BD115 TRANSISTOR Search Results

BD115 TRANSISTOR

Abstract: BD115 EMITTER BASE COLLECTOR BD115 VCE1 BD115 application TRANSISTOR bd115
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BD115 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION

BD115

Abstract: TRANSISTOR bd115 BD115 TRANSISTOR ic 245 EMITTER BASE COLLECTOR BD115
Contextual Info: Transys Electronics L I M I T E D NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BD115 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION Collector Emitter Voltage Collector Emitter Voltage (RBE<1KΩ Ω Collector Base Voltage

BD115 TRANSISTOR

Abstract: BD115 BD115 application EMITTER BASE COLLECTOR BD115
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BD115 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION Collector Emitter Voltage

BC319B

Abstract: BF337 BC115 BC114 BC207 BC113 BC207A BC207b fairchild semiconductors BC208
Contextual Info: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors NPN Low Level, Low Noise Amplifier Transistors Plastic Package T092, T O IM REFERENCE T A B LE M a x R a tin g s Co d e Vceo V o lts Ptot T a — 25*C M in mW C h a r a c te r is tic s @

Contextual Info: TO-39 Metal-Can Package Transistore NFN Maxim um Ratings Type No. Electrical Characteristics (Ta=25°C, U n le ss Otherwise Specified) Po (W) @Tc=25°c ^C80 VC8 (mA) Max e (V) 'cES V CE @ (V) hFE @ 'c & (mA) VBE(SAT) 'c e c * ^CBO ^CEO V E0O (V) Min (VI

BF117

Abstract: BF294 BF178 BF299 BC236 BF174 BF298 BC312 BF120 BF137
Contextual Info: High Voltage Transistors TYPE NO. POLA­ RITY CASE MAXIMUM RATINGS HFE Pd VCEO IC ICM* VCER* min mai mW (mA) (V) VCE(sat) IC (mA) VCE max (V) (V) IC (mA) fT min (MHz) Cob Cre* max (MHz) BC236 BC285 BC312 BC393 BC394 N N N P N TO-106 TO-18 TO-39 TO-18 TO-18

PE7058

Abstract: PE7059 BD115 2N5832 BC533 2N5831 se7055 BF337 high voltage npn to-92 SE7056
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL HIGH VOLTAGE AMPLIFIER TRANSISTORS BY ASCENDING VcEO VCEO Item DEVIC E NO. Poliirity NPN PNP hFE »T @ ic V Min Min/Max mA MHz Min Pd C0b pF Max (Confd) Ta 25° C mW TC 25° C W Package No. 1.79 TO-92 1 BC533 160 80/250

2N5859

Abstract: 2N5861 bc140 BC441 transistor BD115 BFW16A 2N5784 2N5785 2N5786 2N6190
Contextual Info: Small Signal Transistors TO-39 Case Continued T Y P E NO. D E S C R IP T IO N v CBO (V ) v C EO V e (V) b h :E O • C BO @ V C B O <V) (HA) (V ) @ IC @ vCE <mA) (V) VC E (S A T ) @ lc (V ) (m A ) *'C E O *VC E R *T c ob ton *off NF (MHz) (pF> (ns) (ns)

2n5859 equivalent

Abstract: BFW16A bc140 BD115 2N5859 2N6190 2N6191 2N6192 2N6193 BC141
Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO @ µA) (µ VCB (V) *ICEO *ICES *ICEV *ICER hFE @ IC @ VCE VCE (SAT) @ IC fT Cob (mA) (V) (V) (mA) (MHz) (pF) ton (ns) toff (ns) (dB) *TYP *TYP

2N5859

Abstract: 2N5784 2N5785 2N5786 2N5861 2N6190 2N6191 2N6192 2N6193 BC140
Contextual Info: Small Signal Transistors TO-39 Case Continued T Y PE NO. DESCRIPTION VC BO h :E @ I C @ VC E VCE(SA T) lc (roA) (MHz) <mA) (V) (V) C0 b *TYP NF *off (ns) (dB) *TYP *TYP *TYP *TYP MIN MIN MIN *'C EO *'C E S *ICEV *'CER MIN M AX MIN MAX M AX M AX

2n5861

Abstract: 2n5859 equivalent 2N5859 BD115 BF178 2N5784 2N5785 2N5786 2N6190 2N6191
Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO VCEO (V) (V) VEBO (V) *VCER ICBO @ (mA) VCB (V) hFE @ IC @ VCE VCE (SAT) @ IC fT Cob (mA) (V) (V) (mA) (MHz) (pF) ton (ns) toff (ns) (dB) *TYP *TYP †TYP *TYP *TYP *TYP *ICEO *ICES

bfr36

Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION v CBO m h|*E v CEO v EBO ! c b o v CBO (V) (V) m VeSBM T)*C m («A» • *c mt (V) ’teE O *VCER NF ♦r (MU*} <PF) ton <*) *off (n*) (dB) •TYP *TYP *TYP TYP -TYP MM MAX MAX MAX MAX

BF297

Abstract: bf391 t BF179 bf305
Contextual Info: High Voltage Transistors H Fe M A X IM U M R A T IN G S TY PE NO. BC285 BC312 BC393 BC394 BC450 BC530 BC531 BC532 BC533 BCW50 PO LA ­ CASE VcEO m W IcM* (m A ) VcER* (V ) 360 800 400 400 350 100 150 100 100 200 120 100 180 180 100 30 50 50 30 50 TO-92A

