BD897 Search Results

BD895A

Abstract: BD896A BD897A BD898A BD899A BD900A
Contextual Info: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD896A, BD898A and BD900A ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE TOP VIEW B 1 C

BD895A

Abstract: BD896A BD897A BD898A BD899A BD900A
Contextual Info: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD896A, BD898A and BD900A ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE TOP VIEW B 1 C

transistor BD901

Abstract: BD897 BD901 BD895 BD896 BD898 BD899 BD900 BD902 case BD901
Contextual Info: BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD896, BD898, BD900 and BD902 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE TOP VIEW

Contextual Info: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • AUG UST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD896A, BD898A and BD900A T 0 -2 2 0 PACKAGE TOP VIEW • 70 W at 25°C Case Temperature

BD902

Abstract: BD901 BD895 BD896 BD897 BD898 BD899 BD900
Contextual Info: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE TOP VIEW

C03GE

Abstract: BD901 BD597 BD897 BD897A BD899 BD895 BD895A BD896 BD899A
Contextual Info: 01 G E SOLID STATE 3875081 G E SOLID STATE m o 1~E 17277 _ File Number « 1240 TI 3Ö7SDÖ1 0017577 3 |~~ D uanin gto n Power Transistors BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 8-Ampere N-P-N Darlington Power Transistors

BD901

Abstract: BD897 case BD901 1N914 BD895 BD895A BD897A BD899 BD899A D03bt
Contextual Info: TEXAS I N S T R -COPTO* b5 D eT | ODBbS'i'i 62C 36599 8961726 TEXAS INSTR <OPTO> BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS R E V IS E D O C TO B E R 1 9 8 4 • 70 W at 2 5 °C Case Temperature T -3 3 -2 9 • 8 A Continuous Collector Current

BD901

Abstract: transistor BD901 BD897 BD898 BD899 BD900 BD902 BD895 BD896
Contextual Info: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● AUGUST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD895, BD897, BD899 and BD901 TO-220 PACKAGE TOP VIEW ● 70 W at 25°C Case Temperature

BD895A

Abstract: BD896A BD897A BD898A BD899A BD900A
Contextual Info: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● AUGUST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD896A, BD898A and BD900A TO-220 PACKAGE TOP VIEW ● 70 W at 25°C Case Temperature

Contextual Info: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A This series is currently available, but

Contextual Info: BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD896, BD898, BD900 and BD902 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A This series is currently available, but

Contextual Info: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • AUG UST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD895, BD897, BD899 and BD901 T 0 -2 2 0 PACKAGE TOP VIEW • 70 W at 25°C Case Temperature

Contextual Info: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS Copyright C 1997, Power Innovations limited. UK AUGUST 1 9 9 3 -REVISED MARCH 1997 Designed fo r Com plem entary Use w ith BD896A, B0898A and BDSOOA TO-220 PACKAGE TOP VIEW 70 W a t 25°C Case Temperature

B0897

Abstract: D895 BD901 case BD901
Contextual Info: BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS Copyright t> 1997. Power Innovations Limited. UK_ • Designed for Complementary Use with BD896, B0898, BD900 and BD902 • 70 W at 2S°C Case Temperature • 8 A Continuous Collector Current •

BD897

Contextual Info: Power Transistors www.jmnic.com BD897 Silicon PNP Transistors Features BCE ﹒With TO-220 package ﹒With general-purpose and amplifier applications Absolute Maximum Ratings Tc=25 SYMBOL RATING UNIT VCBO Collector to base voltage PARAMETER 60 V VCEO Collector to emitter voltage

BD901

Abstract: BD895 BD896 BD897 BD898 BD899 BD900 BD902
Contextual Info: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE TOP VIEW

7508A

Contextual Info: BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD896, BD898, BD900 and BD902 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A This series is obsolete and

Contextual Info: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD896A, BD898A and BD900A ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A This series is currently available, but

Contextual Info: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A This series is obsolete and

D897

Contextual Info: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT NAME 1ch DC／DC PWM Converter IC built in synchronous rectifier TYPE BD8972MUV FEATURES ・Output Voltage：3.0Ｖ, Output Current：1.0A ・Fast Transient Response ○ABSOLUTE MAXIMUM RATING（Ta=25℃）

case BD901

Abstract: BD901 BD895 BD899
Contextual Info: BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 File Number 1240 8-Ampere N-P-N Darlington Power Transistors 45-60-80-100-Volts, 70 Watts TERMINAL DESIGNATIONS Gain of 750 at 4 A BD895A, BD897A, BD899A Gain of 750 at 3 A (BD895, BD897, BD899, BD901) Features:

BDX334

Abstract: bdy37a BD645 BD647 BD649 BD795 BD796 BD797 BD798 BD799
Contextual Info: 0 2 5 8 3 5 4 A0VANCED SEMICONDUCTOR SILICON - T B 3 ADVANCED P d @ To=25°C DEVICE TYPE NO. BD645 BD647 BD649 BD795 BD796 BD797 BD798 BD799 ËD800 BD801 BD802 BD895 ËD895A BD897 BD897A BD899 BD899A BD901 BDX10 BDX13 &DX33 BDX33A

Contextual Info: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD896A, BD898A and BD900A ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A This series is obsolete and not recommended for new designs.

Contextual Info: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE TOP VIEW