SQJ488EP Search Results
SQJ488EP Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SQJ488EP-T1_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V POWERPAK SO8L | Original | 248.24KB | |||
SQJ488EP-T1_BE3 | Vishay Siliconix | MOSFET N-CH 100V 42A PPAK SO-8 | Original | 248.36KB | 11 | ||
SQJ488EP-T2_GE3 | Vishay Siliconix | N-CHANNEL 100-V (D-S) 175C MOSFE | Original | 248.36KB | 11 |
SQJ488EP Price and Stock
Vishay Siliconix SQJ488EP-T2_BE3MOSFET N-CH 100V 42A PPAK SO-8 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQJ488EP-T2_BE3 | Digi-Reel | 5,975 | 1 |
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SQJ488EP-T2_BE3 | 28,000 |
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Vishay Siliconix SQJ488EP-T1_BE3MOSFET N-CH 100V 42A PPAK SO-8 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQJ488EP-T1_BE3 | Digi-Reel | 5,700 | 1 |
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Vishay Siliconix SQJ488EP-T1_GE3MOSFET N-CH 100V 42A PPAK SO-8 |
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SQJ488EP-T1_GE3 | Cut Tape | 3,256 | 1 |
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Vishay Siliconix SQJ488EP-T2_GE3N-CHANNEL 100-V (D-S) 175C MOSFE |
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SQJ488EP-T2_GE3 | Digi-Reel | 426 | 1 |
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Vishay Intertechnologies SQJ488EP-T1_BE3Transistor MOSFET N-Channel 100V 42A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ488EP-T1_BE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SQJ488EP-T1_BE3 | Reel | 22 Weeks | 3,000 |
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SQJ488EP-T1_BE3 | 1,913 |
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SQJ488EP-T1_BE3 | 4,500 |
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SQJ488EP-T1_BE3 | 23 Weeks | 3,000 |
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SQJ488EP-T1_BE3 | 11,301 |
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SQJ488EP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SQJ488EP www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 100 RDS(on) () at VGS = 10 V 0.0210 RDS(on) () at VGS = 4.5 V 0.0258 ID (A) • AEC-Q101 Qualifiedd |
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SQJ488EP AEC-Q101 SQJ488EP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model SQJ488EP www.vishay.com Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C |
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SQJ488EP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SQJ488EP www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 100 RDS(on) () at VGS = 10 V 0.0210 RDS(on) () at VGS = 4.5 V 0.0258 ID (A) • AEC-Q101 Qualifiedd |
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SQJ488EP AEC-Q101 SQJ488EP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SQJ488EP www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET power MOSFET 100 RDS(on) (Ω) at VGS = 10 V 0.0210 RDS(on) (Ω) at VGS = 4.5 V 0.0258 ID (A) • AEC-Q101 qualified d |
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SQJ488EP AEC-Q101 SQJ488EP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
DPAK/TO-252Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the |
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Ups-2726 VMN-PL0469-1311 DPAK/TO-252 | |
sq4435
Abstract: SQP120N10-09
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VMN-PL0469-1505 sq4435 SQP120N10-09 | |
VMN-SG2151-1406Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs for Automotive Applications MOSFETs – AEC-Q101 Qualified RESOURCES • • • • • • • Automotive MOSFET web page: www.vishay.com/mosfets/automotive-mosfets/ Automotive parametric search: www.vishay.com/automotive-mosfets/param |
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AEC-Q101 VMN-SG2151-1406 VMN-SG2151-1406 |