BUX 51 Search Results

transistor bux 39

Abstract: transistor BUX BUX51 bux THOMSON bux c BUX51N NPN BUX51 BUX 51 transistor BUX 51
Contextual Info: BUX 51 BUX 51 N NPN SILICON TRANSISTOR, TRIPLE DIFFUSED MESA T R A N S IS TO R N P N S IL IC IU M , M ESA T R IP L E D IF F U S E TENTATIVE DATA N O T IC E P R O V IS O IR E Driver stage for high voltage power transistor 160 V BUX 51 N 200 V (BUX 51) 3,5

BUX86

Abstract: BUX87 Q68000-A3870 Q68000-A5167 S400
Contextual Info: 25C J> • ÖEBSbQS 00QMÖ72 3 « S I E G • j^35-Of NPN Silicon High Voltage Switching Transistors BUX 86 BLfX 87 - SIEMENS AKTIENüESELLSCHAF - BUX 86 and BUX 87 are NPN silicon epibase power switching transistors in TO 126 plastic

BUX 84 circuits

Abstract: BUX48 BUX48A application transistor BUX 48 1N4934 2N3763 2N6339 2N6438 BUX48A MM3735
Contextual Info: ON Semiconductort BUX48 BUX48A SWITCHMODEt II Series NPN Silicon Power Transistors The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated

Contextual Info: BUX48 SWITCHMODEt II Series NPN Silicon Power Transistors The BUX 48/BUX 48A transistors are designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line−operated SWITCHMODE applications such as:

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

transistor bux 48a

Abstract: BUX48A application 1N4934 2N3763 2N6339 2N6438 BUX48 BUX48A MM3735 MR854
Contextual Info: MOTOROLA Order this document by BUX48/D SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

transistor BUX 48

Abstract: 1N4934 2N3763 2N6339 2N6438 BUX48 BUX48A MM3735 MR854 transistor bux 48a
Contextual Info: MOTOROLA Order this document by BUX48/D SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

BUX51

Abstract: transistor 3005 ET 3005 transistor bux 39 transistor 3005 2 NPN BUX51 transistor BUX 22 bux c pilote 5mhz L 3005 TRANSISTOR
Contextual Info: BUX 51 BUX 51 N NPN S ILIC O N TR A N S IS TO R , T R IP L E D IF F U S E D MESA T R A N S IS T O R N P N S IL IC IU M , M E S A T R IP L E D I F F U S E T E N T A T IV E D A T A N O T I C E P R O V IS O IR E Driver stage fo r high voltage power transistor

BUX348PF

Contextual Info: S E t l E L A B L T D 3 7 E ]> 0 1 3 3 1 0 7 Q 0 0 0 2 2 2 SEMELAB JUL 0 6 1988 BUX 348PF NEW PRODUCT NPN PLANARTRANSISTOR MULTI EMITTER ION-IMPLANTED FOR FAST SWITCHING APPLICATIONS MECHANICAL DATA Dimensions in mm FEATURES 200 50 • HIGH BREAKDOWN VOLTAGE

BUX 127

Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
Contextual Info: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B

SDT 9202

Abstract: bdx 338 BU 450 bdx
Contextual Info: ALPHANUMERIC BC 107. .73 BC 108. .73 BC 109. .73 BC 170. .74 BC 171. .74 BC 172. .74 BC 173. .74 BC 174. .74 BC 177. .73 BC 178. .73 BC 179. .73 BC 190. .73 BC 237. .74 BC 238. .74 BC 239. .74 BC 250. .74

BUD48DI

Abstract: BUD48 BUV41 BUX 115 BUV18 BUD 48 D44Q5 BUW38 BUV26 BUV40
Contextual Info: SGS-THOMSON M0 glJ3 ILdOT©[ l(SS GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR FAST SWITCHING TRANSISTORS AND DARLINGTONS Internal schematic diagrams Darlingtons except BUD 48 Dl Bipolar transistors 120 / 300 V VCBO RANGE •c Vc b O v CEO ptot <A) (V) (V)

