BYT 45
Abstract: BYT52A-BYT52M
Text: %. BYT 52A Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average f orw ard rectif ied current 9.5mm lead length, @TA =75 BYT 52B 100 70 10 BYT 52D 200 140 200 BYT 52G 400 280 400 1.4 BYT 52J 600 420 600 BYT 52K 800 560 800 BYT 52M
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BYT52A-BYT52M
DO--15
STD-202
BYT 45
BYT52A-BYT52M
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byt 52d
Abstract: BYT 45 BYT52A BYT52M
Text: inductive load. For capacitive load,derate by 20%. BYT 52A BYT 52B BYT 52D BYT 52G BYT 52J BYT 52K BYT 52M UNITS 200 400 600 800 1000 V Maximum recurrent
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BYT52A
---BYT52M
DO--15
STD-202
byt 52d
BYT 45
BYT52M
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byt 52d
Abstract: diode byt 52m diode byt 45 diodes byt 52d BYT52A BYT52M BYT52B
Text: inductive load. For capacitive load,derate by 20%. BYT 52A BYT 52B BYT 52D BYT 52G BYT 52J BYT 52K BYT 52M UNITS 200 400 600 800 1000 V Maximum recurrent
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BYT52A
---BYT52M
DO--15
STD-202
byt 52d
diode byt 52m
diode byt 45
diodes byt 52d
BYT52M
BYT52B
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Text: BYT51/B BYT 51/D BYT 51/G B Y T51/J BYT 51/K BYT 51/M 16 16 16 16 16 16 16 BYT BYT BYT BYT BYT BYT BYT 15 15 15 15 15 15 15 F A AF F A AF F 5 2 /A 52/B 52/D 52/G 52/J 52/K 52/M 1 Contents, alpha-numeric Type BYT BYT BYT BYT BYT BYT Page Type 15 15 15 15 15 15 BYX82 BY X83 BY X 84 BYX85 BY X86 BYT 5 4 /A BYT 54/B BYT 54/D BYT 54/G BYT 54/J BYT 54/K BYT 54/M 15 15 15 15 15 15 15 BZW 03/D 7V5 - D 270
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98c86
Abstract: HiSeC XTAL 10mHZ TRANSISTOR BJ 032 OKI ignition TRANSISTOR BJ 033 putchar AN985 eeprom programmer schematic easy design universal 98C86A
Text: 98C86A EE Write 93C86A EE incld cop888cg.inc sect one, ram addl : .dsb 1 addh: .dsb 1 byt : .dsb 1 , -getchar Get byte from UART store byte in if byt =0 then jump to subroutine byt , #030 HiSEC if byt=l then jump to subroutine byt , #031 EE main loop until branch getchar byte, #032 eerd Get byte from UART store byte in if byt =2 read eeprom contents www.fai rch ildsem i .com 484 AN-985 ifeq jsr Id jp HiSEC: jsr jsr IFEQ jsr ifeq jsr jp byt , #033 eewt pole, #00 main init getchar byt , #034 hird byt
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AN-985
NM95HS01/02
MM57HS
NM95HSPROG.
