byt52m datasheet & application notes


Vishay Semiconductors BYT52M-TR DIODE AVALANCHE 1KV 1.4A SOD57
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BYT52M-TR	Reel	45,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.24422	Buy Now
	BYT52M-TR	Cut Tape	2,926		1	1 $0.7 10 $0.62 100 $0.4753 1000 $0.30058 10000 $0.2724	Buy Now
Vishay Semiconductors BYT52M-TAP DIODE AVALANCHE 1KV 1.4A SOD57
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BYT52M-TAP	Cut Tape	23		1	1 $0.7 10 $0.62 100 $0.4753 1000 $0.30058 10000 $0.2724	Buy Now
	BYT52M-TAP	Ammo Pack			5,000	1 - 10 - 100 - 1000 - 10000 $0.24422	Buy Now
Vishay Intertechnologies BYT52M-TR Diode Switching 1KV 1.4A 2-Pin SOD-57 T/R - Tape and Reel (Alt: BYT52M-TR)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	BYT52M-TR	Reel		12 Weeks	25,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
	BYT52M-TR	Ammo Pack		21 Weeks, 4 Days	1	1 $0.734 10 $0.734 100 $0.492 1000 $0.392 10000 $0.392	Buy Now
Bristol Electronics	BYT52M-TR		201			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	BYT52M-TR		5,200			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies BYT52M-TAP Diode Switching 1KV 1.4A 2-Pin SOD-57 Ammo - Ammo Pack (Alt: BYT52M-TAP)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	BYT52M-TAP	Ammo Pack		12 Weeks	25,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TME	BYT52M-TAP		4,379		3	1 - 10 $0.279 100 $0.252 1000 $0.21 10000 $0.21	Buy Now
New Advantage Corporation	BYT52M-TAP		10,000		1	1 - 10 - 100 - 1000 - 10000 $0.4542	Buy Now

Part	Manufacturer	Description	Type	PDF
BYT52M	Changzhou Galaxy Electrical	Rectifier Diode, Fast Recovery Rectifier, Single, 1000V, DO-15, 2-Pin	Original	PDF
BYT52M	EIC Semiconductor	Fast Recovery Rectifier Diodes	Original	PDF
BYT52M	Vishay Telefunken	Fast Silicon Mesa Rectifiers	Original	PDF
BYT52M	Unknown	Shortform Data and Cross References (Misc Datasheets)	Scan	PDF
BYT52M-TAP	Vishay Semiconductors	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE AVAL 1.4A 1000V SOD57	Original	PDF
BYT52M-TR	Vishay Semiconductors	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE AVAL 1.4A 1000V SOD57	Original	PDF

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byt52m datasheet (6)

