BSS10 Search Results

transistor 45 f 123

Contextual Info: c m p r M - iii n SEM IC ONDUCTO R September 1996 tm BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,

Contextual Info: N-Channel Enhancement Mode Vertical DMOS FET caloric CORPORATION BSS100L/BSS123 FEATURES • • • • • • • Compact Geometry Fast Switching Speeds No Secondary Breakdown Excellent Temperature Stability High Input Impedance Low Current Drive Ease of Paralleling

TAG 92 transistor

Abstract: philips transformer 524 BSS100 BSS100 TO92 BTB 134
Contextual Info: 711Gû2ti 00tj7BflH Ô15 M P H I N Philips Semiconductors Data sheet status Product specification date of issue November 1990 FEATURES • BSS100 N-channel enhancement mode vertical D-MOS transistor Q U IC K REFERENCE DATA Direct interface to C-MOS, TTL, etc.

BSS123

Contextual Info: September 1996 F A IR C H IL D SEM IC ONDUCTO R tm BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,

B55123

Abstract: bss123 marking BSS123 BSS100L XBSS123 125C-2
Contextual Info: N-Channel Enhancement Mode Vertical DMOS FET BSS100L /BSS123 FEATURES • • • • • • • Compact Geometry Fast Switching Speeds No Secondary Breakdown Excellent Temperature Stability High Input Impedance Low C urrent Drive Ease of Paralleling APPLICATIONS

bss100 transistor

Abstract: BSS100 PINNING-TO-92 JZSS773
Contextual Info: Philips C o m po nents Data sheet status P ro d u c t sp e cific a tio n data of issue N ov em b er 1990 FEATURES BSS100 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA • Direct interface to C-M O S, TTL, etc. SYM BOL

BSS100

Abstract: transistor P1 P bSS100 TRANSISTOR DATASHEET bss100 transistor BSS100 TO-92 F1 SOT23 BSS100 equivalent BSS123 transistor bss123
Contextual Info: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

BSS123

Abstract: BSS100L XBSS123
Contextual Info: calocfic N-Channel Enhancement Mode Vertical DMOS FET CORPORATION BSS100L /BSS123 FEATURES • • • • • • • Compact Geometry Fast Switching Speeds No Secondary Breakdown Excellent Temperature Stability High Input Impedance Low Current Drive Ease of Paralleling

BSS123

Abstract: BSS100 transistor BJ 017 bss100 transistor BSS100 TO92 BS8123 BSS100 TO-92 BSS10 bss123 transistor
Contextual Info: i |_ | I q Septem ber 1996 S E M IC O N D U C T O R tm BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary,

BSP87

Abstract: bsp296 l BSS125 bss149 to92d
Contextual Info: SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type Characteristics T( =25°C M axim um Ratings N = N Channel P = P Channel V BS107 BS170 BSS88 BSS89 BSS91 BSS92 BSS98 BSS100 BSSlOl BSSUO BSS124 BSS125 BSS129 BSS135

BSS100

Abstract: bss123 CBVK741B019 F63TNR PN2222N BSS100 TO-92
Contextual Info: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

BSS123

Abstract: BSS100 85S100 TRANSISTOR BSS123 K5011
Contextual Info: tu N ational Semiconductor" J u ly 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS

Contextual Info: Philips Components D a ta s h e e t s ta tu s P ro d u ct sp ecification d a te o f is s u e N o v em b e r 1 990 FEATURES • BSS100 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA Direct interface to C-M O S, TTL, etc.

BSS123

Abstract: BSS100 equivalent BSS100 bss100 transistor
Contextual Info: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features BSS100: 0.22A, 100V. RDS ON = 6Ω @ VGS = 10V. BSS123: 0.17A, 100V. RDS(ON) = 6Ω @ VGS = 10V These N-Channel logic level enhancement mode power field

VPS05163

Abstract: BSS100 GPS05560 Q67060-S6084-A101
Contextual Info: BTS 4140 N Smart High-Side Power Switch One Channel: 1 x 1Ω Features Product Summary • Current controlled input Overvoltage protection Vbbin AZ • Short circuit protection Operating voltage Vbb(on) • Current limitation On-state resistance RON 62 V

SP2083

Abstract: ST72F344 ST72F521 74FCT 74HCT AN1179 ST662A ST72344 ST72F264 74HC40103
Contextual Info: ST7 FAMILY ICC Protocol REFERENCE MANUAL April 2003 1 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF

BSS97

Abstract: 2SK564 BSS95 J3303 2SK616 buz349 2SK562 BUZ350 BSS98 BSS101
Contextual Info: SÉ*G siPMos«npicjnz., mííMüs-FET07r>ígíA a^\ iz)i,ammitâumæ£xyi&ÿi<D 4 IS H « ® *S S It« « A r5 *lC « fc O , r|])ALM aS-s±yV°9-M OS-FET^Z:'íífflU/c/-c j-^-ro jt* i= • e t ^ v ís ía •Z'fy+yymm m • M u ffig •-tzJb^ftCD/JvM-íb

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

INFINEON BSS100

Abstract: BTS4140
Contextual Info: BTS 4140 N Smart High-Side Power Switch One Channel: 1 x 1W Features Product Summary • Current controlled input Overvoltage protection Vbbin AZ · Short circuit protection Operating voltage Vbb(on) · Current limitation On-state resistance RON 62 V 4.9.60 V

BSS87

Abstract: BSP315 SOT223 BSP171 BSS125
Contextual Info: SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type M axim um Ratings N = N Channel P = P Channel BSP17 BSP88 BSP89 BSP92 BSP 125 BSP129* BSP135* BSP149* BSP171 BSP295 BSP296 BSP297 BSP298 BSP299 BSP315 BSP316 BSP317

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

220 uh inductors

Abstract: 220 uh on 707 BSS154 toroidal choke mf 470 uH inductors 330 mH BSS331 BSS101 BSS474
Contextual Info: HCF Series High Current Filters BSS Series Small Shielded Inductors BSL Series Large Shielded Inductors MSB Series Shielded Inductors ITL Series Toroidal Inductors .300 MAX .725 MAX ITS Series Small Toroidal Inductors HFT Series Toroidal Inductors TBM PCB Mount Toroids

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is