2S30 Search Results

2S301

Abstract: 2S301A
Contextual Info: 2S301A Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.

2S306A

Contextual Info: 2S306A Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.

2SB641

Abstract: BC181 3SM diode CS9012 SF158 2S302 LOW-POWER SILICON PNP 2N924 BCZ10 HA9048
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30

Contextual Info: MFG. IDENT. C ODE 1 .4 ^ 7 M A X .*» .900 .•a-rs rA 'sm a " JA C K ,06% 1 N- "Ilf ÏÎ Ï B -z" U l/A-3G» UMS-t A^< ,300 ' • . 1 5 0 HEX. S/M No. 2S30-6OO3 _ _ L_: MECHANICAL 1. Materials All metal parts except contact and crimp ring - Stainless Steel per QQ-S-764, Type

2S307A

Contextual Info: 2S307A Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.

2SB641 r

Abstract: 2SB641 2N3633 2N3608 2N3588 BC381 2N3642 3SM diode LOW-POWER SILICON PNP 2N3524
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30

Contextual Info: R E V IS IO N S ZONE LTR DESCRIPTION EC O DATE c 22863 REDRAWN, UP-DATED i ,2 5 0 HEX APPROVED C O R R E C T E D “' / ¿ / W r 7 D '2S302 ITEM *4 MAT’ L-iVAvS: P H O S P H O R B R O N Z E ~ Q Q -8 - 7 5 0 " " - ; e ;& S 3 7 H EM iM 40161

2S304A

Contextual Info: 2S304A Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.

2S303A

Contextual Info: 2S303A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 25V 0.41 (0.016) 0.53 (0.021)

2S302 TEXAS INSTRUMENTS

Abstract: 2S301 2s302 CV7152 2S307 CV7151 CV7344 TO-5 CV7346 pnp transistor cv7341
Contextual Info: Discrete Semiconductors if T e x a s I n s t r u m e n t s Silicon A llo y PIMP Transistors CV Number CV7151 CV7152 CV7341 CV7342 CV7343 CV7344 CV7345 CV7346 CV7366 CV7396 CV7598 Nearest Commercial Equivalent 2S 302/3 2S301 2S 302/3 2S 302/3 2S 3 02 /3 2S301

2N4007 diode

Abstract: Transistor NEC 12d KT501A 2U diode PB6015A PB6015B KT209B 2u 85 kts3103b 2SA1362Y
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number HA7806 HA7808 HA7808 MPSH69 2N2005 2N2334 2N2335 2N3318 2N917 2Nl024 10 ~~~~;~ 2S3021 2S3021 2N2004 2N1228 2N2370 2N2372 2S3221 2Nl027 15 20 ~~~~H 2N862 KT209A KT501A KT501B BCY49 2N1229 2N4007 A5T5221 2N5221 2N995

Contextual Info: 2S303A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 25V 0.41 (0.016) 0.53 (0.021)

2N4355

Abstract: KT209 BCY29 2SA546 LOW-POWER SILICON PNP 2N1475 KT209M
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 5 10 15 20 25 30 35 40 45 50 2N1474 BCY11S 2N1232 2N927 BCZ12 2N2595 2N2S01 2S301 2N1474A ST8509 KT209L KT501L BC143 BC343 BC287 BCY29 BCY29 PN4354 2N4354 2N3072 2N3073 ESMS38 2SA546 2N4030 BFR80 SHA7538 2N1233

ES76

Abstract: 2S309 4 port combiner
Contextual Info: m m m m m INTELSAT requirements for standard F-2, F-1. D, E-3, E-2. E-1 and G stations. ¡SSI EUTELSAT requirements for pattern iTU-R and polarization discrimination. U.S. FCC regulation 2S309, for mandatory pattern • t h M M u a k u A diM A ik lf M re

