SQJ960EP Search Results
SQJ960EP Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SQJ960EP-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 60V 8A 8SO | Original | 10 | |||
| SQJ960EP-T1_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 60V 8A | Original | 249.77KB |
SQJ960EP Price and Stock
Vishay Intertechnologies SQJ960EP-T1_GE3- Tape and Reel (Alt: SQJ960EP-T1_GE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQJ960EP-T1_GE3 | Tape & Reel | 23 Weeks | 3,000 |
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SQJ960EP-T1_GE3 | Cut Tape | 3,000 | 1 |
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| SQJ960EP-T1_GE3 | Tape & Reel | 3,000 |
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SQJ960EP-T1_GE3 | 24 Weeks | 3,000 |
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Vishay Intertechnologies SQJ960EP-T1-GE3MOSFETs RECOMMENDED ALT SQJ9 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQJ960EP-T1-GE3 | Reel | 3,000 |
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SQJ960EP-T1-GE3 | 26 Weeks | 3,000 |
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Vishay Huntington SQJ960EPAutomotive Dual N-Channel 60 V (D-S) 175 °C MOSFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQJ960EP | 40,338 |
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Vishay Huntington SQJ960EP-T1_GE3MOSFET 2N-CH 60V 8A / Mosfet Array 60V 8A 34W Surface Mount PowerPAK® SO-8 Dual |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQJ960EP-T1_GE3 | 38,670 |
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SQJ960EP Datasheets Context Search
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Contextual Info: SQJ960EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 60 RDS(on) () at VGS = 10 V 0.036 RDS(on) () at VGS = 4.5 V 0.046 ID (A) per leg 8 Configuration Dual PowerPAK |
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sqj960epaec-q101sqj960ep-t1-ge32011/65/eu+2 | |
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Contextual Info: SQJ960EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 60 RDS(on) () at VGS = 10 V 0.036 RDS(on) () at VGS = 4.5 V 0.046 ID (A) per leg 8 Configuration Dual PowerPAK |
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sqj960epaec-q1012002/95/ec2011/65/eu+2 | |
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Contextual Info: SQJ960EP Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd |
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sqj960ep2002/95/ecaec-q101sqj960ep-t1-ge3+1 | |
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Contextual Info: SQJ960EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested |
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sqj960epaec-q1012002/95/ecsqj960ep-t1-ge3+1 | |
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Contextual Info: SQJ960EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested |
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sqj960epaec-q1012002/95/ecsqj960ep-t1-ge3+2 | |
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Contextual Info: SQJ960EP Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd |
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sqj960ep2002/95/ecaec-q101sqj960ep-t1-ge3+1 | |
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Contextual Info: SPICE Device Model SQJ960EP Vishay Siliconix Dual N-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sqj960ep11-mar-11 | |
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Contextual Info: SQJ960EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 60 RDS(on) () at VGS = 10 V 0.036 RDS(on) () at VGS = 4.5 V 0.046 ID (A) per leg 8 Configuration Dual PowerPAK |
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sqj960epaec-q1012002/95/ec2011/65/eu+2 | |
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Contextual Info: SQJ960EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested |
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sqj960epaec-q1012002/95/ecsqj960ep-t1-ge3+2 | |
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Contextual Info: SQJ960EP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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sqj960epan6093581m3403u+6 | |
DPAK/TO-252Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the |
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ups-2726vmn-pl0469-1311dpak/to-252 | |
sq4435
Abstract: SQP120N10-09
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vmn-pl0469-1505sq4435sqp120n10-09 | |
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Abstract: SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10
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VMN-SG2151-1406Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs for Automotive Applications MOSFETs – AEC-Q101 Qualified RESOURCES • • • • • • • Automotive MOSFET web page: www.vishay.com/mosfets/automotive-mosfets/ Automotive parametric search: www.vishay.com/automotive-mosfets/param |
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SQ3427
Abstract: sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309
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aec-q101vmn-sg2151-1209docu33-4-9337-2727sq3427+9 | |