2012 - BYT52J
Abstract: BYT52M byt52g BYT52D
Text: BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M Vishay Semiconductors Fast Avalanche , diode PARTS TABLE PART BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M TYPE DIFFERENTIATION VR = 50 , electrical characteristics BYT52G BYT52J BYT52K BYT52M Peak forward surge current Average forward current Non , board l = 10mm BYT52J I(BR)R = 0.4 A BYT52K BYT52M SYMBOL VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = , , BYT52G, BYT52J, BYT52K, BYT52M Vishay Semiconductors Fast Avalanche Sinterglass Diode MAXIMUM
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BYT52A,
BYT52B,
BYT52D,
BYT52G,
BYT52J,
BYT52K,
BYT52M
2002/95/EC
2002/96/EC
OD-57
BYT52J
BYT52M
byt52g
BYT52D
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2012 - BYT52D
Abstract: BYT52J BYT52A
Text: BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M Vishay Semiconductors Fast Avalanche , diode PARTS TABLE PART BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M TYPE DIFFERENTIATION VR = 50 , electrical characteristics BYT52G BYT52J BYT52K BYT52M Peak forward surge current Average forward current Non , board l = 10mm BYT52J I(BR)R = 0.4 A BYT52K BYT52M SYMBOL VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = , , BYT52G, BYT52J, BYT52K, BYT52M Vishay Semiconductors Fast Avalanche Sinterglass Diode MAXIMUM
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BYT52A,
BYT52B,
BYT52D,
BYT52G,
BYT52J,
BYT52K,
BYT52M
2002/95/EC
2002/96/EC
OD-57
BYT52D
BYT52J
BYT52A
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Not Available
Abstract: No abstract text available
Text: BYT52M BYT52M ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYT52M-TR BYT52M-TAP 5000 , BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M www.vishay.com Vishay Semiconductors , SOD-57 BYT52M VR = 1000 V; IF(AV) = 1.4 A SOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C , See electrical characteristics BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M VR = VRRM , 0.4 A BYT52J BYT52K BYT52M Document Number: 86029 1 For technical questions within your
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BYT52A,
BYT52B,
BYT52D,
BYT52G,
BYT52J,
BYT52K,
BYT52M
OD-57
MIL-STD-750,
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2012 - BYT52M
Abstract: No abstract text available
Text: ORDERING INFORMATION (Example) DEVICE NAME BYT52M BYT52M ORDERING CODE BYT52M-TR BYT52M-TAP TAPED UNITS , BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M www.vishay.com Vishay Semiconductors , BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M TYPE DIFFERENTIATION VR = 50 V; IF(AV) = 1.4 A VR = 100 , CONDITION PART BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M SYMBOL VR = VRRM VR = VRRM VR = VRRM VR = , forward current tp = 10 ms, half sine wave On PC board l = 10 mm I(BR)R = 0.4 A BYT52J BYT52K BYT52M
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BYT52A,
BYT52B,
BYT52D,
BYT52G,
BYT52J,
BYT52K,
BYT52M
OD-57
MIL-STD-750,
BYT52M
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2015 - Not Available
Abstract: No abstract text available
Text: BYT52M BYT52M ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYT52M-TR BYT52M-TAP 5000 , BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M www.vishay.com Vishay Semiconductors , SOD-57 BYT52M VR = 1000 V; IF(AV) = 1.4 A SOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C , See electrical characteristics BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M VR = VRRM , 0.4 A BYT52J BYT52K BYT52M Document Number: 86029 1 For technical questions within your
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BYT52A,
BYT52B,
BYT52D,
BYT52G,
BYT52J,
BYT52K,
BYT52M
OD-57
MIL-STD-750,
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2004 - BYT52
Abstract: BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M DIODE WITH SOD CASE
Text: SOD-57 BYT52M VR = 1000 V; IFAV = 1.4 A SOD-57 Absolute Maximum Ratings Tamb = 25 °C , V VR = VRRM 800 V BYT52M Peak forward surge current VR = VRRM BYT52K VR = VRRM , BYT52M Average forward current Part ER 10 mJ Junction and storage temperature range
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BYT52.