98c86
HiSeC
XTAL 10mHZ
TRANSISTOR BJ 032
OKI ignition
TRANSISTOR BJ 033
putchar
AN985
eeprom programmer schematic easy design universal
98C86A
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1998 - BYT 56M diode
Abstract: IC4 7805 98c86 eeprom programmer schematic easy design universal eeprom programmer schematic AN-985 coil 2n2222a 98C86A 7805 12v to 5v HiSeC
Text: ; .incld cop888cg.inc .sect one, ram addl: .dsb 1 addh: .dsb 1 byt : .dsb 1 pole: .dsb 1 cnt , byte from UART store byte in byt ifeq byt , #030 ;if byt =0 then jump to subroutine HiSEC jp HiSEC ; ifeq byt , #031 ;if byt =1 then jump to subroutine EE jp EE ; jp main ;loop until branch ; EE: jsr getchar ;Get byte from UART store byte in byt ifeq byte, #032 ;if byt =2 read eeprom contents jsr eerd ; 11 www.fairchildsemi.com byt , #033 eewt pole, #00 main AN-985 ifeq
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AN-985
NM95HS01/02
MM57HS
BYT 56M diode
IC4 7805
98c86
eeprom programmer schematic easy design universal
eeprom programmer schematic
AN-985
coil 2n2222a
98C86A
7805 12v to 5v
HiSeC
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1999 - E800
Abstract: 77211 IDT77211
Text: 1 F7FF 1 E800 1 E7FF Rx Large Free Buf Queue (4K Byt es ) Rx Small Free Buf Queue (4K Bytes ) Rx Cells FIFO Buffers (16K Byt es ) Byt e Bit 0 Addr es s 7 FFFC 7 F000 7 EFFC 7 , (48 Byt es ) Variable Rate SCD1 (48 Byt es ) Variable Rate SCD2 (48 Byt es ) TST and fixed rate SCD region 1 C000 1 BFFF (40 ,8 16 Byt es ) 1 0000 0 FFFF (196,608 Bytes ) 0 0000 Not Used Rx Connection Table (256K Byt es ) 7 9FD0 7 9FCC 7 9FA0 7 9F9C 7 9F70 7 9F6C 7
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1997 - zilog 1866
Abstract: tranzistor Z84C0010PEC Z80 PIO CTC SIO DMA Tranzistory a7 tranzistor vzor 50 call P32 tranzistor hexadecimal napajeci zdroj
Text: pameti. Cip obsahuje nejvýse 32kB, obvykle jen 2 nebo 4 kB. Pamet nad tuto velikost muze být pripojena jako vnejsí pamet RAM nebo ROM a mohou do ní být ulozeny jak program tak data. Vnejsí pamet mohou , musí být ulozena na adrese 000CH. Pri behu programu je po kazdé instrukci zvýsen obsah PC (Program , zásobníku také mohou být ulozena jakákoliv data (instrukce PUSH) a ze zásobníku zase vyzvednuta (instrukce , . Zásobník muze být umísten i do vnejsí pameti, ukazatel zásobníku je pak tvoren dvojicí registru SPL a SPH
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BYT 77 DIODE
Abstract: No abstract text available
Text: C T S G S -T H O M S O N * 7 # . HD»[llUi©⢠iiD®i BYT 08P-200 -»400 FAST , °C/W 1/5 5T3 â BYT 08P-200 -> 400 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS , < v) a See note See figure 12 Typ. Max. Unit 3 .3 Note: Applicable to BYT 08 P , SGS-THOMSON *7/ M&imis&nseMg BYT 08P-200 Rgure 3. Non repetitive peak surge current versus overload , D G b S 7 ñ ü ISl (A /,*) SGS-IHOMSON 3/5 BYT 08P-200 -» 400 Figure 9. Peak
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08P-200
T0220AC
BYT08P-
7T2T237
00b57a7
BYT 77 DIODE
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2007 - CX1000
Abstract: No abstract text available
Text: být odvozeny zádné nároky na provedení zmny jiz dodaných výrobk. 1.1.2 Dodací podmínky Mimo jiné , následující podmínky: výrobky TwinSAFE smjí být pouzívány pouze v souladu s urcením (viz kapitola ,Popis , obsluze musí být neustále k dispozici v citelném stavu v míst pouzití výrobku TwinSAFE · , jsou spojeny do jedné nebo nkolika skupiny TwinSAFE Groups. Skupiny TwinSAFE Groups mohou být spoustny , . Potvrzení chyby neprobíhá automaticky, tzn. vstup ,ERR ACK" musí být vzdy propojen. Krom toho je skupina
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KL6904-FB
KL6904
CX1000
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1994 - diodes byt 16p
Abstract: No abstract text available
