BGA119 Search Results

K 349

Contextual Info: 4.050" 1 399 49 99 51 400 2 2 1 B D F 2.750" 351 H 352 K 349 350 M P T 300 301 4 3 150 149 152 151 200 199 6 5 7 A C E G J L N R U 252 250 202 251 249 201 302 299 101 100 52 50 102 Top View TOP INTERFACE Male pins Mates with SK-BGA119Ax-Z-M-0x, SK-LGA119Ax-Z-M-0x sockets

SF-BGA119A-B-11

Contextual Info: D Package Code: BGA119A C 7.62mm [0.300"] See BGA pattern code to the right for actual pattern layout Y 20.32mm [0.800"] X Top View reference only 1.27 mm [0.050"] 2 0.36mm [0.014"] dia. 5.33mm 3.74mm [0.147"] [0.210"] Ø 0.64mm pad [Ø 0.025"] 1.27mm [0.050"]

43bh

Abstract: marking code 42ae marking JC 6f diode CXK77P18E160GB CXK77P36E160GB CXK77P36E160GB-4AE CXK77P36E160GB-4E 43AF marking 43AF
Contextual Info: SONY CXK77P36E160GB / CXK77P18E160GB 16Mb LW R-L HSTL High Speed Synchronous SRAMs 512K x 36 or 1M x 18 8Mb LW R-L w/ EC HSTL High Speed Synchronous SRAMs (256K x 36 or 512K x 18) 4/42/43/44 Preliminary Description The CXK77P36E160GB (organized as 524,288 words by 36 bits) and the CXK77P18E160GB (organized as 1,048,576 words

CXK77L18R160GB-3

Abstract: CXK77L18R160GB-33 CXK77L18R160GB-4
Contextual Info: SONY CXK77L18R160GB 16Mb LW R-R HSTL High Speed Synchronous SRAM 1M x 18 3/33/4 Preliminary Description The CXK77L18R160GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 1,048,576 words by 18 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a one-deep write buffer

CXK77Q18B80AGB

Abstract: CXK77Q36B80AGB CXK77Q36B80AGB-28 CXK77Q36B80AGB-33
Contextual Info: SONY CXK77Q36B80AGB / CXK77Q18B80AGB 28/33/37/4 8Mb LW R-R HSTL High Speed Synchronous SRAMs 256K x 36 or 512K x 18 Preliminary Description The CXK77Q36B80AGB (organized as 262,144 words by 36 bits) and the CXK77Q18B80AGB (organized as 524,288 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input

Contextual Info: CXK77B3611AGB -5/6 High Speed Bi-CMOS Synchronous Static RAM Description The CXK77B3611AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a

Contextual Info: SONY CXK77V1840GB -8 /1 0 /1 2 262,144-Word by 18-bit High Speed CMOS Synchronous Static RAM P f Q l / 'f j j j f j Q f y Description The CXK77V1840GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This

CXK77N18R160GB

Abstract: CXK77N18R160GB-3 CXK77N18R160GB-33 CXK77N18R160GB-4 CXK77N36R160GB CXK77N36R160GB-3 CXK77N36R160GB-33 CXK77N36R160GB-4
Contextual Info: SONY CXK77N36R160GB / CXK77N18R160GB 16Mb LW R-R HSTL High Speed Synchronous SRAMs 512Kb x 36 or 1Mb x 18 3/33/4 Preliminary Description The CXK77N36R160GB (organized as 524,288 words by 36 bits) and the CXK77N18R160GB (organized as 1,048,576 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input

IC51-128

Abstract: transistor fpq 630 PC-68 TTP-48DF OF IC 7421 Enplas fpq Enplas PT740 AB am fm radio Hitachi DSAUTAZ005
Contextual Info: Hitachi Semiconductor Package Data Book Introduction Contents Section 1 Introduction of Packages 1.1 Types of Packages and Advantages 1.2 IC Package Name and Code Indication 1.3 Method of Indicating IC Package Dimensions 1.4 Lineups in Terms of Shapes and Materials

BGA676

Abstract: BGA665 BGA-1156 156 QFN 12X12 LGA240 BGA-783 BGA441 BGA1024 BGA1521 7286X
Contextual Info: Ironwood Electronics Appendix A AP-A.1 APPENDIX A • BGA Chip Package Specification Tables . . . . . . . .page AP.2 thru AP.16 • LGA Chip Package Specification Table . . . . . . . . . . . . . . . . .page AP.17 • MLF Package Specification Table . . . . . . . . . . . . . . . . . . . . .page AP.18

