DDS47 Search Results

Contextual Info: MITSUBISHI LSIs M5M4V4169TP-15,-20 4M 256K-WORD BY 16-BIT CACHED DRAM WITH 16K(1024-WORD BY 16-BIT)SRAM DESCRIPTION The M5M4V4169TP is a 4 M - b it Cached DRAW which integrates input registers, a 262, 1 4 4 - word by 1 6 - bit dynamic memory array and a 1024-w o rd by 1 6 - bit static

B34 SMD Transistor

Abstract: BTS432D e3040 C67078-S5303-A3 C67078-S5303-A6 432F smd DIODE B34 BTS432F BTS 131 SMD E3040 C67078-S5303A3
Contextual Info: SIEMENS BTS 432 D PROFET • • • • • High-side switch Short-circuit protection Overtemperature protection Overload protection Load dump protection • • • • • • • • • • Undervoltage and overvoltage shutdown with auto-restart and hysteresis

Contextual Info: HM678127UH Series Under development 13 10 72 -w o rd s x 8 -b its High S p eed S tatic A ccess M em ory Features Pin Arrangement • 131072-words x 8-bits organization • Directly TTL compatible input and output • C hoice o f 5.0 V or 3.3 V pow er supplies for

smd zener diode code AST

Abstract: 432D smd transistor GY BTS432E E3040 432F E3043 m 147 smd transistor siemens FLH BTS432F
Contextual Info: SIEMENS BTS 432 E PRÜFET • • • • • High-side switch Short-circuit protection Overtemperature protection Overload protection Load dump protection • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Reverse battery protection

Contextual Info: r Z 7 SCS-THOMSON M54HC182 M74HC182 FUNCTION LOOK AHEAD CARRY GENERATOR • HIGHSPEED tPD = 14 ns TYP. at Vcc = 5 V ■ LOW POWER DISSIPATION Icc = 4 |iA (MAX.) at T a = 25 °C ■ HIGH NOISE IMMUNITY V nih = V nil = 28 % V c c (MIN.) ■ OUTPUT DRIVE CAPABILITY