BF 179 Search Results

k 513

Abstract: MOBILE PHONE AMPLIFIER michael hiebel fundamentals of vector analysis bfp640f BFP620 applications note gps trimble transistor bf 179 Miteq MTA-100 AN179
Contextual Info: BF P640 F AN179 High Gain , Hi gh IP3 GPS L NA using BF P640 F Si Ge: C Transisto r Applic atio n Note Revision: Rev 1.2, 2010.02.16 RF and Protecti on Devi c es Edition 2010.02.16 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG

MD918

Abstract: MD918A K 1170 MD918F MD918B MD918BF
Contextual Info: MD918, A, B silicon MD918F, AF, BF NPN SILICON MULTIPLE SILICON ANNULAR TRANSISTORS MULTIPLE TRANSISTORS . . . designed fo r use as d ifferential amplifiers, dual high frequency amplifiers, fro n t end detectors and temperature compensation applications.

transistor Bf 981

Abstract: transistor BF 257 Transistor 0235 BF bf 671 transistor BF 236 transistor bf 324 BF 273 transistor BF775 transistor marking zg bf 695
Contextual Info: BF 775 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to 2GHz especially for wide band antenna amplifier mixers and oscillators in TV-sat-tuners. Features D High power gain D Low noise figure D High transition frequency

k192a

Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
Contextual Info: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188

Contextual Info: Temic BF 775 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to 2GHz especially for wide band antenna amplifier mixers and oscillators in TV-sat-tuners. Features • • • High power gain Low noise figure High transition frequency

bf 239

Abstract: 2SD2098 BY 179 476E Bf 353 RC244
Contextual Info: SPICE PARAMETER 2SD2098 by ROHM TR Div. * Q2SD2098 NPN BJT model * Date: 2006/11/14 .MODEL Q2SD2098 NPN + IS=700.00E-15 + BF=239.68 + VAF=3.5571 + IKF=15.353 + ISE=700.00E-15 + NE=1.6035 + BR=88.202 + VAR=100 + IKR=.35583 + ISC=228.00E-12 + NC=1.6682 + NK=.81465

2SD2118

Contextual Info: SPICE PARAMETER 2SD2118 by ROHM TR Div. * Q2SD2118 NPN BJT model * Date: 2006/11/14 .MODEL Q2SD2118 NPN + IS=700.00E-15 + BF=239.68 + VAF=3.5571 + IKF=15.353 + ISE=700.00E-15 + NE=1.6035 + BR=88.202 + VAR=100 + IKR=.35583 + ISC=228.00E-12 + NC=1.6682 + NK=.81465

BF239

Abstract: 2SD1963 RC244
Contextual Info: SPICE PARAMETER 2SD1963 by ROHM TR Div. * Q2SD1963 NPN BJT model * Date: 2006/11/14 .MODEL Q2SD1963 NPN + IS=700.00E-15 + BF=239.68 + VAF=3.5571 + IKF=15.353 + ISE=700.00E-15 + NE=1.6035 + BR=88.202 + VAR=100 + IKR=.35583 + ISC=228.00E-12 + NC=1.6682 + NK=.81465

Contextual Info: Te m ic BF 775 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to 2GHz especially for wide band antenna amplifier mixers and oscillators in TV-sat-tuners. Features • • • High power gain Low noise figure High transition frequency

NT1GC64B88A0NF

Abstract: NT2GC64B8HA0NF-BE nanya 2gb DDR3 DIMM DDR3 DIMM SPD DDR3 DIMM SPD JEDEC nanya DDR3 1333 NT2GC64B8HA0NF PC3-10600 SSTL-15 NT2GC64B8HA0NF-CG
Contextual Info: NT1GC64B88A0NF / NT2GC64B8HA0NF 1GB: 128M x 64 / 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM Based on DDR3-1066/1333 128Mx8 SDRAM A-Die Features •Performance: Speed Sort PC3-8500 PC3-8500 PC3-10600 -BE -BF -CG Unit DIMM CAS Latency 7 8

2SC5317FT

Contextual Info: 2SC5317FT SPICE2G6 model parameters 20010110 NET LIST .SUBCKT 2SC5317FT CB 2 LWB 2 LWE 4 Cpe 4 Cpb 5 LC 6 CC 1 CBC 1 Q1 6 5 4 + AREA= 1 .MODEL NPN + IS + BF + NF + VAF + IKF + ISE + NE + BR + NR + VAR + IKR + ISC + NC + RB + IRB + RBM + RE + RC + XTB + EG

zq 405-MF

Abstract: siemens 30 090 GP 819 SAA 1006 saa 1070
Contextual Info: BSE D • Ö23b320 QQlb^BO T M S I P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS T'SI'I? BF P193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • ff = 8 GHz. F = 1.2 dB at 800 MHz. ESD: Electrostatic discharge sensitive device, observe handling precautions!

bo 615

Abstract: ic 2 bo 565 bf 649 AI 757 transistors ai 757 BF415 boitier to 126 transistor ESM 30 TO-126-F To 126
Contextual Info: T O 92 F 139 B CB 97 (CB 76) Silicon N PN transistor», video high voilage Transistors N P N silicium, haute tension vidéo Case Type B oitie r ptot (W) 2N 5 5 50 T O 92o 2N 5551 T O 92o BF 179C T O 39 0,6 B F 257 T O 39 51 B F 258 T O 39 * B F 259 8 F 297