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

Contextual Info: SONY I CXK77B3611AGB » High Speed Bi-CMOS Synchronous Static RAM Preliminary Description The CXK77B3611AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a

BGA-169

Abstract: TQFP112 BGA169 PQFP144 BGA-421 BQFP-84 qfp132 BGA196 PLCC18 BGA-256
Contextual Info: НАКОНЕЧНИКИ Изображения наконечников Наименование/размер A/B/C/D Наконечники для монтажа (для паяльника PS90) PS, 0.4 мм, конический PS, 0.8 мм, конический

Contextual Info: SONY CXK77Q36B160GB 16Mb LW LS R-R HSTL High Speed Synchronous SRAM 512K x 36 28/33/4 Preliminary Description The CXK77Q36B160GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 524,288 words by 36 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a one-deep write buffer

CXK77S36R80AGB-33

Abstract: 100C CXK77S18R80AGB CXK77S36R80AGB CXK77S36R80AGB-4A marking SBw diode
Contextual Info: SONY CXK77S36R80AGB / CXK77S18R80AGB 8Mb Late Write HSTL High Speed Synchronous SRAMs 256K x 36 or 512K x 18 Organization 33/36/4 Preliminary Description The CXK77S36R80AGB (organized as 262,144 words by 36 bits) and the CXK77S18R80AGB (organized as 524,288 words

CXK77P36L80GB-4A

Abstract: CXK77P36R80GB CXK77P36R80GB-33 CXK77P36R80GB-4A
Contextual Info: SONY CXK77P36R80GB 8Mb LW R-R HSTL High Speed Synchronous SRAM 256K x 36 33/4 Preliminary Description The CXK77P36R80GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 262,144 words by 36 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a one-deep write buffer

sony tsmc

Abstract: CXK77P18L80AGB CXK77P36L80AGB CXK77P36L80AGB-4 CXK77P36L80AGB-4A
Contextual Info: SONY CXK77P36L80AGB / CXK77P18L80AGB 8Mb LW R-L HSTL High Speed Synchronous SRAMs 256K x 36 or 512K x18 4/42/43/44 Preliminary Description The CXK77P36L80AGB (organized as 262,144 words by 36 bits) and the CXK77P18L80AGB (organized as 524,288 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input

TSOP44 Package

Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
Contextual Info: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments

CXK77N18B160GB-3

Abstract: CXK77N36B160GB-3 CXK77N36B160GB-33 CXK77N36B160GB-4 BGA-119
Contextual Info: SONY  CXK77N36B160GB / CXK77N18B160GB 16Mb LW LS R-R HSTL High Speed Synchronous SRAM 512K x 36 or 1M x 18 3/33/4 Preliminary Description The CXK77N36B160GB (organized as 524,288 words by 36 bits) and the CXK77N18B160GB (organized as 1,048,576 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input

PT740 AB

Abstract: PM351 transistor 9726 126 EDR-7313 ED-7402 texas instruments data guide manual Hitachi DSAUTAZ006 DO-35 land pattern Silicon Point Contact Mixer Diodes ED-7311
Contextual Info: Hitachi Semiconductor Package Data Book ADE–410–001H 9th Edition March/2001 Semiconductor & Integrated Circuits Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher

flash 32 Pin PLCC 16mbit

Abstract: 398x
Contextual Info: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.

he804

Abstract: ati connector HE809 smd diode ED MMSD32032602S-C-xx Microspire MB he807 eurofarad TCN30 MMEE08510804S-C-xx mmfl16016604s-c mmfl16016604s-d
Contextual Info: Edition 1.2. Space- & Military Level Components 2008/08 2 Introduction and Table of Contents If you are working on a program for military, industrial and/or space equipments & need product with extended temperature performance, MSA Components can help. To support the customer needs

marking code 43b

Abstract: diode marking code 4n tsmc cmos CXK77P36L80GB-42 CXK77P36L80GB-4A CXK77P36L80GB-4B CXK77P36L80GB CXK77P36L80GB-4
Contextual Info: SONY  CXK77P36L80GB 8Mb LW R-L HSTL High Speed Synchronous SRAMs 256K x 36 4/42/43/44 Preliminary Description The CXK77P36L80GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 262,144 words by 36 bits. This synchronous SRAM integrates input registers, high speed RAM, output latches, and a one-deep write buffer

Contextual Info: So n y CXK77V1840GB - 8/ 10/12 262,144-Word by 18-bit High Speed CMOS Synchronous Static RAM P r e f jf Y ijf jQ f y Description The CXK77V1840GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This