Text: BYT 16P-200 400 FAST RECOVERY RECTIFIER DIODES VERY LOW REVERSE RECOVERY TIME VERY LOW , BYT 16 P can be used: A2 A1 K TO220AB (Plastic) ABSOLUTE MAXIMUM RATINGS (limiting , Junction Temperature Range Symbol BYT 16P- Parameter Unit 200 300 300 VRRM , /5 BYT 16P-200 400 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Synbol IR Test , to BYT 16P-400 only To evaluate the conduction losses use the following equations: VF = 1.1 +
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16P-200
O220AB
diodes byt 16p
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1998 - 77211
Abstract: IDT77211 E800
Text: F7FF 1 E800 1 E7FF Rx Large Free Buf Queue (4K Byt es) Rx Small Free Buf Queue (4K Byt es) Rx Cells FIFO Buffers (16K Byt es) Byt e Bit 0 Address 7FFFC 7 F000 7 EFFC 7 , (48 Byt es) Variable Rate SCD1 (48 Byt es) Variable Rate SCD2 (48 Byt es) TST and fixed rate SCD region 1 C000 1 BFFF (40,816 Byt es) 1 0000 0 FFFF (196,608 Byt es) 0 0000 Not , SRAM addresses - t he byt e address is t he address writ t en t o t he command regist er shift ed lef
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BYT 45
Abstract: diode byt 42m BYT42A BYT42M
Text: or inductive load. For capacitive load,derate by 20%. BYT 42A BYT 42B BYT 42D BYT 42G BYT 42J BYT 42K BYT 42M UNITS Maximum recurrent peak reverse voltage V RRM 50
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BYT42A
---BYT42M
DO-15
DO-15
STD-202
BYT 45
diode byt 42m
BYT42M
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miai 220
Abstract: 3100CM diode RP 60400
Text: rZJ SGS-THOMSON BYT 60-200->400 FAST RECOVERY RECTIFIER DIODES â VERY LOW REVERSE RECOVERY , to+ 150 °C Symbol Parameter BYT 60- Unit 200 300 400 Vrrm Repetitive Peak Reverse Voltage , Parameter Value Unit Rth (j- c) Junction-case 0.7 "CAW November 1994 1/5 7T2T237 DDbbacî3 böfl BYT , to BYT 60-400 only To evaluate the conduction losses use the following equations: VF = 1.1 + 0.0045 , M&SÃÃHJCTflQGâlJÃSS BYT 60-200 400 Figure 3. Non repetitive peak surge current versus overload duration Figure 4
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BYT 45
Abstract: No abstract text available
Text: . For capacitive load,derate by 20%. BYT 42A Maximum recurrent peak reverse voltage Maximum RMS , BYT 42B 100 70 100 BYT 42D 200 140 200 BYT 42G 400 280 400 1.25 BYT 42J 600 420 600 BYT 42K 800 560 800 BYT 42M 1000 700 1000 UNITS V V V A V RRM V RMS VDC IF(AV) 50 35 50
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BYT42A-BYT42M
DO-15
DO-15
STD-202
20DERATING
BYT 45
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2002 - AN2351
Abstract: MSC8101
Text: 11 CSEL 12 13 14 15 BYT CNT LST 000 = 1 bit/byte 001 = 2 bits/bytes . , bits or bytes minus one that are controlled by the entry. The BYT field indicates whether the CNT field the number of bits or bytes. For example an entry with CNT=000 and BYT =1 indicates 1 byte and entry with CNT = 111 and BYT = 0 indicates 8 bits. A maximum of eight bytes is allowed per entry. 10 , entry refers to a superchannel 14 15 BYT CNT LST = 1 bit/byte = 2 bits/bytes = 8 bit
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AN2351/D
MSC8101
AN2351
MSC8101
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Not Available
Abstract: No abstract text available
Text: à 7 SGS-THOMSON *7 £ liMD©l^i[L[l@M)RD[l®8 BYT 12-200-^400 FAST RECOVERY RECTIFIER , Range Ti Symbol BYT 12- Parameter Unit 200 300 400 V rrm Repetitive Peak , Value Unit 2.5 °C/W 1/5 BYT 12-200 -4 400 ELECTRICAL CHARACTERISTICS STATIC , /ns Vcc = 120 V Lp = 7\iH = If (AV) Seenöte See figure 12 If Note: Applicable to BYT , ti 2 c 2 3 7 i GGbSfiDfl DbO Min. Typ. 3.3 Max. Unit BYT 12-200 ->400 Figure
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2006 - Not Available
