BFX29 TRANSISTOR Search Results

Contextual Info: BFX29 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) APPLICATIONS 6.10 (0.240) 6.60 (0.260) • General Purpose Industrial Applications 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016)

bfx29 transistor

Abstract: BFX29
Contextual Info: BFX29 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) APPLICATIONS 6.10 (0.240) 6.60 (0.260) • General Purpose Industrial Applications 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016)

bfx29 transistor

Abstract: BFX29
Contextual Info: BFX29 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) APPLICATIONS 6.10 (0.240) 6.60 (0.260) • General Purpose Industrial Applications 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016)

bfx29

Abstract: bfx29 transistor
Contextual Info: SILICON PNP TRANSISTOR BFX29 • Hermetic TO-39 Metal package. • Ideally suited for Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC ICM PD TJ Tstg

BFX29

Abstract: bfx29 transistor 1N916 IEC134 ScansUX894
Contextual Info: BFX29 J V_ SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a TO-39 metal envelope for general industrial applications. QUICK REFERENCE DATA Collector-base voltage open emitter - v CBO max. 60 V Collector-emitter voltage (open base) -V c E O

Contextual Info: <££ml-Condu.eioi ZPioduati, fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BFX29 MECHANICAL DATA Dimensions in mm (inches) PNP SILICON EPITAXIAL TRANSISTOR APPLICATIONS • General Purpose Industrial Applications

Contextual Info: SILICON PNP TRANSISTOR BFX29 • Hermetic TO-39 Metal package. • Ideally suited for Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC ICM PD TJ Tstg

transistor 2TH

Contextual Info: N AMER PHILIPS/DISCRETE t^E D • 1^53=131 0027726 706 BFX29 SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a TO-39 metal envelope for general industrial applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter Collector-em itter voltage (open base)

BFX29

Abstract: DF 331 TRANSISTOR bfx29 transistor Silicon Epitaxial Planar Transistor philips Transistor 5331 BFX2
Contextual Info: N AMER PHILIPS/DISCRETE m bbSB^l 0G2772Ô 70Û b^E D BFX29 A SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a TO-39 metal envelope for general industrial applications. Q U IC K R E F E R E N C E D A T A - v CB0 max. Collector-emitter voltage open base

T2721

Abstract: BFX29 CTC 880 transistor d0422 bfx29 transistor IEC134 Silicon Epitaxial Planar Transistor philips 5BE1
Contextual Info: BFX29 T - Z.7 - Z J PHILIPS INTERNATIONAL SbE D • 711005b 0GM2EGb 5Ô7 ■ P H I N SILICON PLANAR EPITAXIAL TRANSISTOR £ PNP transistor in a TO-39 metal envelope for general industrial applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter

BFX29

Contextual Info: BFX29 J \ _ SILICON PLANAR EPITAXIAL TRANSISTOR PNP tran sisto r in a TO -39 m etal package fo r general in d u stria l applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open e m itte r - v CB0 max. C o lle c to r-e m itte r voltage (open base)

BFX29

Contextual Info: BFX29 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 0.41 (0.016)

BFX29

Abstract: bfx29 transistor
Contextual Info: BFX29 MECHANICAL DATA Dimensions in mm inches PNP SILICON EPITAXIAL TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 )

BC140 equivalent

Abstract: 2n3019 equivalent BC107 equivalent transistors bcy59 equivalent equivalent to BC177 BC141 equivalent 2n930 equivalent BC107 pnp equivalent bc109 equivalent BC160 equivalent
Contextual Info: Discrete Devices Transistors Cont. European “Pro Electron” Types Type Near Equivalent Polarity Pkg. Type Near Equivalent Polarity Pkg. BC107 BC107A BC107B BC108 BC108A 2 N 2484 2N930 2N930 2 N 2484 2N930 NPN NPN NPN NPN NPN T O -18 T O -18 T O -18 T O -18