OD-57
MIL-STD-750,
BYT52A
OD-57
BYT52B
BYT52D
BYT52G
BYT52
BYT52A
BYT52B
BYT52D
BYT52G
BYT52J
BYT52K
BYT52M
DIODE WITH SOD CASE
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2003 - BYT52 diode
Abstract: BYT52 BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M
Text: ; IFAV = 1.4 A SOD57 BYT52M VR = 1000 V; IFAV = 1.4 A SOD57 Absolute Maximum Ratings Tamb , Repetitive peak reverse voltage Test condition BYT52M VR = VRRM 1000 V www.vishay.com 1 , BYT52M ER 10 mJ Maximum Thermal Resistance Tamb = 25 °C, unless otherwise specified
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BYT52.
MILSTD-750,
BYT52A
BYT52B
BYT52D
BYT52G
D-74025
07-Jan-03
BYT52 diode
BYT52
BYT52A
BYT52B
BYT52D
BYT52G
BYT52J
BYT52K
BYT52M
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2010 - BYT52A
Abstract: No abstract text available
Text: BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M Vishay Semiconductors Fast Avalanche , diode PARTS TABLE PART BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M TYPE DIFFERENTIATION VR = 50 , electrical characteristics BYT52G BYT52J BYT52K BYT52M Peak forward surge current Average forward current Non , board l = 10mm BYT52J I(BR)R = 0.4 A BYT52K BYT52M SYMBOL VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = , , BYT52G, BYT52J, BYT52K, BYT52M Vishay Semiconductors Fast Avalanche Sinterglass Diode MAXIMUM
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BYT52A,
BYT52B,
BYT52D,
BYT52G,
BYT52J,
BYT52K,
BYT52M
2002/95/EC
2002/96/EC
OD-57
BYT52A
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SOD57 Package
Abstract: BYT52 diode byt52m
Text: BYT52M Type differentiation VR = 50 V; IFAV = 1.4 A VR = 100 V; IFAV = 1.4 A VR = 200 V; IFAV = 1.4 A VR , type BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M Symbol VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR , (BR)R = 0.4 A BYT52J BYT52K BYT52M on PC board l = 10 mm Test condition tp = 10 ms, half sinewave Sub
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BYT52
MILSTD-750,
BYT52A
BYT52B
BYT52D
BYT52G
BYT52J
BYT52K
BYT52M
SOD57 Package
BYT52 diode
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2005 - BYT52J
Abstract: No abstract text available
Text: BYT52K BYT52M Type differentiation VR = 50 V; IFAV = 1.4 A VR = 100 V; IFAV = 1.4 A VR = 200 V; IFAV = , condition see electrical characteristics Part BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M Peak forward , BYT52M Test condition on PC board l = 10 mm Part Symbol IFAV IFAV Tj = Tstg ER ER ER Value 0.85 1.4 - 55
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BYT52.
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BYT52A
BYT52B
BYT52D
BYT52G
BYT52J
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2006 - diode sod57
Abstract: BYT52J SOD-57 BYT52 BYT52A BYT52B BYT52D BYT52G BYT52K BYT52M
Text: VR = 600 V; IFAV = 1.4 A SOD-57 BYT52K VR = 800 V; IFAV = 1.4 A SOD-57 BYT52M VR = , VR = VRRM 600 V BYT52K VR = VRRM 800 V BYT52M Rev. 1.6, 13-Apr-05 Value , BYT52J ER 10 mJ BYT52K ER 10 mJ BYT52M Average forward current Part ER
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BYT52.
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BYT52A
OD-57
BYT52B
BYT52D
diode sod57
BYT52J
SOD-57
BYT52
BYT52A
BYT52B
BYT52D
BYT52G
BYT52K
BYT52M
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2002 - Not Available
Abstract: No abstract text available
Text: BYT52M FAST RECOVERY RECTIFIER DIODE PRV : 1000 Volts Io : 1.4 Amperes DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency 1.00 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2) 0.166 (4.2) 0.034 (0.86) 0.028 (0.71) MECHANICAL DATA , CURVES ( BYT52M ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 ⦠Trr
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BYT52M
DO-41
UL94V-O
MIL-STD-202,
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2009 - BYT52M
Abstract: BYT52 diode BYT52G BYT52 BYT52A BYT52B BYT52D BYT52J BYT52K
Text: VR = 600 V; IFAV = 1.4 A SOD-57 BYT52K VR = 800 V; IFAV = 1.4 A SOD-57 BYT52M VR = , VR = VRRM 600 V BYT52K VR = VRRM 800 V BYT52M Rev. 1.6, 13-Apr-05 Value , BYT52J ER 10 mJ BYT52K ER 10 mJ BYT52M Average forward current Part ER
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BYT52.
