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    byt52m Datasheets

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    Vishay Semiconductors BYT52M-TR

    DIODE AVALANCHE 1KV 1.4A SOD57
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    DigiKey BYT52M-TR Reel 45,000 5,000
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    BYT52M-TR Cut Tape 2,926 1
    • 1 $0.7
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    • 100 $0.4753
    • 1000 $0.30058
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    Vishay Semiconductors BYT52M-TAP

    DIODE AVALANCHE 1KV 1.4A SOD57
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    DigiKey BYT52M-TAP Cut Tape 23 1
    • 1 $0.7
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    BYT52M-TAP Ammo Pack 5,000
    • 1 -
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    Vishay Intertechnologies BYT52M-TR

    Diode Switching 1KV 1.4A 2-Pin SOD-57 T/R - Tape and Reel (Alt: BYT52M-TR)
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    Avnet Americas BYT52M-TR Reel 12 Weeks 25,000
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    BYT52M-TR Ammo Pack 21 Weeks, 4 Days 1
    • 1 $0.734
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    • 100 $0.492
    • 1000 $0.392
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    Bristol Electronics BYT52M-TR 201
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    BYT52M-TR 5,200
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    Vishay Intertechnologies BYT52M-TAP

    Diode Switching 1KV 1.4A 2-Pin SOD-57 Ammo - Ammo Pack (Alt: BYT52M-TAP)
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    Avnet Americas BYT52M-TAP Ammo Pack 12 Weeks 25,000
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    TME BYT52M-TAP 4,379 3
    • 1 -
    • 10 $0.279
    • 100 $0.252
    • 1000 $0.21
    • 10000 $0.21
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    New Advantage Corporation BYT52M-TAP 10,000 1
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    byt52m datasheet (6)

    Part ECAD Model Manufacturer Description Type PDF
    BYT52M Changzhou Galaxy Electrical Rectifier Diode, Fast Recovery Rectifier, Single, 1000V, DO-15, 2-Pin Original PDF
    BYT52M EIC Semiconductor Fast Recovery Rectifier Diodes Original PDF
    BYT52M Vishay Telefunken Fast Silicon Mesa Rectifiers Original PDF
    BYT52M Unknown Shortform Data and Cross References (Misc Datasheets) Scan PDF
    BYT52M-TAP Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE AVAL 1.4A 1000V SOD57 Original PDF
    BYT52M-TR Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE AVAL 1.4A 1000V SOD57 Original PDF

    byt52m Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2012 - BYT52J

    Abstract: BYT52M byt52g BYT52D
    Text: BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M Vishay Semiconductors Fast Avalanche , diode PARTS TABLE PART BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M TYPE DIFFERENTIATION VR = 50 , electrical characteristics BYT52G BYT52J BYT52K BYT52M Peak forward surge current Average forward current Non , board l = 10mm BYT52J I(BR)R = 0.4 A BYT52K BYT52M SYMBOL VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = , , BYT52G, BYT52J, BYT52K, BYT52M Vishay Semiconductors Fast Avalanche Sinterglass Diode MAXIMUM


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    PDF BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M 2002/95/EC 2002/96/EC OD-57 BYT52J BYT52M byt52g BYT52D

    2012 - BYT52D

    Abstract: BYT52J BYT52A
    Text: BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M Vishay Semiconductors Fast Avalanche , diode PARTS TABLE PART BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M TYPE DIFFERENTIATION VR = 50 , electrical characteristics BYT52G BYT52J BYT52K BYT52M Peak forward surge current Average forward current Non , board l = 10mm BYT52J I(BR)R = 0.4 A BYT52K BYT52M SYMBOL VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = , , BYT52G, BYT52J, BYT52K, BYT52M Vishay Semiconductors Fast Avalanche Sinterglass Diode MAXIMUM


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    PDF BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M 2002/95/EC 2002/96/EC OD-57 BYT52D BYT52J BYT52A

    Not Available

    Abstract: No abstract text available
    Text: BYT52M BYT52M ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYT52M-TR BYT52M-TAP 5000 , BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M www.vishay.com Vishay Semiconductors , SOD-57 BYT52M VR = 1000 V; IF(AV) = 1.4 A SOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C , See electrical characteristics BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M VR = VRRM , 0.4 A BYT52J BYT52K BYT52M Document Number: 86029 1 For technical questions within your


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    PDF BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M OD-57 MIL-STD-750,

