BD899A Search Results

BD895A

Abstract: BD896A BD897A BD898A BD899A BD900A
Contextual Info: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD896A, BD898A and BD900A ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE TOP VIEW B 1 C

BD895A

Abstract: BD896A BD897A BD898A BD899A BD900A
Contextual Info: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD896A, BD898A and BD900A ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE TOP VIEW B 1 C

Contextual Info: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • AUG UST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD896A, BD898A and BD900A T 0 -2 2 0 PACKAGE TOP VIEW • 70 W at 25°C Case Temperature

C03GE

Abstract: BD901 BD597 BD897 BD897A BD899 BD895 BD895A BD896 BD899A
Contextual Info: 01 G E SOLID STATE 3875081 G E SOLID STATE m o 1~E 17277 _ File Number « 1240 TI 3Ö7SDÖ1 0017577 3 |~~ D uanin gto n Power Transistors BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 8-Ampere N-P-N Darlington Power Transistors

BD901

Abstract: BD897 case BD901 1N914 BD895 BD895A BD897A BD899 BD899A D03bt
Contextual Info: TEXAS I N S T R -COPTO* b5 D eT | ODBbS'i'i 62C 36599 8961726 TEXAS INSTR <OPTO> BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS R E V IS E D O C TO B E R 1 9 8 4 • 70 W at 2 5 °C Case Temperature T -3 3 -2 9 • 8 A Continuous Collector Current

BD895A

Abstract: BD896A BD897A BD898A BD899A BD900A
Contextual Info: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● AUGUST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD896A, BD898A and BD900A TO-220 PACKAGE TOP VIEW ● 70 W at 25°C Case Temperature

BDX53D

Abstract: D45VH4 BD807 D44H5 bdw41 BUS36 BD900 BD805 BDX33D D44H8
Contextual Info: Silicijevi transistorji 0,5 A do 15 A Silicon transistors 0.5 A to 15 A Tip/Type NPN 2N6044 TIP101 BDX53B TIP131 BD899 BD899A BDX53C TIP132 BD901 2N6045 TIP102 MJE15028 BDX53D MJE15030 BU807 BU806 MJE13006 Uceo PNP 2N6041 TIP106 BDX54B TIP136 B0900 BD900A

Contextual Info: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS Copyright C 1997, Power Innovations limited. UK AUGUST 1 9 9 3 -REVISED MARCH 1997 Designed fo r Com plem entary Use w ith BD896A, B0898A and BDSOOA TO-220 PACKAGE TOP VIEW 70 W a t 25°C Case Temperature

D895

Abstract: transistor Bd 699 transistor BD901 BD695A BD895 BD897A D-897 bd897 motorola
Contextual Info: MOTORCLA sc XSTRS/R F lE E D I b3b?254 GGfl47bS T | BD895, BD895A BD897, BD897A BD899, BD899A BD901 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC POWER SILICON NPN DARLINGTONS DARLINGTON 8 AMPERE NPN SILICON POWER TRANSISTORS . for use as output devices in complementary general-purpose

Contextual Info: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD896A, BD898A and BD900A ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A This series is currently available, but

case BD901

Abstract: BD901 BD895 BD899
Contextual Info: BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 File Number 1240 8-Ampere N-P-N Darlington Power Transistors 45-60-80-100-Volts, 70 Watts TERMINAL DESIGNATIONS Gain of 750 at 4 A BD895A, BD897A, BD899A Gain of 750 at 3 A (BD895, BD897, BD899, BD901) Features:

BDX334

Abstract: bdy37a BD645 BD647 BD649 BD795 BD796 BD797 BD798 BD799
Contextual Info: 0 2 5 8 3 5 4 A0VANCED SEMICONDUCTOR SILICON - T B 3 ADVANCED P d @ To=25°C DEVICE TYPE NO. BD645 BD647 BD649 BD795 BD796 BD797 BD798 BD799 ËD800 BD801 BD802 BD895 ËD895A BD897 BD897A BD899 BD899A BD901 BDX10 BDX13 &DX33 BDX33A

Contextual Info: BD899A Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)70 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)200uÌ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.750

Contextual Info: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD896A, BD898A and BD900A ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A This series is obsolete and not recommended for new designs.

D895

Abstract: BD 895 bdw 34 a
Contextual Info: b5 TEXAS INSTR -COPTO* DeT | ST b lT H b DDBbS^'ì 62C 3 6 5 9 9 8961726 TEXAS INSTR <OPTO> BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS REVISED OCTOBER 1 9 8 4 T-33-29 • 70 W a t 2 5 °C Case Temperature • 8 A Continuous Collector Current

Contextual Info: BD896A, BD898A, BD900A PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • AUG UST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD895A, BD897A and BD899A T 0 -2 2 0 PACKAGE TOP VIEW • 70 W at 25°C Case Temperature

BD895A

Abstract: BD896A BD897A BD898A BD899A BD900A
Contextual Info: BD896A, BD898A, BD900A PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895A, BD897A and BD899A ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE TOP VIEW B 1 C

BD895A

Abstract: BD896A BD897A BD898A BD899A BD900A
Contextual Info: BD896A, BD898A, BD900A PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● AUGUST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD895A, BD897A and BD899A TO-220 PACKAGE TOP VIEW ● 70 W at 25°C Case Temperature

TIC106D equivalent

Abstract: TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent
Contextual Info: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers

BD897A

Abstract: BD895A BD899A
Contextual Info: SavantIC Semiconductor Product Specification BD895A/897A/899A Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type BD896A/898A/900A ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier,and

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

tic 1260 scr texas

Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
Contextual Info: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.

BOX53C

Abstract: box54c BOX33C box53b transistor box54c box53a box54 box53 box34c b0808
Contextual Info: POWER TRANSISTORS — BIPOLAR PLASTIC continued TO-220AB Package (continued) R esistive Sw itching lcCont V c E O (sus) Amps Max Volts Min 8 Device Type NPN PNP M in/M ax @ lc Am p ts t, US US Max Max fT @ lc Am p PD (Case) MHZ Watts Min @ 25°C 40 2N6386