BUZ 342 G Search Results

C67078-S3135-A2

Abstract: transistor 342 G BUZ342
Contextual Info: BUZ 342 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175˚C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 342 50 V 60 A 0.01 Ω

transistor 342 G

Abstract: buz 342 G C67078-S3135-A2 transistor 342 pf buz 342 transistor
Contextual Info: BUZ 342 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 342 50 V 60 A 0.01 Ω

Contextual Info: BUZ 342 Infine on t*c h o ologie» SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated •d v /d / rated 1 VPT051SB 2 J • Ultra low on-resistance • 175"C operating temperature D G Type BUZ 342 h Vds 60 A 50 V f lDS on 0.01 n

buz 342 G

Abstract: transistor 342 G transistor 342 pf buz 342 transistor FR 220 ph c5 diode siemens fog
Contextual Info: SIEMENS BUZ 342 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • du/df rated • Ultra low on-resistance • 175°C operating temperature Type BUZ 342 Vds 50 V h 60 A flbS on Package Ordering Code 0.01 Q TO-218 AA C67078-S3135-A2

N 341 AB

Abstract: N 344 AB BUZ22 BUZ,350 8a5c buz341 C67078-S1406-A2
Contextual Info: SIEMENS SIPMOS*Leistungstransistoren SIPMOS* Power Transistors N-Kanal-Anreicherungstypen N channel enhancement types Typ Type Bestellnummer Ordering code Gehäuse Package Bild Figure 125 C67078-S1020-A2 TO-204 AA 4 40 C67078-S1316-A2 10-220 AB 8a 40 C67078-S1316-A3

leistungstransistoren

Abstract: bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314
Contextual Info: SIEMENS Gehäuseübersicht Package Information N-Kanal Leistungstransistoren N Channel Power Transistors D i A PN \ ° s TO-220 AB *D S ^ D S o n V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 Q 10 18 23 28 m

BUP 312

Abstract: buz 91 f BUP 303 IGBT DIODE BUZ 537 BUP 203
Contextual Info: SIEMENS Typenübersicht Selection Guide Leistungstransistoren Typ Type • BUZ 10 ■ BUZ 10L ■ BUZ10S2 ■ BUZ 11 ■ BUZ11A ■ BUZ11S2 ■ BUZ 11 AL ■ BUZ 12 ■ BUZ12A ■ BUZ 12AL BUZ 20 BUZ 21 BUZ 21L BUZ 22 BUZ 30A BUZ 31 BUZ 31L BUZ 32 BUZ 40B

Contextual Info: SIEMENS BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 50 B Vbs 1000 V b 2A ^BS on 8ß Package Ordering Code TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage ^DS Drain-gate voltage '' dgr Rq s = 20 ki2

Contextual Info: SIEMENS BUZ 311 SIPMOS Power Transistor • N channel • Enhancement mode V'OS'bS i 2f Pin 2 P in i G Type BUZ 311 Vbs 1000 V b 2.5 A ^DS on 5Q Pin 3 D S Package Ordering Code TO-218AA C67078-A3102-A2 Maximum Ratings Parameter Symbol Drain source voltage

transistor BD 263

Contextual Info: SIEMENS BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Type Vds BUZ 50 B 1000 V 2A flbsion Package Ordering Code 8 Í2 TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage Vds Drain-gate voltage ^DGR Rqs = 20 k£2

bsm10gd100dn1

Abstract: BSM10GD100DN BTS 302 BSM10GD100 E6327 BUZ 324 E6288 eTS 410 siemens bsm 101 AR C67076-A2505-A52
Contextual Info: SIEMENS Typ/Bestellnummern Type/Ordering Codes Ordering code Type BRT 11 H C67079-A1000-A6 BSM 50 GAL 100 D C67076-A2002-A2 BRT 11 H Option 7 C67079-A1040-A11 BSM 50 GAL 120 D C67076-A2010-A2 BRT 11 H Option 1 + 7 C67079-A1040-A17 BSM 50 GB 100 D C67076-A2100-A2