byt52m Datasheets Context Search

2012 - BYT52J

2012 - BYT52D

Not Available

2012 - BYT52M

2015 - Not Available

2004 - BYT52

2003 - BYT52 diode

2010 - BYT52A

SOD57 Package

2005 - BYT52J

2006 - diode sod57

2002 - Not Available

2009 - BYT52M

byt 52d

2001 - Not Available

BYT52

byt 52d

9448 diode

2005 - diode byt 45

2000 - Not Available

byt52

Not Available

DSEI2*61

1995 - BYT52

9448 diode

Catalog Datasheet	MFG & Type	PDF	Document Tags
2012 - BYT52J Abstract: BYT52M byt52g BYT52D Text: BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M Vishay Semiconductors Fast Avalanche , diode PARTS TABLE PART BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M TYPE DIFFERENTIATION VR = 50 , electrical characteristics BYT52G BYT52J BYT52K BYT52M Peak forward surge current Average forward current Non , board l = 10mm BYT52J I(BR)R = 0.4 A BYT52K BYT52M SYMBOL VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = , , BYT52G, BYT52J, BYT52K, BYT52M Vishay Semiconductors Fast Avalanche Sinterglass Diode MAXIMUM	Original	PDF	BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M 2002/95/EC 2002/96/EC OD-57 BYT52J BYT52M byt52g BYT52D
2012 - BYT52D Abstract: BYT52J BYT52A Text: BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M Vishay Semiconductors Fast Avalanche , diode PARTS TABLE PART BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M TYPE DIFFERENTIATION VR = 50 , electrical characteristics BYT52G BYT52J BYT52K BYT52M Peak forward surge current Average forward current Non , board l = 10mm BYT52J I(BR)R = 0.4 A BYT52K BYT52M SYMBOL VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = , , BYT52G, BYT52J, BYT52K, BYT52M Vishay Semiconductors Fast Avalanche Sinterglass Diode MAXIMUM	Original	PDF	BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M 2002/95/EC 2002/96/EC OD-57 BYT52D BYT52J BYT52A
Not Available Abstract: No abstract text available Text: BYT52M BYT52M ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYT52M-TR BYT52M-TAP 5000 , BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M www.vishay.com Vishay Semiconductors , SOD-57 BYT52M VR = 1000 V; IF(AV) = 1.4 A SOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 Â°C , See electrical characteristics BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M VR = VRRM , 0.4 A BYT52J BYT52K BYT52M Document Number: 86029 1 For technical questions within your	Original	PDF	BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M OD-57 MIL-STD-750,
2012 - BYT52M Abstract: No abstract text available Text: ORDERING INFORMATION (Example) DEVICE NAME BYT52M BYT52M ORDERING CODE BYT52M-TR BYT52M-TAP TAPED UNITS , BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M www.vishay.com Vishay Semiconductors , BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M TYPE DIFFERENTIATION VR = 50 V; IF(AV) = 1.4 A VR = 100 , CONDITION PART BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M SYMBOL VR = VRRM VR = VRRM VR = VRRM VR = , forward current tp = 10 ms, half sine wave On PC board l = 10 mm I(BR)R = 0.4 A BYT52J BYT52K BYT52M	Original	PDF	BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M OD-57 MIL-STD-750, BYT52M
2015 - Not Available Abstract: No abstract text available Text: BYT52M BYT52M ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYT52M-TR BYT52M-TAP 5000 , BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M www.vishay.com Vishay Semiconductors , SOD-57 BYT52M VR = 1000 V; IF(AV) = 1.4 A SOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 Â°C , See electrical characteristics BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M VR = VRRM , 0.4 A BYT52J BYT52K BYT52M Document Number: 86029 1 For technical questions within your	Original	PDF	BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M OD-57 MIL-STD-750,
2004 - BYT52 Abstract: BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M DIODE WITH SOD CASE Text: SOD-57 BYT52M VR = 1000 V; IFAV = 1.4 A SOD-57 Absolute Maximum Ratings Tamb = 25 °C , V VR = VRRM 800 V BYT52M Peak forward surge current VR = VRRM BYT52K VR = VRRM , BYT52M Average forward current Part ER 10 mJ Junction and storage temperature range	Original	PDF	BYT52. OD-57 MIL-STD-750, BYT52A OD-57 BYT52B BYT52D BYT52G BYT52 BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M DIODE WITH SOD CASE