BF174

Abstract: BF336 BF178 BC-530 BF117 BF338 bf391 t bc285 b*137 BFI79
Contextual Info: High Voltage Transistors T Y PE P O L A ­ NO . R IT Y C A SE BC285 BC312 BC393 BC394 BC450 N N P N P M A X IM U M R A T IN G S ^CEO Pi Ic Ic.Yl* ^CER* m W (m A) (V) H FE fT VcE(sat) min m ax Ic (m A) VfE (V) m ax (V) Ic (m A ) m in (M H z) m ax (M H z)

BF336

Abstract: PE7058 transistor SE7055 BF338 2N5832 SE7056 BD115 BF152 fairchild to-106 2N5059
Contextual Info: FAIRCHILD TRANSISTORS PO W ER Item IC = 0.1 A 0» @ lc m VCEO hFE V Max Mln/Max o DEVICE NO. Polarity NPN PNP < POWER TRANSISTORS BY Icmax, POLARITY AND ASCENDING VQEO V Max @ ic A *T MHz Min(Typ) PD(Max) W T C= 25°C Package No. A Max Continuous 1 BF257

2N5859

Abstract: 2N6191 2N5784 2N5785 2N5786 2N5861 2N6190 2N6192 2N6193 BC140
Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO VCEO (V) (V) VEBO (V) *VCER ICBO ( A) @ VCB hFE (V) @ IC @ VCE VCE(SAT) @ IC fT Cob (mA) (V) (V) (mA) (MHz) (pF) ton (ns) toff (ns) (dB) *TYP *TYP †TYP *TYP *TYP *TYP MAX *ICEO *ICES

BF337

Abstract: 2N5859 BF257-BF258-BF259 BF178 BFR36
Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO VCEO (V) (V) VEBO (V) *VCER ICBO @ µA) (µ VCB (V) hFE @ IC @ VCE VCE (SAT) @ IC fT Cob (mA) (V) (V) (mA) (MHz) (pF) ton (ns) toff (ns) (dB) *TYP *TYP *TYP *TYP *TYP MIN MAX *ICEO *ICES

bc207

Abstract: ME1120 bc208 BC209 BC113 BC207b BC209C BC107B fairchild BC207A BC209B
Contextual Info: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors N P N Low Level, Low Noise Amplifier Transistors Plastic Package T092, T O IM REFERENCE TABLE Max Ratings Code BC113 BC114 BC115 BC207 BC207A BC207B BC203 BC208A BC20IB BC209 BC209B

BEL 100N TRANSISTOR

Abstract: BEL100N bel 100n transistor npn BEL 100N 2n 2222a transistor BEL100 TRANSISTOR bd 657 BF200 transistor transistor BF 245 bd115
Contextual Info: BHARAT EL EK /S E n i C O N D S Device No VC EO Volts min VcBO Volts mm DI 47E D V ebo VoHs min hFE at bias mm /max Ic mA 14353Tfl V ce V o lts 1 CM mA max P lo t mW max □□□□012 ICBO uA typ flTG • V ce Sat V o lts typ ÍT MHz typ BELI Cob pF typ

BC207b

Abstract: BC113 SGS BC208A BC209B BC207A BF257 BC113 BC114 BC209 BC208 transistor
Contextual Info: Fairchild Sem iconductors Semiconductors Silicon Small Signal Transistors NPN Low Level, Low Noise Amplifier Transistors P lastic P ack ag e T 0 9 2 , T O IM REFERENCE TABLE Max Ratings Characteristics @ 25‘ C Code V c e o Pt o t Volts T a — 25*C mW

BD115

Abstract: TO-92-4pin
Contextual Info: CONTINENTAL DEVICE INDIA b3E D • 23033^4 OOQOOflb =13^ ■ CDIL TO-39 METAL-CAN PACKAGE TRANSISTORS NPN Type No. hFE VCEO V EBO •cBO VCB (V) Min (V) Min (V) Min (MA) Max (V) 2N3439 450 350 7 20.000 360 40 2N3742 300 300 7 0.200 200 VCBO lc (mA)

BC236

Abstract: BF305 BCW50 BC285 BF137 BF298 BF299 BC312 BCW5 BCX30
Contextual Info: NO. v 'c Cob V CE SAT Tl X M A X IM U M R A T IN G S CEO Pd (mW) 'c m • Im A I (V ) min max BC236 BC285 BC312 BC393 BC394 N N N P N TO-106 T O -18 TO-39 T O -18 TO-18 300 360 800 400 400 50 100 150 100 100 120 120 100 180 180 25 30 50 50 30 200 BC450 BC530

2N3501

Abstract: 2N3439 2N3440 2N3500 2N3742 2N4926 BD115 BF258 BF259 BF336
Contextual Info: CONTINENTAL DEVICE INDIA b3E D • 23033*14 OQQOOflb W ■ CDIL TO-39 METAL-CAN PACKAGE TRANSISTORS NPN Type No. VCBO VCEO (V) (V) Min Min VEBO (V) Min •cBO (MA) Max VCB (V) hFE ® lc •& VCE (mA) (V) Min Max 10.0 0.75 10.000 10.0 1.00 40 2N3742 300

CDIL BC141-16

Abstract: BFX40 CDIL 2N2219a 2N3019 CDIL bfx64 h071 2N1613 2N1644 2N1837 2N1840
Contextual Info: -39 : H DIM A B C D E F G H J K PIN CONFIGURATION 1. EMITTER 2. BASE 3. COLLECTOR L MEN 8,50 7,74 6,09 0,40 - 2,41 4,82 0,71 0,73 12,7 42 DEG . ' MAX 9,39 8,50 6,60 0,53 0,88 2,66 5,33 0,86 1,02 48 DEG ALL DIMENSIONS ARE IN M.M. TO-39 Metal-Can Package Transistors NPN