C 2OO TRANSISTOR Search Results
C 2OO TRANSISTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
| TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
| TPCP8514 |
|
NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
C 2OO TRANSISTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: 2N6052 SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION: The ASI 2N6052 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO - 3 MAXIMUM RATINGS Ie 12 A Vc e -1OO V Pd i s s 15O W @ T e # 25 0 C Tj -65 0 C to &2OO 0 C Ts t g |
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2N6052 | |
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Contextual Info: r r z S G S -m o M S O N * 7 / . iio » i[ ii« M D ( g i g s - c 2oo G S -C 200S INTELLIGENT STEPPER MOTOR CONTROLLERS FEATURES • Absolute and incremental positioning ■ Up to 999,999 step per move ■ Speed range to 10,000 steps/s ■ Ramp lenght to 999 steps |
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RS232 GS-C200Sonly) GS-C200S 0Db7122 | |
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Contextual Info: ÀSII 2N3019 SILICON NPN TRANSISTOR D E S C R IP T IO N : The 2 N 3 0 1 9 is Designed for General Purpose Amplifier and Switching Applications. P A C K A G E S T Y L E T O - 39 M A X IM U M R A T IN G S Ie 1.O A V ce 8O V p d is s 5.O W @ Te " 25 0C Tj -65 0C to +2OO 0C |
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2N3019 2N3019 | |
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Contextual Info: 2N6338 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6338 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. PACKAGE STYLE TO - 3/TO -204A A MAXIMUM RATINGS 25 A Ie 5O A PEAK Vc e 1OO V pd is s 2OO W @ Te " 25 0C Tj |
OCR Scan |
2N6338 -204A | |
2N3307Contextual Info: 2N3307 PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N3307 is Designed for General Purpose High Frequency Low Noise Amplifier, Mixer and Oscillator Applications. 5O mA PACKAGE STYLE TO- 72 o m Ie < MAXIMUM RATINGS -35 V Pd is s 3OO mW @ Te * 25 0C |
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2N3307 | |
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Contextual Info: 2N918 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N918 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. PACKAGE STYLE TO-72 MAXIMUM RATINGS 5O mA Ie o m < 15 V p d is s 3OO mW @ Te & 25 0C p d is s 2OO mW @ Ta & 25 0C |
OCR Scan |
2N918 | |
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Contextual Info: 2N6059 SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The ASI 2N6059 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 3 MAXIMUM RATINGS Ie 12 A Vce 1OO V Pd is s 15O W @ Te " 25 0C Tj -65 0C to &2OO 0C Ts t g -65 0C to &2OO 0C |
OCR Scan |
2N6059 | |
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Contextual Info: 2N6285 SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6285 is a PNP Monolithic Power Darlington Transistor Designed for General Purpose Am plifier and Switching Applications. PACKAGE STYLE TO- 3/TO- 204AA Ie 2o A 4o A PEAK < o m MAXIMUM RATINGS |
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2N6285 204AA | |
2N2432
Abstract: 25VVC
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2N2432 2N2432 25VVC | |
2N6385Contextual Info: 2N6385 SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The ASI 2N6385 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 3 MAXIMUM RATINGS Ie 15 A Vce 8O V p d is s 1OO W @ Te " 25 0C Tj -65 0C to +2OO 0C Tst g -65 0C to +2OO 0C |
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2N6385 | |
2N2243A
Abstract: 2N2243
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2N2243A 2N2243A 2N2243 | |
2N5784
Abstract: e50c
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2N5784 2N5784 e50c | |
2N1487Contextual Info: 2N1487 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N1487 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 3 6.o A Ib 3.o A 4o V O m le < MAXIMUM RATINGS P d is s 75 W @ Te $ 25 0C Tj -65 °C to +2oo 0C Tstg -65 0C to +2oo 0C |
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2N1487 2N1487 | |
2N2405
Abstract: C2035
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2N2405 2N2405 C2035 | |
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transistor te 2443Contextual Info: 2N6054 SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6294 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 66 < o m MAXIMUM RATINGS 4.o A Ie 8.o A PEAK 6o V Pd is s 5o W @ Te # 25 0C Tj -65 0C to +2oo 0C |
OCR Scan |
2N6054 2N6294 RAD8-89 RAD190 transistor te 2443 | |
2N6054Contextual Info: 2N6054 SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION; The 2N6054 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 3 MAXIMUM RATINGS Ie 8.O A Vc e -8O V Pd is s 1OO W @ Te " 25 0C Tj 65 0C to +2OO 0C Ts t g 65 0C to +2OO 0C |
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2N6054 | |
2N3117Contextual Info: 2N3117 SILICON NPN TRANSISTOR DESCRIPTION: The 2N3117 is Designed for General Purpose Low Level Amplifier Applications. PACKAGE STYLE TO-18 MAXIMUM RATINGS 5o mA Ie < o m eo V p d is s 3eo mW @ Ta = 25 °C Tj -es 0C to +2oo 0C Ts t g -e5 0C to +2oo 0C 0 je |
OCR Scan |
2N3117 2N3117 | |
Transistor D 798Contextual Info: ÀSII 2N3020 SILICON NPN TRANSISTOR DESCRIPTION: The 2N3020 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 39 MAXIMUM RATINGS Ie 1.O A Vc e 8O V Pd is s 5.O W @ Te " 25 0C Tj -65 0C to +2OO 0C Ts t g -65 0C to +2OO 0C |
OCR Scan |
2N3020 2N3020 Transistor D 798 | |
CE 65 MContextual Info: 2N3715 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3715 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 3 io A Ib 4.o A 6o V O m le < MAXIMUM RATINGS P d is s 15o W @ Te # 25 0C Tj -65 °C to +2oo 0C Tstg -65 0C to +2oo 0C |
OCR Scan |
2N3715 CE 65 M | |
2N5781Contextual Info: ÀSII 2N5781 SILICON PNP TRANSISTOR DESCRIPTION: The 2N5781 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 39 MAXIMUM RATINGS Ie 3.5 A ib 1.O A VeE -es v pd is s 1O W @ Te $ 25 0C Tj -e5 0C to +2OO 0C Ts t g -e5 0C to +2OO 0C |
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2N5781 2N5781 | |
2N6277
Abstract: 2N6277 applications
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2N6277 204AE 2N6277 2N6277 applications | |
TO-217Contextual Info: 2N6093 NPN SILICON RF POWER TRANSISTOR YLE TO-217 DESCRIPTION: The 2N6093 is a High Gain Linear RF Power Amplifier Used in Class A or Class B Applications With Individual Ballast Emitter Resistor and Built in Temperature Sensing Diode. VMBOL < m o 0.2D5 0.325 |
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2N6093 O-217 TO-217 | |
1011pContextual Info: Property Transistors —General-Purpose Amplifier Transistors □ sp lay a list Discret e Devices Product Information Type No. 2S A 1011P Category D iscrete D evices > T ra n sisto rs > G e n e ra l-P u rp o se A m plifier T ra n sisto rs |
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2SA1011P 1011P | |
2N2894A
Abstract: C 2OO transistor
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2N2894A 2N2894A C 2OO transistor | |