2003 - BYT52 diode Abstract: BYT52 BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M Text: ; IFAV = 1.4 A SOD57 BYT52M VR = 1000 V; IFAV = 1.4 A SOD57 Absolute Maximum Ratings Tamb , Repetitive peak reverse voltage Test condition BYT52M VR = VRRM 1000 V www.vishay.com 1 , BYT52M ER 10 mJ Maximum Thermal Resistance Tamb = 25 °C, unless otherwise specified	Original	PDF	BYT52. MILSTD-750, BYT52A BYT52B BYT52D BYT52G D-74025 07-Jan-03 BYT52 diode BYT52 BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M
2010 - BYT52A Abstract: No abstract text available Text: BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M Vishay Semiconductors Fast Avalanche , diode PARTS TABLE PART BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M TYPE DIFFERENTIATION VR = 50 , electrical characteristics BYT52G BYT52J BYT52K BYT52M Peak forward surge current Average forward current Non , board l = 10mm BYT52J I(BR)R = 0.4 A BYT52K BYT52M SYMBOL VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = , , BYT52G, BYT52J, BYT52K, BYT52M Vishay Semiconductors Fast Avalanche Sinterglass Diode MAXIMUM	Original	PDF	BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M 2002/95/EC 2002/96/EC OD-57 BYT52A
SOD57 Package Abstract: BYT52 diode byt52m Text: BYT52M Type differentiation VR = 50 V; IFAV = 1.4 A VR = 100 V; IFAV = 1.4 A VR = 200 V; IFAV = 1.4 A VR , type BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M Symbol VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR , (BR)R = 0.4 A BYT52J BYT52K BYT52M on PC board l = 10 mm Test condition tp = 10 ms, half sinewave Sub	Original	PDF	BYT52 MILSTD-750, BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M SOD57 Package BYT52 diode
2005 - BYT52J Abstract: No abstract text available Text: BYT52K BYT52M Type differentiation VR = 50 V; IFAV = 1.4 A VR = 100 V; IFAV = 1.4 A VR = 200 V; IFAV = , condition see electrical characteristics Part BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M Peak forward , BYT52M Test condition on PC board l = 10 mm Part Symbol IFAV IFAV Tj = Tstg ER ER ER Value 0.85 1.4 - 55	Original	PDF	BYT52. 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, BYT52A BYT52B BYT52D BYT52G BYT52J
2006 - diode sod57 Abstract: BYT52J SOD-57 BYT52 BYT52A BYT52B BYT52D BYT52G BYT52K BYT52M Text: VR = 600 V; IFAV = 1.4 A SOD-57 BYT52K VR = 800 V; IFAV = 1.4 A SOD-57 BYT52M VR = , VR = VRRM 600 V BYT52K VR = VRRM 800 V BYT52M Rev. 1.6, 13-Apr-05 Value , BYT52J ER 10 mJ BYT52K ER 10 mJ BYT52M Average forward current Part ER	Original	PDF	BYT52. 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, BYT52A OD-57 BYT52B BYT52D diode sod57 BYT52J SOD-57 BYT52 BYT52A BYT52B BYT52D BYT52G BYT52K BYT52M
2002 - Not Available Abstract: No abstract text available Text: BYT52M FAST RECOVERY RECTIFIER DIODE PRV : 1000 Volts Io : 1.4 Amperes DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency 1.00 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2) 0.166 (4.2) 0.034 (0.86) 0.028 (0.71) MECHANICAL DATA , CURVES ( BYT52M ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 â¦ Trr	Original	PDF	BYT52M DO-41 UL94V-O MIL-STD-202,
2009 - BYT52M Abstract: BYT52 diode BYT52G BYT52 BYT52A BYT52B BYT52D BYT52J BYT52K Text: VR = 600 V; IFAV = 1.4 A SOD-57 BYT52K VR = 800 V; IFAV = 1.4 A SOD-57 BYT52M VR = , VR = VRRM 600 V BYT52K VR = VRRM 800 V BYT52M Rev. 1.6, 13-Apr-05 Value , BYT52J ER 10 mJ BYT52K ER 10 mJ BYT52M Average forward current Part ER	Original	PDF	BYT52. 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, BYT52A OD-57 BYT52B BYT52D BYT52M BYT52 diode BYT52G BYT52 BYT52A BYT52B BYT52D BYT52J BYT52K
byt 52d Abstract: BYT 45 BYT52A BYT52M Text: BL GALAXY ELECTRICAL BYT52A(Z)- BYT52M (Z) VOLT AGE RANGE: 50 - 1000 V CURRENT: 1.4 A FAST RECOVERY RECT IFIERS FEATURES DO - 15 Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon, Alcohol,Is opropanol and s im ilar s olvents MECHANICAL DATA Cas e:JEDEC DO-15,m olded plas tic Term inals : Axial lead ,s , BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES BYT52A(Z)- BYT52M (Z) FIG.1 -	Original	PDF	BYT52A ---BYT52M DO--15 STD-202 byt 52d BYT 45 BYT52M

