BUZ21 L Search Results

BUZ21

Abstract: TA9854 TB334
Contextual Info: BUZ21 Semiconductor Data Sheet 19A, 100V, 0.100 Ohm, N-Channel Power MOSFET October 1998 File Number 2420.1 Features • 19A, 100V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.100Ω (BUZ21) field effect transistor designed for applications such as

buz21

Abstract: as58
Contextual Info: S G S -T H O M S O N w BUZ21 u r n N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ21 . . . . . . V R d s o h dss 100 V j 0.1 Là Id 21 A AVALANCHE RUG G EDN ESS TECHNO LO GY 100% AVALANCHE TESTED REPETITIVE AVALANC HE DATA AT 100°C LOW GATE CHARGE

BUZ21

Abstract: schematic diagram UPS din 40040 humidity
Contextual Info: rrj SCS-THOMSON 4-1% BUZ21 * 7 / . N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on •d BUZ21 100 V 0.1 ß 19 A . 100 VOLTS - FOR DC/DC CONVERTERS . H IG H CURRENT . RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) ♦ . ULTRA FAST SWITCHING

buz21

Abstract: BUZ21 L
Contextual Info: Æ 7 SCS TH O M SO N BUZ21 RiöD g^ i[L[i(g RQB S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss BUZ21 100 V ^DS(on 0.1 Ü 19 A • 100 VOLTS - FOR DC/DC CONVERTERS • HIGH CURRENT • RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) ♦

buz21

Abstract: transistor 643
Contextual Info: I • 71S1237 7 7 SG S-1H 0M S0N _ 3 0 E V # I , I QQ3D12S fa _ 6 S^THOMSON S BUZ21 CHIP [^D g^(Q [i[Lll ir^©iOgl _ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils

BUZ10A

Abstract: IEF520 T0220H BUZ63 BUZ10 BUZ11 BUZ23 BUP67 BUP68 BUP70
Contextual Info: ì> m Ö1331Ö7 0 G DDlt b3 OS? • S N L B SEM ELABE MOS TRANSISTORS Type Rei BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 BUZ10A BUZ11 BUZ11A BUZ20 BUZ21 BUZ23 B0Z24 BUZ25 BUZ31 BÜZ32 BUZ35 BUZ36 BUZ41A BUZ42 BUZ45 BUZ45 BUZ45A BUZ46 BUZ50A BUZ50A-T0220ÏÏ BUZ50B

Contextual Info: BUZ21 Semiconductor Data Sheet October 1998 19A, 100 V, 0.100 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

BUZ21

Contextual Info: BUZ21 ££ HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Package Features T O -2 2 0 A B TOP VIEW • 19A, 100V • rDS on) = 0.1 f l • SOA is Power-Dlssipation Limited DRAIN (FLANGE) • Nanosecond Switching Speeds • Linear Transfer Characteristics

BUZ21

Abstract: c0074
Contextual Info: SGS-THOMSON HUKêirMDÊi BUZ21 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 1 5 6 x 1 5 6 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 6100 A

BUZ21

Abstract: bt 109 transistor BUZ21 L T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE ! ObE D btiSBT31 D01MM23 T " PowerMOS transistor BUZ21 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , m otor control, welding,

BUZ21

Contextual Info: /= T SGS-THOMSON ^7# M g»I[LI(gre(Q i[](g§ BUZ21 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 15 6x156 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source

BUZ21

Contextual Info: / = T S G S -T H O M S O N * 7 # » » itL IIC T ß Ä O tg S B U Z 21 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V Dss BUZ21 100 V ^D S on 0.1 fi 19 A • 100 VO LTS - FOR DC/DC CO NVERTERS • HIGH CURRENT • RATED FOR UNCLAM PED INDUCTIVE

Contextual Info: BUZ 21L Infineo n t « c h n o l o g •es SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type Vds % ^DS on Package Ordering Code BUZ21 L 100 V 21 A 0.085 ü TO-220 AB C67078-S1338-A2 Maximum Ratings Parameter

BUZ21

Contextual Info: _ ObE D N AMER PHILIPS/DISCRETE • PowerMOS transistor bbS 3 T 31 0 0 1 4 4 3 3 T ■ BUZ21 t -SI-W May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUZ21

