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Infineon Technologies AG


Infineon Technologies AG PTMA080304MV1AUMA1 Dual Wideband RF LDMOS Power Amplifier, 700 MHz to 1 GHz, 20 Pins, PG-DSO - Tape and Reel (Alt: PTMA080304MV1AUMA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	PTMA080304MV1AUMA1	Tape & Reel			250	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	PTMA080304MV1AUMA1			26 Weeks	250	1 - 10 - 100 - 1000 - 10000 -	Get Quote

A080304 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TL272 Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148 Contextual Info: A080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The A080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use	Original	ptma080304m 20-lead pg-dso-20-63 tl272 +9tl184 tl181 tl271 tl308 tl187 transistor tl274 tl293 tl193 tl148	PDF
TL113 Abstract: tl201 TL217 w3 smd transistor transistor c111 Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power ampliiers applications with frequencies from 700 MHz to 2200	Original	ptfa220081m pg-son-10 tl113 tl201 +3tl217 w3 smd transistor transistor c111	PDF
transistor c124 Abstract: TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300 Contextual Info: A080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W, 700 – 1000 MHz Description The A080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use	Original	ptma080304m 20-lead pg-dso-20-63 transistor c124 +9tl184 tl272 tl271 tl181 tl279 tl298 tl168 tl308 tl300	PDF
capacitor marking c106 Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200	Original	ptfa220081m capacitor marking c106 nfm18ps105 tl217 +6nfm18ps105r0j3 tl222 transistor tl217 transistor smd w2 c105 transistor c103 transistor data	PDF
transistor c118 Abstract: C124 transistor transisTOR C123 transistor c114 diagram for C114 transistor transistor c114 transistor c117 587-1352-1-ND PM820 transistor C124 Contextual Info: A080304M Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The A080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use in cellular amplifier applications in the 700 to 1000 MHz frequency	Original	ptma080304m 20-lead pg-dso-20-63 a080304 +10transistor c118 c124 transistor transistor c123 transistor c114 diagram for c114 transistor transistor c114 transistor c117 587-1352-1-nd pm820 transistor c124	PDF
c102 TRANSISTOR Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113 Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200	Original	ptfa220081m pg-son-10 c102 transistor c103 transistor +8c106 transistor transistor c105 transistor c104 c103 m transistor p 4712 nfm18ps105r0j3 c105 transistor tl113	PDF
transistor c114 Contextual Info: A080304M Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The A080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use in cellular amplifier applications in the 700 to 1000 MHz frequency	Original	ptma080304m 20-lead transistor c114	PDF
TL306 Abstract: TL184 TL167 TL307 Contextual Info: A080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The A080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use	Original	ptma080304m 20-lead pg-dso-20-63 96stances +4tl306 tl184 tl167 tl307	PDF