    2012 - BYT52M

    Abstract: No abstract text available
    Text: ORDERING INFORMATION (Example) DEVICE NAME BYT52M BYT52M ORDERING CODE BYT52M-TR BYT52M-TAP TAPED UNITS , BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M www.vishay.com Vishay Semiconductors , BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M TYPE DIFFERENTIATION VR = 50 V; IF(AV) = 1.4 A VR = 100 , CONDITION PART BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M SYMBOL VR = VRRM VR = VRRM VR = VRRM VR = , forward current tp = 10 ms, half sine wave On PC board l = 10 mm I(BR)R = 0.4 A BYT52J BYT52K BYT52M


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    PDF BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M OD-57 MIL-STD-750, BYT52M

    2015 - Not Available

    Abstract: No abstract text available
    Text: BYT52M BYT52M ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYT52M-TR BYT52M-TAP 5000 , BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M www.vishay.com Vishay Semiconductors , SOD-57 BYT52M VR = 1000 V; IF(AV) = 1.4 A SOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C , See electrical characteristics BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M VR = VRRM , 0.4 A BYT52J BYT52K BYT52M Document Number: 86029 1 For technical questions within your


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    PDF BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M OD-57 MIL-STD-750,

    2004 - BYT52

    Abstract: BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M DIODE WITH SOD CASE
    Text: SOD-57 BYT52M VR = 1000 V; IFAV = 1.4 A SOD-57 Absolute Maximum Ratings Tamb = 25 °C , V VR = VRRM 800 V BYT52M Peak forward surge current VR = VRRM BYT52K VR = VRRM , BYT52M Average forward current Part ER 10 mJ Junction and storage temperature range


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    PDF BYT52. OD-57 MIL-STD-750, BYT52A OD-57 BYT52B BYT52D BYT52G BYT52 BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M DIODE WITH SOD CASE

    2003 - BYT52 diode

    Abstract: BYT52 BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M
    Text: ; IFAV = 1.4 A SOD57 BYT52M VR = 1000 V; IFAV = 1.4 A SOD57 Absolute Maximum Ratings Tamb , Repetitive peak reverse voltage Test condition BYT52M VR = VRRM 1000 V www.vishay.com 1 , BYT52M ER 10 mJ Maximum Thermal Resistance Tamb = 25 °C, unless otherwise specified


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    PDF BYT52. MILSTD-750, BYT52A BYT52B BYT52D BYT52G D-74025 07-Jan-03 BYT52 diode BYT52 BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M

    2010 - BYT52A

    Abstract: No abstract text available
    Text: BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M Vishay Semiconductors Fast Avalanche , diode PARTS TABLE PART BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M TYPE DIFFERENTIATION VR = 50 , electrical characteristics BYT52G BYT52J BYT52K BYT52M Peak forward surge current Average forward current Non , board l = 10mm BYT52J I(BR)R = 0.4 A BYT52K BYT52M SYMBOL VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = , , BYT52G, BYT52J, BYT52K, BYT52M Vishay Semiconductors Fast Avalanche Sinterglass Diode MAXIMUM


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    PDF BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M 2002/95/EC 2002/96/EC OD-57 BYT52A

    SOD57 Package

    Abstract: BYT52 diode byt52m
    Text: BYT52M Type differentiation VR = 50 V; IFAV = 1.4 A VR = 100 V; IFAV = 1.4 A VR = 200 V; IFAV = 1.4 A VR , type BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M Symbol VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR , (BR)R = 0.4 A BYT52J BYT52K BYT52M on PC board l = 10 mm Test condition tp = 10 ms, half sinewave Sub


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    PDF BYT52 MILSTD-750, BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M SOD57 Package BYT52 diode

    2005 - BYT52J

    Abstract: No abstract text available
    Text: BYT52K BYT52M Type differentiation VR = 50 V; IFAV = 1.4 A VR = 100 V; IFAV = 1.4 A VR = 200 V; IFAV = , condition see electrical characteristics Part BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M Peak forward , BYT52M Test condition on PC board l = 10 mm Part Symbol IFAV IFAV Tj = Tstg ER ER ER Value 0.85 1.4 - 55


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    PDF BYT52. 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, BYT52A BYT52B BYT52D BYT52G BYT52J

    2006 - diode sod57

    Abstract: BYT52J SOD-57 BYT52 BYT52A BYT52B BYT52D BYT52G BYT52K BYT52M
    Text: VR = 600 V; IFAV = 1.4 A SOD-57 BYT52K VR = 800 V; IFAV = 1.4 A SOD-57 BYT52M VR = , VR = VRRM 600 V BYT52K VR = VRRM 800 V BYT52M Rev. 1.6, 13-Apr-05 Value , BYT52J ER 10 mJ BYT52K ER 10 mJ BYT52M Average forward current Part ER