Contextual Info: SILICONIX INC 1ÖE D fc r'SiKcot. Siliconix in c o rp o ra te d h • ÖSS4735 00145*17 S BUZ21 JL M N-Channel Enhancemenr Mode Transistor T-3PI TOP VIEW TO-220AB PRODUCT SUMMARY V BRJDSS "W 0.10 100 O Id (A 19 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE

Contextual Info: _ • 7 T E T 2 3 7 O O M S bG ? Sbb ■ S 6 T H _ fZ 7 SCS-THOMSON IM g^ i[L[iO¥[RMDOS B U Z 21 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ21 ■ . . . ■ ■ . V dss R D S (on Id 100 V < 0.1 n 21 A TYPICAL RDS(on) = 0.09 Q.

Contextual Info: _ 30E 1 C T • QQ30122 b ■ / ' p j v t j S G S -T H O M S O N _ S 6 S-ThOMSON ^7# M I^ dLi©¥[^®[i^D©i) ' BUZ21 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 1 5 6 x 1 5 6 mils METALLIZATION: Top Back Al

P50N05

Abstract: p50n06 TP3055EL tp50n05e MTP36N06E
Contextual Info: N-Channel v«n n f S >« M ix ' Pd IW IM I MIX) so BUZ11 40 2 -4 30 /O 50 BUZ11A 55 2 -4 26 75 100 BUZ20 200 2 -4 1 3 .5 70 100 BUZ21 85 2 -4 21 75 50 BUZ71 100 2 -4 14 40 50 BUZ71A 120 2 -4 13 40 100 IR F 5 1 0 540 2 -4 5.6 43 100 IR F 5 2 0 270 2 -4 9.2

uis test

Abstract: BUZ45 BUZ21
Contextual Info: F=7 SCS-THOMSON “ / # » [¡» » Ë lL Iiê ïE M O Ê S TECHNICAL NOTE IMPROVED POWER MOSFET RUGGEDNESS IN UNCLAMPED INDUCTIVE SWITCHING INTRODUCTION Recent development work by SGS-Thomson has resulted in the production of POWER MOSFETs with improved performance in terms of unclamped

buz11

Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
Contextual Info: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12

BSS97

Abstract: 2SK564 BSS95 J3303 2SK616 buz349 2SK562 BUZ350 BSS98 BSS101
Contextual Info: SÉ*G siPMos«npicjnz., mííMüs-FET07r>ígíA a^\ iz)i,ammitâumæ£xyi&ÿi<D 4 IS H « ® *S S It« « A r5 *lC « fc O , r|])ALM aS-s±yV°9-M OS-FET^Z:'íífflU/c/-c j-^-ro jt* i= • e t ^ v ís ía •Z'fy+yymm m • M u ffig •-tzJb^ftCD/JvM-íb

STripFET

Abstract: k12n06 STP50N05 k12n06l MTP3055E Si4412DY STD17N06L Si9410DY Si9936DY STP55N06L
Contextual Info: STRIPFET AN UPDATE OF OUR “NE” SERIES LOW VOLTAGE POWER MOSFETs The continuous downward price pressure has forced all suppliers to optimize silicon and implement consequent product rationalization. This trend is particularly true for low voltage Power MOSFETs, where

12N60FI

Abstract: K791 a4n50e 2N60E k2n50 2SK1118 cross reference p3n90 p3n60 P6N60 TP3055EL
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE 633 2SK 955 STH V82 481 113 481 34 9 2S K 9 5 6 31 9 2SK960 2SK961 2SK962 S TH 8N 80 STP3N 60FI 2S K 1117 B U Z 80 STH V82 S TH 5N 90

BUZ78

Abstract: SIPC69N60C3 P-Channel Depletion Mosfets sipc01n80c2 SPNA2N80C2 buz22 SIPC26N60C3 SIPC26N80C3 BTS443P BTS840S2
Contextual Info: File name Products mini-PROFET BTS308 BTS409 BTS410-H2 BTS640S2 BTS443P BTS650P BTS6510 BSP762 TEMPFET / Speed TEMPFET HITFET BTS244-Z BSP78 Smart Motor Bridges + Driver ICs Bridges for Throttle Control TLE5209GP High Voltage MOSFETs CoolMOS Power MOSFETs 600V SPU01N60S5