Abstract: No abstract text available
Text: No file text available
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PHAST-48V
STM-16/OC-48
TXC-06965
TXC-06965-MB,
STM-16/STS-48
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BYT 45
Abstract: BYT54A-BYT54M
Text: capacitive load,derate by 20%. BYT 54A Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 10mm lead length, @T A=75 BYT 54B 100 70 100 BYT 54D 200 140 200 BYT 54G 400 280 400 1.25 BYT 54J 600 420 600 BYT 54K 800 560 800 BYT 54M 1000 700 1000 UNITS V V V A VRRM VRMS VDC IF(AV) 50 35 50 Peak
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BYT54A-BYT54M
012ounces
BYT 45
BYT54A-BYT54M
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2002 - SCT 380
Abstract: AN2351 32-entry BYT 521 MSC8101
Text: Strobe L1STx is logic 1 9 10 11 12 CSEL 13 14 15 BYT CNT LST 000 = 1 , . The BYT field indicates whether the CNT field the number of bits or bytes. For example an entry with CNT=000 and BYT =1 indicates 1 byte and entry with CNT = 111 and BYT = 0 indicates 8 bits. A maximum , = The entry refers to a superchannel 15 BYT CNT 14 LST = 1 bit/byte = 2 bits , of how MCSEL is used in the transmit SI RAM with superchannels. · CNT and BYT . For regular
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AN2351
MSC8101
SCT 380
AN2351
32-entry
BYT 521
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1998 - 16P-400
Abstract: diodes byt 16p
Text: BYT 16P- 400 ® FAST RECOVERY RECTIFIER DIODES VERY LOW REVERSE RECOVERY TIME VERY LOW , BYT 16 P can be used: A2 A1 K TO220AB (Plastic) ABSOLUTE MAXIMUM RATINGS (limiting , Junction-case Coupling August 1998 Ed : 1A per leg total 1/5 BYT 16P-400 ELECTRICAL , . IF = IF (AV) See note See figure 12 Typ. 3.3 Note : Applicable to BYT 16P-400 only To , versus average current 2/5 Figure 2. Peak current versus form factor BYT 16P-400 Figure 3
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O220AB
16P-400
diodes byt 16p
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BYT 56M diode
Abstract: byt 56m BYT56M BYT-56M BYT56A BYT56G 90V0
Text: load,derate by 20%. BYT 56A BYT 56B BYT 56D BYT 56G BYT 56J BYT 56K BYT 56M
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BYT56A
BYT56M
DO--27
STD-202
BYT 56M diode
byt 56m
BYT-56M
BYT56G
90V0
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diode byt 42m
Abstract: BYT 45 diode byt 45 diodes byt 42m BYT42M diode byt 42J BYT42A
Text: or inductive load. For capacitive load,derate by 20%. BYT 42A BYT 42B BYT 42D BYT 42G BYT 42J BYT 42K BYT 42M UNITS Maximum recurrent peak reverse voltage V RRM 50
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BYT42A
---BYT42M
DO-15
DO-15
STD-202
diode byt 42m
BYT 45
diode byt 45
diodes byt 42m
BYT42M
diode byt 42J
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1994 - PI-400
Abstract: BYT 12 DIODE BYT08
Text: BYT 08PI-200 400 FAST RECOVERY RECTIFIER DIODES VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING , 220 BYT 08PI300 300 330 400 400 440 Unit V V THERMAL RESISTANCE Symbol R th (j - c) Junction-case Parameter Value 3.5 Unit °C/W November 1994 1/5 BYT 08PI-200 400 ELECTRICAL , : Applicable to BYT 08 PI-400 only To evaluate the conduction losses use the following equations: P = 1.1 x , current Figure 2. Peak current versus form factor 2/5 BYT 08PI-200 400 Figure 3. Non repetitive
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08PI-200
O220AC
PI-400
BYT 12 DIODE
BYT08
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BYT 1000
Abstract: 43b transistor DATASHEET diode byt
Text: %. BYT 43A BYT 43B BYT 43D BYT 43G BYT 43J BYT BYT 43K 43M UNITS Maximum
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BYT43A---
BYT43M
DO-15
STD-202
BYT 1000
43b transistor DATASHEET
diode byt
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