Contextual Info: m ass o m m m ots REVISION BF MHEMMNS ME N NCHES NOTES: 1. TERMINALS TO BE SHEARED TO MEET DIMENSION SPECIFICATION. Z PARTS MAY BE CUT TO POSITION. 3. MINIMUM PUSHOUT FORCE: .5 LB. 4. NOTE DELETED 5. EJ OPTION IS NOT AVAILABLE AS OF REVISION AG. APPLICABLE VIEWS ARE REMAINING FOR REFERENCE TO BUILD

Contextual Info: Plug-In 4TE ì> m flO bf lfl ll 000122S SflT « S C C Frequency Mixers Model LEVEL 7 T-74-09-01 LMX-113 + 7 dB m LO, up to +1dBm RF SC IE N TIFIC / M IN I-C IR C U ITS computer-automated performance data typical production unit / for data of other models consult factory

U826

Contextual Info: M BF F n h n n o p H d m im 36Sj/ d m im 32Sj K Z bM 6/1MbX32 * l “ Z y S ^ te m s S x . * '* * * Product Specification Features Architecture • 2KByte SRAM Cache Memory for 12ns Random Reads Within a Page ■ Fast DRAM Array for 30ns Access to Any New Page

Contextual Info: A88 5E88( /.3-+60!9A/<0$?:6C #?G03?ECD930%?9C50C,0C9J5 BF F 8/B>01/8/<+>3980:9A/<0=96?>398 %&#$010 !% $0 L0#?G03?ECD930>?9C50E94 L0%BBC8C0EB40549D9?>01@@B?F54 L0#5CC0D81>0EBBQ0<51;17503EBB5>D L0CBN0?@D9?>01F19<12<5 L0FBBB-09C?<1D9?>

BF455

Abstract: transistor bf 179 bf455 Characteristics low noise transistor bF 179 low noise transistor bF 455
Contextual Info: BF 455 SILICON P L A N A R NPN PREAMPLIFIER AND AM/IFM IF AMPLIFIER The B F 455 is a silico n planar NPN tran sistor in T O -1 8 epoxy package, with low reverse cap acitan ce, very low noise, high output im pedance. The B F 455 is e sp e cia lly suited for FM tuners, IF am plifiers in A M /F M receivers, AM

2n2222

Abstract: A2222 2n2222a 2221-2N 2222a 2222 kn a npn 2222 2n2221 amd 2907 2N 2222
Contextual Info: * 2 N 2 2 2 1 ,A * 2 N 2 2 2 2 .A NPN SILICON TRAN SISTO R S, E PIT A X IA L P L A N A R T R A N S IS T O R S N PN S ILICIU M . P L A N A R E P I T A X I A U X Compl. of 2N 2906, A - 2N 2907, A îfc Preferred device D is p o s itif recommandé • L F or BF small or large signal amplification

SDT 9202

Abstract: bdx 338 BU 450 bdx
Contextual Info: ALPHANUMERIC BC 107. .73 BC 108. .73 BC 109. .73 BC 170. .74 BC 171. .74 BC 172. .74 BC 173. .74 BC 174. .74 BC 177. .73 BC 178. .73 BC 179. .73 BC 190. .73 BC 237. .74 BC 238. .74 BC 239. .74 BC 250. .74

PCR 406

Contextual Info: SHEET 1 OF 1 8.13 [.320 in] n2.38 [.094 in] n4.95 [.195 in] 6.10 [.240 in] 4.55 [.179 in] n4.95 [.195in] WITHOUT LOCKING RING 9.14 [.360 in] n6.00 [.236 in] WITH STANDERD LOCKING RING PANEL MOUNTING 4.40 [.173 in]FLAT SWITCH FUNCTION POS. 1 POS. 2 POS. 3 ON

BF179

Abstract: bf 179 BF179C vt120
Contextual Info: B F 179 C NPN S IL IC O N T R A N S IS T O R S , P L A N A R TRANSISTORS NPN S ILIC IU M , PLANAR - W ide-band, high voltage a m p lific a tio n A m p lifica tio n haute tension à large bande VCER 250 V fT 120 MHz Typ. c 12e 1,8 pF M axim um po w e r dissipation

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

FET BFW 43

Abstract: MPSA 506 transistor TRANSISTOR BC 157 TRANSISTOR BC 530 transistor BF 298 BFT58 transistor mpsa 42 BFW 43 transistor transistor 2SA transistor 2 sa 72 transistor BF 257
Contextual Info: 4.2+« 4.2+* I OOOOO C MC MC MC MC M O O O 1O C Mt—i— 1 C M Oo C MC M - I I I I CMC MC MC MC M C MID ID 1 C M OO C MC M lO ID ID LOLD C MC MC M*- t-* o' ò o’ O* O 1 LOLOLOLO C MC MC MC M o d O* O 0> «—C Mr- C MC M - Ul O> > IO o o o o CO»—« —*—