BTS 131 SMD Search Results

B34 SMD Transistor

Abstract: BTS432D e3040 C67078-S5303-A3 C67078-S5303-A6 432F smd DIODE B34 BTS432F BTS 131 SMD E3040 C67078-S5303A3
Contextual Info: SIEMENS BTS 432 D PROFET • • • • • High-side switch Short-circuit protection Overtemperature protection Overload protection Load dump protection • • • • • • • • • • Undervoltage and overvoltage shutdown with auto-restart and hysteresis

PEF 24628

Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by

BTS 131 SMD

Abstract: BTS 129 SMD
Contextual Info: SIEMENS TEMPFET BTS121A Features • • • • • N channel Logic level Enhancem ent mode Tem perature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 2 3 G D S R efer to circuit design hints see chapter Technical Inform ation

Contextual Info: ÖE35b05 OOfllBOñ bñT SIEMENS HITFET BTS 149 Smart Lowside Power Switch Features Product Summary • • • • • • • • • Continious drain source voltage On-state resistance Current limitation Load current ISO Clamping energy Logic Level Input

bts 4320

Contextual Info: SIEMENS BTS 432 D PROFET • • • • • High-side switch Short-circuit protection Overtemperature protection Overload protection Load dump protection • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Reverse battery protection

Contextual Info: • flZ35b05 0 1 ü 3 3 ,ï 3 74fl SIEM ENS TrilithIC BTS 774 Preliminary Data Overview Features • • • • Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications Ultra low i ? D S 0 N @ 25 "C:

H3B SMD code

Abstract: BTS 131 SMD BTS 129 FC34 transistor smd H3b
Contextual Info: • 0235 bD 5 □ 1 0 3 3 ,ì 3 7HÖ SIEMENS T rilithIC BTS 774 P re lim in a ry D ata Overview Features • • • • • • • • • • • • • • • • • Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications

smd transistor hA

Abstract: BTS 131 SMD S5305 SIEMENS BST smd code t04 transistor SMD t04 410D 410E 410F BTS410
Contextual Info: SIEMENS BTS410D PROFET • • • • • High-side switch Short-circuit protection Overtemperature protection Overload protection Load dump protection1 • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Reverse battery protection v

BCM 4336

Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06

6B5 diode

Abstract: 5B2 rectifier 5D6 diode 06032R104K7B20D diode 10A6 6B5 SOT23 UB04 rj48 to db9 b v3.3 DS26521DK
Contextual Info: DS26521DK Single T1/E1/J1 Transceiver Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26521DK is an easy-to-use evaluation kit for the DS26521 T1/E1/J1 single-chip transceiver SCT . The DS26521DK is intended to be used as a standalone system. The board comes complete with a

diode 6a6

Abstract: 6A6 DIODE RJ48 BTS 132 SMD NTH069A3 rj48 to db9 smd 5b1 smd transistor 6c5 2D4 SMD DS10
Contextual Info: DS26503DK T1/E1/J1 BITS Element Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26503DK is an easy-to-use evaluation board for the DS26503 T1/E1/J1 BITS element. The DS26503DK is intended to be used as a stand-alone design kit. The board is complete with a DS26503

smd transistor 6c5

Abstract: 6A6 DIODE XCF01SV020C smd transistor 8a7 Transistor 6C5 5b1 smd transistor diode 6a6 C65 004 RJ48 smd 5b1
Contextual Info: DS26503DK T1/E1/J1 BITS Element Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26503DK is an easy-to-use evaluation board for the DS26503 T1/E1/J1 BITS element. The DS26503DK is intended to be used as a stand-alone design kit. The board is complete with a DS26503

6A6 DIODE

Abstract: RJ48 DS26504 diode 6a6 smd 5c2 12D3 C65 004 EB1100 smd 5b1 smd transistor 6c5
Contextual Info: DS26504DK T1/E1/J1/64K/8KCC BITS Element Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26504DK is an easy-to-use evaluation board for the DS26504 T1/E1/J1/64K/8KCC BITS element. The DS26504DK is intended to be used as a standalone design kit. The board is complete with a

