SQJ410EP Search Results
SQJ410EP Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SQJ410EP-T1_GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 32A POWERPAKSO-8 | Original | 193.24KB |
SQJ410EP Price and Stock
Vishay Intertechnologies SQJ410EP-T1_GE3- Tape and Reel (Alt: SQJ410EP-T1_GE3) |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SQJ410EP-T1_GE3 | Tape & Reel | 23 Weeks | 3,000 |
|
Buy Now | |||||
|
SQJ410EP-T1_GE3 | 25,495 |
|
Buy Now | |||||||
|
SQJ410EP-T1_GE3 | 3,000 |
|
Get Quote | |||||||
|
SQJ410EP-T1_GE3 | 24 Weeks | 3,000 |
|
Get Quote | ||||||
Vishay Intertechnologies SQJ410EP-T1-GE3MOSFETs RECOMMENDED ALT SQJ4 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SQJ410EP-T1-GE3 | Reel | 3,000 | 3,000 |
|
Buy Now | |||||
|
SQJ410EP-T1-GE3 | 26 Weeks | 3,000 |
|
Get Quote | ||||||
SQJ410EP Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SQJ410EP-T1-GE3Contextual Info: SQJ410EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 30 RDS(on) () at VGS = 10 V 0.0039 RDS(on) () at VGS = 4.5 V 0.0042 ID (A) • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested |
Original |
sqj410epaec-q101sqj410ep-t1-ge32011/65/eu+2 | |
|
Contextual Info: SQJ410EP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
Original |
sqj410epan6095072m4090m+6 | |
|
Contextual Info: SQJ410EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) (Ω) at VGS = 10 V 0.0039 RDS(on) (Ω) at VGS = 4.5 V 0.0042 ID (A) |
Original |
sqj410epaec-q1012002/95/ecsqj410ep-t1-ge3+1 | |
|
Contextual Info: SQJ410EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 30 RDS(on) () at VGS = 10 V 0.0039 RDS(on) () at VGS = 4.5 V 0.0042 ID (A) • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested |
Original |
sqj410epaec-q101sqj410ep-t1-ge32002/95/ec+3 | |
|
Contextual Info: SQJ410EP Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) (Ω) at VGS = 10 V 0.0039 RDS(on) (Ω) at VGS = 4.5 V 0.0042 ID (A) • TrenchFET Power MOSFET |
Original |
sqj410ep2002/95/ecaec-q101sqj410ep-t1-ge3+1 | |
|
Contextual Info: SQJ410EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) (Ω) at VGS = 10 V 0.0039 RDS(on) (Ω) at VGS = 4.5 V 0.0042 ID (A) |
Original |
sqj410epaec-q1012002/95/ecsqj410ep-t1-ge3+2 | |
|
Contextual Info: SPICE Device Model SQJ410EP www.vishay.com Vishay Siliconix N-Channel 30 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
sqj410ep2011/65/eu2002/95/ec12-mar-12 | |
|
Contextual Info: SQJ410EP Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) (Ω) at VGS = 10 V 0.0039 RDS(on) (Ω) at VGS = 4.5 V 0.0042 ID (A) • TrenchFET Power MOSFET |
Original |
sqj410ep2002/95/ecaec-q101sqj410ep-t1-ge3+1 | |
DPAK/TO-252Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the |
Original |
ups-2726vmn-pl0469-1311dpak/to-252 | |
SQJ469ep
Abstract: SQ4483BE
|
Original |
aec-q101ts-16949vmn-ms6925-1406sqj469ep+1 | |
sq4435
Abstract: SQP120N10-09
|
Original |
vmn-pl0469-1505sq4435sqp120n10-09 | |
SQ2315ES
Abstract: SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10
|
Original |
aec-q101o-262o-263vmn-sg2151-1009+10 | |
VMN-SG2151-1406Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs for Automotive Applications MOSFETs – AEC-Q101 Qualified RESOURCES • • • • • • • Automotive MOSFET web page: www.vishay.com/mosfets/automotive-mosfets/ Automotive parametric search: www.vishay.com/automotive-mosfets/param |
Original |
aec-q101vmn-sg2151-1406 | |
|
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . MOSFETs - AEC-Q101 Qualified AND TEC I INNOVAT O L OGY for Automotive Applications N HN POWER MOSFETs O 19 62-2012 Resources • Automotive MOSFET Web Page: http://www.vishay.com/mosfets/automotive-mosfets/ |
Original |
aec-q101vmn-sg2151-1212 | |
|
|
|||