Contextual Info: TO-39 Meta4-Can Package Transistors PNP Electrical C ha ra cte ristics (Ta=25"C, U n le ss O therw ise Specified) Maximum Ratings Type No. CBO (V) Min CEO (V) Min EBO (V) Min Pd (W) (A) (A) *ceo ^CB b s ^C£ (MA) @ (V) (HA) Max 8 (V ) Max Tc=25”c hFE

2n2906

Abstract: bfx29 transistor 2N2102 2N2218A 2N2219A 2N2904A 2N2905A 2N2906A 2N4036 BFX29
Contextual Info: PNP SWITCHING TABLE 4 - SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector

Contextual Info: SbE D ^ 7 0 5 7 0 Q Q O b ' m Tfifl • Z E T B T -JT I-Q l ■ PNP SWITCHING ZETEX SEMICONDUCTORS TABLE 4 - SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices show n in this table are characterised for medium and high speed switching applications

bc327 smd

Abstract: bd139 smd 2n2907 smd bc109 smd bc107 smd BC640 smd BC547 smd 2n4401 smd bc558 SMD Bd135 smd
Contextual Info: Philips Sem iconductors Small-signal Transistors Conversion list CONVERSION LIST FROM LEADED TO SMD TYPES LEADED SMD LEADED SMD LEADED SMD BC107 BC847 BC546 BC846 BC107A BC847A BC546A BC846A BC107B BC847B BC546B BC846B BC108 BC848 BC547 BC847 BC108A BC848A

BFX36

Abstract: 110H BFX81 BFY64 BFY84 BFT53 BFT54 BFT57 BFT58 BFT59
Contextual Info: Ô133107 4ÔE D G0G0451 SEMELABI 33S ISMLB SEMELAB LTD BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rei Code BFTW REQ REQ REQ HE HE HE HR HE HR HR HE HE HR HE HE EEQ REQ REQ HR HR REQ EEQ KEQ CECC HR KEQ EEQ EEQ EEQ EEQ REQ HE HR HK HE

ME0412

Abstract: ME0413 V405A BC153 me0411 BC126 2sc 1091 BC154 bc143 ME0404-2
Contextual Info: M icro - Electronics Sem iconductors PN P Transistors P N P General Purpose Transistors REFERENCE TA B LE o o >> V EBO V min. max. BC153 BC154 40 40 5 5 50 160 _ BCY70 BCY71 BCY72 40 45 25 5 5 5 50 100 50 BFX48 30 5 Code ME0411 ME0412 ME0413 6 6 5 45 45

BC140 equivalent

Abstract: 2N2484 equivalent transistors BC141 equivalent bcy59 equivalent bc160 equivalent 2n930 equivalent BC107 equivalent transistors 2n3019 equivalent BC177 equivalent BC107 pnp equivalent
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maximum Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts HpE *C Min/Max mA V c E (S a t) @ Ic/lß Volts mA/mA ft MHz Min NF@f Cob pF Max dB

2N2219 transistor

Abstract: BSV16 2N2102 2N2218A 2N2219A 2N2904A 2N2905A 2N2906A 2N4036 BFX29
Contextual Info: PNP SWITCHING TABLE 4 - SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector

bcy59 equivalent

Abstract: BC140 equivalent 2N3913 BCY95 bc140-10 2n3019 equivalent 2N2708 2N328A BC109C NPN BCY22
Contextual Info: Discrete Devices Transistors Cont. Choppers Maximum Ratings Polarity PD Ambient h f e @>c VCE V e B Volts Volts Min/Max mA II Type Electrical Characteristics @ 25° C V c E (S a t) @ Ic/lß mA/mA — Vq @Ib mV rd@l B Cob Package pF mA Ohms mA - 14 Max 2N943

bc140

Abstract: 2N2102 2N4036 BC141 BC161 BCY65E BCY77 BSV16 ZT211 ZT89
Contextual Info: PNP LOW LEVEL TABLE 2 - PNP SILICON PLANAR LOW LEVEL TRANSISTORS The devices sh ow n in this table are low level transistors designed for small and medium signal, low and medium power amplification from D C to radio frequencies in Commercial, Industrial and Military