BT 35 TRANSISTOR Search Results

100 amp npn mosfet

Abstract: 100 amp mosfet 400v 20 amp mosfet 500V 25A Mosfet pnp 500v OM8001SC OM8002SC OM8003SC OM8004SC OM803
Contextual Info: T M3E D bTÛ'JÜTB OOQQSTb 7 IOMNI OM 8OOISC OM8003SC OM8002SC OM8004SC POWER MOSFET WITH GATE DRIVE CIRCUIT IN 6-PIN HERMETIC PACKAGE OMNIREL CÔRP 100V Thru 500V, Up To 35 Amp, N-Channel MOSFET With Low Power Gate Drive Circuitry FEATURES • Isolated Hermetic Package

Q68000-A4334

Contextual Info: UT 32E D • fi23b3S0 QQlVSl'l 5 « S I P NPN Silicon Switching Transistors SIEMENS/ SP C L i SEMICONDS _ SMBT 2222 SMBT 2222 A r - 3 5 " -;f • • • High D C current gain 0.1 to 500 mA Low collector-emitter saturation voltage Complementary types: S M B T 2907, S M B T 2907 A PNP

siemens 250 87

Contextual Info: 32E D • A23b32G 001724^ □ « S I P PIMP Silicon Transistors SIEMENS/ SPCL-, SEMICONDS _ • For A F input stages and driver applications • High current gain • Low collector-em itter saturation voltage • Low noise between 30 Hz and 15 kHz

Bt 35 transistor

Abstract: Bt 35 F transistor
Contextual Info: MCC BC847AT, BT, CT
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# NPN Surface Mount Small Signal Transistor 150mW Features • • • Epitaxial Die Construction Complementary PNP Type Available BC857AT,BT,CT

Contextual Info: MCC TM Micro Commercial Components BC847AT, BT, CT
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# NPN Surface Mount Small Signal Transistor 150mW Features • • • Epitaxial Die Construction

3904S

Abstract: wi fi marking code transistor HK
Contextual Info: SIEMENS SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 ^ ^ • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SM BT 3906S (PNP)

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC847AT, BT, CT NPN Surface Mount Small Signal Transistor 150mW Features x x x x Epitaxial Die Construction

NPN transistor 2n2222A plastic package to116

Abstract: SP3725QDB BT2907A 2N5146 2N3244 2N3245 2N3252 2N3253 2N3444 2N3467
Contextual Info: Transistors Cont. Discrete Devices Space Saving Devices Maximum Ratings Electrical Characteristics @ 25° C Am bient P q Type Polarity One Both Side Sides mW mW VCB Volts Vce Volts V eb Volts Min/Max Frequency V c e (Sat) @ i c /i B H f e @ ic mA Volts Package

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC847AT, BT, CT NPN Surface Mount Small Signal Transistor 150mW Features x x x x Epitaxial Die Construction

Contextual Info: MCC TM Micro Commercial Components BC857AT, BT, CT
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x x • PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Epitaxial Die Construction For Switching and AF Amplifier Applications

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC847AT, BT, CT Features NPN Surface Mount Small Signal Transistor 150mW • • Halogen free available upon request by adding suffix "-HF"

transistor f420

Abstract: transistor BJ 115 F420 transistor t514 TRANSISTOR ZT 5551 2SK67A transistor bt 667 TCA561 2S30 T010
Contextual Info: NEC j m^Tiytn A Junction Field Effect Transistor 2SK67A E C M 4 > tf- ? > X N-Channel Silicon Ju n ctio n Field Effect Transistor ECM Im pedance C onverter W-mm/ P A C K A G E D IM E N S IO N S o M 'm m t T t o Unit : mm t ItMMTto OECM-i > o Y - h 2 .9 ± 0.2

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC847AT, BT, CT NPN Surface Mount Small Signal Transistor 150mW Features • Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: MCC TM Micro Commercial Components BC847AT, BT, CT
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features NPN Surface Mount Small Signal Transistor 150mW • • Halogen free available upon request by adding suffix "-HF"