2001 - Not Available Abstract: No abstract text available Text: BYT52. Vishay Semiconductors Fast Silicon Mesa Rectifiers Features D D D D Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Applications Fast rectifiers and switches 94 9539 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Type BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M Symbol Value 50 100 200 400 600 800 1000 50 , Tj=Tstg A A °C mJ I(BR)R=0.4A BYT52J. BYT52M ER Maximum Thermal Resistance Tj = 25	Original	PDF	BYT52. BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M D-74025 27-Sep-00
BYT52 Abstract: BYT52M BYT52B BYT52D BYT52G BYT52J BYT52K BYT52A D25M TELEFUNKEN BYT52J Text: BYT52K BYT52M Symbol 65.+175 °C ER 10 mJ Value 45 100 Unit VR= VRRM IFSM IFAV BYT52J. BYT52M V A A Maximum Thermal Resistance Tj = 25_C Parameter	Original	PDF	BYT52. BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M D-74025 27-Sep-00 BYT52 BYT52M BYT52B BYT52D BYT52G BYT52J BYT52K BYT52A D25M TELEFUNKEN BYT52J
byt 52d Abstract: diode byt 52m diode byt 45 diodes byt 52d BYT52A BYT52M BYT52B Text: BL GALAXY ELECTRICAL BYT52A(Z)- BYT52M (Z) VOLT AGE RANGE: 50 - 1000 V CURRENT: 1.4 A FAST RECOVERY RECT IFIERS FEATURES DO - 15 Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon, Alcohol,Is opropanol and s im ilar s olvents MECHANICAL DATA Cas e:JEDEC DO-15,m olded plas tic Term inals : Axial lead ,s , BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES BYT52A(Z)- BYT52M (Z) FIG.1 - REVERSE	Original	PDF	BYT52A ---BYT52M DO--15 STD-202 byt 52d diode byt 52m diode byt 45 diodes byt 52d BYT52M BYT52B
9448 diode Abstract: w 9446 BYT52 diode 9446 diode R/gi 9448 diode 9447 diode byt52 diode byt52 m 1/gi 9448 diode Text: BYT52. Fast Silicon Mesa Rectifiers Temic S e m i c o n d u c t o r s Features · · · · Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Applications Fast rectifiers and switches Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage, peak reverse voltage Test Conditions Type BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M Peak forward surge current Average forward current Junction temperature Storage temperature range tp= 10ms Fig. 1 1=1	OCR Scan	PDF	BYT52. BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M 100KAV 12-Dec-94 9448 diode w 9446 BYT52 diode 9446 diode R/gi 9448 diode 9447 diode byt52 diode byt52 m 1/gi 9448 diode
2005 - diode byt 45 Abstract: BYT 45 J BAT52 BAT52A byt 52d BYT 1000 BYT52M diodes byt diode byt 52m BYT52A Text: BYT52A - BYT52M FAST RECOVERY RECTIFIERS D2 PRV : 50 - 1000 Volts Io : 1.4 Amperes FEATURES : * * * * * * * 1.00 (25.4) MIN. 0.161 (4.1) 0.154 (3.9) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb / RoHS Free 0.284 (7.2) 0.268 (6.8) 1.00 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) MECHANICAL DATA : * Case : D2 Molded plastic * Epoxy : UL94V-O rate flame	Original	PDF	BYT52A BYT52M UL94V-O MIL-STD-202, diode byt 45 BYT 45 J BAT52 BAT52A byt 52d BYT 1000 BYT52M diodes byt diode byt 52m
2000 - Not Available Abstract: No abstract text available Text: BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M Peak Fwd. Surge Peak Inverse Current @ 8.3 ms Voltage	Original	PDF	5000Ammo 5000/Reel 5000/Ammo BYV12 BYV13
byt52 Abstract: byt520 Text: Te m ic TELEFUNKEN Semiconductors BYT52. Fast Silicon Mesa Rectifiers Features · · · · G lass passivated junction H erm etically sealed package L ow reverse current Soft recovery characteristics Applications Fast rectifiers and sw itches Absolute Maximum Ratings T; = 2 5 °C Param eter Reverse voltage, peak reverse voltage Test C onditions Type BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M Peak forward surge current Average forward current Junction tem perature Storage tem perature	OCR Scan	PDF	BYT52. BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M byt52 byt520
Not Available Abstract: No abstract text available Text: TH09/2479 TH97/2478 www.eicsemi.com BYT52A - BYT52M IATF 0113686 SGS TH07/1033 FAST RECOVERY RECTIFIERS PRV : 50 - 1000 Volts Io : 1.4 Amperes DO - 41 FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb / RoHS Free 1.00 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2) 0.166 (4.2) 1.00 (25.4) MIN. 0.034 (0.86) 0.028 (0.71	Original	PDF	TH09/2479 TH97/2478 BYT52A BYT52M TH07/1033 DO-41 UL94V-O MIL-STD-202,
DSEI261 Abstract: RGP02-20E-GI byt12pi-1000 BYV16 DSEI261-12 BY713 BYT01-400 RGP15M RGP30M HFA15TB60 Text: BYT52M 1000 1,4 1,3 1,0 200 BYV16 1000 1,5 1,5 1,0 300 BYV26E 1000 1,0 2,5 1,0 75 BYV96E 1000 1,5 1,6	OCR Scan	PDF	BYT01-400 RGP15M RGP02-20E-GI BY713 BYT03/400 BY500/1000 RGP30M BY329/1000 BY459/1500-PHI BY329/1200 DSEI261 byt12pi-1000 BYV16 DSEI261-12 HFA15TB60
1995 - BYT52 Abstract: BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M TELEFUNKEN BYT52J 9448 diode Text: BYT52. TELEFUNKEN Semiconductors Fast Silicon Mesa Rectifiers Features D Glass passivated junction D Hermetically sealed package D Low reverse current D Soft recovery characteristics Applications Fast rectifiers and switches 94 9539 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage, p g , peak reverse voltage Peak forward surge current Average forward current g Test Conditions Type BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M tp=10ms Fig. 1 l=10mm, TL	Original	PDF	BYT52. BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M D-74025 BYT52 BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M TELEFUNKEN BYT52J 9448 diode
9448 diode Abstract: No abstract text available Text: BYT52. Vishay Telefunken Fast Silicon Mesa Rectifiers Features · · · · G lass passivated junction H erm etically sealed package Low reverse current Soft recovery characteristics Applications Fast rectifiers and sw itches Absolute Maximum Ratings Tj = 2 5 °C P aram eter R everse voltage =R epetitive peak reverse voltage Test C onditions Type BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M Peak forw ard surge current A verage forw ard current A verage forw ard current Junction and storage tem	OCR Scan	PDF	BYT52. BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M D-74025 24-Jun-98 9448 diode