BC 641

Abstract: bc 207 npn BC190 bu 1011 ET 3005 h21e BU 208 BC140 BC190B bc107
Contextual Info: Silicon N PN transistors, general purpose continued Tam b = 25 <>C Transistors N P N silicium, usage général (suite) <5 v CEO Case ^tot (mW) (V) h2 lE VcER* h2 lE * VCE X ° min >C v CEsat (V) max ImA} ft (ns) (MHz) 'off* max max l C/lB (mA> min TSi 76

SSY20

Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
Contextual Info: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen­ Vorzugs­ anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3

BUD48

Abstract: BUD48DI BUD 48 BUX23 BUV41 BUV40 BUW38 BUW52 bux348 TR MJE 350
Contextual Info: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL M0 glJ3 ILdOT©[ l(SS POWER BIPOLAR FAST SWITCHING TRANSISTORS AND DARLINGTONS Internal schematic diagrams Darlingtons except BUD 48 Dl Bipolar transistors 120 / 300 V VCBO RANGE •c Vc b O v CEO ptot <A) (V) (V)

BDX 241

Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905
Contextual Info: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide

sf 818 d

Abstract: NPN 337 SU 179 sf 819 d SF 127 Funkamateur SMD NF sf 118 d sd 339 NF 847 G
Contextual Info: IC, ICsat [mA, A ] 600 -100 -100 -100 -100 100 100 100 100 100 100 -100 -100 -100 100 100 100 -100 -100 -100 (1) (-1) (1) (-1) (1) (-1) (3) (1,5) (-1,5) (1,5) (-1,5) (1,5) (-1,5) * [MHz] ≥ 250 90 90 90 90 ≥ 300 ≥ 300 145 145 161 175 350 350 350 185

Transistoren DDR

Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
Contextual Info: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60

LTLS

Abstract: 2n2891 2N 3055 BDX 78 2N5415 2N5416 BDY71 2n3738 2n3055 2n3053
Contextual Info: metal power transistors O transistors de puissance métalliques Type v CEO •c h21E P to t ! Ic THOMSON-CSF VCE sat cont NPN min PNP (V) (A) / Ib max m ax (Al (W) 11 (V) (A) (A) td + tr ts tf typ * ty p * max m ax m ax M> (us) ip*) s w itc llin g tran sisto rs

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

BUX47A

Abstract: BUX47 BUX47B BY205-400
Contextual Info: T E X A S I N S T R -COPTO} Ô3&1726 T e x a s b5 instr DE | 0 T b l 7 5 b 003t.b41 fc, D 62C 36641 <o p t o > B U X 4 7, B U X 4 7A , BU X47B N-P-N SILICON POW ER TRANSISTORS 3 3 ' S 3 REVISED OCTOBER 1 9 8 4 125 W at 2 5 ° C Case Temperature 9 A Continuous Collector Current

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

tt 2194

Abstract: LTLS 2n3054 2N5415 2N2243 aa2n BUX54 2N2192 2N2195 2N5416
Contextual Info: metal power transistors O transistors de puissance métalliques Type v CEO •c h21E P to t ! Ic THOMSON-CSF VCE sat 11 / Ib td + tr NPN min PNP (V) (A) max m ax (Al (W) (V) (A) (A) tf ty p * max m ax m ax min M> (us) ip *) (M H z) s w itc llin g tran sisto rs

2N2243

Abstract: H21E 2N3439 pnp case to-39
Contextual Info: CB 7 (CB 6) S ilicon N P N transistors, general purpose T g m b -2 5 T ra n s is to rs N P N s ilic iu m , usage g én é ra ! v CEO (V) Case h 2 iE fT (MHz} *s (ns) •c v CEsat (V) <mA) max 60 150 1,5 150/15 40 61 120 150 1,5 150/15 50 61 20 60 150 5 150/15