204AE Search Results

Contextual Info: This N-Channel Power MOSFETs z > Material National COOLFETsTM Semiconductor Copyrighted Case Style Pd W Tc = 25°C V D SS (V) Min l0 @ Tc = 25°C (A) Tc = 100°C (A) IRF350CF T0-204AE (42) T0-3P (43) T0-3P (43) TO-204AE (42) TO-3P (43) T0-3P (43) 150 400

FRK260

Contextual Info: FRK260D, FRK260R, FRK260H 46A, 200V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 46A, 200V, RDS on = 0.070Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

TO204AE

Contextual Info: Case Outline and Dimensions - TO-204AE

Contextual Info: HARRIS SEMICOND SECTOR 4DE D B 4302271 GÜ33747 FRK9460D OBJECTIVE HARRIS • RCA • BE • 4 •HAS 10A, -500V RDS on =1,20n INTERSIL This Objective Data Sheet Represents the Proposed Device Performance. Radiation-Hardened P-Channel Power MOSFET TO-204AE

61CMQ050

Abstract: 61-CMQ-050 120CNQ045 66PQ040 60CMQ050 60HQ100 60cmq 120CNQ030 130CNQ030 61-cmq
Contextual Info: I N T E RNfATIONAL H E RECTIFIER D I 4a 55452 ooiaoas1 i | Schottky Rectifiers 60 T O 160 A M P S Part Number ' f a v TC VR W M (A) <°C) 120 120 - fR M @ VFM ® Ti = 125SC& 'fm Rated V,RW M (mA) (A) Max. Tj Case Style <°C) 175 175 175 175 175 T0-204AE

SEM 238

Abstract: 1E14 2E12 FRK254D FRK254H FRK254R Rad Hard in Fairchild for MOSFET
Contextual Info: FRK254D, FRK254R, FRK254H 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 20A, 250V, RDS on = 0.170Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

FRK264R

Abstract: 1E14 2E12 FRK264D FRK264H Rad Hard in Fairchild for MOSFET
Contextual Info: FRK264D, FRK264R, FRK264H 34A, 250V, 0.120 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 34A, 250V, RDS on = 0.120Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

2N6277

Abstract: 2N6277 applications
Contextual Info: 2N6277 SILICON NPN HIGH-POWER TRANSISTOR PACKAGE STYLE TO- 204AE DESCRIPTION: The 2N6277 Power Transistor is Designed for High Current Switching and Amplifier Applications. MAXIMUM RATINGS 5O A Ie 1OO A PEAK IB 2O A VeE 15O V Pd is s 25O W @ Te " 25 0C Tj

Contextual Info: FRK160D, FRK160R, FRK160H 50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 50A, 100V, RDS on = 0.040Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

2E12

Abstract: FRK9150D FRK9150H FRK9150R
Contextual Info: FRK9150D, FRK9150R, FRK9150H 26A, -100V, 0.125 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 26A, -100V, RDS on = 0.125Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: PD - 91392C RADIATION HARDENED POWER MOSFET THRU-HOLE T0-204AE IRH9250 200V, P-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level R DS(on) IRH9250 100K Rads (Si) 0.315Ω IRH93250 300K Rads (Si) 0.315Ω ID -14A -14A International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for

Contextual Info: yw us FRK9260D, FRK9260R, FRK9260H 26A, -200V, 0.200 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 26A, -200V, RDS on = 0.200Q TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

2E12

Abstract: 2N7322D 2N7322H 2N7322R 86 diode
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK9150 D, R, H 2N7322D, 2N7322R 2N7322H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 26A, -100V, RDS(on) = 0.125Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts

2N7330

Abstract: 2E12 2N7330D 2N7330H 2N7330R
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK9260 D, R, H 2N7330D, 2N7330R 2N7330H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 26A, -200V, RDS(on) = 0.200Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts

AVALANCHE TRANSISTOR

Abstract: transistor irf250 5 pin relay 12v 30a IRF250 irf250 dc motor MOSFET IRF250 irf250 datasheet TB334 160V 30A TRANSISTOR
Contextual Info: IRF250 Data Sheet March 1999 30A, 200V, 0.085 Ohm, N-Channel Power MOSFET • 30A, 200V Ordering Information IRF250 TO-204AE • rDS ON = 0.085Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

Contextual Info: fil h a r f r is U L P S E M I C O N D U C T O R 2N7299D, 2N7299R 2N7299H REGISTRATION PENDING Currently Available as FRK160 D, R, H December 1992 . R adiation Hardened N -C hannel Pow er M O SFETs Package Features • 50A, 100V, RDS(on) > 0.040Q TQ-204AE

Contextual Info: ì li h a r r is U U FRK460D, FRK460R, FFÎK460H S E M I C O N D U C T O R 17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 17A, 500V, RDS on = 0.400ft TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts

ON4800

Abstract: SMM70N06
Contextual Info: SMM70N06 C T S ific a n ix JmB in c o rp o ra te d N-Channel Enhancement Mode Transistor TQ-204AE TO-3 BOTTOM VIEW PRODUCT SUMMARY V (BR)DSS r DS(ON) •d (V) (H) (A) 60 0.018 70 1 DRAIN (CASE) 2 GATE 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

1E14

Abstract: 2E12 FRK9260D FRK9260H FRK9260R Rad Hard in Fairchild for MOSFET
Contextual Info: FRK9260D, FRK9260R, FRK9260H 26A, -200V, 0.200 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 26A, -200V, RDS on = 0.200Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

2E12

Abstract: FRK160D FRK160H FRK160R Rad Hard in Fairchild for MOSFET
Contextual Info: FRK160D, FRK160R, FRK160H 50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 50A, 100V, RDS on = 0.040Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

T0204AA

Contextual Info: Case Outline and Dimensions - T0-204AE PIN 1 - SOURCE 2 - GATE 3 - DRAIN C A S E 30.15 [1.1 ST7] 5.15 [.203] 5.01 [.197] 16.89 [.665] 25.53 [1.005] 10.92 [.430] MAX. Ti y -A ▼ \\ // ' J S - i T ' w 1 ON 0 ' ' ——" // X / \ NOTES: \ \ -C- (7) 4-06 NI60]

IRF P CHANNEL MOSFET 10A 100V

Abstract: IRH9150 IRH93150
Contextual Info: PD - 90879B RADIATION HARDENED POWER MOSFET THRU-HOLE T0-204AE IRH9150 100V, P-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level R DS(on) IRH9150 100K Rads (Si) 0.075Ω IRH93150 300K Rads (Si) 0.075Ω ID -22A -22A International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for

Contextual Info: PD - 91392B RADIATION HARDENED POWER MOSFET THRU-HOLE T0-204AE IRH9250 200V, P-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level R DS(on) IRH9250 100K Rads (Si) 0.315Ω IRH93250 300K Rads (Si) 0.315Ω ID -14A -14A TO-204AE

ge cms 160v 190

Contextual Info: H A R R 2N7293D, 2N7293R 2N72Q3H ,S S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK250 D, R, H December 1992 . R adiation Hardened N -C hannel Pow er M O SFETs Package Features • 27A, 200V, RDS<on)» 0.100Q TO-204AE • Second Generation Rad Hard MOSFET Result* From New Design Concepts