BUP 312

Abstract: BUZ22 276 603d BUZ 81 bup300 buz171 BUP314D BUZ,350 BUZ,271 BUZ90A
Contextual Info: SIEMENS Typ Type Alphanumerische Typenliste List of Types in Alphanumerical Order Bestellnummer Ordering Code Seite Page Typ Type BUP 200 Q67078-A4400-A2 1125 • BUZ 11 A C67078-S1301 -A3 177 BUP200D Q67040-A4420-A2 1132 ■ BUZ 11 AL C67078-S1330-A3 186

IR4060

Abstract: BUZ50 C67078-A1307-A4
Contextual Info: SIEMENS BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Type Vbs to BUZ 50 B 1000 V 2A flbston 8 Í2 Package Ordering Code TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage ^DS Drain-gate voltage ''DGR

4900 SIEMENS

Abstract: buz48a 30VN C67078-A1605-A3 buz48
Contextual Info: ÖÖD 1> m fl23SbOS Q G m b 3 0 7 « S I E G 88D 14630 D 7 ’V 3 ^ ”/ 3 BUZ 48 A SIEMENS AKTIENGESELLSCHAF_ Main ratings N-Channel Draln-source voltage l^DS Continuous drain current Id Draln-source on-resistance ^DS on 500 V 6,8 A 0,8 n Description SIPMOS, N-channal, enhancement mode

Contextual Info: SIEMENS SIPMOS Power Transistor • • • N channel Enhancement mode Avalanche-rated Type ^D S JD ^ D S on BUZ 70 60 V 12 A 0.15 U Maxim um Ratings Parameter Continuous drain current, Tc = 33 “C Pulsed drain current, Tc = 25 C Avalanche current, limited by 7'jma<

BUZ MOSFET

Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8

Contextual Info: Standard Power MOSFETs BUZ 76 Füe Number 2264 N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3 A, 400 V TDS Ionl = 1 . 8 f i Features: • SOA is power-dissipation limited a Nanosecond switching speeds a Linear transfer characteristics

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

A1306 TRANSISTOR

Abstract: t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor
Contextual Info: IEMENS AKTIENGESELLSCHAF 03E J> • -fZ 3 ? - û l ÔB3SbQS DOlSfciBR û BISIEG Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancement types in plastic package T0-220 AB Typ Type ^DS max fc(max)

BSC23

Abstract: fc3h fc1h
Contextual Info: KS57C2102 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2102 single-chip CMOS microcontroller is designed for high-performance using Samsung's advanced modular development approach, SAM4 Samsung Arrangeable 4-bit Microcontrollers .Pull-up resistors are

uPD784927

Abstract: uPD784927Y uPD784928 uPD78F4928 uPD78F4928GF-3BA uPD78F4928Y circuit diagram for sony tv 4 kv bipolar PROM CL21 584 j sony ccdd 2.5
Contextual Info: Preliminary User’s Manual µPD784928, 784928Y Subseries 16-bit Single-chip Microcontrollers Hardware µPD784927 µPD78F4928 µPD784927Y µPD78F4928Y Document No. U12648EJ2V0UM00 2nd edition Date Published June 1998 N CP(K) Printed in Japan 1997 [MEMO]

Central NEC AK 824

Abstract: sony capstan motor st stt 128 two pole stepping motor 180 iv watch uPD78F4928 uPD78F4928GF-3BA uPD78F4928Y uPD784927 uPD784927Y uPD784928
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

i7238

Abstract: u2164 u2117 u2147 IR LED and photodiode FLASHER SEQUENTIAL LED U2146 ARM720T u2137 EP7212
Contextual Info: EP7309 Data Sheet FEATURES High-Performance, Low-Power System on Chip Enhanced Digital Audio Interface • ARM720T Processor — ARM7TDMI CPU — 8 KB of four-way set-associative cache — MMU with 64-entry TLB — Thumb code support enabled ■ Ultra low power