C114 E S W TRANSISTOR Search Results

transistor c114

Abstract: C114 Transistor transistor c114 chip transistor c114 NPN C114 E S W transistor for C114 transistor NPN C114 C-114 c114 2N3442
Contextual Info: 8368602 SOL ITRON DEVICES INC TS 95D 02905 D DE |fl3t.flb02 ODDSIDS 3 • “ [ ^ p y © ? ©ATTAIL© _ Devices, Inc. MEDIUM VOLTAGE CHIP N U M BER NPN SINGLE DIFFUSED MESA TRANSISTOR CONTACT METALLIZATION Base, Emitter and Collector Solder Coated 95/5% lead/tin.

VdS 2093 2009

Abstract: TL2014 transistor c114 chip transistor c114 diagram TL243 PTFB213004F TL145 tl1571 TL1621 transistor c114
Contextual Info: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz

Contextual Info: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular ampliiers covering the 2110 to 2170 MHz

IRFD020

Abstract: oasi 10C1 IRFD022 19s7
Contextual Info: HE T D I 4ÖSS452 ^ QQdfl3ti2 *4 1 nil. _ Data Sheet No. PD-9.470A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER TO R IRFD0 2 0 IRFD0 2 2 HEXFET TRANSISTORS N-CHANNEL HEXDIP 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL-IN-LINE PACKAGE FEATURES: 50 Volt, 0.10 Ohm, 1-Watt HEXDIP

SWITCHING TRANSISTOR C114

Abstract: C114 E S W transistor C114 transistor C114 dt for C114 transistor transistor c114 e
Contextual Info: P D - 9.1040 International iorJRectifier IRGPC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

IRF0020

Abstract: IH02 IRFD020 k 3525 MOSFET transistor 1gs 10C1 C-111 C-113 IRFD022 irf002
Contextual Info: HE D I 4ÖS5452 000â3fci2 -f" - *4 | Data Sheet No. PD-9.470A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IO R IRFDOSO IRFDOSS HEXFET TRANSISTORS N-CHANNEL HEXDIP’" 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL-IN-LINE PACKAGE 50 Volt, 0.10 Ohm, 1-Watt HEXDIP

Contextual Info: hrtemational IM ] Rectifier P D - 9.1040 IRGPC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

transistor c114

Abstract: RLI-135 viper 224 VIPER53 transistor c114 diagram VIPer53 Application Note c113 transistor transistor c113 VIPER53 application J107 DIODE
Contextual Info: AN2067 APPLICATION NOTE VIPower: DIMMABLE WHITE LEDS POWER SUPPLY WITH VIPer53 In the same way that LED manufacturers succeed to realize blue LEDs, they now propose white LEDs inside a monolithic chip, or so called “singlechip white” LEDs. A current source is the more appropriate way to

C134 transistor

Contextual Info: mikromedia+ for Stellaris ARM® Amazingly compact, all-on-single-pcb development board carring 4.3’’ TFT Touch Screen and lots of multimedia peripherals, all driven by powerful LM4F232H5QD microcontroller from ARM® Cortex -M4 family TO OUR VALUED CUSTOMERS

transistor c114

Contextual Info: PTMA080304M Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use in cellular amplifier applications in the 700 to 1000 MHz frequency

FRD070IF40-A

Abstract: FRD070IF40-A-T C-118
Contextual Info: V mikromedia 7 for STM32F4 Amazingly compact, all-on-single-pcb development board carring 7” TFT Touch Screen and lots of multimedia peripherals, all driven by powerful STM32F407ZG microcontroller from ARM Cortex -M4 family To our valued customers I want to express my thanks to you for being interested in our products and for

transistor c118

Abstract: C124 transistor transisTOR C123 transistor c114 diagram for C114 transistor transistor c114 transistor c117 587-1352-1-ND PM820 transistor C124
Contextual Info: PTMA080304M Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use in cellular amplifier applications in the 700 to 1000 MHz frequency

SWITCHING TRANSISTOR C114

Abstract: C114 E S W transistor C114 transistor for C114 transistor IRGPC30FD2 C-111 C-113 C-114 C-115 ic c113 61
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1040 IRGPC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes

PTFB093608

Abstract: 32c216 PTFB093608SV c221 TRANSISTOR TL251 tl250 transistor tl120 ATC100B2R7BW500X TL143
Contextual Info: PTFB093608SV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 920 – 960 MHz Description The PTFB093608SV is an LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960

TL145

Abstract: TL245 transistor c111 C216 TL152
Contextual Info: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960

PTFB093608

Abstract: tl2272 ptfb09360 TL258 TL103 application note PTFB093608FV tl131 TRANSISTOR c104 TL249 TL145
Contextual Info: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960

transistor c124

Abstract: TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300
Contextual Info: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use

TL272

Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
Contextual Info: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use

TL250

Abstract: TL239
Contextual Info: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching,

TL306

Abstract: TL184 TL167 TL307
Contextual Info: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use

74LSOO

Abstract: HD74LS145 DG24-1
Contextual Info: •BCD-to-Decimal Decoders/Drivers with 15V outputs • P IN A R R A N G EM E N T This BCD-to-decimal decoder/driver consists of eight inverters and ten four-input N A N D gates. The inverters are connected in pairs to make BCD input data available for decoding by the

1S2074

Abstract: 74LSOO HD74LS251 2845A
Contextual Info: • 1 of 8 Data Selectors/Multiplexers with strobe and three-state outputs This data selector/multiplexer contains full on-chip binary decoding to select one-of-eight data sources and features a strobe-controlled 3-state output. The strobe must be at a low logic level to enable this device.

Contextual Info: • 1 of 8 Data Selectors/M ultiplexers w ith s tro b e an d th ree-state outputs This data selector/m ultiplexer contains fu ll on-chip binary IB LO C K D IA G R A M decoding to select one-of-eight data sources and features a strobe-controlled 3-state output.

Contextual Info: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power ampliier applications in the 920 to 960 MHz frequency band. Features include input and output matching,