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BYT52A
OD-57
BYT52B
BYT52D
BYT52M
BYT52 diode
BYT52G
BYT52
BYT52A
BYT52B
BYT52D
BYT52J
BYT52K
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byt 52d
Abstract: BYT 45 BYT52A BYT52M
Text: BL GALAXY ELECTRICAL BYT52A(Z)- BYT52M (Z) VOLT AGE RANGE: 50 - 1000 V CURRENT: 1.4 A FAST RECOVERY RECT IFIERS FEATURES DO - 15 Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon, Alcohol,Is opropanol and s im ilar s olvents MECHANICAL DATA Cas e:JEDEC DO-15,m olded plas tic Term inals : Axial lead ,s , BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES BYT52A(Z)- BYT52M (Z) FIG.1 -
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BYT52A
---BYT52M
DO--15
STD-202
byt 52d
BYT 45
BYT52M
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2001 - Not Available
Abstract: No abstract text available
Text: BYT52. Vishay Semiconductors Fast Silicon Mesa Rectifiers Features D D D D Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Applications Fast rectifiers and switches 94 9539 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Type BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M Symbol Value 50 100 200 400 600 800 1000 50 , Tj=Tstg A A °C mJ I(BR)R=0.4A BYT52J. BYT52M ER Maximum Thermal Resistance Tj = 25
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BYT52.
BYT52A
BYT52B
BYT52D
BYT52G
BYT52J
BYT52K
BYT52M
D-74025
27-Sep-00
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BYT52
Abstract: BYT52M BYT52B BYT52D BYT52G BYT52J BYT52K BYT52A D25M TELEFUNKEN BYT52J
Text: BYT52K BYT52M Symbol 65.+175 °C ER 10 mJ Value 45 100 Unit VR= VRRM IFSM IFAV BYT52J. BYT52M V A A Maximum Thermal Resistance Tj = 25_C Parameter
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BYT52.
BYT52A
BYT52B
BYT52D
BYT52G
BYT52J
BYT52K
BYT52M
D-74025
27-Sep-00
BYT52
BYT52M
BYT52B
BYT52D
BYT52G
BYT52J
BYT52K
BYT52A
D25M
TELEFUNKEN BYT52J
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byt 52d
Abstract: diode byt 52m diode byt 45 diodes byt 52d BYT52A BYT52M BYT52B
Text: BL GALAXY ELECTRICAL BYT52A(Z)- BYT52M (Z) VOLT AGE RANGE: 50 - 1000 V CURRENT: 1.4 A FAST RECOVERY RECT IFIERS FEATURES DO - 15 Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon, Alcohol,Is opropanol and s im ilar s olvents MECHANICAL DATA Cas e:JEDEC DO-15,m olded plas tic Term inals : Axial lead ,s , BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES BYT52A(Z)- BYT52M (Z) FIG.1 - REVERSE
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BYT52A
---BYT52M
DO--15
STD-202
byt 52d
diode byt 52m
diode byt 45
diodes byt 52d
BYT52M
BYT52B
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9448 diode
Abstract: w 9446 BYT52 diode 9446 diode R/gi 9448 diode 9447 diode byt52 diode byt52 m 1/gi 9448 diode
Text: BYT52. Fast Silicon Mesa Rectifiers Temic S e m i c o n d u c t o r s Features · · · · Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Applications Fast rectifiers and switches Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage, peak reverse voltage Test Conditions Type BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M Peak forward surge current Average forward current Junction temperature Storage temperature range tp= 10ms Fig. 1 1=1
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BYT52.