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    PDF BYT52. 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, BYT52A OD-57 BYT52B BYT52D diode sod57 BYT52J SOD-57 BYT52 BYT52A BYT52B BYT52D BYT52G BYT52K BYT52M

    2002 - Not Available

    Abstract: No abstract text available
    Text: BYT52M FAST RECOVERY RECTIFIER DIODE PRV : 1000 Volts Io : 1.4 Amperes DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency 1.00 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2) 0.166 (4.2) 0.034 (0.86) 0.028 (0.71) MECHANICAL DATA , CURVES ( BYT52M ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω Trr


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    PDF BYT52M DO-41 UL94V-O MIL-STD-202,

    2009 - BYT52M

    Abstract: BYT52 diode BYT52G BYT52 BYT52A BYT52B BYT52D BYT52J BYT52K
    Text: VR = 600 V; IFAV = 1.4 A SOD-57 BYT52K VR = 800 V; IFAV = 1.4 A SOD-57 BYT52M VR = , VR = VRRM 600 V BYT52K VR = VRRM 800 V BYT52M Rev. 1.6, 13-Apr-05 Value , BYT52J ER 10 mJ BYT52K ER 10 mJ BYT52M Average forward current Part ER


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    PDF BYT52. 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, BYT52A OD-57 BYT52B BYT52D BYT52M BYT52 diode BYT52G BYT52 BYT52A BYT52B BYT52D BYT52J BYT52K

    byt 52d

    Abstract: BYT 45 BYT52A BYT52M
    Text: BL GALAXY ELECTRICAL BYT52A(Z)- BYT52M (Z) VOLT AGE RANGE: 50 - 1000 V CURRENT: 1.4 A FAST RECOVERY RECT IFIERS FEATURES DO - 15 Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon, Alcohol,Is opropanol and s im ilar s olvents MECHANICAL DATA Cas e:JEDEC DO-15,m olded plas tic Term inals : Axial lead ,s , BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES BYT52A(Z)- BYT52M (Z) FIG.1 -


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    PDF BYT52A ---BYT52M DO--15 STD-202 byt 52d BYT 45 BYT52M

    2001 - Not Available

    Abstract: No abstract text available
    Text: BYT52. Vishay Semiconductors Fast Silicon Mesa Rectifiers Features D D D D Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Applications Fast rectifiers and switches 94 9539 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Type BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M Symbol Value 50 100 200 400 600 800 1000 50 , Tj=Tstg A A °C mJ I(BR)R=0.4A BYT52J. BYT52M ER Maximum Thermal Resistance Tj = 25


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    PDF BYT52. BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M D-74025 27-Sep-00

    BYT52

    Abstract: BYT52M BYT52B BYT52D BYT52G BYT52J BYT52K BYT52A D25M TELEFUNKEN BYT52J
    Text: BYT52K BYT52M Symbol ­65.+175 °C ER 10 mJ Value 45 100 Unit VR= VRRM IFSM IFAV BYT52J. BYT52M V A A Maximum Thermal Resistance Tj = 25_C Parameter


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    PDF BYT52. BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M D-74025 27-Sep-00 BYT52 BYT52M BYT52B BYT52D BYT52G BYT52J BYT52K BYT52A D25M TELEFUNKEN BYT52J

    byt 52d

    Abstract: diode byt 52m diode byt 45 diodes byt 52d BYT52A BYT52M BYT52B
    Text: BL GALAXY ELECTRICAL BYT52A(Z)- BYT52M (Z) VOLT AGE RANGE: 50 - 1000 V CURRENT: 1.4 A FAST RECOVERY RECT IFIERS FEATURES DO - 15 Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon, Alcohol,Is opropanol and s im ilar s olvents MECHANICAL DATA Cas e:JEDEC DO-15,m olded plas tic Term inals : Axial lead ,s , BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES BYT52A(Z)- BYT52M (Z) FIG.1 - REVERSE


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    PDF BYT52A ---BYT52M DO--15 STD-202 byt 52d diode byt 52m diode byt 45 diodes byt 52d BYT52M BYT52B

    9448 diode

    Abstract: w 9446 BYT52 diode 9446 diode R/gi 9448 diode 9447 diode byt52 diode byt52 m 1/gi 9448 diode
    Text: BYT52. Fast Silicon Mesa Rectifiers Temic S e m i c o n d u c t o r s Features · · · · Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Applications Fast rectifiers and switches Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage, peak reverse voltage Test Conditions Type BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M Peak forward surge current Average forward current Junction temperature Storage temperature range tp= 10ms Fig. 1 1=1