TTL 7474

Abstract: TTL 7475 7475 ttl 2S3020 2S3021 2S3022 2S3023 2S3024 PIN DIODE SPDT DRIVER CIRCUITS
Contextual Info: VS M PRODUCT FEATURE "SMA" FEMALE FIELD REPLACEABLE 2S3020 SERIES SPDT SWITCHES +5 P/N 2S3020 ( 2 - 18 GHz ) Integral TTL Drivers Reduced Harmonics Removable Connectors -55°C to +125°C Operation VS M J1 J2 DC PINS .018 DIA x .13 LG IN .75 .09 TYP. .20

PIN DIODE SPDT DRIVER CIRCUITS

Abstract: 2S3020 2S3021 2S3022 2S3023 2S3024 06810TEL GD 160B
Contextual Info: VS M PRODUCT FEATURE "SMA" FEMALE FIELD REPLACEABLE 2S3020 SERIES SPDT SWITCHES +5 P/N 2S3020 ( 2 - 18 GHz ) Integral TTL Drivers Reduced Harmonics Removable Connectors -55°C to +125°C Operation VS M J1 J2 DC PINS .018 DIA x .13 LG IN .75 .09 TYP. .20

2S303

Contextual Info: 2S303A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 25V 0.41 (0.016) 0.53 (0.021)

BCY31

Abstract: 2S303 2S301 BCY34 2S302 BCY32 CV7344 BCY30 2S302/3 2S304
Contextual Info: Silicon Alloy Transistors M Case Outline Silicon A lloy PNP General Purpose Uu 0> Device Type un 1 4 = ¡0 0-23 -6 6 " 38 05 min - Dimensions in mm TO-5 2S301 2S302 2S303 2S304 2S305 BCY30 BCY31 BCY32 BCY33 BCY34 2S3010 2S3020 2S3030 2S3040 Case Outline TO-5

2S302A

Contextual Info: 2S302A Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.

BC137

Abstract: LM3661TL-1.40 G2025 LOW-POWER SILICON PNP ST8500 BC137 800 BCY90 NB021 BCY91 2N85
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 NB023FL NB023FZ 2N4285 2SA987F NB021EV NB021FV NB023EV NB023FV 2SA987E 2SA880 ~~~j~~ 15 20 25 30 35 40 2SA721 2N1223 2S3010 2S3010 2N4937 2N4938 2N4939 2N4940 2N4941 2N4942 2N935 2S3210 2N5110 TIPP32 2S3020

BC377

Abstract: 2N918CSM
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES T yp eN o 2N918 2N918ACSM 2N918AQF 2N918CSM 2N929 2N930 2N930A 2N930CSM 25012 25013 2S013A 25024 25025 25026 25033 25034 25035 25036 25103 25104 2S301A 2S302A 2S303A 2S304A 2S305A 2S307A B DX70 BAS 16CSM

1240 ringer

Contextual Info: Temic U3760MB Semiconductors Low-Voltage Standard Telephone Circuit Description TEMIC’s low-voltage telephone circuit, U3760MB, performs all the speech and line interface functions required in an electronic telephone set tone ringer, pulse and DTMF dialing with redial.

3S1000FG456-4C

Abstract: PCI64 vhdl code for 8 bit parity generator vhdl code for parity checker 2-S200
Contextual Info: LogiCORE PCI64 Interface v3.0 DS205 April 14, 2003 Introduction LogiCORE Facts With the Xilinx LogiCORE PCI Interface, a designer can build a customized PCI 2.3-compliant core with the highest possible sustained performance, 528 Mbytes/sec. Features •

2S100

Abstract: SPARTAN-II 2S30 what the difference between the spartan and virtex 2S15 2S50 CS144 FG256 PQ208 TQ144
Contextual Info: Spartan-II Family FAQ 1. What is the Spartan-II family? The Spartan-II family is the next generation family of the Spartan Series based on the industry-leading Virtex architecture. The Spartan-II family extends the portion of the ASIC market that Xilinx can address, while