BFR96 AN Search Results

transistor bfr96

Abstract: BFR96 BFR964 RF NPN POWER TRANSISTOR 3 GHZ 200 watts motorola J50 datasheet for transistor bfr96 BFR96 TRANSISTOR BFR961 RF TRANSISTOR 1.5 GHZ BFR96 motorola
Contextual Info: MOTOROLA Order this document by BFR96/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state–of–the–art microwave transistor chip which features fine–line geometry, ion–implanted arsenic emitters and gold

BFR96

Abstract: BFR96 TRANSISTOR transistor bfr96
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers

Contextual Info: j. ts TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain - Bandwidth Product, fT = 4.5 GHz (typ) @ 1C = 50 mA •

transistor bfr96

Abstract: SL 100 NPN Transistor BFR96 BFR96 LOW POWER TRANSISTOR transistor 936 M8B916 BFR96 pins resistance BFR96 TRANSISTOR BFQ32 a 933 transistor
Contextual Info: Philips Sem iconductors Product specification ^ NPN 5 GHz wideband transistor PHILIPS DESCRIPTION 711DÔ2t> 0 0 4 5 7 7 b Sfc.E D INTERNATIONAL BFR96 lfl7 « P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as

bfr96

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz

Contextual Info: bbSBTBl 0032S14 TSO Philips Semiconductors MB APX Product specification NPN 5 GHz wideband transistor crystal X3A-BFR96 N AMER PHILIPS/DISCRETE DESCRIPTION b^E ]> MECHANICAL DATA NPN crystal used in BFR96S SOT37 , BFQ63 (TO-72) and BFR106 (SOT23). Crystals are supplied as whole

BFR96S

Abstract: transistor bfr96 BFQ63 BFR96 BFR106 X3A-BFR96 35331
Contextual Info: b b S 3 cì31 Q032E14 T50 ^ B A P X Philips S em iconductors Product specification NPN 5 GHz wideband transistor crystal X3A-BFR96 N AMER PHILIPS/DISCRETE DESCRIPTION b^E ]> MECHANICAL DATA NPN crystal used in BFR96S SOT37 , BFQ63 (TO-72) and BFR106 (SOT23). Crystals are supplied as whole

BFR96

Abstract: s-parameter 2N3866A transistor bfr96 bfr96 equivalent 2N4427 equivalent bfr91 2N4427 2N5109 2N5179 2N6255 BFR96G
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR96G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR96G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA

BFR96 philips

Contextual Info: ^ 5 3 ^ 3 1 Philips Semiconductors 0 0 3 1 flfl7 b fll M APX Product specification BFR96 NPN 5 GHz w ideband transistor N AflER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as

BFR96

Abstract: BFR96 philips BFR96 LOW POWER TRANSISTOR for transistor bfr96 BFQ32 4 20 mA 1992 transistor bfr96 philips bfq32 BFR96$ a 933 transistor
Contextual Info: Philips Sem iconductors Product specification ^ NPN 5 GHz wideband transistor DESCRIPTION VllDfiEb D04577b lfl7 « P H I N SbE D PHILIPS INTERNA TIONAL BFR96 PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as

BFR96

Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n H igh -Frequ en cy Thransistor The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers

NE56755

Abstract: BFR96S HXTR4105 LT3203 HXTR3615 NE21960 j200 Avantek S MA42141 2sc240s
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5

BF907

Abstract: BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5

SL2128

Abstract: MRF965 MRF961 BFRC96 case 317-01
Contextual Info: MOTOROLA SC XSTRS/R F 4bE b3b7HS4 D 00=14173 b • MOTOROLA SEMICONDUCTOR TECHNICAL DATA BFR96 BFRC96 MRF961 MRF962 MRF965 T h e R F L in e NPN SILICO N H IG H FREQ UENCY TRANSISTORS The B FR 96 series transistors use the same state-of-the-art m icro ­

transistor bfr96

Abstract: BFR96 philips BFR96 BFR96 LOW POWER TRANSISTOR for transistor bfr96 BFR96 TRANSISTOR a 933 transistor BFR96 pins resistance BFQ32 Transistor 933
Contextual Info: ^ 5 3 ^ 3 1 Philips Semiconductors 0031ÛÔ7 b fll M APX Product specification BFR96 NPN 5 GHz wideband transistor N AMER PHILIPS/DISCRETE DESCRIPTION □TE D PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as

Transistor C G 774 6-1

Abstract: C G 774 6-1 transistor a 1941 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor The BFR96 transistor uses the sam e s ta te -o f-th e -a rt microwave transistor chip which features fine -line geometry, ion-im planted arsenic em itters and gold top metallization. This transistor is intended for low -to -m e dium power amplifiers

X3A-BFR96

Abstract: transistor bfr96 BFR96S BFR96 BFQ63 crystal PHILIPS BFR106
Contextual Info: P h ilip s S em icon du ctors T 3 l '^ o NPN 5 GHz wideband transistor crystal PHILIPS INTERNATIONAL Produ ct sp ecification SbE D • X3A-BFR96 IPHIN 711Gß2b OaMblQH 4^2 M E C H A N IC A L DATA D ESCRIPTION Crystal N PN crystal used in BFR 96S SOT37 , BFQ63 (TO-72)

MRF966

Abstract: MRF96 re30d
Contextual Info: MRF961 MRF962 MRF965 See BFR96 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line MRF966 MRFC966 N-Channel Dual-Gate G aA s Field-Effect Transistor . . . d e p le t i o n m o d e d u a l- g a t e M E S F E T d e s ig n e d f o r h ig h f r e q u e n c y a m p lif ie r

MRF965

Abstract: mrf*965 MRF961 LE2V f962 MRF96 BFR96 an
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA BFR96 BFRC96 MRF961 MRF962 MRF965 The RF Line NPN S IL IC O N H IG H F R E Q U E N C Y T R A N S IS T O R S T h e B F R 9 6 series tra n s is to rs use the same s ta t e - o f- t h e - a r t m i c r o wa ve t r a n s i s t o r c h i p w h i c h f e a t u r e s f i n e - li n e g e o m e t r y , io n - i m p l a n t e d

MOTOROLA 2N5179

Abstract: 2N5160 BFR96 MM4049 MRF531 BFR90 MOTOROLA MRF911 2N4957 2N5032 2N5583
Contextual Info: Low-Noise The low-noise devices listed are produced w ith carefully controlled rj, and f j to optim ize device noise performance. Devices listed in the m atrix are classified according to noise figure perform ance versus frequency. dB 1.5 2.0 2.5 3.0 3.5

2N5109 motorola

Abstract: MRF536 BFR90 application MRF931 MRF586 244A-01 MRF962 MRF961 mrf517 2N5943
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JT X and J T X V processing levels are available a s well a s Hi Rei pro­

900 mhz oscillator using bfr91 transistor

Abstract: Mrf648 uhf amplifier design BFR90 Motorola transistors MRF646 Motorola transistors MRF648 Motorola transistors MRF630 case 317-01 MRF2369 MRF586 motorola mrf237
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­

mrf502 gold transistor

Abstract: Motorola transistors MRF630 2N3948 transistor 2n4959 BFR96 MRF2369 MRF525 MRF536 MRF931 MRF911
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­