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    PDF BYT52. BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M 100KAV 12-Dec-94 9448 diode w 9446 BYT52 diode 9446 diode R/gi 9448 diode 9447 diode byt52 diode byt52 m 1/gi 9448 diode

    2005 - diode byt 45

    Abstract: BYT 45 J BAT52 BAT52A byt 52d BYT 1000 BYT52M diodes byt diode byt 52m BYT52A
    Text: BYT52A - BYT52M FAST RECOVERY RECTIFIERS D2 PRV : 50 - 1000 Volts Io : 1.4 Amperes FEATURES : * * * * * * * 1.00 (25.4) MIN. 0.161 (4.1) 0.154 (3.9) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb / RoHS Free 0.284 (7.2) 0.268 (6.8) 1.00 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) MECHANICAL DATA : * Case : D2 Molded plastic * Epoxy : UL94V-O rate flame


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    PDF BYT52A BYT52M UL94V-O MIL-STD-202, diode byt 45 BYT 45 J BAT52 BAT52A byt 52d BYT 1000 BYT52M diodes byt diode byt 52m

    2000 - Not Available

    Abstract: No abstract text available
    Text: BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M Peak Fwd. Surge Peak Inverse Current @ 8.3 ms Voltage


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    PDF 5000Ammo 5000/Reel 5000/Ammo BYV12 BYV13

    byt52

    Abstract: byt520
    Text: Te m ic TELEFUNKEN Semiconductors BYT52. Fast Silicon Mesa Rectifiers Features · · · · G lass passivated junction H erm etically sealed package L ow reverse current Soft recovery characteristics Applications Fast rectifiers and sw itches Absolute Maximum Ratings T; = 2 5 °C Param eter Reverse voltage, peak reverse voltage Test C onditions Type BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M Peak forward surge current Average forward current Junction tem perature Storage tem perature


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    PDF BYT52. BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M byt52 byt520

    Not Available

    Abstract: No abstract text available
    Text: TH09/2479 TH97/2478 www.eicsemi.com BYT52A - BYT52M IATF 0113686 SGS TH07/1033 FAST RECOVERY RECTIFIERS PRV : 50 - 1000 Volts Io : 1.4 Amperes DO - 41 FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb / RoHS Free 1.00 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2) 0.166 (4.2) 1.00 (25.4) MIN. 0.034 (0.86) 0.028 (0.71


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    PDF TH09/2479 TH97/2478 BYT52A BYT52M TH07/1033 DO-41 UL94V-O MIL-STD-202,

    DSEI2*61

    Abstract: RGP02-20E-GI byt12pi-1000 BYV16 DSEI2*61-12 BY713 BYT01-400 RGP15M RGP30M HFA15TB60
    Text: BYT52M 1000 1,4 1,3 1,0 200 BYV16 1000 1,5 1,5 1,0 300 BYV26E 1000 1,0 2,5 1,0 75 BYV96E 1000 1,5 1,6


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    PDF BYT01-400 RGP15M RGP02-20E-GI BY713 BYT03/400 BY500/1000 RGP30M BY329/1000 BY459/1500-PHI BY329/1200 DSEI2*61 byt12pi-1000 BYV16 DSEI2*61-12 HFA15TB60

    1995 - BYT52

    Abstract: BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M TELEFUNKEN BYT52J 9448 diode
    Text: BYT52. TELEFUNKEN Semiconductors Fast Silicon Mesa Rectifiers Features D Glass passivated junction D Hermetically sealed package D Low reverse current D Soft recovery characteristics Applications Fast rectifiers and switches 94 9539 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage, p g , peak reverse voltage Peak forward surge current Average forward current g Test Conditions Type BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M tp=10ms Fig. 1 l=10mm, TL


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    PDF BYT52. BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M D-74025 BYT52 BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M TELEFUNKEN BYT52J 9448 diode

    9448 diode

    Abstract: No abstract text available
    Text: BYT52. Vishay Telefunken Fast Silicon Mesa Rectifiers Features · · · · G lass passivated junction H erm etically sealed package Low reverse current Soft recovery characteristics Applications Fast rectifiers and sw itches Absolute Maximum Ratings Tj = 2 5 °C P aram eter R everse voltage =R epetitive peak reverse voltage Test C onditions Type BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M Peak forw ard surge current A verage forw ard current A verage forw ard current Junction and storage tem


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    PDF BYT52. BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M D-74025 24-Jun-98 9448 diode
    Supplyframe Tracking Pixel