED PROPRIETARY INFORMATION NOT TO BE RELEASED WITHOUT WRITTEN PERMISSION FROM AN AUTHORIZED REPRESENTATIVE OF APPLIED ENGINEERING PRODUCTS NOTES: CONFORMS TO MIL-PRF-39012 SMB SERIES MATERIAL: 1. INSULATORS = TEFLON,VIRGIN WHITE PER ASTM D1710, GRADE I,