603 transistor npn

Abstract: 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906
Contextual Info: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) Device Allegro Type Type

Contextual Info: PMBT2222 PMBT2222A J v _ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic package intended for switching and linear appli cations in thick and thin film circuits.

biss 0001

Abstract: PBLS1504V PEMD4 PEMD15 PEMH15 PEMH24 PBLS1503V PEMD6 PEMB10 PMZ250UN marking
Contextual Info: NXP ultra-small diodes and transistors for portable applications Downsize the footprint, boost the performance At NXP, our comprehensive portfolio of ultra-small diodes and transistors enables high performance in increasingly small portable electronics. We safeguard sensitive ICs with advanced

Y25n120d

Contextual Info: MOTOROLA O rder this docum ent by M G Y25N120D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G Y 25N 120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 6 4

MS 600 35

Abstract: ECG3300 ECG3320 ECG3322 ECG3303 IGBT 200 A ECG3311 TR IGBT tr06 ECG3301
Contextual Info: Insulated Gate Bipolar Transistors IGBT ECG Type Description Collector DC to Emitter Collector Voltage Current Iq V CES A mps E C G 3 3 00 IGBT, N-Ch A Enhancement 400 10 Gate to Emitter Cutoff Voltage v GE(th) Gate to Emitter Voltage V G ES ±25 Collector to

transistor F370

Abstract: t430 transistor T591 transistor T600 t514 TRANSISTOR ic mt 5380 transistor T700 ir43 2SC1674 Transistor 2sC1674
Contextual Info: NEC j m ^ T iv rx A ij F M f a - t R F , M IX . , h ^ C O N V . , X ^ O S C ./ B NPN Silicon Epitaxial Transistor FM Tuner RF, MIX., CONV., OSC. o F M f a - j- c o m m 'it m m , M W L&&&M , m m m m W B 0 / PACKAGE D IM EN SIO N S t i r Unit : mm f t M T ’t o

10H125

Abstract: HDR2X25 Transistor 6C5 to92c equivalent transistor 2n3704 2N3704 MOTOROLA 2N3704 NATIONAL SEMICONDUCTOR 5D2 6 ICL8069DCZR 6c2 transistor
Contextual Info: Harris Semiconductor No. AN9743 Harris Multimedia July 1997 The HMP8154EVAL1 Encoder Evaluation Platform Author: Steven Martin Features board includes an encoder, voltage references and decoupling, analog output filters, and I/O connectors. • HMP8154 Video Encoder

10h125

Abstract: HDR2X25 Transistor 6C5 DSUB25ST 10h125_plcc BERG 40 pin single row header housing bt.656 interface PLCC-44 molex CCIR-656 HMP8154
Contextual Info: The HMP8154EVAL1 Encoder Evaluation Platform Semiconductor Application Note July 1997 AN9743 Author: Steven Martin Features board includes an encoder, voltage references and decoupling, analog output filters, and I/O connectors. • HMP8154 Video Encoder • Digital Parallel ITU-R BT.656 Input

2N3014 TO-18

Abstract: 2N5769 2N2369 2N2369A 2N3013 2N5224 BSV52 BSX39 MMBT4274 MMBT5134
Contextual Info: NATL SEfllCOND DISCRETE 22E D Bi ^501130 QG377ÖQ 2 • *7Zi2'7~0/ NPN Switching Transistors by Ascending Vceo Vceo (V) Min Vcbo (V) Min Vce(8at) (V) M ax @ Ic/lb (mA) Cob (pF) M ax Ft (MHz) M ax *(off) (ns) M ax M M BT5134 PN5134 10 10 20 20 0.25 0.25 10/1.0

100BASE-FX

Abstract: LXT970 LXT982 LXT982A
Contextual Info: DATA SHEET FEBRUARY, 1999 LXT982/982A Revision 1.2 Single-Speed, 5-Port Fast Ethernet Repeater for 100BASE-TX/FX Applications General Description Features The LXT982 is a 5-port 100 Mbps Class II Repeater that is fully compliant with IEEE 802.3 standards. Four ports