leistungstransistoren
Abstract: bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314
Contextual Info: SIEMENS Gehäuseübersicht Package Information N-Kanal Leistungstransistoren N Channel Power Transistors D i A PN \ ° s TO-220 AB *D S ^ D S o n V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 Q 10 18 23 28 m
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o-220buz12abuz11s2buz10s2+13o-218346s2bup410dleistungstransistorenbup314dbuz 342 gsiemens 230 95 obup 307dbuz,350buz,271bup400dbup313dbup314
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N 341 AB
Abstract: N 344 AB BUZ22 BUZ,350 8a5c buz341 C67078-S1406-A2
Contextual Info: SIEMENS SIPMOS*Leistungstransistoren SIPMOS* Power Transistors N-Kanal-Anreicherungstypen N channel enhancement types Typ Type Bestellnummer Ordering code Gehäuse Package Bild Figure 125 C67078-S1020-A2 TO-204 AA 4 40 C67078-S1316-A2 10-220 AB 8a 40 C67078-S1316-A3
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c67078-s1020-a2c67078-s1316-a2c67078-s1316-a3c67078-s1348-a2+13c67078-s1350-a2c67078-s1351-a2c67078-s1352-a2c67078-s1353-a2c67078-s3125-a2c67078-s3120-a2n 341 abn 344 abbuz22buz,3508a5cbuz341c67078-s1406-a2
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DIODE BUZ
Abstract: sis 661
Contextual Info: SIEMENS BUZ 346 SIPMOS Power Transistors • • • N channel Enhancement mode Avalanche-rated Ordering Code Tc ^DS on Package 1> 58 A 73 °C 0.018 n TO -218 AA C67078-S3120-A2 58 A 73 ‘ C 0.018£2 TO -218 AA C67078-S3120-A 4 Type VDS ¡a BUZ 346 50 V
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c67078-s3120-a2c67078-s3120-adiode buzsis 661 |
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BUP 312
Abstract: buz 91 f BUP 303 IGBT DIODE BUZ 537 BUP 203
Contextual Info: SIEMENS Typenübersicht Selection Guide Leistungstransistoren Typ Type • BUZ 10 ■ BUZ 10L ■ BUZ10S2 ■ BUZ 11 ■ BUZ11A ■ BUZ11S2 ■ BUZ 11 AL ■ BUZ 12 ■ BUZ12A ■ BUZ 12AL BUZ 20 BUZ 21 BUZ 21L BUZ 22 BUZ 30A BUZ 31 BUZ 31L BUZ 32 BUZ 40B
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buz10s2buz11abuz11s2buz12a+7o-220o-218bup 312buz 91 fbup 303 igbtdiode buz 537bup 203
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BUZ332A
Abstract: BUZ54A BUZ,350 BUZ p channel BUP 312 BUZ,271 Buz94 BUZ357 buz 91 f BUZ345
Contextual Info: Typenübersicht Selection Guide SIEM ENS SIPMOS Power Transistors N Channel Power Transistors s > 7 X s TO-220 AB ^D S ^ D S o n V Q 50 50 50 50 50 50 50 50 50 18m 28m 30m 35m 40m 55m 70m 0.1 0.12 60 60 60 60 60 18m 40m 70m 0.10 0.15 100 100 100 100 100
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vut05152o-220o-218o-204+11346s2buz332abuz54abuz,350buz p channelbup 312buz,271buz94buz357buz 91 fbuz345
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buz 342 G
Abstract: DIODE BUZ z347 BUP 312 diode z104 z349 z332a IGBT P213 DIODE BUZ 300 buz91a
Contextual Info: Gehäuseübersicht Package Information N-Kanal Leistungstransistoren Forts. N Channel Power Transistors G D S G TO-220 AB VDS V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 RDS(on) Ω 10 m 18 m 23 m 28 m 30 m
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o-220o-218346s2buo-218+10buz 342 gdiode buzz347bup 312diode z104z349z332aigbt p213diode buz 300buz91a
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buz 350 equivalent
Abstract: BUP 203 transistor buz 36 BUP 312 BUP 304 leistungstransistoren bup 401 datasheet transistor buz 350 bup 213 BUP 309
Contextual Info: Typenübersicht Selection Guide • Leistungstransistoren Forts. ■ Typ VDS ■ Type V 50 50 60 50 50 60 50 50 50 50 100 100 100 100 200 200 200 200 500 500 500 1000 1000 1000 1000 400 400 400 60 60 50 50 50 ■ BUZ 10 ■ BUZ 10L ■ BUZ 10S2 ■ BUZ 11
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o-220o-218buz 350 equivalentbup 203+8transistor buz 36bup 312bup 304leistungstransistorenbup 401 datasheettransistor buz 350bup 213bup 309
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