BYT52A
BYT52B
BYT52D
BYT52G
BYT52J
BYT52K
BYT52M
100KAV
12-Dec-94
9448 diode
w 9446
BYT52 diode
9446 diode
R/gi 9448 diode
9447 diode
byt52
diode byt52 m
1/gi 9448 diode
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2005 - diode byt 45
Abstract: BYT 45 J BAT52 BAT52A byt 52d BYT 1000 BYT52M diodes byt diode byt 52m BYT52A
Text: BYT52A - BYT52M FAST RECOVERY RECTIFIERS D2 PRV : 50 - 1000 Volts Io : 1.4 Amperes FEATURES : * * * * * * * 1.00 (25.4) MIN. 0.161 (4.1) 0.154 (3.9) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb / RoHS Free 0.284 (7.2) 0.268 (6.8) 1.00 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) MECHANICAL DATA : * Case : D2 Molded plastic * Epoxy : UL94V-O rate flame
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BYT52A
BYT52M
UL94V-O
MIL-STD-202,
diode byt 45
BYT 45 J
BAT52
BAT52A
byt 52d
BYT 1000
BYT52M
diodes byt
diode byt 52m
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2000 - Not Available
Abstract: No abstract text available
Text: BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M Peak Fwd. Surge Peak Inverse Current @ 8.3 ms Voltage
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5000Ammo
5000/Reel
5000/Ammo
BYV12
BYV13
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byt52
Abstract: byt520
Text: Te m ic TELEFUNKEN Semiconductors BYT52. Fast Silicon Mesa Rectifiers Features · · · · G lass passivated junction H erm etically sealed package L ow reverse current Soft recovery characteristics Applications Fast rectifiers and sw itches Absolute Maximum Ratings T; = 2 5 °C Param eter Reverse voltage, peak reverse voltage Test C onditions Type BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M Peak forward surge current Average forward current Junction tem perature Storage tem perature
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BYT52.
BYT52A
BYT52B
BYT52D
BYT52G
BYT52J
BYT52K
BYT52M
byt52
byt520
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Not Available
Abstract: No abstract text available
Text: TH09/2479 TH97/2478 www.eicsemi.com BYT52A - BYT52M IATF 0113686 SGS TH07/1033 FAST RECOVERY RECTIFIERS PRV : 50 - 1000 Volts Io : 1.4 Amperes DO - 41 FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb / RoHS Free 1.00 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2) 0.166 (4.2) 1.00 (25.4) MIN. 0.034 (0.86) 0.028 (0.71
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TH09/2479
TH97/2478
BYT52A
BYT52M
TH07/1033
DO-41
UL94V-O
MIL-STD-202,
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DSEI2*61
Abstract: RGP02-20E-GI byt12pi-1000 BYV16 DSEI2*61-12 BY713 BYT01-400 RGP15M RGP30M HFA15TB60
Text: BYT52M 1000 1,4 1,3 1,0 200 BYV16 1000 1,5 1,5 1,0 300 BYV26E 1000 1,0 2,5 1,0 75 BYV96E 1000 1,5 1,6
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BYT01-400
RGP15M
RGP02-20E-GI
BY713
BYT03/400
BY500/1000
RGP30M
BY329/1000
BY459/1500-PHI
BY329/1200
DSEI2*61
byt12pi-1000
BYV16
DSEI2*61-12
HFA15TB60
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1995 - BYT52
Abstract: BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M TELEFUNKEN BYT52J 9448 diode
Text: BYT52. TELEFUNKEN Semiconductors Fast Silicon Mesa Rectifiers Features D Glass passivated junction D Hermetically sealed package D Low reverse current D Soft recovery characteristics Applications Fast rectifiers and switches 94 9539 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage, p g , peak reverse voltage Peak forward surge current Average forward current g Test Conditions Type BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M tp=10ms Fig. 1 l=10mm, TL
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BYT52.
BYT52A
BYT52B
BYT52D
BYT52G
BYT52J
BYT52K
BYT52M
D-74025
BYT52
BYT52A
BYT52B
BYT52D
BYT52G
BYT52J
BYT52K
BYT52M
TELEFUNKEN BYT52J
9448 diode
|
9448 diode
Abstract: No abstract text available
Text: BYT52. Vishay Telefunken Fast Silicon Mesa Rectifiers Features · · · · G lass passivated junction H erm etically sealed package Low reverse current Soft recovery characteristics Applications Fast rectifiers and sw itches Absolute Maximum Ratings Tj = 2 5 °C P aram eter R everse voltage =R epetitive peak reverse voltage Test C onditions Type BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M Peak forw ard surge current A verage forw ard current A verage forw ard current Junction and storage tem
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BYT52.
BYT52A
BYT52B
BYT52D
BYT52G
BYT52J
BYT52K
BYT52M
D-74025
24-Jun-98
9448 diode
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