XCF01SV020

Abstract: 6A6 DIODE 12b3 diode saronix 88 xtal osc 08 6B5 diode C65 004 6c5 g 6C5 smd diode 6a6 0805 led bicolor
Contextual Info: DS26502DK T1/E1/J1/64KCC Bits Element Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26502DK is an easy-to-use evaluation board for the DS26502 T1/E1/J1/64KCC BITS element. The DS26502DK is intended to be used as a standalone design kit. The board is complete with a

smd transistor 6c5

Abstract: 5a6 sot23-6 RB37 smd 8a6 RB36 1c7 diode RB39 5D6 diode smd R05 4pin 10B8
Contextual Info: DS26522DK Dual T1/E1/J1 Transceiver Demo Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26522DK is an easy-to-use demo kit for the DS26522 T1/E1/J1 dual transceiver. The DS26522DK is a stand-alone system. The board comes complete with a transceiver, transformer,

mov rdn 240

Abstract: AD73311 MOV RDN 240/ 20 pc 525 1109PHCT-ND ic 7408 AND GATE IC WORKING LM338AT marking L6A SMD 3825 LED C57A
Contextual Info: EB401 Evaluation Board User’s Guide Preliminary This document is preliminary. As such, it contains data derived from functional simulations and performance estimates. LSI Logic has not verified either the functional descriptions, or the electrical and mechanical specifications using

transistor SMD 1p4

Abstract: KDS IR Sensor 4 MHZ KDS 6b transistor smd 4ss 410F2 C67078-A5007-A9 siemens nox sensor siemens bts 130 BTS 432 D2 E3043 BTS121A
Contextual Info: x | P j y j E M C •r / i n r c T im r r c i “ b t c d io • Enhancement mode T "« i w«« + i 1 »*/¡+l^ /^k n r / - \ v\ /•* v Tem I ci I ip perature c i cuui c dei sensor lövji w in I u iy iid iu i 0 1 icii a u ic i iouo • The drain pin is eiectricaNy shorted to the tab

PD57002

Abstract: PD57002S AN1294 0137 0904 907 TRANSISTOR smd
Contextual Info: PD57002 PD57002S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 2 W with 15 dB gain @ 960 MHz / 28 V • NEW RF PLASTIC PACKAGE

AN1294

Abstract: PD57002 PD57002S BTS 472 E 0927 TRANSISTOR
Contextual Info: PD57002 PD57002S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 2 W with 15 dB gain @ 960 MHz / 28 V • NEW RF PLASTIC PACKAGE PowerSO-10RF

BTS 132 SMD

Contextual Info: PD57002-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 2 W with 15dB gain @ 960 MHz / 28 V ■ New RF plastic package

p 945

Abstract: AN1294 PD57002 PD57002S 0918 158 BTS 132 SMD
Contextual Info: PD57002 PD57002S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 2 W with 15 dB gain @ 960 MHz / 28 V • NEW RF PLASTIC PACKAGE PowerSO-10RF

BTS 132 SMD

Abstract: AN1294 J-STD-020B PD57002-E PD57002S-E
Contextual Info: PD57002-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 2 W with 15dB gain @ 960 MHz / 28 V ■ New RF plastic package Description

BTS 132 SMD

Abstract: J-STD-020B PD57002-E PD57002S-E AN1294
Contextual Info: PD57002-E PD57002S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 2 W with 15dB gain @ 960 MHz / 28 V ■ New RF plastic package Description

PD57002-E

Abstract: BTS 132 SMD PD57002S PD57002S-E AN1294 JESD97 PD57002
Contextual Info: PD57002-E PD57002S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 2W with 15dB gain @ 960MHz / 28V ■ New RF plastic package